CN201946629U - LED (light-emitting diode) and LED substrate - Google Patents
LED (light-emitting diode) and LED substrate Download PDFInfo
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- CN201946629U CN201946629U CN2010206958187U CN201020695818U CN201946629U CN 201946629 U CN201946629 U CN 201946629U CN 2010206958187 U CN2010206958187 U CN 2010206958187U CN 201020695818 U CN201020695818 U CN 201020695818U CN 201946629 U CN201946629 U CN 201946629U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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Abstract
The utility model discloses an LED (light-emitting diode) and an LED substrate. The LED comprises a substrate with a cavity, a metal region arranged at the bottom of the cavity, an electrode region arranged at the back of the substrate and at least one LED chip. The metal region comprises a first wire welding region and a large-area first die bonding region. The electrode region comprises a second electrode and a third electrode which are respectively conducted with the first die bonding region and the first wire welding region. The LED chip is fixed in the first die bonding region. One electrode of the LED chip is electrically connected with the first die bonding region and the other electrode of the LED chip is electrically connected with the first wire welding region. The LED has a simple structure and low cost.
Description
Technical field
The utility model relates to light-emitting diode (LED), especially a kind of LED and LED substrate.
Background technology
Along with LED (Light Emitting Diode, light-emitting diode) development of technology, LED substitutes traditional CCFL (Cold Cathode Fluorescent Lamp, the cold cathode fluorescent lamp pipe) back light as LED TV (LCD TV) has been trend of the times, especially LED is applied on the back light aspect of large scale liquid crystal TV.
Fig. 1 is the front elevation of a kind of board structure in the prior art, comprise the ellipse or the square cavity that are arranged on substrate 1 inside, and first metal area 21 that is arranged on the space of cavity bottom, second metal area 22 and the 3rd metal area 23, second metal area 22 is used for fixing the LED sheet, and first metal area 21 and the 3rd metal area 23 are used for bonding wire.
Fig. 2 is the back view of a kind of board structure in the prior art, the first region 31, second electrode district 32 and the third electrode district 33 that comprise the space that is arranged on the substrate back, the first region 31, second electrode district 32 and third electrode district 33 are conducted with first metal area 21, second metal area 22 and the 3rd metal area 23 that are arranged on cavity bottom respectively.The mode of conducting can be that the through hole that penetrates into electrode district is set in the substrate of metal area bottom, and the filled conductive metal is to realize the electrical connection of metal area and electrode district in through hole.In above-mentioned electrode district, the first region and third electrode district use as powered electrode usually, and second electrode district uses as heat sink electrodes.
Fig. 3 is a kind of LED structural representation of the prior art, and a high-power LED chip 4 is fixed on the center of second metal area 22, and two electrode pin is electrically connected with first metal area 21 and the 3rd metal area 23 by gold thread respectively.Further, this LED can also comprise protection diode 5, and the protection diode is fixed on first metal area 21, is stagged electrode structure.Stagged electrode structure is meant that an electrode is arranged at protection diode bottom, and there is an electrode top, and the electrode of bottom is fixing and first metal area, 21 conductings with elargol, and the electrode of top is by gold thread and 23 conductings of the 3rd metal area.By the way, realize the reflection parallel connection of led chip and protection diode, led chip is worked under guard mode, improved fail safe.
The LED of said structure, because second metal area is only as fixed L ED chip, make second electrode district only as heat sink electrodes on the one hand, to realize LED work on the other hand, at least need to be provided with two wire welding areas (first metal area and the 3rd metal area), thereby make board structure and manufacturing process complexity, therefore, prior art also has the improved place of being worth.
Summary of the invention
The technical problem underlying that the utility model solves is that a kind of LED simple in structure is provided.
For solving the problems of the technologies described above, the utility model provides a kind of LED, the substrate that comprises attached cavity, be arranged on the metal area of described cavity bottom, be arranged on the electrode district at the back of described substrate, and at least one LEDs chip, described metal area comprises first wire welding area and large-area first crystal bonding area, comprise second electrode and third electrode in the described electrode district with described first crystal bonding area and the conducting of first wire welding area difference, described led chip is fixed in described first crystal bonding area, an electrode of described led chip is electrically connected with described first crystal bonding area, and another electrode is electrically connected with described first wire welding area.
Also comprise the protection diode, described protection diode is fixed in described first crystal bonding area, and an electrode of described protection diode is electrically connected with described first crystal bonding area, and another electrode is electrically connected with described first wire welding area by gold thread.
Described led chip is one, and an electrode of described led chip is electrically connected with described first crystal bonding area by gold thread, and another electrode is electrically connected with described first wire welding area by gold thread.
Described led chip is the led chip of two series connection, wherein a LEDs chip electrode is electrically connected with described first crystal bonding area, another electrode is electrically connected with an electrode of another LEDs chip, and another electrode of another LEDs chip is electrically connected with described first wire welding area.
Described metal area also comprises second crystal bonding area and second wire welding area, also comprises first electrode and the 4th electrode with described second crystal bonding area and the conducting of described second wire welding area difference in the described electrode district; Led chip fixing on described first crystal bonding area has two, wherein a LEDs chip electrode is electrically connected with described first crystal bonding area, another electrode is electrically connected with described first wire welding area, an electrode of another LEDs chip is electrically connected with described first crystal bonding area, and another electrode is electrically connected with described second wire welding area; Led chip fixing on described second crystal bonding area has one, and an electrode of this LEDs chip is electrically connected with second crystal bonding area, and another electrode is electrically connected with first crystal bonding area.
The sidewall of described cavity is provided with one deck step at least, and every layer of ledge surface silk-screen has argentum reflecting layer.
The position silk-screen that described substrate inside is in cavity bottom has at least one argentum reflecting layer.
The surface coverage of described led chip has the thin fluorescent material of one deck.
The colloid of filling in the described cavity forms the exiting surface of a plurality of lens-shapeds.
A kind of LED substrate, comprise attached cavity substrate, be arranged on cavity bottom metal area, be arranged on the electrode district at substrate back, described metal area comprises large-area first crystal bonding area and is arranged on described first crystal bonding area neighbouring second crystal bonding area, first wire welding area and second wire welding area, comprises second electrode, first electrode, third electrode and the 4th electrode with described first crystal bonding area, second crystal bonding area, first wire welding area and the conducting of second wire welding area difference in the described electrode district.
The beneficial effects of the utility model are: by a large-area crystal bonding area is set, led chip can be fixed on the crystal bonding area, to reduce thermal resistance by the mode of eutectic weldering; On the other hand, large-area crystal bonding area, make this crystal bonding area both can do solid brilliant using, also can be used for bonding wire, compared with prior art, a metal area can be set less at cavity bottom, correspondingly, also a cube electrode district can be set less at the substrate back, thereby save production cost, simplify the structure of LED.Simultaneously, by large-area crystal bonding area is set, this crystal bonding area can also be used for fixing two or more s' led chip, and the LED substrate uses more flexible.
Description of drawings
Fig. 1 is the front elevation of LED substrate in the prior art;
Fig. 2 is LED substrate back figure of the prior art;
Fig. 3 is a LED vertical view of the prior art;
Fig. 4 is the vertical view of the LED substrate of a kind of execution mode of the utility model;
Fig. 5 is the upward view of the LED substrate of a kind of execution mode of the utility model;
Fig. 6 is that the A-A of structure shown in Figure 4 is to profile;
Fig. 7 is the vertical view when fixing a LEDs chip in a kind of execution mode of the utility model;
Fig. 8 is the circuit diagram of a LEDs chip and the parallel connection of protection diode reverse;
Fig. 9 is the vertical view when fixing two LEDs chips in a kind of execution mode of the utility model;
Figure 10 is two LEDs chips series connection back and protection diode reverse circuit diagram in parallel;
Figure 11 is the vertical view when fixing three LEDs chips in a kind of execution mode of the utility model;
Figure 12 is the circuit diagrams of three LEDs chips when altogether anode connects;
Figure 13 is the LED cut-away view in a kind of execution mode of the utility model;
Figure 14 is the coupled structure figure of LED and light guide plate in a kind of execution mode of utility model.
Embodiment
In conjunction with the accompanying drawings the utility model is described in further detail below by embodiment.
Embodiment 1:
Be illustrated in figure 4 as the vertical view of board structure of the LED of a kind of execution mode of the utility model, this board structure comprises the spill cavity that is arranged on substrate inside, and first crystal bonding area 42 and first wire welding area 43 that are arranged on the space of cavity bottom, first crystal bonding area 42 and first wire welding area 43 can be partially submerged into substrate 1 inside, and the area of first crystal bonding area 42 makes it can be used for fixing one or plurality of LEDs chip.First wire welding area 43 be arranged on first crystal bonding area 42 around, close mutually with first crystal bonding area 42.First crystal bonding area 42 and first wire welding area 43 can adopt the manufacturing of silver metal material, can also be at the thin gold layer of silver metal laminar surface flash one deck or at the thin gold layer of the subregion of silver metal laminar surface flash, to improve conductive and heat-conductive efficient.
Figure 5 shows that the LED back structures schematic diagram of a kind of execution mode of the utility model, comprise second electrode 62 that is communicated with first crystal bonding area 42 and the third electrode 63 corresponding with first wire welding area 43, and, second electrode 62 is corresponding with first crystal bonding area 42 in the position at substrate back, area is slightly larger than the area of first crystal bonding area 42, second electrode 62 and first crystal bonding area 42 conduct, as shown in Figure 6, the mode of conducting can be that the through hole 5 that penetrates into the substrate back is set in the substrate of first crystal bonding area, 42 bottom sections, injects conducting mediums such as silver or tungsten and realize conducting of first crystal bonding area 42 and second electrode 62 in through hole 5.Third electrode 63 is provided with first wire welding area 43 and the mode of conducting can be identical with the setting and the conduction mode of first crystal bonding area 42 and second electrode 62.
Figure 7 shows that the structural representation when board structure of the present utility model is fixed a high-power LED chip, led chip 71 is fixed in the first solid brilliant electrode district 42 by modes such as eutectic welderings, its present position in first crystal bonding area 42 makes led chip 71 almost be positioned at the central authorities of substrate 1, to improve uniformity of luminance.Two electrodes of led chip 71 are conducted by gold thread and first crystal bonding area 42 and first wire welding area 43 respectively, the mode that realizes can be, get a gold thread, the one end is welded on the positivity electrode of led chip 71 after, the other end of gold thread is welded in first crystal bonding area 42; Get another root gold thread again, the one end is welded on the negativity electrode of led chip 71, the other end is welded in first wire welding area 43.Above-mentioned solid brilliant bonding wire mode makes first crystal bonding area 42 be used for solid crystalline substance and bonding wire simultaneously, and second electrode 62 that is conducted with first crystal bonding area 42 is used for heat radiation and conduction simultaneously.Aforesaid way is being fixed a LEDs chip, only need two sheet metals be set at cavity bottom, two sheet metals are set at the substrate back, be compared to and shown in Fig. 1 to 3 three sheet metals be set in cavity, the existing structure of three sheet metals is set at the substrate back, saved cost, made that also technology obtains simplifying.And because the area of first crystal bonding area 42 is bigger, led chip 71 can adopt the mode of eutectic weldering to realize solid crystalline substance, and the solid crystal type of eutectic weldering can effectively reduce thermal resistance, improves the reliability of LED.Simultaneously,, can also be used for fixing the plurality of LEDs chip because first crystal bonding area, 42 areas are bigger, such as, the situation when being used for fixing two middle power LED chips described below.
Figure 9 shows that the vertical view when first crystal bonding area 42 is used for fixing two LEDs chips.Led chip 72 and led chip 73 are arranged on first crystal bonding area 42 with keeping at a certain distance away, and an electrode of led chip 72 is electrically connected with first crystal bonding area 42 by gold thread, and another electrode is electrically connected with led chip 73 by gold thread.Another electrode of led chip 73 is electrically connected with first wire welding area 43 by gold thread.Thereby realize the series connection of two LEDs chips.
In useful application, in order to improve the fail safe of led chip, in the LED structure, also comprise the protection diode usually, protection diode and led chip reverse parallel connection are protected diode and led chip reflection circuit diagram in parallel as Fig. 8 with Figure 10 shows that.Therefore; as Fig. 7 and shown in Figure 9, can also fix a protection diode 8 in first crystal bonding area 42, protection diode 8 is a stagged electrode structure; the electrode of its below is fixing and first crystal bonding area, 42 conductings by elargol, and the electrode of top is electrically connected with first wire welding area 43 by gold thread.When the protection diode is set, it is arranged on the position of close first wire welding area 43 in first crystal bonding area 42, thereby shortens the wire length of protection diode.And in the prior art, as shown in Figure 3, the gold thread of protection diode makes that across second metal area bonding wire of protection diode is longer, and when large batch of production, this will exhaust great production cost.Therefore, set-up mode of the present utility model can shorten the wire length of protection diode, has saved production cost.
Said structure can be used for fixing three LEDs chips, and the utility model also provides a kind of structure that is more suitable for being used for fixing three LEDs chips.As shown in Figure 4, the metal area of two small sizes being set also around first crystal bonding area 42, is respectively second crystal bonding area 41 and second wire welding area 44.As shown in Figure 5, correspondingly, at first electrode 61 and four electrode 64 of substrate back setting with second crystal bonding area 41 and the 44 difference conductings of second wire welding area.Fig. 5 and Figure 6 shows that the structure that is used for fixing three LEDs chips, its fixed form that can adopt as shown in figure 11.If make the three-in-one LED of RGB of sun altogether, then led chip 74 adopts stagged electrode structure, and the electrode of its bottom is a negative electrode, is electrically connected with second crystal bonding area 41 by elargol is fixing, and the electrode of top is an anode, is electrically connected with first crystal bonding area 42 by gold thread; The anode of led chip 75 is electrically connected with first crystal bonding area 42 by gold thread, and negative electrode is electrically connected with second wire welding area 44 by gold thread; The anode of led chip 76 is electrically connected with first crystal bonding area 42 by gold thread, and negative electrode is electrically connected with first wire welding area 43 by gold thread.By above-mentioned set-up mode, make three LEDs chips realize the connected mode of anode altogether, its circuit is as shown in figure 12.If make the three-in-one LED of common cathode RGB, otherwise then.
When needs are made white light LEDs, can cooperate redness and green emitting phosphor to emit white light by in the aforesaid substrate structure, fixing the led chip of a blue light-emitting.Perhaps, in the aforesaid substrate structure, fix three glow respectively, the led chip of blue light and green glow, reach the scheme that combination emits white light by the brightness of regulating three LEDs chips.In one embodiment of the invention, in order to improve luminosity, the scheme that above-mentioned employing combination is emitted white light obtains better effect, as shown in Figure 6, it is step-like that the sidewall of cavity 2 is set to multilayer, the surface of each layer step and/or sidewall apply reflector 31, and such as argentum reflecting layer, argentum reflecting layer can the mode by silk-screen be realized when making substrate.In addition, can also be in the inside of substrate, corresponding to the location interval of the bottom of cavity one or more argentum reflecting layer 32 is set.
As shown in figure 13, in order to improve the glow color uniformity, led chip fixing in cavity can only be finished covering layer of fluorescent powder layer 9 on its surface by automatic fluorescent material coating machine.In order to improve the coupling efficiency of LED and light guide plate, the exiting surface of LED is formed the exiting surface of a plurality of array convex lens shape by the mode of compression molding.Coupled modes with the LED of this kind exiting surface and light guide plate as shown in figure 14, a plurality of LED are arranged on the MCPCB substrate 12 by the mode of welding, the exiting surface of LED has the small-sized convex lens 10 of a plurality of arrays, convex lens 10 spacings equate or do not wait, directly contact driving fit with light guide plate 11, directly light is imported in the light guide plate, improved coupling efficiency.
Above content be in conjunction with concrete execution mode to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection range of the present utility model.
Claims (10)
1. LED, the substrate that comprises attached cavity, be arranged on the metal area of described cavity bottom, be arranged on the electrode district at the back of described substrate, and at least one LEDs chip, it is characterized in that, described metal area comprises first wire welding area and large-area first crystal bonding area, comprise second electrode and third electrode in the described electrode district with described first crystal bonding area and the conducting of first wire welding area difference, described led chip is fixed in described first crystal bonding area, an electrode of described led chip is electrically connected with described first crystal bonding area, and another electrode is electrically connected with described first wire welding area.
2. LED according to claim 1; it is characterized in that, also comprise the protection diode, described protection diode is fixed in described first crystal bonding area; an electrode of described protection diode is electrically connected with described first crystal bonding area, and another electrode is electrically connected with described first wire welding area by gold thread.
3. LED as claimed in claim 2 is characterized in that, described led chip is one, and an electrode of described led chip is electrically connected with described first crystal bonding area by gold thread, and another electrode is electrically connected with described first wire welding area by gold thread.
4. LED as claimed in claim 2, it is characterized in that, described led chip is the led chip of two series connection, wherein a LEDs chip electrode is electrically connected with described first crystal bonding area, another electrode is electrically connected with an electrode of another LEDs chip, and another electrode of another LEDs chip is electrically connected with described first wire welding area.
5. LED as claimed in claim 1 is characterized in that, described metal area also comprises second crystal bonding area and second wire welding area, also comprises first electrode and the 4th electrode with described second crystal bonding area and the conducting of described second wire welding area difference in the described electrode district; Led chip fixing on described first crystal bonding area has two, wherein a LEDs chip electrode is electrically connected with described first crystal bonding area, another electrode is electrically connected with described first wire welding area, an electrode of another LEDs chip is electrically connected with described first crystal bonding area, and another electrode is electrically connected with described second wire welding area; Led chip fixing on described second crystal bonding area has one, and an electrode of this LEDs chip is electrically connected with second crystal bonding area, and another electrode is electrically connected with first crystal bonding area.
6. as LED as described in each in the claim 1 to 5, it is characterized in that the sidewall of described cavity is provided with one deck step at least, every layer of ledge surface and/or side silk-screen have argentum reflecting layer.
7. as each described LED in the claim 1 to 5, it is characterized in that the position silk-screen that described substrate inside is in cavity bottom has at least one argentum reflecting layer.
8. as each described LED in the claim 1 to 5, it is characterized in that the surface coverage of described led chip has layer of fluorescent powder.
9. as each described LED in the claim 1 to 5, it is characterized in that the colloid of filling in the described cavity forms the exiting surface of a plurality of lens-shapeds.
10. LED substrate, comprise attached cavity substrate, be arranged on cavity bottom metal area, be arranged on the electrode district at substrate back, it is characterized in that, described metal area comprises large-area first crystal bonding area and is arranged on described first crystal bonding area neighbouring second crystal bonding area, first wire welding area and second wire welding area, comprises second electrode, first electrode, third electrode and the 4th electrode with described first crystal bonding area, second crystal bonding area, first wire welding area and the conducting of second wire welding area difference in the described electrode district.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206958187U CN201946629U (en) | 2010-12-31 | 2010-12-31 | LED (light-emitting diode) and LED substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206958187U CN201946629U (en) | 2010-12-31 | 2010-12-31 | LED (light-emitting diode) and LED substrate |
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| Publication Number | Publication Date |
|---|---|
| CN201946629U true CN201946629U (en) | 2011-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206958187U Expired - Fee Related CN201946629U (en) | 2010-12-31 | 2010-12-31 | LED (light-emitting diode) and LED substrate |
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| CN (1) | CN201946629U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106164579A (en) * | 2014-05-20 | 2016-11-23 | 飞利浦照明控股有限公司 | The illumination of conformal coating or irradiation system |
| WO2019120482A1 (en) * | 2017-12-19 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Optoelectronic package |
-
2010
- 2010-12-31 CN CN2010206958187U patent/CN201946629U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106164579A (en) * | 2014-05-20 | 2016-11-23 | 飞利浦照明控股有限公司 | The illumination of conformal coating or irradiation system |
| CN106164579B (en) * | 2014-05-20 | 2018-09-18 | 飞利浦照明控股有限公司 | A kind of lighting apparatus and manufacturing method |
| WO2019120482A1 (en) * | 2017-12-19 | 2019-06-27 | Osram Opto Semiconductors Gmbh | Optoelectronic package |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110824 Termination date: 20181231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |