CN201549493U - Micro diode molybdenum electrode lead structure - Google Patents

Micro diode molybdenum electrode lead structure Download PDF

Info

Publication number
CN201549493U
CN201549493U CN 200920125892 CN200920125892U CN201549493U CN 201549493 U CN201549493 U CN 201549493U CN 200920125892 CN200920125892 CN 200920125892 CN 200920125892 U CN200920125892 U CN 200920125892U CN 201549493 U CN201549493 U CN 201549493U
Authority
CN
China
Prior art keywords
molybdenum electrode
lead wire
welding
lead
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 200920125892
Other languages
Chinese (zh)
Inventor
欧绍德
周斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Zhenhua Group Yongguang Electronics Coltd
Original Assignee
China Zhenhua Group Yongguang Electronics Coltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Zhenhua Group Yongguang Electronics Coltd filed Critical China Zhenhua Group Yongguang Electronics Coltd
Priority to CN 200920125892 priority Critical patent/CN201549493U/en
Application granted granted Critical
Publication of CN201549493U publication Critical patent/CN201549493U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

The utility model discloses a micro diode molybdenum electrode lead structure which comprises a lead wire (1), a copper welding plate (2) and a molybdenum electrode (3), wherein the copper welding plate (2) is connected and fixed with the lead wire (1) and the molybdenum electrode (3) together through soldering, and the lead wire (1) is formed by nickel material or iron nickel alloy materials. The micro diode molybdenum electrode lead wire structure utilizes the characteristics of intermiscibility of copper and nickel, can connect and fix the molybdenum electrode and the lead wire together through primary braze welding (namely the braze welding of the molybdenum electrode, the copper welding plate and the lead wire), reduces occupied space of one layer of welding materials, lowers production cost, simplifies manufacturing technology, and improves yield ratio and reliability of products. The micro diode molybdenum electrode lead wire structure has the advantages of small volumes of welding points, simple manufacture technology, low cost and high product reliability.

Description

A kind of microdiode molybdenum electrode pin configuration
Technical field
The utility model and a kind of microdiode molybdenum electrode pin configuration belong to the microdiode manufacture technology field.
Background technology
The electrode leads to client of microdiode needs electric conductivity and the processing of plasticity excellent material on the one hand, guarantee in electronic circuit, to possess lower electrical loss and reliable mechanical connection and favorable manufacturability, the consistency that must keep hot expansibility on the other hand with silicon guarantees that diode satisfies harsh reliability environmental test requirement.At present, microdiode of the prior art generally adopts Mo as electrode, and molybdenum electrode is connected with lead-in wire by the mode of twice soldering, promptly adopt soldering for the first time with molybdenum electrode with the brazing sheet soldering be in the same place, soldering for the second time with silver-bearing copper weld tabs, molybdenum electrode with lead-in wire soldering be in the same place, the welding manner and the existing defective of structure of kind electrode lead-in wire are: 1, the solder joint volume is big, causes microdiode overall dimension to be difficult to satisfy code requirement; 2,, thereby improved production cost owing to employing silver-bearing copper weld tabs; 3, complex manufacturing technology, thus cause reliability of products to reduce and the rate of finished products reduction.The manufacture method and the structure of therefore existing microdiode molybdenum electrode lead-in wire still are not ideal enough.
The utility model content
The purpose of this utility model is: provide the microdiode molybdenum electrode pin configuration that a kind of solder joint volume is little, manufacture craft simple, cost is lower, product reliability is higher, to overcome the deficiencies in the prior art.
The utility model is to constitute like this: microdiode molybdenum electrode pin configuration of the present utility model is, this molybdenum electrode pin configuration is made up of lead-in wire, brazing sheet and molybdenum electrode, and the brazing sheet will go between by soldering and molybdenum electrode is connected and fixed.
Above-mentioned lead-in wire is the lead-in wire that nickel material or iron-nickel alloy material constitute.
Owing to adopted technique scheme, the characteristic that the utility model utilizes copper nickel to dissolve each other, molybdenum electrode and lead-in wire can be connected and fixed by a soldering (being molybdenum electrode, brazing sheet, lead-in wire soldering), this has not only reduced the shared space of one deck scolder, reduced production cost, but also simplified manufacture craft, improved the rate of finished products and the reliability of product; In addition when reaching the design temperature process from temperature rise, two kinds of materials of nickel down-lead of the present utility model (or iron-nickel alloy lead-in wire) and brazing sheet contact site diffuse to form eutectic mutually until balance, simultaneously also to the molybdenum matrix diffusion of molybdenum electrode and form firm weld layer.Therefore, the utility model compared with prior art the utlity model has the advantage that the solder joint volume is little, manufacture craft is simple, cost is low, product reliability is high.Through evidence, adopt the microdiode overall dimension of the utility model production can satisfy code requirement, its unfailing performance satisfies the harsh reliability environmental test requirement of diode.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described.
Embodiment of the present utility model: microdiode molybdenum electrode pin configuration of the present utility model as shown in Figure 1, this molybdenum electrode pin configuration is made up of lead-in wire 1, brazing sheet 2 and molybdenum electrode 3, lead-in wire 1 adopts existing nickel material or iron-nickel alloy material as lead-in wire, brazing sheet 2 by soldering will go between 1 and molybdenum electrode 3 be connected and fixed.During making, the size of its lead-in wire 1, brazing sheet 2 and molybdenum electrode 3 is determined by existing code requirement, adopt existing nickel or iron-nickel alloy material lead-in wire 1, will be used for the molybdenum electrode 3 that microdiode contacts with silicon and molybdenum electrode 3 and lead-in wire 1 can be linked together by the disposable soldering of existing brazing mode by brazing sheet 2 as microdiode.

Claims (2)

1. microdiode molybdenum electrode pin configuration is characterized in that: this molybdenum electrode pin configuration is made up of lead-in wire (1), brazing sheet (2) and molybdenum electrode (3), and brazing sheet (2) will go between (1) by soldering and molybdenum electrode (3) is connected and fixed.
2. microdiode molybdenum electrode pin configuration according to claim 1 is characterized in that: lead-in wire (1) is the lead-in wire of nickel material or iron-nickel alloy material formation.
CN 200920125892 2009-12-04 2009-12-04 Micro diode molybdenum electrode lead structure Expired - Lifetime CN201549493U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200920125892 CN201549493U (en) 2009-12-04 2009-12-04 Micro diode molybdenum electrode lead structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200920125892 CN201549493U (en) 2009-12-04 2009-12-04 Micro diode molybdenum electrode lead structure

Publications (1)

Publication Number Publication Date
CN201549493U true CN201549493U (en) 2010-08-11

Family

ID=42604672

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200920125892 Expired - Lifetime CN201549493U (en) 2009-12-04 2009-12-04 Micro diode molybdenum electrode lead structure

Country Status (1)

Country Link
CN (1) CN201549493U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102699466A (en) * 2012-06-19 2012-10-03 中国振华集团永光电子有限公司 Brazing method of semiconductor electrode assembly
CN104659111A (en) * 2015-02-11 2015-05-27 中国振华集团永光电子有限公司(国营第八七三厂) Micro commutation diode supporting glass passivation packaging

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102699466A (en) * 2012-06-19 2012-10-03 中国振华集团永光电子有限公司 Brazing method of semiconductor electrode assembly
CN102699466B (en) * 2012-06-19 2015-08-19 中国振华集团永光电子有限公司 The method for welding of semi-conducting electrode assembly
CN104659111A (en) * 2015-02-11 2015-05-27 中国振华集团永光电子有限公司(国营第八七三厂) Micro commutation diode supporting glass passivation packaging

Similar Documents

Publication Publication Date Title
CN106449538A (en) Surface-mounting type rectifier structure
CN101217075A (en) A compound contact structure and manufacturing technology
CN105537793A (en) Soldering lug for welding power module
CN103219246B (en) A kind of manufacture method of plating the silver-plated two coating bonding brass wires of palladium
CN201549493U (en) Micro diode molybdenum electrode lead structure
CN204497239U (en) Metallic packaging big current, high voltage, fast recovery diode
CN204255284U (en) One carries terminal strainometer
CN201838584U (en) Encapsulated triode
CN209588864U (en) A kind of electric detonator capacitance bracket of capacitor
CN101888038B (en) Terminal assembly of electric connector
CN202816923U (en) Lead-wire frame used for integrated circuit ceramic package housing
CN203398142U (en) Micro-optically-focused photovoltaic solder strip
CN102087984A (en) Molybdenum electrode lead structure of micro-diode and welding method
CN109788639A (en) FPC circuit board
CN103219311B (en) A kind ofly plate the silver-plated two coating bonding brass wires of palladium
CN112086372A (en) Packaging material structure layer for front connection of high junction temperature power module chip and manufacturing method thereof
CN202957296U (en) Light emitting diode having inverted structure
CN209766822U (en) Connection structure of integrated circuit board and integrated circuit board
CN201741683U (en) Power semiconductor device
CN202394950U (en) Combined lead frame
JP3229009U (en) LED board structure
CN202906869U (en) Ceramic leadless relay tube shell
CN219832650U (en) Chip packaging structure
CN202373577U (en) Welding blade terminal of high-power automotive rectifier bridge
CN209515463U (en) A kind of silver alloy contact

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100811