CN201909634U - Sensor chip - Google Patents
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- CN201909634U CN201909634U CN2010206546844U CN201020654684U CN201909634U CN 201909634 U CN201909634 U CN 201909634U CN 2010206546844 U CN2010206546844 U CN 2010206546844U CN 201020654684 U CN201020654684 U CN 201020654684U CN 201909634 U CN201909634 U CN 201909634U
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Abstract
A sensor chip belongs to the technical field of Hall Effect sensors. The hall sensor of the sensor chip depends on the magnetic field effect of a permanent magnet or an electromagnet to generate an output signal; the output signal performs linear transformation proportionately along with the intensity variation of the magnetic field; the position of the permanent magnet or the electromagnet is detected according to the intensity of the output signal; and the output adopts a rectilinear current source mode to effectively suppress noise. The chip has the characteristic of low output noise, does not need an external filter, and contains a thin film type resistor, so as to improve the stability and the accuracy of temperature. The sensor chip with an operating temperature range from minus 40 DEG C to 100 DEG C suits various civil-use, commercial-use, and industrial-use environments, and has the advantages that the size is small, the quiescent current is low (typical value is 3.5 mA under 5V), the electromagnetic conversion sensitivity is high, a single current source is adopted for output, the output noise is low, and the magnetic fields of both the South Pole and the North Pole can be responded.
Description
Technical field
The utility model relates to a kind of sensor chip, and it belongs to the hall effect sensor technical field.
Background technology
Hall element is a kind of magneto-dependent sensor based on Hall effect, can detect the magnetic flux density amount in the magnetic field, so it can use for example detection position and motion, detection electric current and power in the various occasions relevant with magnetic field.
Adopting high particular semiconductor material such as the InSb of carrier mobility to make the hall sensing sheet, so that Hall element has higher sensitivity under lower oneself power consumption, is the method that the easiest quilt is expected.Yet this but runs in the opposite direction with the developing direction of integrated this system of existing silica-based monolithic and circuit, thereby makes the manufacturing cost of sensor improve greatly.
The si-substrate integrated circuit manufacturing process has developed quite ripely at present, adopt in various that silica-based technology makes, the performance of extensive simulation, numeral and composite signal integrated circuits product quite stable all, therefore making the one chip hell integrated sensor that Hall element and signal processing circuit are integrated also is to be based on existing various si-substrate integrated circuit manufacturing process mostly.
From market, the Hall circuit main product of above-mentioned producer is a switching mode, is mainly used in radiator fan, and linear Hall is also few, so this project product will be opened up the frontier of Hall circuit.
Summary of the invention
In order to solve above-mentioned problems of the prior art, the utility model provides a kind of sensor chip.This sensor chip should have clear superiority at following aspect of performance: 1) You Yi temperature characterisitic, in-40 ℃ to+125 ℃ total temperature scope, variations such as output voltage are no more than 2%.2) high reliability, built-in various holding circuits make circuit at high temperature, are unlikely damage under the rugged surroundings such as high pressure.3) low output noise, antijamming capability is strong.4) compact conformation, chip area is little, and cost is low, has the very strong market competitiveness.
The technical solution adopted for the present invention to solve the technical problems is: a kind of sensor chip, it mainly adopts hall sensor, hall signal amplifier, output predrive circuit and excess voltage protection to be electrically connected.Described hall sensor relies on the action of a magnetic field of permanent magnet or electromagnet, make hall sensor produce an output signal, and this output signal proportional ground wire variation along with the power in magnetic field, detect the position of permanent magnet or electromagnet according to the size of output signal, the linear current source module that effectively suppresses noise is adopted in output.
Described hall signal amplifier is provided with a biasing circuit that small current constant-current source is provided with the output predrive circuit.
Described hall signal amplifier adopts the differential amplifier of a both-end input, single-ended output.
Described output predrive circuit adopts the driving circuit of a current-mode.
Above-mentioned circuit is an electromagnetic switching circuit, in order to the slight variation in magnetic field in the detection system.When no magnetic field (B=0GS), output voltage is about 1/2nd of supply voltage, and when South Pole in magnetic field during near circuit positive, output voltage will rise; Otherwise when arctic in magnetic field during near circuit positive, output voltage will descend.Rising or decline scope and added magnetic field are symmetrical.When designing requirement is 6V at supply voltage, the magnetic field sensitivity maximum of this circuit.Under the higher occasion of the alternative frequency in magnetic field, use, output signal can be capacitively coupled to subordinate's amplifier and amplify.
The beneficial effects of the utility model are: the hall sensor of this sensor chip relies on the action of a magnetic field of permanent magnet or electromagnet, make hall sensor produce an output signal, this output signal is proportional ground wire variation along with the power in magnetic field, detect the position of permanent magnet or electromagnet according to the size of output signal, the linear current source module that effectively suppresses noise is adopted in output.This chip has the low characteristics of output noise, no longer needs to adopt filtered external.It also contains diaphragm type resistance, can improve the stability and the accuracy of temperature.Its operating temperature range is-40 ℃ to 100 ℃, is applicable to various civilian, commerce and industrial environment condition.
External form is little, quiescent current is low (representative value is 3.5mA under the 5V), electromagnetic conversion is highly sensitive, single current source is exported, output noise is low, south poles magnetic field can both respond etc.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is a kind of sensor chip schematic diagram.
Fig. 2 is the circuit diagram of biasing and hall signal generator.
Fig. 3 is hall signal amplifier and output predrive circuit figure.
Embodiment
Fig. 1,2,3 shows a kind of schematic diagram and circuit diagram of sensor chip.As seen from the figure, this sensor chip partly is made up of hall sensor, hall signal amplifier, output predrive, overvoltage protection etc.
The main technical schemes that sensor chip adopts is: the action of a magnetic field that relies on permanent magnet or electromagnet is to hall sensor, make hall sensor produce a signal, and this signal proportional ground wire variation along with the power in magnetic field, because different magnetic field, position is strong and weak different, thereby can play detection effect according to the size of output signal to the position.Output adopts the linear current source module with effective inhibition noise.
Sensor chip is mainly used in: fields such as current sense, Motor Control, position sensing, magnetic code reading, rotary encoder, ferrous metal detector, vibrating sensing, level sensing, weight sensing.
This circuit is an electromagnetic switching circuit, in order to the slight variation in magnetic field in the detection system.When no magnetic field (B=0GS), output voltage is about 1/2nd of supply voltage, and when South Pole in magnetic field during near the front (index face) of circuit, output voltage will rise; Otherwise when arctic in magnetic field during near the front (index face) of circuit, output voltage will descend.Rising or decline scope and added magnetic field are symmetrical.
When designing requirement is 6V at supply voltage, the magnetic field sensitivity maximum of this circuit, but symmetry descends to some extent, and source current also can increase, and therefore corresponding use cost will increase.Unless, do not recommend such use generally speaking in the occasion that must improve output amplitude.Under the higher occasion of the alternative frequency in magnetic field, use, output signal can be capacitively coupled to subordinate's amplifier and amplify.
This circuit has the low characteristics of output noise, no longer needs to adopt filtered external.It also contains diaphragm type resistance, can improve the stability and the accuracy of temperature.Its operating temperature range is-40 ℃ to 100 ℃, is applicable to various civilian, commerce and industrial environment condition.
This circuit also has following characteristics: external form little (the encapsulation pattern is TO-92S), quiescent current low (representative value is 3.5mA under the 5V), electromagnetic conversion are highly sensitive, single current source output, output noise are low, south poles magnetic field can both respond or the like.
Product performance parameter (VCC=5V, Ta=25 ℃):
The circuit of 49E partly is made of biasing circuit, Hall signal generator, Hall signal amplifier, output predrive and holding circuit etc., the see before structural drawing of face of conspectus.
Biasing circuit is a small current constant-current source, current offset is provided for Hall signal amplifier and output circuit, from the output of " Bias1 " end.
The Hall signal generator can equivalence be an electric resistance array, when the chip, can induce a Hall signal as magnetic field, exports with the H2 two ends at H1.The size of Hall signal is relevant with the epitaxial thickness of chip and resistivity, also with adding magnetic field intensity relevant.For the convenience of chip testing, H1 and H2 end are also left the PAD window simultaneously, are convenient to force to add the Hall signal and are used for test.
The Hall signal amplification circuit is the differential amplifier that a both-end is imported single-ended output, and the Hall signal of amplification is located output at " Ho ", and dead level is by precision resister R1 and R2 decision, and Amplifier Gain is also by R1, and R2 and bias current determine.
The output predrive circuit is the driving circuit of a current-mode, and signal is from the output of " Out " end.
In addition, to ground, VCC is to OUT at VCC; OUT is to also being added with high tension protection circuit between the ground, basic structure adopts two reverse BE knots to add a small resistor, and the voltage breakdown of two reverse BE knots is about 15V; current limliting after small resistor is used to puncture is unlikely to make electric current excessive.
Innovation point
This product adopts the built-in one chip Integrated Solution of hall sensor, has solved the problem of electromagnetic compatibility effectively.Though circuit structure is also uncomplicated, more is to work hard from domain, main points are as follows:
(1) the Hall voltage generator adopts four rotational symmetry bridge-type ways of connecting designs, and it is placed in domain central authorities, to reduce various stress to its influence that causes;
(2) isolation channel around the Hall voltage generator adopts same size, and separates with an empty island between other devices, to guarantee the symmetry of four generators and peripheral devices thereof;
(3) pipe of reply mutually of the input pipe of differential amplifier and proportion current source, symmetric design and putting is to reduce imbalance;
(4) design rule of every device that links to each other with pressure point is all followed the ESD designs rule newly advanced;
(5) transistor that may enter state of saturation is all added dark phosphorus ring, and on the isolation channel around the pipe, stamp fairlead and be connected to ground wire, with the action of eliminating parasitic transistor and the possibility that reduces the generation latch-up;
Detect magnetic induction sensitivity when (6) design has 2 PAD to be used for survey (CP).
Claims (4)
1. sensor chip; it mainly adopts hall sensor, hall signal amplifier, output predrive circuit and excess voltage protection to be electrically connected; it is characterized in that: described hall sensor relies on the action of a magnetic field of permanent magnet or electromagnet; make hall sensor produce an output signal; this output signal is proportional ground wire variation along with the power in magnetic field; detect the position of permanent magnet or electromagnet according to the size of output signal, the linear current source module that effectively suppresses noise is adopted in output.
2. according to the described a kind of sensor chip of claim 1, it is characterized in that: described hall signal amplifier is provided with a biasing circuit that small current constant-current source is provided with the output predrive circuit.
3. according to the described a kind of sensor chip of claim 1, it is characterized in that: described hall signal amplifier adopts the differential amplifier of a both-end input, single-ended output.
4. according to the described a kind of sensor chip of claim 1, it is characterized in that: described output predrive circuit adopts the driving circuit of a current-mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206546844U CN201909634U (en) | 2010-12-11 | 2010-12-11 | Sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206546844U CN201909634U (en) | 2010-12-11 | 2010-12-11 | Sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201909634U true CN201909634U (en) | 2011-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206546844U Expired - Fee Related CN201909634U (en) | 2010-12-11 | 2010-12-11 | Sensor chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN201909634U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308075A (en) * | 2013-05-07 | 2013-09-18 | 赛卓电子科技（上海）有限公司 | Current output-type linear hall-effect sensor |
-
2010
- 2010-12-11 CN CN2010206546844U patent/CN201909634U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308075A (en) * | 2013-05-07 | 2013-09-18 | 赛卓电子科技（上海）有限公司 | Current output-type linear hall-effect sensor |
| CN103308075B (en) * | 2013-05-07 | 2016-08-03 | 赛卓电子科技（上海）有限公司 | Current output-type linear hall-effect sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20121211 |