CN102699466A - Brazing method of semiconductor electrode assembly - Google Patents
Brazing method of semiconductor electrode assembly Download PDFInfo
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- CN102699466A CN102699466A CN2012102017135A CN201210201713A CN102699466A CN 102699466 A CN102699466 A CN 102699466A CN 2012102017135 A CN2012102017135 A CN 2012102017135A CN 201210201713 A CN201210201713 A CN 201210201713A CN 102699466 A CN102699466 A CN 102699466A
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- electrode assembly
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Abstract
The invention discloses a brazing method of a semiconductor electrode assembly, which comprises the following steps of: providing a graphite sintering die composed of an upper die and a lower die and reserving a leading hole in the upper die; die mounting: mounting the electrode assembly in the lower die and covering the upper die; putting a sphere-shaped solder through the leading hole and then putting a semiconductor lead through the leading hole; and brazing the electrode assembly and the semiconductor lead. The brazing method has the beneficial effect that as the electrode assembly is brazed by adopting the sphere solder, the electrode assembly is more accurately positioned in an inner hole of the graphite sintering die without displacing or being affected by die precision, and the produced electrode assembly has high yield and a better appearance; and in addition, the abrasion and the volatilization of the graphite sintering die can also be reduced, and the service life of the graphite sintering die is prolonged to a certain degree.
Description
Technical field
The present invention relates to the method for welding of semiconductor device, relate in particular to the method for welding of a kind of sheet or columnar semiconductor parts and lead-in wire.
Background technology
Soldering is that mother metal and scolder are heated to uniform temperature jointly, and under the infusible situation of mother metal, the faying face of solder fusing and wetting mother metal relies on the mutual diffusingsurface formation intermetallic of liquid solder and solid-state mother metal to be connected.This technology is generally used, and is widely used in the correlated parts connection each other among the electron trade field such as semiconductor devices.In the brazing process of semiconductor applications electrode assemblie, the soldering of sheet or column part and lead-in wire adopts the sheet scolder to weld usually at present.Wherein, the area of sheet or column part soldering point place face is bigger, and the lead-in wire sectional area is less, and the former area generally is more than 4 times of latter's area.There is following problem in this kind welding method:
(1), if adopt and the suitable sheet scolder of lead-in wire sectional area, quite high to the sintering mold requirement on machining accuracy, can guarantee that just the sheet scolder accurately locatees.In semiconductor soldering field, the thickness of scolder is generally very thin, and in 0.05mm-0.3mm scope, and the thickness a of sintering mold degree of depth b and sheet or column part relation is very close.Theoretically, the b value preferably equals a value, but always there is error in mould in reality processing, and b value actual size is a value or is slightly less than a value so, could satisfy sheet scolder positioning requirements reluctantly.Simultaneously, because also there is mismachining tolerance in the flatness of upper and lower mould, this all can give sheet scolder location deleterious impact.In a word; Between the upper and lower mould, perhaps the gap between sheet or column part and another mould surpasses the thickness of scolder (during 0.05mm-0.3mm), the sheet scolder is just easily at sheet or column part superior displacement; Thereby depart from lead-in wire soldering position, causing going between can't soldering.Because sintering mold needs fine finishining; This requires just very high concerning graphite jig processing, even can process, but die life also can be very short; Because in the production process, reasons such as graphite jig can wear and tear, volatilization cause sintering mold to be scrapped or mould needs processing again.
(2), if employing and sheet or the suitable sheet scolder of column part area, just can guarantee that the sheet scolder accurately locatees though the sintering mold requirement on machining accuracy hanged down, this can cause the significant wastage of scolder.Simultaneously, the weld stacked solder is excessive, can influence the product appearance quality.
Summary of the invention
The objective of the invention is to, propose a kind of method for welding of semi-conducting electrode assembly, it does not receive the influence of mould and die accuracy, and the brazing quality reliability is higher, and the electrode assemblie of production not only yield rate is high, and presentation quality is better.
For realizing above-mentioned purpose, the present invention provides a kind of method for welding of semi-conducting electrode assembly, comprising:
The graphite that comprises upper and lower mould sintering mold is provided, is reserved with fairlead in this mold;
Dress mould: electrode assemblie is packed in the bed die, build mold;
Put into the scolder of spheroid form through fairlead, put into semiconductor leads through fairlead again;
Electrode assemblie and semiconductor leads are carried out soldering.
Wherein, before said dress mould step, also comprise the operation of electrode assemblie being carried out oil removing and removing oxide layer.
Electrode assemblie described in the present invention is sheet or column parts, and the scolder through spheroid form between this sheet or column parts and the semiconductor leads carries out soldering.
The sectional area of said semiconductor leads is less than the area of sheet or column parts soldering point place face.
Among the present invention, said sheet or column parts can be cylindrical or square column type.
Concrete, the degree of depth of said graphite sintering mold is 0.2mm-3mm, the thickness of sheet or column parts is 0.2mm-3mm.
The scolder radius of spheroid form can be 0.3mm-3mm among the present invention, and this scolder can adopt money base scolder AgCu28, copper parent metal TU1, auri scolder AuCu20 or titanium parent metal TiNi28 material.
Among the present invention; Electrode assemblie and semiconductor leads being carried out the operation of soldering can carry out in the stove that freezes, and the furnace temperature in this stove that freezes is 840 ℃ ± 30 ℃, and hydrogen flowing quantity is 15 liters/minute ± 5 liters/minute; Nitrogen flow is 12 liters/minute ± 5 liters/minute, and the time of freezing is 3min ± 1min.
The method for welding of semi-conducting electrode assembly of the present invention, it adopts spheroid scolder soldering electrode assemblie, and not only the location in graphite sintering mold endoporus is comparatively accurate; Can not produce displacement, and can not receive the influence of mould and die accuracy, can reach sheet or column part and the effective welding requirements of lead-in wire; The electrode assemblie yield rate of its production is high, can reach more than 98%, and its brazing quality reliability is high; In pull test, even lead-in wire is broken, pad can not come off; It also greatly reduces the consumption of solder material, in solder material consumption, has descended 25% than prior art; In addition, wearing and tearing, volatilization that it can also reduce the graphite sintering mold prolong service life of graphite sintering mold to a certain extent.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work property, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of a kind of specific embodiment of method for welding of semi-conducting electrode assembly of the present invention;
Fig. 2 is the installation site sketch map between graphite sintering mold among the present invention and the electrode assemblie;
Fig. 3 changes into the degree of contrast sketch map of the scolder of spheroid form of the present invention for a kind of sheet scolder of prior art;
Fig. 4 is the degree of contrast sketch map that the sheet scolder of second kind of prior art changes into the scolder of spheroid form of the present invention;
Fig. 5 changes into the degree of contrast sketch map of the scolder of spheroid form of the present invention for the sheet scolder of the third prior art.
The specific embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
As shown in Figure 1, the present invention provides a kind of method for welding of semi-conducting electrode assembly, and it comprises the steps:
Step 1 provides the graphite sintering mold that comprises upper and lower mould 10,20, is reserved with fairlead 12 (shown in Figure 2) in this mold 10.As a kind of specific embodiment of the present invention, the degree of depth b of said graphite sintering mold can be 0.2mm-3mm.As a kind of preferred embodiment of the present invention, the degree of depth b of this graphite sintering mold is specially 0.5mm.
The electrode assemblie yield rate of utilizing the method for welding of semi-conducting electrode assembly among the present invention to produce is higher, can reach more than 98%.Because the location of scolder 30 in the fairlead 12 of graphite sintering mold of solder sphere shape is comparatively accurate; Can not produce displacement, so its weld can not produce excessive stacked solder, the product appearance quality is better; And the brazing quality reliability is also higher; In pull test, even semiconductor leads 40 is broken, pad can not come off yet.Preferably, the radius of the scolder 30 of spheroid form can be 0.3mm-3mm among the present invention, and its scolder can adopt materials such as money base scolder AgCu28, copper parent metal TU1, auri scolder AuCu20 or titanium parent metal TiNi28.In the brazing process of the present invention, the furnace temperature in the stove that freezes is 840 ℃ ± 30 ℃, and hydrogen flowing quantity is 15 liters/minute ± 5 liters/minute, and nitrogen flow is 12 liters/minute ± 5 liters/minute, and the time of freezing is under the situation of 3min ± 1min, and scolder preferably adopts money base scolder AgCu28.Certainly, in other specific embodiment of the present invention, this scolder can also adopt any one scolder of the prior art all can implement.
In addition, through sheet scolder of the prior art being converted into the scolder of spheroid form, its not only effective location highly increases considerably, and has greatly practiced thrift scolder among the present invention.For example; As shown in Figure 3; For a kind of sheet scolder 60 in the prior art changes into the degree of contrast figure of the scolder 30 of spheroid form, its sheet scolder 60 with original Φ 0.5 * δ 0.2 is converted into spheroid form, and scolder 30 diameters of its spheroid form are 0.42 (i.e. radius of a ball sr0.21 among the figure); Its effectively the location height be increased to 0.42 by original 0.2, promoted 110%.For another example; Shown in Fig. 4, the sheet scolder 60 ' of original Φ 1 * δ 0.15 is converted into spheroid form, the scolder 30 ' diameter of its spheroid form is 0.61 (i.e. radius of a ball sr0.305 among the figure); Its effectively the location height be increased to 0.61 by original 0.15, promoted 306%.And for example; Shown in Fig. 5, with the sheet scolder 60 of original Φ 2 * δ 0.1 " be converted into spheroid form, the scolder 30 of its spheroid form " diameter is 0.84 (i.e. radius of a ball SR0.42 among the figure); Its effectively the location height be increased to 0.84 by original 0.1, promoted 740%.Visible by above-mentioned several groups of correction datas; Convert the sheet scolder scolder of spheroid form into, its effective location highly can be increased considerably, therefore upper and lower mould 10, between 20; Perhaps the gap between sheet or column parts 52,54 and another mould also just can be relaxed significantly; Required precision to the graphite sintering mold just can descend significantly, and wherein, the flatness of the degree of depth b of graphite sintering mold and upper and lower mould 10,20 requires and can relax thereupon.
The present invention is in the process of freezing; The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle; Any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. the method for welding of a semi-conducting electrode assembly is characterized in that, comprising:
The graphite that comprises upper and lower mould sintering mold is provided, is reserved with fairlead in this mold;
Dress mould: electrode assemblie is packed in the bed die, build mold;
Put into the scolder of spheroid form through fairlead, put into semiconductor leads through fairlead again;
Electrode assemblie and semiconductor leads are carried out soldering.
2. the method for welding of semi-conducting electrode assembly as claimed in claim 1 is characterized in that, before the said dress mould step, also comprises the operation of electrode assemblie being carried out oil removing and removing oxide layer.
3. the method for welding of semi-conducting electrode assembly as claimed in claim 2 is characterized in that, said electrode assemblie is sheet or column parts, and the scolder through spheroid form between this sheet or column parts and the semiconductor leads carries out soldering.
4. the method for welding of semi-conducting electrode assembly as claimed in claim 3 is characterized in that, the sectional area of said semiconductor leads is less than the area of sheet or column parts soldering point place face.
5. the method for welding of semi-conducting electrode assembly as claimed in claim 4 is characterized in that, said sheet or column parts are cylindrical or square column type.
6. the method for welding of semi-conducting electrode assembly as claimed in claim 3 is characterized in that, the degree of depth of said graphite sintering mold is 0.2mm-3mm, and the thickness of sheet or column parts is 0.2mm-3mm.
7. the method for welding of semi-conducting electrode assembly as claimed in claim 1 is characterized in that, the scolder radius of said spheroid form is 0.3mm-3mm.
8. the method for welding of semi-conducting electrode assembly as claimed in claim 7 is characterized in that, said scolder adopts money base scolder AgCu28, copper parent metal TU1, auri scolder AuCu20 or titanium parent metal TiNi28 material.
9. the method for welding of semi-conducting electrode assembly as claimed in claim 1; It is characterized in that; Saidly electrode assemblie and semiconductor leads are carried out operating in of soldering freeze and carry out in the stove, the furnace temperature in this stove that freezes is 840 ℃ ± 30 ℃, and hydrogen flowing quantity is 15 liters/minute ± 5 liters/minute; Nitrogen flow is 12 liters/minute ± 5 liters/minute, and the time of freezing is 3min ± 1min.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210201713.5A CN102699466B (en) | 2012-06-19 | 2012-06-19 | The method for welding of semi-conducting electrode assembly |
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| CN201210201713.5A CN102699466B (en) | 2012-06-19 | 2012-06-19 | The method for welding of semi-conducting electrode assembly |
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| CN102699466A true CN102699466A (en) | 2012-10-03 |
| CN102699466B CN102699466B (en) | 2015-08-19 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105330317A (en) * | 2015-12-14 | 2016-02-17 | 福建闽航电子有限公司 | Ceramic shell brazing method |
| CN105355583A (en) * | 2015-12-14 | 2016-02-24 | 福建闽航电子有限公司 | Graphite boat for CPGA product assembly |
| CN107598316A (en) * | 2017-10-19 | 2018-01-19 | 福建闽航电子有限公司 | A kind of fever tablet nickel wire method for welding |
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| CN1554507A (en) * | 2003-12-23 | 2004-12-15 | 番禺得意精密电子工业有限公司 | Overlapping method for joint foot and welding flux and electronic element using such method |
| CN1759480A (en) * | 2003-03-10 | 2006-04-12 | 费查尔德半导体有限公司 | Dual metal stud bumping for flip chip applications |
| CN101582435A (en) * | 2008-05-16 | 2009-11-18 | 鸿富锦精密工业（深圳）有限公司 | Packaging structure for image sensing wafer and camera module applying same |
| CN201549493U (en) * | 2009-12-04 | 2010-08-11 | 中国振华集团永光电子有限公司 | Micro diode molybdenum electrode lead structure |
| US20120126418A1 (en) * | 2010-11-24 | 2012-05-24 | Texas Instruments Incorporated | Integrated circuit device having die bonded to the polymer side of a polymer substrate |
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2012
- 2012-06-19 CN CN201210201713.5A patent/CN102699466B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1759480A (en) * | 2003-03-10 | 2006-04-12 | 费查尔德半导体有限公司 | Dual metal stud bumping for flip chip applications |
| CN1554507A (en) * | 2003-12-23 | 2004-12-15 | 番禺得意精密电子工业有限公司 | Overlapping method for joint foot and welding flux and electronic element using such method |
| CN101582435A (en) * | 2008-05-16 | 2009-11-18 | 鸿富锦精密工业（深圳）有限公司 | Packaging structure for image sensing wafer and camera module applying same |
| CN201549493U (en) * | 2009-12-04 | 2010-08-11 | 中国振华集团永光电子有限公司 | Micro diode molybdenum electrode lead structure |
| US20120126418A1 (en) * | 2010-11-24 | 2012-05-24 | Texas Instruments Incorporated | Integrated circuit device having die bonded to the polymer side of a polymer substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105330317A (en) * | 2015-12-14 | 2016-02-17 | 福建闽航电子有限公司 | Ceramic shell brazing method |
| CN105355583A (en) * | 2015-12-14 | 2016-02-24 | 福建闽航电子有限公司 | Graphite boat for CPGA product assembly |
| CN105330317B (en) * | 2015-12-14 | 2017-12-19 | 福建闽航电子有限公司 | A kind of ceramic package method for welding |
| CN105355583B (en) * | 2015-12-14 | 2018-04-13 | 福建闽航电子有限公司 | A kind of graphite boat for CPGA Product Assemblies |
| CN107598316A (en) * | 2017-10-19 | 2018-01-19 | 福建闽航电子有限公司 | A kind of fever tablet nickel wire method for welding |
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| CN102699466B (en) | 2015-08-19 |
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