CN102699466B - The method for welding of semi-conducting electrode assembly - Google Patents
The method for welding of semi-conducting electrode assembly Download PDFInfo
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- CN102699466B CN102699466B CN201210201713.5A CN201210201713A CN102699466B CN 102699466 B CN102699466 B CN 102699466B CN 201210201713 A CN201210201713 A CN 201210201713A CN 102699466 B CN102699466 B CN 102699466B
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Abstract
The invention discloses a kind of method for welding of semi-conducting electrode assembly, it comprises the graphite sintering mould providing and comprise upper and lower mould, is reserved with fairlead in this mold; Die-filling: electrode assemblie to be loaded in bed die, build mold; Put into the solder of spheroid form by fairlead, then put into semiconductor leads by fairlead; Soldering is carried out to electrode assemblie and semiconductor leads.The present invention adopts spheroid solder soldering electrodes assembly, and the location not only in graphite sintering mould endoporus is comparatively accurate, can not produce displacement, and can not by the impact of mould and die accuracy, and its electrode assemblie yield rate of producing is high, and product appearance is better; In addition, it can also reduce wearing and tearing, the volatilization of graphite sintering mould, extends the graphite sintering mold use life-span to a certain extent.
Description
Technical field
The present invention relates to the method for welding of semiconductor device, particularly relate to the method for welding of a kind of sheet or columnar semiconductor parts and lead-in wire.
Background technology
Soldering is that mother metal and solder are heated to uniform temperature jointly, and in the infusible situation of mother metal, solder fusing also soaks the faying face of mother metal, relies on liquid solder to form intermetallic with the mutual diffusingsurface of solid-state mother metal and is connected.This technology is commonly used, and is widely used in the correlated parts connection each other among the electron trade fields such as semiconductor devices.At present in the brazing process of semiconductor applications electrode assemblie, the soldering of sheet or cylindrical parts and lead-in wire, adopts sheet solder to weld usually.Wherein, the area in sheet or face, cylindrical parts soldering point place is comparatively large, and pin cross section is long-pending less, and the former area is generally more than 4 times of the latter's area.There is following problem in this kind of welding method:
(1), according to pin cross section suitable sheet solder is amassed, quite high to sintering mold requirement on machining accuracy, just can guarantee that sheet solder is accurately located.In semiconductor soldering field, the thickness of solder is general very thin, and within the scope of 0.05mm-0.3mm, and the thickness a relation of sintering mold degree of depth b and sheet or cylindrical parts is very close.Theoretically, b value preferably equals a value, but mould always exists error in reality processing, and so b value actual size is a value or is slightly less than a value, could meet sheet solder positioning requirements reluctantly.Meanwhile, because the flatness of upper and lower mould also exists mismachining tolerance, this brings adverse effect all can to sheet solder location.In a word, between upper and lower mould, or when sheet or the gap between cylindrical parts and another mould exceed thickness (0.05mm-0.3mm) of solder, sheet solder is just easy at sheet or cylindrical parts superior displacement, thus depart from lead-in wire soldering places, cause lead-in wire cannot soldering.Because sintering mold needs fine finishining, this is just very high concerning requiring graphite jig processing, namely allow to processing, but die life also can be very short, because in production process, the reasons such as graphite jig can wear and tear, volatilization cause sintering mold to be scrapped or mould needs again to process.
(2), according to sheet or the suitable sheet solder of cylindrical parts area, although just can guarantee that sheet solder is accurately located to sintering mold requirement on machining accuracy is lower, this can cause the significant wastage of solder.Meanwhile, weld stacked solder is excessive, can affect product appearance quality.
Summary of the invention
The object of the invention is to, propose a kind of method for welding of semi-conducting electrode assembly, it is not by the impact of mould and die accuracy, and brazing quality reliability is higher, and not only yield rate is high for the electrode assemblie of production, and presentation quality is better.
For achieving the above object, the invention provides a kind of method for welding of semi-conducting electrode assembly, comprising:
The graphite sintering mould comprising upper and lower mould is provided, in this mold, is reserved with fairlead;
Die-filling: electrode assemblie to be loaded in bed die, build mold;
Put into the solder of spheroid form by fairlead, then put into semiconductor leads by fairlead;
Soldering is carried out to electrode assemblie and semiconductor leads.
Wherein, before described die-filling step, operation electrode assemblie being carried out to oil removing and removing oxide layer is also comprised.
Electrode assemblie described in the present invention is sheet or column parts, this sheet or carry out soldering by the solder of spheroid form between column parts and semiconductor leads.
The sectional area of described semiconductor leads is less than the area in sheet or face, column parts soldering point place.
In the present invention, described sheet or column parts can be cylindrical or square column type.
Concrete, the degree of depth of described graphite sintering mould is 0.2mm-3mm, and the thickness of sheet or column parts is 0.2mm-3mm.
In the present invention, the solder radius of spheroid form can be 0.3mm-3mm, and this solder can adopt money base solder AgCu28, copper-based solder TU1, auri solder AuCu20 or Ti-based solder TiNi28 material.
In the present invention, operation electrode assemblie and semiconductor leads being carried out to soldering can be carried out freezing in stove, and this furnace temperature freezed in stove is 840 DEG C ± 30 DEG C, and hydrogen flowing quantity is 15 liters/min ± 5 liters/min, nitrogen flow is 12 liters/min ± 5 liters/min, and the time of freezing is 3min ± 1min.
The method for welding of semi-conducting electrode assembly of the present invention, it adopts spheroid solder soldering electrodes assembly, location not only in graphite sintering mould endoporus is comparatively accurate, displacement can not be produced, and can not by the impact of mould and die accuracy, the effective welding requirements of sheet or cylindrical parts and lead-in wire can be reached, its electrode assemblie yield rate of producing is high, can more than 98% be reached, its brazing quality reliability is high, in pull test, even if lead-in wire is broken, pad all can not come off, it also greatly reduces the consumption of solder material, in solder material consumption, comparatively prior art have dropped 25%, in addition, it can also reduce wearing and tearing, the volatilization of graphite sintering mould, extends the graphite sintering mold use life-span to a certain extent.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of a kind of specific embodiment of method for welding of semi-conducting electrode assembly of the present invention;
Fig. 2 is the installation site schematic diagram in the present invention between graphite sintering mould and electrode assemblie;
Fig. 3 is the degree of contrast schematic diagram that a kind of sheet solder of prior art changes into the solder of spheroid form of the present invention;
Fig. 4 is the degree of contrast schematic diagram that the sheet solder of the second prior art changes into the solder of spheroid form of the present invention;
Fig. 5 is the degree of contrast schematic diagram that the sheet solder of the third prior art changes into the solder of spheroid form of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, the invention provides a kind of method for welding of semi-conducting electrode assembly, it comprises the steps:
Step 1, provides the graphite sintering mould comprising upper and lower mould 10,20, is reserved with shown in fairlead 12(Fig. 2 in this mold 10).As a kind of specific embodiment of the present invention, the degree of depth b of described graphite sintering mould can be 0.2mm-3mm.As a preferred embodiment of the present invention, the degree of depth b of this graphite sintering mould is specially 0.5mm.
Step 2, die-filling: electrode assemblie to be loaded in bed die 20, build mold 10.In the present invention, before described dress film step, operation electrode assemblie being carried out to oil removing and removing oxide layer is also comprised.Electrode assemblie described in the present invention is sheet or column parts 52,54, and this sheet or column parts 52,54 can be columniform, and it also can be square column type.As the selective embodiment of one of the present invention, the thickness a of this sheet or column parts 52,54 can be 0.2mm-3mm.As a preferred embodiment of the present invention, the thickness a of this sheet or column parts 52,54 is specially 0.5mm.
Step 3, is put into the solder 30 of spheroid form, then puts into semiconductor leads 40 by fairlead 12 by fairlead 12.In the present invention, the sectional area of semiconductor leads 40 is less than the area in sheet or face, column parts 52,54 soldering point place, and the area in face, column parts 52,54 soldering point place is more than 4 times of the sectional area of semiconductor leads 40.Especially, the sheet in the present invention or the solder 30 by spheroid form between column parts 52,54 and semiconductor leads 40 carry out soldering.The solder 30 of this spheroid form is positioned by the fairlead 12 of graphite sintering mould, its accurate positioning, displacement can not be produced, the solder 30 of spheroid form is all the time below the end face of semiconductor leads 40, by the impact of graphite sintering mould and die accuracy, can not effectively can reach the welding requirements of sheet or column parts 52,54.Because it is lower to the processing request of graphite sintering mould, and the wearing and tearing that in process, graphite sintering mould caused of the solder 30 of spheroid form and volatilization less, therefore can extend the mold use life-span to a certain extent, also can reduce production cost.
Step 4, carries out soldering to electrode assemblie and semiconductor leads 40.The present invention can carry out freezing in stove the operation that electrode assemblie and semiconductor leads 40 carry out soldering.Concrete, in brazing process, this furnace temperature freezed in stove can be 840 DEG C ± 30 DEG C, and hydrogen flowing quantity is 15 liters/min ± 5 liters/min, and nitrogen flow is 12 liters/min ± 5 liters/min, and the time of freezing is 3min ± 1min.Above-mentioned for furnace temperature, hydrogen flowing quantity, nitrogen flow, the control of time of freezing, not only can to guarantee between electrode assemblie with semiconductor leads 40 effective welds, and it freezes, quality is better.
The electrode assemblie yield rate utilizing the method for welding of semi-conducting electrode assembly in the present invention to produce is higher, can reach more than 98%.Because the location of solder 30 in the fairlead 12 of graphite sintering mould of solder sphere shape is comparatively accurate, displacement can not be produced, therefore its weld can not produce excessive stacked solder, product appearance quality is better, and brazing quality reliability is also higher, in pull test, even if semiconductor leads 40 is broken, pad also can not come off.Preferably, in the present invention, the radius of the solder 30 of spheroid form can be 0.3mm-3mm, and its solder can adopt the materials such as money base solder AgCu28, copper-based solder TU1, auri solder AuCu20 or Ti-based solder TiNi28.In brazing process of the present invention, be 840 DEG C ± 30 DEG C in the furnace temperature in stove that freezes, hydrogen flowing quantity is 15 liters/min ± 5 liters/min, and nitrogen flow is 12 liters/min ± 5 liters/min, when the time of freezing is 3min ± 1min, and solder preferably adopts money base solder AgCu28.Certainly, in other specific embodiment of the present invention, this solder can also adopt any one solder of the prior art all can implement.
In addition, by sheet solder of the prior art being converted into the solder of spheroid form in the present invention, its not only effective location height increase considerably, and greatly saved solder.Such as, as shown in Figure 3, for sheet solder 60 a kind of in prior art changes into the degree of contrast figure of the solder 30 of spheroid form, the sheet solder 60 of original Φ 0.5 × δ 0.2 is converted into spheroid form by it, solder 30 diameter of its spheroid form is the radius of a ball sr0.21 in 0.42(and figure), its effective location height increases 0.42 by original 0.2, improves 110%.For another example, in the diagram, the sheet solder 60 ' of original Φ 1 × δ 0.15 is converted into spheroid form, the solder 30 ' diameter of its spheroid form is the radius of a ball sr0.305 in 0.61(and figure), its effective location height increases 0.61 by original 0.15, improves 306%.And for example, in Figure 5, the sheet solder 60 by original Φ 2 × δ 0.1 " be converted into spheroid form, the solder 30 of its spheroid form " diameter is radius of a ball SR0.42 in 0.84(and figure), its effective location height increases 0.84 by original 0.1, improves 740%.From above-mentioned several groups of correction datas, sheet solder is converted to the solder of spheroid form, its effective location height can be increased considerably, therefore between upper and lower mould 10,20, or sheet or the gap between column parts 52,54 and another mould also just can significantly be relaxed, just can significantly decline to the required precision of graphite sintering mould, wherein, the degree of depth b of graphite sintering mould and the planarity requirements of upper and lower mould 10,20 can relax thereupon.
The present invention is in the process of freezing; the foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all; any amendment of doing, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a method for welding for semi-conducting electrode assembly, is characterized in that, comprising:
There is provided the graphite sintering mould comprising upper and lower mould, be reserved with fairlead in this mold, the degree of depth of described graphite sintering mould is 0.2mm-3mm;
Die-filling: electrode assemblie to be loaded in bed die, build mold, before described die-filling step, also comprise operation electrode assemblie being carried out to oil removing and removing oxide layer;
The solder of spheroid form is put into by fairlead, semiconductor leads is put into again by fairlead, described electrode assemblie is sheet or column parts, this sheet or carry out soldering by the solder of spheroid form between column parts and semiconductor leads, the sectional area of described semiconductor leads is less than the area in sheet or face, column parts soldering point place, the thickness of this sheet or column parts is 0.2mm-3mm, and the solder radius of described spheroid form is 0.3mm-3mm;
Soldering is carried out to electrode assemblie and semiconductor leads.
2. the method for welding of semi-conducting electrode assembly as claimed in claim 1, it is characterized in that, described sheet or column parts are cylindrical or square column type.
3. the method for welding of semi-conducting electrode assembly as claimed in claim 1, is characterized in that, described solder adopts money base solder AgCu28, copper-based solder TU1, auri solder AuCu20 or Ti-based solder TiNi28 material.
4. the method for welding of semi-conducting electrode assembly as claimed in claim 1, it is characterized in that, describedly operating in the stove that freezes of soldering is carried out to electrode assemblie and semiconductor leads carry out, this furnace temperature freezed in stove is 840 DEG C ± 30 DEG C, hydrogen flowing quantity is 15 liters/min ± 5 liters/min, nitrogen flow is 12 liters/min ± 5 liters/min, and the time of freezing is 3min ± 1min.
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| CN201210201713.5A CN102699466B (en) | 2012-06-19 | 2012-06-19 | The method for welding of semi-conducting electrode assembly |
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| CN201210201713.5A CN102699466B (en) | 2012-06-19 | 2012-06-19 | The method for welding of semi-conducting electrode assembly |
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| CN102699466B true CN102699466B (en) | 2015-08-19 |
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| CN105355583B (en) * | 2015-12-14 | 2018-04-13 | 福建闽航电子有限公司 | A kind of graphite boat for CPGA Product Assemblies |
| CN105330317B (en) * | 2015-12-14 | 2017-12-19 | 福建闽航电子有限公司 | A kind of ceramic package method for welding |
| CN107598316B (en) * | 2017-10-19 | 2019-12-27 | 福建闽航电子有限公司 | Nickel wire brazing method for heating sheet |
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| CN1554507A (en) * | 2003-12-23 | 2004-12-15 | 番禺得意精密电子工业有限公司 | Overlapping method for joint foot and welding flux and electronic element using such method |
| CN1759480A (en) * | 2003-03-10 | 2006-04-12 | 费查尔德半导体有限公司 | Dual metal stud bumping for flip chip applications |
| CN101582435A (en) * | 2008-05-16 | 2009-11-18 | 鸿富锦精密工业（深圳）有限公司 | Packaging structure for image sensing wafer and camera module applying same |
| CN201549493U (en) * | 2009-12-04 | 2010-08-11 | 中国振华集团永光电子有限公司 | Micro diode molybdenum electrode lead structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8456021B2 (en) * | 2010-11-24 | 2013-06-04 | Texas Instruments Incorporated | Integrated circuit device having die bonded to the polymer side of a polymer substrate |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1759480A (en) * | 2003-03-10 | 2006-04-12 | 费查尔德半导体有限公司 | Dual metal stud bumping for flip chip applications |
| CN1554507A (en) * | 2003-12-23 | 2004-12-15 | 番禺得意精密电子工业有限公司 | Overlapping method for joint foot and welding flux and electronic element using such method |
| CN101582435A (en) * | 2008-05-16 | 2009-11-18 | 鸿富锦精密工业（深圳）有限公司 | Packaging structure for image sensing wafer and camera module applying same |
| CN201549493U (en) * | 2009-12-04 | 2010-08-11 | 中国振华集团永光电子有限公司 | Micro diode molybdenum electrode lead structure |
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