CN202008925U - High-temperature ceramic dielectric feed through capacitor - Google Patents

High-temperature ceramic dielectric feed through capacitor Download PDF

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Publication number
CN202008925U
CN202008925U CN2010206221221U CN201020622122U CN202008925U CN 202008925 U CN202008925 U CN 202008925U CN 2010206221221 U CN2010206221221 U CN 2010206221221U CN 201020622122 U CN201020622122 U CN 201020622122U CN 202008925 U CN202008925 U CN 202008925U
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CN
China
Prior art keywords
capacitor
feed
chip
layer
electrode
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Expired - Lifetime
Application number
CN2010206221221U
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Chinese (zh)
Inventor
李少奎
赵碧全
王新
黄俭帮
陈亚东
吴晓东
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Chengdu Hongke Electronic Technology Co., Ltd.
Original Assignee
CHENGDU HONGMING UESTC NEW MATERIALS Co Ltd
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Priority to CN2010206221221U priority Critical patent/CN202008925U/en
Application granted granted Critical
Publication of CN202008925U publication Critical patent/CN202008925U/en
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Abstract

The utility model discloses a high-temperature ceramic dielectric feed through capacitor and relates to the technical field of ceramic capacitor manufacturing of electronic elements. The high-temperature ceramic dielectric feed through capacitor comprises a plurality layers of feed through capacitor chips, a signal transmission lead wire and a metal outer shell, wherein the feed-through capacitor chips are packaged in a resin packaging layer; the signal transmission lead wire is welded with inner end electrodes of the feed through capacitor chips; the metal outer shell is welded with outer end electrodes of the feed through capacitor chips; an electrode type inner circle reinforcing ring connected with the inner end electrodes of the feed through capacitor chips is arranged on the outer electrode layer surface of the capacitor chip in each layer; an electrode type outer circle reinforcing ring connected with the outer end electrodes of the feed through capacitor chips is arranged on the inner electrode layer surface of the capacitor chip in each layer; and a heatproof packaging layer is arranged between the capacitor chips and the resin packaging layer. In addition, the work temperature can reach 200 DEG C, therefore, the high-temperature ceramic dielectric feed through capacitor is particularly suitable for being used in various electronic equipment operating in the high-temperature environment.

Description

Pate dure Jie feed-through capacitor
Technical field
The utility model relates to the ceramic capacitor manufacturing technology field in the electronic component.
Background technology
Porcelain Jie feed-through capacitor is the critical piece of filter circuit.Existing porcelain Jie feed-through capacitor is by multilayer feed-through capacitor chip, with the signal transmit leg of the interior termination electrode welding of chip, constitute with the metal shell and the resin-encapsulated layer of the external electrode welding of chip.The shortcoming of this porcelain Jie feed-through capacitor is because the contact area of the external electrode of its chip and interior electrode and external electrode, interior termination electrode is less, its electrode end surface bond strength is less, under the ambient temperature condition with higher, because the distortion of encapsulated layer pulls the termination electrode of chip easily or with the chip drawing crack, causes the product short circuit to lose efficacy.Along with the filter circuit operating ambient temperature require more and more higher, have in addition reached 200 ℃, make that existing its maximum operating temperature is the high-temperature work environment requirement that porcelain Jie feed-through capacitor of 125 ℃ is difficult to satisfy 150 ℃~200 ℃ of filter circuits.
The utility model content
The purpose of this utility model is intended to solve the existing not high problem of porcelain Jie feed-through capacitor heatproof degree, and it is pate dure Jie feed-through capacitor of-55 ℃~+ 200 ℃ that a kind of working temperature is provided.
The formation that realizes pate dure Jie feed-through capacitor of the utility model purpose comprises the multilayer feed-through capacitor chip that is encapsulated in the resin-encapsulated layer, with the signal transmit leg of the interior termination electrode welding of feed-through capacitor chip and with the metal shell of the external electrode welding of feed-through capacitor chip, the external electrode aspect of described each layer chip is provided with an electric pole type inner ring reinforcing ring that joins with the interior termination electrode of feed-through capacitor chip, the inner electrode layer face of described each layer chip is provided with an electric pole type outer ring reinforcing ring that joins with the external electrode of feed-through capacitor chip, is provided with a heat-resisting encapsulated layer between described chip and resin-encapsulated layer.
This pate dure Jie feed-through capacitor is connected with the inside and outside termination electrode of chip by setting up " electric pole type reinforcing ring ", increased the contact area of chip body and inside and outside termination electrode, thereby increased the bonding strength of chip body and inside and outside termination electrode, improved the ability of the anti-deformation of chip; The heat-resisting encapsulated layer of setting up can adopt the very little high temperature resistant thermosetting modified resin of thermal coefficient of expansion to constitute, the anti-deformation behavior of utilizing this modified resin at high temperature to have can avoid product deformation to occur and the situation of drawing crack punching chip in temperature shock test and hot environment.
This pate dure Jie feed-through capacitor is set about from structural strength two aspects that are heated deformation quantity and strengthen product self that reduce product, has solved yielding and problem that the drawing crack chip causes capacitor to damage under the high temperature that existing porcelain Jie feed-through capacitor exists effectively.Its maximum operating temperature can reach 200 ℃, has satisfied the high-temperature work environment requirement of 150 ℃~200 ℃ of present filter circuits.Have that electrical properties in high temperatures is superior, reliability is high, symmetrical configuration, technical maturity, characteristics such as easy to make.Being specially adapted to various being operated in instrument in the hot environment, instrument, the electronic equipment uses.
Below in conjunction with drawings and Examples the utility model is described in further details.
Description of drawings
Fig. 1 is a structural representation of the present utility model
Fig. 2 is the structural representation of chip of the present utility model
Fig. 3 is the structural representation of existing porcelain Jie feed-through capacitor
Fig. 4 is the structural representation of the chip of existing porcelain Jie feed-through capacitor
Embodiment
Referring to Fig. 1~2, this pate dure Jie feed-through capacitor is an example with the capacitor of five layers of electrode chip, its formation comprises the multilayer feed-through capacitor chip 3 that is encapsulated in the resin-encapsulated layer 1, with the signal transmit leg 6 of interior termination electrode 7 welding of feed-through capacitor chip 3 and with the metal shell 5 of external electrode 8 welding of feed-through capacitor chip 3, external electrode 9 aspects that it is characterized in that described each layer chip are provided with an electric pole type inner ring reinforcing ring 11 that joins with the interior termination electrode 7 of feed-through capacitor chip, interior electrode 10 aspects of described each layer chip are provided with an electric pole type outer ring reinforcing ring 12 that joins with the external electrode 8 of feed-through capacitor chip, are provided with a heat-resisting encapsulated layer 2 between described chip 3 and resin-encapsulated layer 1.This heat-resisting encapsulated layer 2 can adopt the very little high temperature resistant thermosetting modified resin of thermal coefficient of expansion, adopts conventional packaging technology to constitute.Also can adopt other material to constitute with similar functions.Inner ring and outer ring reinforcing ring adopt electric pole type and are arranged on the electrode aspect of chip, mainly are to consider that its making is more convenient, and promptly reinforcing ring can preparation in the inside and outside electrode of preparation chip.Obviously, reinforcing ring is located on other aspect of chip and also is fine, as long as it does not touch mutually with the inside and outside electrode of chip.Reinforcing ring do not make electric pole type also can, as long as it can just can with the termination electrode of chip is affixed.
Be convenient comparison, Fig. 3 and Fig. 4 have provided the structural representation of existing porcelain Jie feed-through capacitor and chip.In the present embodiment, more existing porcelain Jie of this pate dure Jie feed-through capacitor feed-through capacitor is many, and three inner ring reinforcing rings 11 join with interior termination electrode 7, and many two outer ring reinforcing rings 12 join with external electrode 8.

Claims (1)

1. pate dure Jie feed-through capacitor, comprise the multilayer feed-through capacitor chip that is encapsulated in the resin-encapsulated layer, with the signal transmit leg of the interior termination electrode welding of feed-through capacitor chip and with the metal shell of the external electrode welding of feed-through capacitor chip, the external electrode aspect that it is characterized in that described each layer chip is provided with an electric pole type inner ring reinforcing ring that joins with the interior termination electrode of feed-through capacitor chip, the inner electrode layer face of described each layer chip is provided with an electric pole type outer ring reinforcing ring that joins with the external electrode of feed-through capacitor chip, is provided with a heat-resisting encapsulated layer between described chip and resin-encapsulated layer.
CN2010206221221U 2010-11-24 2010-11-24 High-temperature ceramic dielectric feed through capacitor Expired - Lifetime CN202008925U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010206221221U CN202008925U (en) 2010-11-24 2010-11-24 High-temperature ceramic dielectric feed through capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010206221221U CN202008925U (en) 2010-11-24 2010-11-24 High-temperature ceramic dielectric feed through capacitor

Publications (1)

Publication Number Publication Date
CN202008925U true CN202008925U (en) 2011-10-12

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Application Number Title Priority Date Filing Date
CN2010206221221U Expired - Lifetime CN202008925U (en) 2010-11-24 2010-11-24 High-temperature ceramic dielectric feed through capacitor

Country Status (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107769540A (en) * 2017-11-27 2018-03-06 成都宇鑫洪科技有限公司 Passive electrodeless strand core cable porcelain Jie's punching power-supply filter
WO2022170674A1 (en) * 2021-02-09 2022-08-18 福建欧中电子有限公司 Highly reliable multilayer ceramic feedthrough capacitor and manufacturing method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107769540A (en) * 2017-11-27 2018-03-06 成都宇鑫洪科技有限公司 Passive electrodeless strand core cable porcelain Jie's punching power-supply filter
WO2022170674A1 (en) * 2021-02-09 2022-08-18 福建欧中电子有限公司 Highly reliable multilayer ceramic feedthrough capacitor and manufacturing method therefor

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C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 610100, No. 20, Xingguang Road, national economic and Technological Development Zone, Longquanyi District, Sichuan, Chengdu

Patentee after: Chengdu Hongke Electronic Technology Co., Ltd.

Address before: 610100, No. 20, Xingguang Road, national economic and Technological Development Zone, Longquanyi District, Sichuan, Chengdu

Patentee before: Chengdu Hongming UESTC New Materials Co., Ltd.

CP01 Change in the name or title of a patent holder
CX01 Expiry of patent term

Granted publication date: 20111012

CX01 Expiry of patent term