CN201985118U - Solar battery with scattering layer on electrode - Google Patents
Solar battery with scattering layer on electrode Download PDFInfo
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- CN201985118U CN201985118U CN2010205939526U CN201020593952U CN201985118U CN 201985118 U CN201985118 U CN 201985118U CN 2010205939526 U CN2010205939526 U CN 2010205939526U CN 201020593952 U CN201020593952 U CN 201020593952U CN 201985118 U CN201985118 U CN 201985118U
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 6
- 241001424688 Enceliopsis Species 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a solar battery, which comprises a base plate, an anti-reflection layer, an electrode structure and a scattering layer, wherein the anti-reflection layer is arranged on the base plate, the electrode structure is arranged on the anti-reflection layer, and the scattering layer is arranged on the electrode structure, comprises a plurality of scattering particles, is used for scattering light rays to the anti-reflection layer and has a photon conversion effect. The solar battery has the advantages that the wave length of the light rays emitted into the scattering layer can be converted into long wave length with a high photo electric conversion rate in the solar battery for improving the utilization rate of incident light rays, and further, the integral photo electric conversion rate of the solar battery can be effectively improved.
Description
Technical field
The utility model is about a kind of solar cell.
Background technology
Along with the soaring again and again and environmental consciousness new line gradually of oil price, people seek energetically and develop the alternative energy, and wherein solar energy be utilized as topmost technological development direction.
The kind of various solar cell is very many, its each tame manufactured materials, structural design are had nothing in common with each other, but the most basic structure of solar cell can be divided into the N type and three of p type semiconductor layer, anti-reflecting layer (anti-reflection layer) and metal electrodes etc. are partly main.N type and p type semiconductor layer are the sources that the photovoltaic special efficacy is answered; Anti-reflecting layer is to be used in to reduce reflection of incident light to strengthen electric current; Metal electrode then is to be used for coupling assembling and external loading.Wherein each member all has complicated processing procedure, the effect of manufacturing method thereof affects the conversion efficiency that solar energy converting is an electric energy, and the electrogenesis cost that can photoelectric conversion efficiency improve to reduce solar cell is the key factor that influences the development of solar energy industry.Therefore, the manufacturing method thereof that industry is injected huge fund and manpower removes to study solar cell is in the hope of obtaining higher opto-electronic conversion usefulness.
Known metal electrode structure comprises bus electrode (bus bar) and finger electrode (finger), and wherein, electronics is pooled to bus electrode by finger electrode, and by the bus electrode remittance abroad to external loading.But, the surface area that metal electrode covers on solar cell can cover the incident light of the sun, so the surface area that metal electrode covers on the solar cell must be as much as possible little, yet, in order to conduct enough electronic flows, metal electrode must have enough big conduction surface again.
In any case but accept or reject the surface area that metal electrode covers, metal electrode covers the amount of incident that surface area on the solar cell still can influence sunlight, reduces the photoelectric conversion efficiency of solar cell.
In view of this, how to provide a kind of solar cell, make the incident ray amount of solar cell increase,, become one of important topic to promote the efficient of opto-electronic conversion.
The utility model content
Because above-mentioned problem, the purpose of this utility model makes the incident ray amount of solar cell increase, to promote the efficient of opto-electronic conversion for a kind of solar cell is provided.
The utility model can be realized by the following technical solutions.
According to a kind of solar cell of the present utility model, comprise a substrate; One anti-reflecting layer is arranged on the substrate; One electrode structure is arranged on the anti-reflecting layer; And a scattering layer, be arranged on the electrode structure, it comprises a plurality of scattering particless, described scattering layer in order to light scatter to anti-reflecting layer, and it has photon conversion usefulness.
In an embodiment of the present utility model, substrate comprises at least one n type semiconductor layer and at least one p type semiconductor layer.
In an embodiment of the present utility model, substrate is amorphous silicon substrate, monocrystalline silicon substrate, polycrystalline silicon substrate, microcrystal silicon substrate or GaAs substrate.
In an embodiment of the present utility model, the material of anti-reflecting layer is silicon nitride, silica or silicon oxynitride.
In an embodiment of the present utility model, electrode structure has a plurality of bus electrodes and a plurality of finger electrode, and bus electrode is disposed on the anti-reflecting layer, and finger electrode is disposed on the both sides of bus electrode and is electrically connected to bus electrode.Preferably, scattering layer is arranged on the finger electrode.
In an embodiment of the present utility model, the scattering layer material is the light-permeable macromolecular material of doping scattering particles, and the refraction coefficient of light-permeable macromolecular material is greater than 1.1.
In an embodiment of the present utility model, scattering particles is fluorescent powder, organic fluorescence pigment, high molecular fluorescent material, inorganic fluorescent material, quantum dot fluorescence material, blend together the combination of fluorescent material, phosphorescence powder, dyestuff or above-mentioned material.
By technique scheme, a kind of solar cell of the present utility model has following advantage at least:
Because of foundation a kind of solar cell of the present utility model, utilization is arranged on the scattering layer on the electrode structure of solar cell, originally the light scatter that can be covered by electrode structure to anti-reflecting layer, is reduced the screening rate of incident ray, and has photon conversion usefulness.Compare with technique known, the utility model makes the incident ray amount of solar cell increase, preferably, scattering particles in the scattering layer is a fluorescent material, it has scattering and two kinds of functions of wavelength Conversion simultaneously, photon is after the scattering particles collision, it is longer not only can to produce the path that scattering phenomenon allows light pass through in whole solar cell, to increase photoelectric conversion efficiency, more the wavelength Conversion of injecting scattering layer light can be the preferable long wavelength of photoelectric conversion efficiency in solar cell, promoting the utilance of incident ray, and then improve the usefulness of solar cell integrated opto-electronic conversion effectively.
Description of drawings
Fig. 1 is the sectional structure chart of the solar cell of the utility model preferred embodiment;
Fig. 2 is the schematic perspective view of the solar cell of the utility model first preferred embodiment; And
Fig. 3 is the schematic perspective view of the solar cell of the utility model second preferred embodiment.
The main element symbol description:
1,2,3: solar cell
11: substrate
12: anti-reflecting layer
13: electrode structure
131: finger electrode
132: bus electrode
14,24,34: scattering layer
S1: scattering direction
Embodiment
Hereinafter with reference to correlative type, a kind of solar cell according to the utility model preferred embodiment is described, wherein identical assembly will be illustrated with the components identical symbol.
Please refer to Fig. 1, it is the sectional structure chart according to the solar cell of the utility model preferred embodiment.Solar cell 1 comprises a substrate 11; One anti-reflecting layer 12 is arranged on the substrate 11; One electrode structure 13 is arranged on the anti-reflecting layer 12; And a scattering layer 14, be arranged on the electrode structure 13, in order to light scatter to anti-reflecting layer 12.
The material of anti-reflecting layer 12 is silicon nitride, silica or silicon oxynitride.Anti-reflecting layer 12 is arranged on the irradiation surface of substrate 11, because the refraction coefficient difference of air and silicon is very big, has obvious light during the interface of light by air and silicon and reflect situation, so anti-reflecting layer 12 is arranged on substrate 11 and can reduces reflection of incident light.And anti-reflecting layer 12 forms a matsurface via surface treatment, makes anti-reflecting layer 12 have good anti-reflection effect, and also has the effect of passivation (passivation).On practice, also can use other can the material that silicon face carries out passivation be arranged on the substrate 11, and, form anti-reflecting layer 12 by modes such as coating, immersion, deposition, sprinkling, vacuum evaporation, screen painting, lithographic printing, sputter, some notes, cast or applyings.
Below please also refer to Figure 1 and Figure 2, Fig. 2 is the schematic perspective view of the solar cell of the utility model first preferred embodiment.
Electrode structure 13 has a plurality of bus electrodes 132 and a plurality of finger electrode 131, and bus electrode 132 is disposed on the anti-reflecting layer 12, and finger electrode 131 is disposed on the both sides of bus electrode 132 and is electrically connected to bus electrode 132.When the semiconductor layer of substrate 11 (figure does not show) when changing the light that absorbs into electronics, finger electrode 131 can be collected to the electronics that semiconductor layer produced the bus electrode 132 with its electric connection, last again by the binding of bus electrode and external loading, will be passed to the external world through the electron stream that light, electric conversion reaction produced.
In the present embodiment, bus electrode 132 is set parallel to each other in fact on substrate 11, and each bus electrode 132 is attached at an external loading (figure does not show), finger electrode 131 and the vertical in fact setting of bus electrode 132 simultaneously.And the method that forms its electrode structure 13 can be sputter, evaporation, coating, printing, ink jet printing and combination thereof.In addition, in the present embodiment, electrode structure 13 to be to comprise that two bus electrodes 132 and three finger electrodes 131 are example, so can be because of the demand difference, and the quantity of increase and decrease bus electrode 132 and finger electrode 131.
Scattering layer 14 is arranged on the electrode structure 13, and comprises a plurality of scattering particless (figure do not show), and scattering layer 14 can be with light scatter to anti-reflecting layer 12, and it has photon conversion usefulness.When sunray vertical irradiation during to scattering layer 14, light can form the scattered beam with scattering direction S1, in other words, the light scatter that scattering layer 14 will be originally covered by electrode structure 13 is to anti-reflecting layer 12, make the light amount inject substrate 11 increase, detailed execution mode can after embodiment in describe.Wherein, the method that forms scattering layer 14 can be sputter, evaporation, coating, printing, ink jet printing and combination thereof, and is non-in order to restriction the utility model.
Please refer to shown in Figure 2ly, in solar cell 2, scattering layer 24 is preferably disposed on the finger electrode 131 of electrode structure 13, and the light scatter that will expose to finger electrode 131 is to anti-reflecting layer 12.
In the present embodiment, the scattering particles in the scattering layer 24 is for fluorescent powder, organic fluorescence pigment, high molecular fluorescent material, inorganic fluorescent material, quantum dot fluorescence material, blend together the combination of fluorescent material, phosphorescence powder, dyestuff or above-mentioned material.Thereby, scattering particles has the function of scattering and wavelength Conversion simultaneously, phosphor particles in the sunray of incident exposes to the macromolecular material of scattering layer 24 light-permeables is not when (figure shows), photon can bump with phosphor particles, produce scattering phenomenon, cause the direction of motion of photon to change, the path that makes light pass through in whole solar cell 2 is longer, and then promotes the opto-electronic conversion usefulness of solar cell 2.Simultaneously, but phosphor particles is the short light of absorbing wavelength also, ultraviolet light for example, and long light such as the visible or infrared light of emit wavelength, use and make irradiation light after wavelength Conversion, the most of light that enters to the solar cell inner semiconductor layer all drops on the section of wavelength available, and then improves solar cell 2 for whole utilization of incident light.
And in the present embodiment, scattering layer 24 is made of the macromolecular material of the light-permeable above-mentioned scattering particles that mixes, and the refraction coefficient of the macromolecular material of its light-permeable sees through the scattering layer 24 of high index of refraction greater than 1.1, can reduce the reflectivity of sunray irradiation.In addition, in the manufacture process that forms scattering layer 24, may be set on the anti-reflecting layer 12 because of error causes the scattering layer 24 of small part, but by characteristic at scattering layer 24 light-permeables, its antireflection rate for anti-reflecting layer 12 can not cause too much influence, and, if the refraction coefficient of scattering layer 24 is preferably selected for use greater than 1.1 during less than the refraction coefficient of anti-reflecting layer 12, scattering layer 24, anti-reflecting layer 12, and the refractive index of the semiconductor layer of substrate will have the characteristic that increases progressively, more can reduce the reflectivity of light.
Please refer to shown in Figure 3ly, it is the schematic perspective view of the solar cell of the utility model second preferred embodiment.The difference of the solar cell 2 of itself and Fig. 2 is, in solar cell 3, scattering layer 34 is arranged on the bus electrode 132 and finger electrode 131 of electrode structure 13 simultaneously, with the light scatter that will expose to bus electrode 132 and finger electrode 131 to anti-reflecting layer 12, and it has photon conversion usefulness, can promote the light amount that enters substrate 11 and the utilance of incident ray simultaneously, reach the maximization that sunray utilizes.
In sum, because of according to a kind of solar cell of the present utility model, utilize the scattering layer on the electrode structure that is arranged on solar cell, with the light scatter that can be covered by electrode structure originally to anti-reflecting layer, reduce the screening rate of incident ray, and it has photon conversion usefulness.Compare with technique known, the utility model makes the incident ray amount of solar cell increase, preferably, scattering particles in the scattering layer is a fluorescent material, it has scattering and two kinds of functions of wavelength Conversion simultaneously, photon is after the scattering particles collision, it is longer not only can to produce the path that scattering phenomenon allows light pass through in whole solar cell, to increase photoelectric conversion efficiency, more the wavelength Conversion of injecting scattering layer light can be the preferable long wavelength of photoelectric conversion efficiency in solar cell, promoting the utilance of incident ray, and then improve the usefulness of solar cell integrated opto-electronic conversion effectively.
The above only is an illustrative, and non-limiting.Anyly do not break away from spirit of the present invention and category, and, all should be included in the claim institute restricted portion its equivalent modifications of carrying out or change.
Claims (6)
1. have the solar cell of scattering layer on the electrode, it is characterized in that, comprising:
One substrate;
One anti-reflecting layer is arranged on the described substrate;
One electrode structure is arranged on the described anti-reflecting layer; And
One scattering layer is arranged on the described electrode structure, and it comprises a plurality of scattering particless, described scattering layer in order to light scatter to described anti-reflecting layer, and it has photon conversion usefulness.
2. have the solar cell of scattering layer on the electrode according to claim 1, it is characterized in that, wherein said substrate comprises at least one n type semiconductor layer and at least one p type semiconductor layer.
3. have the solar cell of scattering layer on the electrode according to claim 1, it is characterized in that, wherein said substrate is amorphous silicon substrate, monocrystalline silicon substrate, polycrystalline silicon substrate, microcrystal silicon substrate or GaAs substrate.
4. have the solar cell of scattering layer on the electrode according to claim 1, it is characterized in that, the material of wherein said anti-reflecting layer is silicon nitride, silica or silicon oxynitride.
5. the solar cell that has scattering layer on the electrode according to claim 1, it is characterized in that, wherein said electrode structure has a plurality of bus electrodes and a plurality of finger electrode, described bus electrode is disposed on the described anti-reflecting layer, and described finger electrode is disposed on the both sides of described bus electrode and is electrically connected to described bus electrode.
6. have the solar cell of scattering layer on the electrode according to claim 5, it is characterized in that, wherein said scattering layer is arranged on the described finger electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205939526U CN201985118U (en) | 2010-10-29 | 2010-10-29 | Solar battery with scattering layer on electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205939526U CN201985118U (en) | 2010-10-29 | 2010-10-29 | Solar battery with scattering layer on electrode |
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| Publication Number | Publication Date |
|---|---|
| CN201985118U true CN201985118U (en) | 2011-09-21 |
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| CN2010205939526U Expired - Lifetime CN201985118U (en) | 2010-10-29 | 2010-10-29 | Solar battery with scattering layer on electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103822161A (en) * | 2014-03-19 | 2014-05-28 | 江西金泰新能源有限公司 | Solar energy lighting device |
| CN113903823A (en) * | 2021-09-27 | 2022-01-07 | 浙江爱旭太阳能科技有限公司 | Solar laminated cell module, preparation method thereof and photovoltaic system |
-
2010
- 2010-10-29 CN CN2010205939526U patent/CN201985118U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103822161A (en) * | 2014-03-19 | 2014-05-28 | 江西金泰新能源有限公司 | Solar energy lighting device |
| CN113903823A (en) * | 2021-09-27 | 2022-01-07 | 浙江爱旭太阳能科技有限公司 | Solar laminated cell module, preparation method thereof and photovoltaic system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 7, No. 3 Road, Xinzhu City, Hsinchu Science Industrial Park, Taiwan, China Patentee after: United Renewable Energy Co., Ltd. Address before: No. 7, No. 3 Road, Xinzhu City, Hsinchu Science Industrial Park, Taiwan, China Patentee before: Neo Solar Power Corporation |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110921 |
|
| CX01 | Expiry of patent term |