CN104569867B - Superconductive quantum interference sensory package and the superconductive quantum interference sensor being applicable in - Google Patents
Superconductive quantum interference sensory package and the superconductive quantum interference sensor being applicable in Download PDFInfo
- Publication number
- CN104569867B CN104569867B CN201310517996.9A CN201310517996A CN104569867B CN 104569867 B CN104569867 B CN 104569867B CN 201310517996 A CN201310517996 A CN 201310517996A CN 104569867 B CN104569867 B CN 104569867B
- Authority
- CN
- China
- Prior art keywords
- quantum interference
- field
- sensory package
- interference device
- feedback coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The superconductive quantum interference sensor that the present invention provides a kind of superconductive quantum interference sensory package and is applicable in.The sensor includes：Superconductive quantum interference sensory package and the reading circuit connected.Wherein, the superconductive quantum interference sensory package includes：The superconducting quantum interference device being connected with external bias supply；With the feedback coil of the superconducting quantum interference device mutual inductance；The amplifying unit for being connected with the bias supply and feedback coil and being used to that the inductive signal that the feedback coil is exported to be amplified and be exported；The voltage increase unit of the output voltage of the superconducting quantum interference device is connected and improved with the superconducting quantum interference device.The present invention can effectively avoid shunting of the amplifying unit to inductive signal, and be amplified to the inductive signal.
Description
Technical field
The present invention relates to a kind of sensor structure, more particularly to a kind of superconductive quantum interference sensory package and it is applicable in
Superconductive quantum interference sensor.
Background technology
Superconducting quantum interference device（Superconducting Quantum Interference Device are hereinafter referred to as
SQUID）It is to be currently known most sensitive Magnetic Sensor, is detected in faint magnetic signal, such as heart magnetic, brain magnetic, nuclear magnetic resonance, earth object
There is important application in reason detection.
SQUID is superconduction macroscopic quantum effect device, and the inductive signal sensed is very faint, and peak response magnetic field is defeated
The voltage gone out only has tens uV.It is operated under ultra-low temperature surroundings, needs by longer（1 meter or more）Cable, could will feel
Induction signal is connected in the amplifier of room temperature, long transmission distance.Therefore in practical applications, weak output signal transmits SQUID sensors
Distance signal is easily decayed.
Due to the weak output signal of SQUID, the noise of ambient temperature amplifier connected to it will occupy an leading position, and can not play
The highly sensitive performance of SQUID device itself.Therefore the sensitivity of raising sensor is needed, sensor output signal, solution are increased
The problem of certainly amplifier matches.
Sensitivity, that is, magnetic flux voltage transmission rate of raising SQUID sensors, which is to provide, inhibits reading circuit preamplifier to make an uproar
The key factor of sound.
In order to improve the magnetic flux voltage transmission rate of SQUID sensors, people are by the feedback used in conventional magnetic sensors
Circuit has been applied in SQUID device.For example, as shown in Figure 1, being that the SQUID device increases by feeding back using mutual inductance principle
Thus feedback circuit that coil and resistance are constituted improves magnetic flux voltage transmission rate, but this mode is due to the shunting of resistance
Sacrifice the current amplitude of inductive signal so that the inductive signal exported is not amplified effectively not only, also becomes more micro-
It is weak.This allow the subsequent conditioning circuit in normal temperature environment to it is also required to provide more complicated circuit obtain accurately, the sense of low noise
Induction signal.Therefore, it is necessary to be improved to existing technology.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of superconductive quantum interference sensing groups
Part and the superconductive quantum interference sensor being applicable in, the superconductive quantum interference for solving to be in the prior art under superconduction environment
The faint problem of inductive signal that sensory package is exported.
In order to achieve the above objects and other related objects, the present invention provides a kind of superconductive quantum interference sensory package, until
Include less：The superconducting quantum interference device being connected with external bias supply；It is anti-with the superconducting quantum interference device mutual inductance
Feeder line circle；It is connected with the bias supply and feedback coil and for giving the inductive signal that the feedback coil is exported
The amplifying unit for amplifying and exporting；It connects with the superconducting quantum interference device and improves the superconducting quantum interference device
The voltage increase unit of output voltage.
Preferably, the voltage increase unit is diode.
Preferably, the mutual inductance M between the feedback coil and the superconducting quantum interference device meets：
And approach 1, whereinFor the magnetic flux voltage transmission rate of the superconducting quantum interference device, gmFor the amplifying unit
Mutual conductance.
Preferably, the sense incuded the superconducting quantum interference device according to the selected feedback coils of mutual inductance M
Induction signal is amplified.
Preferably, the amplifying unit is field-effect tube, wherein the source electrode of the field-effect tube and the feedback coil phase
Even, the grid of the field-effect tube is connected with the bias supply, and the drain electrode of the field-effect tube exports the inductive signal.
Preferably, the field-effect tube is P junction field effect transistors or N junction field effect transistors.
Preferably, the field-effect tube is P junction field effect transistors, then the drain electrode of the field-effect tube also passes through resistance
External negative supply；Or the field-effect tube be N junction field effect transistors, then the drain electrode of the field-effect tube also by resistance outside
Connect positive supply.
Preferably, the sensory package is located in the container for providing superconduction environment.
Preferably, the superconduction environment is the environment that temperature includes the liquid helium environment of 4.2K or liquid nitrogen that temperature is 77K.
Based on above-mentioned purpose, the present invention also provides a kind of superconductive quantum interference sensors, include at least：As above any in
The superconductive quantum interference sensory package；And the reading circuit being connect with the superconductive quantum interference sensory package.
As described above, the superconductive quantum interference sensory package of the present invention and the superconductive quantum interference sensor being applicable in, tool
There is following advantageous effect：Amplifying unit is connected with feedback coil, can effectively avoid shunting of the amplifying unit to inductive signal, and
The inductive signal is amplified.
Description of the drawings
Fig. 1 is shown as the structural schematic diagram of superconductive quantum interference sensory package in the prior art.
Fig. 2 is shown as the structural schematic diagram of the superconductive quantum interference sensory package of the present invention.
Fig. 3 is shown as a kind of structural schematic diagram of preferred embodiment of the superconductive quantum interference sensory package of the present invention.
Fig. 4 is shown as the structural schematic diagram of another preferred embodiment of the superconductive quantum interference sensory package of the present invention.
Fig. 5 is shown as the structural schematic diagram of the superconductive quantum interference sensor of the present invention.
Component label instructions
1 sensory package
11 superconducting quantum interference device
12 voltage increase units
13 feedback coils
14 amplifying units
2 bias supplies
3 reading circuits
4 sensors
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this explanations by particular specific embodiment below
Content disclosed by book understands other advantages and effect of the present invention easily.
Fig. 2 is please referred to Fig. 5.It should be clear that structure, ratio, size etc. depicted in this specification institute accompanying drawings, only to
Coordinate the revealed content of specification, so that those skilled in the art understands and reads, being not limited to the present invention can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of present invention can be generated and the purpose that can reach, should all still fall in disclosed skill
Art content obtains in the range of capable of covering.
As shown in Fig. 2, the present invention provides a kind of superconductive quantum interference sensory package.The sensory package 1 is located at superconducting ring
It in border, and is placed on in the environment of magnetic signal together with the superconduction environment, the magnetic signal detected is converted into sense
Induction signal（Electric signal）.The sensory package 1 includes：Superconducting quantum interference device 11, voltage increase unit 12, feedback coil 13
With amplifying unit 14.Wherein, the bias current that the sensory package 1 is provided by external bias supply 2 carrys out work.
The superconducting quantum interference device 11 is connected with the external bias supply 2, is used for based superconductive quantum interference
The magnetic signal detected is converted to electric signal by technology under superconduction environment, and is exported.
Specifically, the superconducting quantum interference device 11 detects the faint magnetic letter of certain frequency using superconductive quantum interference technology
Number, such as heart magnetic, brain magnetic, nuclear magnetic resonance or geophysics magnetic signal, and according to the magnetic signal detected change itself etc.
Resistance is imitated, to export corresponding electric signal.
The feedback coil 13 and 11 mutual inductance of the superconducting quantum interference device.
Specifically, the feedback coil 13 constitutes the mutual inductance circuit of positive feedback with the superconducting quantum interference device 11.Its
In, the mutual inductance of the basis for selecting of the feedback coil 13 between the feedback coil 13 and the superconducting quantum interference device 11
M meets：And approach 1, whereinIt is transmitted for the magnetic flux voltage of the superconducting quantum interference device 11
Rate, gmFor the mutual conductance of the amplifying unit 14.Preferably, according to the selected feedback coils 13 of the mutual inductance M by the superconduction
The inductive signal that quantum interference device 11 is incuded is amplified.
The amplifying unit 14 is connected with the bias supply 2 and feedback coil 13, is used for 13 institute of the feedback coil
The inductive signal of induction amplifies and exports again.
Specifically, the amplifying unit 14 is under the operating voltage that the bias supply 2 is provided, by the feedback coil
13 inductive signals sensed, which are amplified and exported to rear end, to be in the circuit of room temperature.Wherein, the amplifying unit 14
The amplifying unit 14 that preferably semiconductor devices is constituted.
Preferably, the amplifying unit 14 is field-effect tube, wherein the source electrode of the field-effect tube and the feedback coil
13 are connected, and the grid of the field-effect tube is connected with the bias supply 2, and the drain electrode of the field-effect tube exports the induction letter
Number.Wherein, the field-effect tube can be P junction field effect transistors or N junction field effect transistors.
The voltage increase unit 12 is connected with the superconducting quantum interference device 11, dry for improving the Superconducting Quantum
Relate to the output voltage of device 11.Wherein, the voltage increase unit 12 can be resistance.Preferably, the voltage increase unit
12 be diode.For example, the voltage increase unit 12 is germanium diode.
Specifically, the voltage increase unit 12 is connected between the superconducting quantum interference device 11 and ground wire, described
The output voltage of superconducting quantum interference device 11 is enhanced.In this way, the superconducting quantum interference device 11 is in higher biased electrical
Pressure effect is lower to have higher magnetic flux voltage transmission rate.
The structure example of the sensory package 1 is as follows：
As shown in figure 3, when the amplifying unit 14 is P junction field effect transistors, the voltage increase unit 12 is two
When pole pipe, external bias supply 2 is connected with the superconducting quantum interference device 11, the superconducting quantum interference device 11 and institute
The input terminal for stating diode is connected, and the output end ground connection of the diode, external bias supply 2 is also imitated with P junction types field
The grid of transistor is answered to be connected, the source electrode of the P junction field effect transistors is connected with the feedback coil 13, the P junction types
The drain electrode of field-effect transistor exports inductive signal, and the drain electrode also passes through the external positive supply of resistance, wherein the feedback coil
13 with 11 mutual inductance of superconducting quantum interference device.
The course of work of sensory package 1 corresponding to Fig. 3 is：
Since the conducting voltage of the diode is between 0.2~0.4V, external bias supply 2 be positive pressure simultaneously
The output voltage of the superconducting quantum interference device 11 is accordingly increased by 0.2~0.4V, under the action of the bias supply 2,
The magnetic signal detected is switched to inductive signal by the superconducting quantum interference device 11, and gives by the feedback coil 13
Once amplify and export to the P junction field effect transistors, the P junction field effect transistors are in 2 institute of the bias supply
Under the action of the operating voltage of offer, it is operated in amplification region, the inductive signal that the feedback coil 13 is exported is given second
Secondary amplification output.Wherein, the output current I of the P junction field effect transistorsoutWith experience magnetic field ΦeRelationship such as formula
1：In magnetic field Φ it can be seen from the formula 1eIn the case of constant, the P junction fields
Transistor is immobilising device, mutual conductance gmFor fixed value, therefore, institute output end current IoutIt is only influenced by mutual inductance M, as long as choosing
Mutual inductance M is selected to meetAnd the feedback coil 13 of approach 1, so that it may with by 11 institute of the superconducting quantum interference device
The faint inductive signal sensed is amplified to millivolt level, then the subsequent conditioning circuit being connected with the amplifying unit 14 can be easier
To the inductive signal carry out Integral Processing.
As shown in figure 4, when the amplifying unit 14 is N junction field effect transistors, the voltage increase unit 12 is two
When pole pipe, external bias supply 2 is connected with the superconducting quantum interference device 11, the superconducting quantum interference device 11 and institute
The output end for stating diode is connected, and the input end grounding of the diode, external bias supply 2 is also imitated with N junction types field
The grid of transistor is answered to be connected, the source electrode of the N junction field effect transistors is connected with the feedback coil 13, the N junction types
The drain electrode of field-effect transistor exports inductive signal, and the drain electrode also passes through the external negative supply of resistance, wherein the feedback coil
13 with 11 mutual inductance of superconducting quantum interference device.
The course of work of sensory package 1 corresponding to Fig. 4 is：
Since the conducting voltage of the diode is between 0.2~0.4V, external bias supply 2 be negative pressure simultaneously
The output voltage of the superconducting quantum interference device 11 is accordingly reduced into 0.2~0.4V, under the action of the bias supply 2,
The magnetic signal detected is switched to inductive signal by the superconducting quantum interference device 11, and gives by the feedback coil 13
Once amplify and export to the N junction field effect transistors, the N junction field effect transistors are in 2 institute of the bias supply
Under the action of the operating voltage of offer, it is operated in amplification region, the inductive signal that the feedback coil 13 is exported is given second
Secondary amplification output.Wherein, the output voltage V of the N junction field effect transistorsoWith experience magnetic field ΦeRelationship such as formula 2：In magnetic field Φ it can be seen from the formula 2eIn the case of constant, the N junction fields
Transistor is immobilising device, mutual conductance gmFor fixed value, therefore, institute output voltage VoOnly by mutual inductance M and the connected resistance that drains
The influence of R, as long as selection mutual inductance M meetsAnd the feedback coil 13 of approach 1, and suitable resistance R, just
The faint inductive signal that can be sensed the superconducting quantum interference device 11 is amplified to millivolt level, then with the amplification
The connected subsequent conditioning circuit of unit 14 easier can carry out Integral Processing to the inductive signal.
Preferably, the sensory package 1 further includes：Container（It is unillustrated）.
The container is by the superconducting quantum interference device 11, voltage increase unit 12, feedback coil 13 and amplifying unit
14 circuits constituted are included in superconduction environment, to detect magnetic signal.Wherein, it includes 4.2K that the superconduction environment, which is temperature,
Liquid helium environment or temperature be 77K liquid nitrogen environment.
As shown in figure 5, the present invention also provides a kind of superconductive quantum interference sensors 4.The superconductive quantum interference sensor 4
It is connected including as above any superconductive quantum interference sensory package 1, and with the superconductive quantum interference sensory package 1
Reading circuit 3.
The reading circuit 3 is located at normal temperature environment, for the amplifying unit in the superconductive quantum interference sensory package 1
14 inductive signals exported are further amplified and Integral Processing.Wherein, the reading circuit 3 includes：It is put with described
The preamplifier of the connection of big unit 14, the integrating circuit being connect with the preamplifier.
In conclusion the superconductive quantum interference sensory package of the present invention and the superconductive quantum interference sensor being applicable in, it will
Amplifying unit is connected with feedback coil, can effectively avoid shunting of the amplifying unit to inductive signal, and to the inductive signal into
Row amplification；Meanwhile the promotion by voltage increase unit to the bias voltage of the superconducting quantum interference device, it can effectively carry
High magnetic flux voltage transmission rate；In addition, selecting diode as voltage increase unit, resistance can be avoided to be generated with environmental change
Temperature drift or situations such as unstable resistance value；In addition, the amplifying unit uses the field-effect tube of semi-conducting material, it can be in superconducting ring
Noise and resistance characteristic caused by device itself are effectively reduced under border, be further reduced to the shunting function of inductive signal and
Influence of the temperature to magnetic flux voltage transmission rate.So the present invention effectively overcomes various shortcoming in the prior art and has height
Industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (4)
1. a kind of superconductive quantum interference sensory package, which is characterized in that include at least：
The superconducting quantum interference device being connected with external bias supply；
With the feedback coil of the superconducting quantum interference device mutual inductance；
It is connected with the bias supply and feedback coil and for being amplified the inductive signal that the feedback coil is exported
And the amplifying unit exported；
The voltage increase of the output voltage of the superconducting quantum interference device is connected and improved with the superconducting quantum interference device
Unit；
Mutual inductance M between the feedback coil and the superconducting quantum interference device meets：And approach 1,
Wherein,For the magnetic flux voltage transmission rate of the superconducting quantum interference device, gmFor the mutual conductance of the amplifying unit；
The amplifying unit is field-effect tube, wherein the source electrode of the field-effect tube is connected with the feedback coil, the field effect
Should the grid of pipe be connected with the bias supply, the drain electrode of the field-effect tube exports the inductive signal；
The field-effect tube is P junction field effect transistors or N junction field effect transistors；
The field-effect tube is P junction field effect transistors, then the drain electrode of the field-effect tube also passes through the external negative supply of resistance；
Or the field-effect tube is N junction field effect transistors, then the drain electrode of the field-effect tube also passes through the external positive supply of resistance；
The sensory package is located in the container for providing superconduction environment；
The superconduction environment is the environment that temperature includes the liquid helium environment of 4.2K or liquid nitrogen that temperature is 77K.
2. superconductive quantum interference sensory package according to claim 1, which is characterized in that the voltage increase unit is two
Pole pipe.
3. superconductive quantum interference sensory package according to claim 1, which is characterized in that selected by the mutual inductance M
Feedback coil the inductive signal that the superconducting quantum interference device is incuded is amplified.
4. a kind of superconductive quantum interference sensor, which is characterized in that include at least：It is super as described in any in claim 1-3
Lead quantum interference sensory package；And the reading circuit being connect with the superconductive quantum interference sensory package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310517996.9A CN104569867B (en) | 2013-10-28 | 2013-10-28 | Superconductive quantum interference sensory package and the superconductive quantum interference sensor being applicable in |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310517996.9A CN104569867B (en) | 2013-10-28 | 2013-10-28 | Superconductive quantum interference sensory package and the superconductive quantum interference sensor being applicable in |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104569867A CN104569867A (en) | 2015-04-29 |
| CN104569867B true CN104569867B (en) | 2018-07-20 |
Family
ID=53086389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310517996.9A Active CN104569867B (en) | 2013-10-28 | 2013-10-28 | Superconductive quantum interference sensory package and the superconductive quantum interference sensor being applicable in |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104569867B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346740B (en) * | 2018-01-23 | 2021-04-27 | 湖北工业大学 | Quantum interference transistor based on self-excitation single-electron spin electromagnetic transistor |
| CN110632423B (en) * | 2019-09-26 | 2021-05-11 | 中国科学院上海微系统与信息技术研究所 | Low-temperature physical property testing system and device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453690A (en) * | 1992-08-22 | 1995-09-26 | U.S. Philips Corporation | Squid magnetometer in which feedback current for a squid flux-locked-loop is conductively coupled into the input circuit of the squid |
| CN102483444A (en) * | 2009-09-09 | 2012-05-30 | 于利希研究中心有限公司 | Squid with coil inductively coupled to squid via mutual inductance |
| CN203519807U (en) * | 2013-10-28 | 2014-04-02 | 中国科学院上海微系统与信息技术研究所 | Superconducting quantum interference sensing assembly and superconducting quantum interference sensor applied thereto |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0984252A (en) * | 1995-09-12 | 1997-03-28 | Mitsubishi Electric Corp | Superconducting coil quench detector |
| US7619223B2 (en) * | 2003-03-14 | 2009-11-17 | Panasonic Corporation | Beam current measuring instrument and beam current measuring method using same |
-
2013
- 2013-10-28 CN CN201310517996.9A patent/CN104569867B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453690A (en) * | 1992-08-22 | 1995-09-26 | U.S. Philips Corporation | Squid magnetometer in which feedback current for a squid flux-locked-loop is conductively coupled into the input circuit of the squid |
| CN102483444A (en) * | 2009-09-09 | 2012-05-30 | 于利希研究中心有限公司 | Squid with coil inductively coupled to squid via mutual inductance |
| CN203519807U (en) * | 2013-10-28 | 2014-04-02 | 中国科学院上海微系统与信息技术研究所 | Superconducting quantum interference sensing assembly and superconducting quantum interference sensor applied thereto |
Non-Patent Citations (2)
| Title |
|---|
| Comparison of Noise Performance of the dc SQUID Bootstrap Circuit With That of the Standard Flux Modulation dc SQUID Readout Scheme;Yi Zhang 等;《IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY》;20110630;第21卷(第3期);第501-504页 * |
| SQUID读出电路的仿真及其调试电路的设计;王永良等;《稀有金属材料与工程》;20081031;第37卷(第4期);第457-460页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104569867A (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI365989B (en) | Semiconductor device and method for manufacturing the same | |
| Xie et al. | A voltage biased superconducting quantum interference device bootstrap circuit | |
| US10277992B2 (en) | TMR near-field magnetic communication system | |
| CN102483444A (en) | Squid with coil inductively coupled to squid via mutual inductance | |
| CN104569867B (en) | Superconductive quantum interference sensory package and the superconductive quantum interference sensor being applicable in | |
| WO2020112225A1 (en) | Isolated data transfer system | |
| CN203376462U (en) | Superconductive quantum interference sensor and magnetic detector used for the same | |
| CN104297703B (en) | Superconductive quantum interference sensor and the magnetic detector being suitable for | |
| CN203519807U (en) | Superconducting quantum interference sensing assembly and superconducting quantum interference sensor applied thereto | |
| CN104345758A (en) | Biased amplifier circuit of superconducting quantum interference device | |
| CN104569868A (en) | Superconducting quantum interference device | |
| US9453891B2 (en) | Magnetic field detection device | |
| CN106556729A (en) | A kind of current measuring device | |
| CN109857099A (en) | A kind of magnetic tracking sensor and the method for sensing using the sensor | |
| CN206489184U (en) | The acceleration transducer of compatible low and high level self-inspection | |
| CN104034938A (en) | Current detection circuit in electronic voltage transformer | |
| CN203929849U (en) | Current detection circuit in a kind of electronic type voltage transformer | |
| CN106443508A (en) | Low-noise and high-sensitivity inductive magnetic sensor | |
| CN201909634U (en) | Sensor chip | |
| US20230176111A1 (en) | Magneto-electric sensor for hardware trojan detection | |
| Zhang et al. | An approach to optimization of the superconducting quantum interference device bootstrap circuit | |
| CN205786802U (en) | Closed-loop Hall current sensor circuit containing the integrated chip of DRV411 | |
| CN218473141U (en) | Processing isolation circuit for analog input signal | |
| CN203786280U (en) | Unipolar magnetic sensing device | |
| CN203365514U (en) | Access protection circuit of superconducting quantum interference device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |