CN202008402U - Enhanced film body acoustic wave resonance ultraviolet detector - Google Patents
Enhanced film body acoustic wave resonance ultraviolet detector Download PDFInfo
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- CN202008402U CN202008402U CN2011200353486U CN201120035348U CN202008402U CN 202008402 U CN202008402 U CN 202008402U CN 2011200353486 U CN2011200353486 U CN 2011200353486U CN 201120035348 U CN201120035348 U CN 201120035348U CN 202008402 U CN202008402 U CN 202008402U
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Abstract
The utility model discloses an enhanced film body acoustic wave resonance ultraviolet detector, which comprises a piezoelectric film resonator, an ultraviolet reflection film and a transparent conducting film. The detector uses high-frequency body acoustic waves as the resonance mode, uses the ultraviolet reflection film and the transparent conducting film for enhancing the absorption of a piezoelectric film to the ultraviolet, and the sensitivity of the detector is improved. Doped zinc oxide materials are used as a piezoelectric film layer, the magnesium doping concentration can be regulated according to the ultraviolet center wave length to be measured, the sensitive range covers a wider spectrum range from low ultraviolet to deep ultraviolet, a Bragg reflection layer structure is adopted, the mechanical firmness is high, and the anti-impact force is strong. The enhanced film body acoustic wave resonance ultraviolet detector can be applied to the civil and military fields such as aerospace engineering, flame detection, biological effect, Internet of things, environment monitoring and the like.
Description
Technical field
The present invention relates to the ultraviolet light detector technical field, specifically, relate to the ultraviolet light detector of a kind of enhanced film bulk acoustic resonator.
Background technology
Ultraviolet light detector is a kind of very important optoelectronic device, is applied to civilian, military domain such as aerospace engineering, flame detecting, biological effect, communication and environmental monitoring.At present, the ultraviolet detector that has put it into commercial operation, mainly contain ultraviolet vacuum diode, ultravioplet photomultiplier, ultraviolet enhancer, ultraviolet pick-up tube and solid violet external detector etc., wherein Chang Yong photoconduction that is based on wide bandgap semiconductor materials and p-n junction device.Photoconduction and the ultraviolet light detector of p-n junction type all are to utilize the photo-generated carrier of semiconductor material to detect, and generally need the epitaxial semiconductor monocrystal thin films of high-crystal quality, and manufacturing cost is higher.
Resonant transducer is a kind of to detect its resonance frequency, phase place or the amplitude sensor that is changed to response with detection material, has been applied to multiple biochemistry detection field at present., existing literature finds that people such as the upright X.Qiu of university of State of Arizona, US have announced a kind of bulk acoustic wave ultraviolet light detector in 2009 for 191517 pages at App1ied Physics Letters (applied physics wall bulletin) the 94th volume through being retrieved.This bulk acoustic wave ultraviolet light detector is a core devices with a kind of piezoelectric thin film vibrator, excites high frequency bulk acoustic wave resonance about 1.46 GHzs by extra electric field in zno piezoelectric thin film.When UV-irradiation, the partial oxygen composition in the zno piezoelectric thin film breaks away from, and density changes, and causes that resonance frequency raises.Can detect ultraviolet ray intensity by the amplitude of measuring the rising of detector resonance frequency.Detector based on this principle only needs the polycrystalline piezoelectric membrane, and cost is lower.In addition, the high-frequency signal response speed is fast, noise is low, resolution is high, and is more conducive to digitizing and wireless transmission, more is applicable to wireless sensor network.But still there are many defectives in above-mentioned bulk acoustic wave ultraviolet light detector, as adopting the lower gold of ultraviolet transmission rate as top electrode, has influenced the sensitivity of piezoelectric membrane to ultraviolet light; Adopt intrinsic zinc paste as piezoelectric film material, the response spectrum interval is narrower and can't adjust; Adopt unsettled diaphragm structure, mechanical fastness is relatively poor.
Summary of the invention
The present invention is directed to the deficiencies in the prior art and defective, proposed the ultraviolet light detector of a kind of enhanced film bulk acoustic resonator.This detector utilizes existing microelectric technique to make, and it is interval wide and can adjust to have highly sensitive a, response spectrum, and mechanical fastness is strong, and detection signal is easy to advantages such as digitized processing, and is easy to realize array and as the sensor terminal of Internet of Things.
The present invention is achieved by the following technical solutions:
The ultraviolet light detector of a kind of enhanced film bulk acoustic resonator, comprise piezoelectric thin film vibrator, ultraviolet light reflectance coating and nesa coating, it is characterized in that, have the ultraviolet light reflectance coating and, set gradually substrate, sound wave Bragg reflecting layer, metal bottom electrode, ultraviolet light reflectance coating, piezoelectric membrane, nesa coating from bottom to top as the nesa coating of top electrode.
Described piezoelectric membrane is magnesium-doped zinc oxide material, and its preferred thickness is the 1-1.5 micron, and the doping content of magnesium is 1% to 3%.
Described ultraviolet light reflectance coating is magnesium fluoride or aluminium nitride film, its thickness be required measurement ultraviolet light centre wavelength 1/2nd.
Described nesa coating is the zinc oxide material of adulterated al, its thickness be required measurement ultraviolet light centre wavelength 1/4th, the doping content of aluminium is 1% to 10%.
The present invention utilizes extra electric field to be activated at and produces bulk acoustic wave resonance in the piezoelectric thin film vibrator, when UV-irradiation, partial oxygen composition in the zno piezoelectric thin film that is adsorbed on doping is broken away from, thereby its density is changed, this will cause that the bulk acoustic wave resonance frequency raises.The desorption rate of oxygen composition depends on incident uv intensity, and therefore the amplitude that raises by the survey sensor resonance frequency just can detect the intensity of incident uv.
Compare with technology in the past, the invention has the beneficial effects as follows: (1) utilizes the ultraviolet light reflectance coating that unabsorbed ultraviolet light is reflected once more and enters piezoelectric membrane, and use the less nesa coating alternative metals of UV Absorption as top electrode, strengthened the absorption of piezoelectric membrane, thereby improved detector sensitivity ultraviolet light; (2) use the zinc oxide material of doping as the piezoelectric sensitivity layer, can adjust the doping content of magnesium according to the ultraviolet light centre wavelength of required measurement, its sensitive range covers the broad spectrum range of low ultraviolet to deep ultraviolet, and this all has extremely important using value in the civilian and military field; (3) adopt the sound wave Bragg reflecting layer to substitute the diaphragm structure, mechanical fastness height, anti-impact force is strong.
Description of drawings
Accompanying drawing 1 is a cross-sectional view of the present invention
Accompanying drawing 3 is the impedance frequency response before and after the embodiment of the invention 2 irradiating ultraviolet light.
Drawing explanation: 1, substrate; 2, sound wave Bragg reflecting layer; 3, metal bottom electrode; 4, ultraviolet light reflectance coating; 5, piezoelectric sensitivity layer; 6, nesa coating
Embodiment
The ultraviolet light detector of a kind of enhanced film bulk acoustic resonator, comprise piezoelectric thin film vibrator, ultraviolet light reflectance coating and nesa coating, it is characterized in that, have ultraviolet light reflectance coating 4 and, set gradually substrate 1, sound wave Bragg reflecting layer 2, metal bottom electrode 3, ultraviolet light reflectance coating 4, piezoelectric membrane 5, nesa coating 6 from bottom to top as the nesa coating 6 of top electrode.
Present embodiment is for being 0.35 micron ultraviolet light detector at surveying centre wavelength.
Sound wave Bragg reflecting layer 2 is the tungsten in three cycles and the crossover layer of monox.
Ultraviolet light reflectance coating 4 is a magnesium fluoride film, and thickness is 0.175 micron.
Nesa coating 6 is the zinc oxide material of adulterated al, and its thickness is 0.0875 micron, and the doping content of aluminium is 8%.
During work, apply the radio frequency alternate electrical signal between metal bottom electrode 3 and the nesa coating 6, excitation bulk acoustic wave resonance in piezoelectric membrane.As shown in Figure 2, during no UV-irradiation, the device resonance frequency is 2530 megahertzes.When energy is that 0.35 micron ultraviolet lighting of 0.1 to 0.3 milliwatt is mapped to device constantly, make to be adsorbed on oxygen generation desorption in the magnesium-doped zinc paste, cause its density to change, thereby cause that the bulk acoustic wave resonance frequency raises.By external frequency detection circuit, can detect change of resonance frequency, obtain the energy value of ultraviolet light.
Present embodiment is for being 0.3 micron ultraviolet light detector at surveying centre wavelength.
Sound wave Bragg reflecting layer 2 is the tungsten in three cycles and the crossover layer of monox.
Ultraviolet light reflectance coating 4 is an aluminium nitride film, and thickness is 0.15 micron.
Nesa coating 6 is the zinc oxide material of adulterated al, and its thickness is 0.075 micron, and the doping content of aluminium is 4%.
During work, apply the radio frequency alternate electrical signal between metal bottom electrode 3 and the nesa coating 6, excitation bulk acoustic wave resonance in piezoelectric membrane.As shown in Figure 3, during no UV-irradiation, the device resonance frequency is 2011 megahertzes.When energy is that 0.35 micron ultraviolet lighting of 0.1 to 0.3 milliwatt is mapped to device constantly, make to be adsorbed on oxygen generation desorption in the magnesium-doped zinc paste, cause its density to change, thereby cause that the bulk acoustic wave resonance frequency raises.By external frequency detection circuit, can detect change of resonance frequency, obtain the energy value of ultraviolet light.
Claims (4)
1. enhanced film bulk acoustic resonator ultraviolet light detector, comprise piezoelectric thin film vibrator, ultraviolet light reflectance coating and nesa coating, it is characterized in that, have ultraviolet light reflectance coating (4) and, set gradually substrate (1), sound wave Bragg reflecting layer (2), metal bottom electrode (3), ultraviolet light reflectance coating (4), piezoelectric membrane (5) and nesa coating (6) from bottom to top as the nesa coating (6) of top electrode.
2. enhanced film bulk acoustic resonator according to claim 1 ultraviolet light detector is characterized in that, described piezoelectric membrane (5) is magnesium-doped zinc oxide material, and its preferred thickness is the 1-1.5 micron.
3. enhanced film bulk acoustic resonator according to claim 1 ultraviolet light detector is characterized in that, described ultraviolet light reflectance coating (4) is magnesium fluoride or aluminium nitride film, its thickness be required measurement ultraviolet light centre wavelength 1/2nd.
4. enhanced film bulk acoustic resonator according to claim 1 ultraviolet light detector is characterized in that, described nesa coating (6) is the zinc oxide material of adulterated al, its thickness be required measurement ultraviolet light centre wavelength 1/4th.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011200353486U CN202008402U (en) | 2011-02-10 | 2011-02-10 | Enhanced film body acoustic wave resonance ultraviolet detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011200353486U CN202008402U (en) | 2011-02-10 | 2011-02-10 | Enhanced film body acoustic wave resonance ultraviolet detector |
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| CN202008402U true CN202008402U (en) | 2011-10-12 |
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| CN2011200353486U Expired - Fee Related CN202008402U (en) | 2011-02-10 | 2011-02-10 | Enhanced film body acoustic wave resonance ultraviolet detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102175314A (en) * | 2011-02-10 | 2011-09-07 | 山东科技大学 | Enhanced film bulk acoustic wave resonance ultraviolet detector |
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2011
- 2011-02-10 CN CN2011200353486U patent/CN202008402U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102175314A (en) * | 2011-02-10 | 2011-09-07 | 山东科技大学 | Enhanced film bulk acoustic wave resonance ultraviolet detector |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111012 Termination date: 20120210 |