CN104569867A - Superconducting quantum interference sensing assembly and applicable superconducting quantum interference sensor - Google Patents
Superconducting quantum interference sensing assembly and applicable superconducting quantum interference sensor Download PDFInfo
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- CN104569867A CN104569867A CN201310517996.9A CN201310517996A CN104569867A CN 104569867 A CN104569867 A CN 104569867A CN 201310517996 A CN201310517996 A CN 201310517996A CN 104569867 A CN104569867 A CN 104569867A
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Abstract
The invention provides a superconducting quantum interference sensing assembly and an applicable superconducting quantum interference sensor. The sensor comprises the superconducting quantum interference sensing assembly and a connected reading circuit. The superconducting quantum interference sensing assembly comprises a superconducting quantum interference device connected with an external bias power supply, a feedback coil mutually induced with the superconducting quantum interference device, an amplification unit connected with the bias power supply and the feedback coil and used for amplifying and outputting a sensing signal output by the feedback coil, and a voltage boosting unit connected in series with the superconducting quantum interference device and boosting output voltage of the superconducting quantum interference device. According to the assembly and the sensor, the amplification unit can be effectively prevented from shunting the sensing signal, and amplify the sensing signal.
Description
Technical field
The present invention relates to a kind of sensor construction, particularly relate to a kind of superconductive quantum interference sensory package and the superconductive quantum interference sensor that is suitable for.
Background technology
Superconducting quantum interference device (Superconducting Quantum Interference Device is hereinafter referred to as SQUID) is the sensitiveest known Magnetic Sensor at present, detect at faint magnetic signal, after one's own heart in magnetic, brain magnetic, nuclear magnetic resonance, geophysical exploration, there is important application.
SQUID is superconduction macroscopic quantum effect device, and its induced signal sensed is very faint, and the voltage that peak response magnetic field exports only has tens uV.Under being operated in ultra-low temperature surroundings, need, by the cable of longer (more than 1 meter), could induced signal be received in the amplifier of normal temperature, long transmission distance.Therefore SQUID sensor in actual applications, weak output signal, number easily decay of transmission range long letter.
Due to the weak output signal of SQUID, the noise of connected ambient temperature amplifier will be occupied an leading position, and cannot play the high sensitivity performance of SQUID device itself.Therefore need the sensitivity improving sensor, increase sensor output signal, solve the problem of amplifier coupling.
The sensitivity and the magnetic flux voltage transfer rate that improve SQUID sensor are to provide the key factor suppressing sensing circuit prime amplifier noise.
In order to improve the magnetic flux voltage transfer rate of SQUID sensor, the feedback circuit used in conventional magnetic sensors has been applied in SQUID device by people.Such as, as shown in Figure 1, mutual inductance principle is utilized to be that described SQUID device increases the feedback circuit be made up of tickler and resistance, improve magnetic flux voltage transfer rate thus, but this mode sacrifices the current amplitude of induced signal due to the shunting of resistance, exported induced signal is not only effectively amplified, also becomes fainter.This allows the subsequent conditioning circuit being in normal temperature environment also need to provide, and more complicated circuit obtains accurately, the induced signal of low noise.Therefore, need to improve existing technology.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of superconductive quantum interference sensory package and the superconductive quantum interference sensor that is suitable for, for solving in prior art the faint problem of induced signal that the superconductive quantum interference sensory package be under superconduction environment exports.
For achieving the above object and other relevant objects, the invention provides a kind of superconductive quantum interference sensory package, it at least comprises: the superconducting quantum interference device be connected with external bias supply; With the tickler of described superconducting quantum interference device mutual inductance; To be connected with tickler with described bias supply and induced signal for being exported by described tickler is amplified and the amplifying unit exported; Connect with described superconducting quantum interference device and improve the voltage lift unit of the output voltage of described superconducting quantum interference device.
Preferably, described voltage lift unit is diode.
Preferably, the mutual inductance M between described tickler and described superconducting quantum interference device meets:
and convergence 1, wherein,
for the magnetic flux voltage transfer rate of described superconducting quantum interference device, g
mfor the mutual conductance of described amplifying unit.
Preferably, the induced signal that described superconducting quantum interference device is responded to is amplified by the tickler selected by described mutual inductance M.
Preferably, described amplifying unit is field effect transistor, and wherein, the source electrode of described field effect transistor is connected with described tickler, and the grid of described field effect transistor is connected with described bias supply, and the drain electrode of described field effect transistor exports described induced signal.
Preferably, described field effect transistor is P junction field effect transistor or N junction field effect transistor.
Preferably, described field effect transistor is P junction field effect transistor, then the drain electrode of described field effect transistor is also by the external negative supply of resistance; Or described field effect transistor is N junction field effect transistor, then the drain electrode of described field effect transistor is also by the external positive supply of resistance.
Preferably, described sensory package is arranged in the container providing superconduction environment.
Preferably, described superconduction environment is the environment that temperature comprises that the liquid helium environment of 4.2K or temperature are the liquid nitrogen of 77K.
Based on above-mentioned purpose, the present invention also provides a kind of superconductive quantum interference sensor, and it at least comprises: as upper arbitrary as described in superconductive quantum interference sensory package; And the sensing circuit to be connected with described superconductive quantum interference sensory package.
As mentioned above, superconductive quantum interference sensory package of the present invention and the superconductive quantum interference sensor that is suitable for, there is following beneficial effect: be connected with tickler by amplifying unit, amplifying unit effectively can be avoided the shunting of induced signal, and described induced signal is amplified.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of superconductive quantum interference sensory package of the prior art.
Fig. 2 is shown as the structural representation of superconductive quantum interference sensory package of the present invention.
Fig. 3 is shown as the structural representation of a kind of preferred version of superconductive quantum interference sensory package of the present invention.
Fig. 4 is shown as the structural representation of another preferred version of superconductive quantum interference sensory package of the present invention.
Fig. 5 is shown as the structural representation of superconductive quantum interference sensor of the present invention.
Element numbers explanation
1 sensory package
11 superconducting quantum interference device
12 voltage lift units
13 ticklers
14 amplifying units
2 bias supplies
3 sensing circuits
4 sensors
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, person skilled in the art scholar the content disclosed by this instructions can understand other advantages of the present invention and effect easily.
Refer to Fig. 2 to Fig. 5.Notice, structure, ratio, size etc. that this instructions institute accompanying drawings illustrates, content all only in order to coordinate instructions to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the present invention, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the present invention can produce and the object that can reach, still all should drop on disclosed technology contents and obtain in the scope that can contain.
As shown in Figure 2, the invention provides a kind of superconductive quantum interference sensory package.Described sensory package 1 is arranged in superconduction environment, and under being together placed on the environment with magnetic signal with described superconduction environment, so that detected magnetic signal is converted to induced signal (electric signal).Described sensory package 1 comprises: superconducting quantum interference device 11, voltage lift unit 12, tickler 13 and amplifying unit 14.Wherein, the bias current that described sensory package 1 provides by external bias supply 2 carrys out work.
Described superconducting quantum interference device 11 is connected with described external bias supply 2, under superconduction environment, detected magnetic signal is converted to electric signal, and is exported for based superconductive quantum interference technology.
Particularly, described superconducting quantum interference device 11 utilizes superconductive quantum interference technology to detect the faint magnetic signal of certain frequency, after one's own heart magnetic, brain magnetic, nuclear magnetic resonance or geophysics magnetic signals etc., and the equivalent resistance changing self according to detected magnetic signal, to export corresponding electric signal.
Described tickler 13 and the mutual inductance of described superconducting quantum interference device 11.
Particularly, described tickler 13 and described superconducting quantum interference device 11 form the mutual inductance circuit of positive feedback.Wherein, the basis for selecting of described tickler 13 is that mutual inductance M between described tickler 13 and described superconducting quantum interference device 11 meets:
and convergence 1, wherein,
for the magnetic flux voltage transfer rate of described superconducting quantum interference device 11, g
mfor the mutual conductance of described amplifying unit 14.Preferably, the induced signal that described superconducting quantum interference device 11 is responded to is amplified by the tickler 13 selected by described mutual inductance M.
Described amplifying unit 14 is connected with tickler 13 with described bias supply 2, again amplifies for the induced signal responded to by described tickler 13 and exports.
Particularly, under the operating voltage that described amplifying unit 14 provides at described bias supply 2, the induced signal that described tickler 13 senses is amplified and exported to rear end be in the circuit of normal temperature.Wherein, described amplifying unit 14 is preferably the amplifying unit 14 that semiconductor devices is formed.
Preferably, described amplifying unit 14 is field effect transistor, and wherein, the source electrode of described field effect transistor is connected with described tickler 13, and the grid of described field effect transistor is connected with described bias supply 2, and the drain electrode of described field effect transistor exports described induced signal.Wherein, described field effect transistor can be P junction field effect transistor or N junction field effect transistor.
Described voltage lift unit 12 is connected with described superconducting quantum interference device 11, for improving the output voltage of described superconducting quantum interference device 11.Wherein, described voltage lift unit 12 can be resistance.Preferably, described voltage lift unit 12 is diode.Such as, described voltage lift unit 12 is germanium diode.
Particularly, described voltage lift unit 12 is connected between described superconducting quantum interference device 11 and ground wire, and the output voltage of described superconducting quantum interference device 11 is enhanced.So, described superconducting quantum interference device 11 has higher magnetic flux voltage transfer rate under higher bias voltage effect.
The structure example of described sensory package 1 is as follows:
As shown in Figure 3, when described amplifying unit 14 is P junction field effect transistor, when described voltage lift unit 12 is diode, external bias supply 2 is connected with described superconducting quantum interference device 11, described superconducting quantum interference device 11 is connected with the input end of described diode, the output head grounding of described diode, external bias supply 2 is also connected with the grid of described P junction field effect transistor, the source electrode of described P junction field effect transistor is connected with described tickler 13, the drain electrode of described P junction field effect transistor exports induced signal, described drain electrode is also by the external positive supply of resistance, wherein, described tickler 13 and superconducting quantum interference device 11 mutual inductance.
The course of work of the sensory package 1 corresponding to Fig. 3 is:
Because the forward voltage of described diode is between 0.2 ~ 0.4V, therefore, external bias supply 2 is malleation and by corresponding for the output voltage of described superconducting quantum interference device 11 increase by 0.2 ~ 0.4V, under the effect of described bias supply 2, described superconducting quantum interference device 11 transfers detected magnetic signal to induced signal, and give amplifying and exporting described P junction field effect transistor to for the first time by described tickler 13, under the effect of the operating voltage that described P junction field effect transistor provides at described bias supply 2, be operated in amplification region, the induced signal that described tickler 13 exports is given second time and amplify output.Wherein, the output current I of described P junction field effect transistor
outwith experience magnetic field Φ
erelation as formula 1:
as can be seen from this formula 1, at magnetic field Φ
ewhen constant, described P junction field effect transistor is immobilising device, its mutual conductance g
mfor fixed value, therefore, institute output end current I
outonly by the impact of mutual inductance M, as long as select mutual inductance M to meet
and the tickler 13 of convergence 1, just the faint induced signal that described superconducting quantum interference device 11 senses can be amplified to millivolt level, then the subsequent conditioning circuit be connected with described amplifying unit 14 easierly can carry out Integral Processing to described induced signal.
As shown in Figure 4, when described amplifying unit 14 is N junction field effect transistor, when described voltage lift unit 12 is diode, external bias supply 2 is connected with described superconducting quantum interference device 11, described superconducting quantum interference device 11 is connected with the output terminal of described diode, the input end grounding of described diode, external bias supply 2 is also connected with the grid of described N junction field effect transistor, the source electrode of described N junction field effect transistor is connected with described tickler 13, the drain electrode of described N junction field effect transistor exports induced signal, described drain electrode is also by the external negative supply of resistance, wherein, described tickler 13 and superconducting quantum interference device 11 mutual inductance.
The course of work of the sensory package 1 corresponding to Fig. 4 is:
Because the forward voltage of described diode is between 0.2 ~ 0.4V, therefore, external bias supply 2 is negative pressure and by corresponding for the output voltage of described superconducting quantum interference device 11 reduction by 0.2 ~ 0.4V, under the effect of described bias supply 2, described superconducting quantum interference device 11 transfers detected magnetic signal to induced signal, and give amplifying and exporting described N junction field effect transistor to for the first time by described tickler 13, under the effect of the operating voltage that described N junction field effect transistor provides at described bias supply 2, be operated in amplification region, the induced signal that described tickler 13 exports is given second time and amplify output.Wherein, the output voltage V of described N junction field effect transistor
owith experience magnetic field Φ
erelation as formula 2:
as can be seen from this formula 2, at magnetic field Φ
ewhen constant, described N junction field effect transistor is immobilising device, its mutual conductance g
mfor fixed value, therefore, institute output voltage V
oonly by the impact of mutual inductance M with the resistance R be connected that drains, as long as select mutual inductance M to meet
and the tickler 13 of convergence 1, and suitable resistance R, just the faint induced signal that described superconducting quantum interference device 11 senses can be amplified to millivolt level, then the subsequent conditioning circuit be connected with described amplifying unit 14 easierly can carry out Integral Processing to described induced signal.
Preferably, described sensory package 1 also comprises: container (not giving diagram).
The circuit that described superconducting quantum interference device 11, voltage lift unit 12, tickler 13 and amplifying unit 14 are formed is included in superconduction environment, to detect magnetic signal by described container.Wherein, described superconduction environment is the environment that temperature comprises that the liquid helium environment of 4.2K or temperature are the liquid nitrogen of 77K.
As shown in Figure 5, the present invention also provides a kind of superconductive quantum interference sensor 4.Described superconductive quantum interference sensor 4 comprises the superconductive quantum interference sensory package 1 as above described in any one, and the sensing circuit 3 be connected with described superconductive quantum interference sensory package 1.
Described sensing circuit 3 is positioned at normal temperature environment, further amplifies and Integral Processing for the induced signal exported the amplifying unit 14 in described superconductive quantum interference sensory package 1.Wherein, described sensing circuit 3 comprises: the prime amplifier be connected with described amplifying unit 14, the integrating circuit be connected with described prime amplifier.
In sum, superconductive quantum interference sensory package of the present invention and the superconductive quantum interference sensor that is suitable for, amplifying unit is connected with tickler, amplifying unit effectively can be avoided the shunting of induced signal, and described induced signal is amplified; Meanwhile, by the lifting of voltage lift unit to the bias voltage of described superconducting quantum interference device, can effectively improve magnetic flux voltage transfer rate; In addition, select diode as voltage lift unit, electrical resistance environmental change can be avoided and the temperature drift that produces or the situation such as resistance is unstable; In addition, described amplifying unit adopts the field effect transistor of semiconductor material, effectively can reduce noise and resistance characteristic that device self produces under superconduction environment, further minimizing on the shunting action of induced signal and temperature on the impact of magnetic flux voltage transfer rate.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a superconductive quantum interference sensory package, is characterized in that, at least comprises:
The superconducting quantum interference device be connected with external bias supply;
With the tickler of described superconducting quantum interference device mutual inductance;
To be connected with tickler with described bias supply and induced signal for being exported by described tickler is amplified and the amplifying unit exported;
Connect with described superconducting quantum interference device and improve the voltage lift unit of the output voltage of described superconducting quantum interference device.
2. superconductive quantum interference sensory package according to claim 1, is characterized in that, described voltage lift unit is diode.
3. superconductive quantum interference sensory package according to claim 1, is characterized in that, the mutual inductance M between described tickler and described superconducting quantum interference device meets:
and convergence 1, wherein,
for the magnetic flux voltage transfer rate of described superconducting quantum interference device, g
mfor the mutual conductance of described amplifying unit.
4. superconductive quantum interference sensory package according to claim 3, is characterized in that, the induced signal that described superconducting quantum interference device is responded to is amplified by the tickler selected by described mutual inductance M.
5. superconductive quantum interference sensory package according to claim 1, it is characterized in that, described amplifying unit is field effect transistor, wherein, the source electrode of described field effect transistor is connected with described tickler, the grid of described field effect transistor is connected with described bias supply, and the drain electrode of described field effect transistor exports described induced signal.
6. superconductive quantum interference sensory package according to claim 5, is characterized in that, described field effect transistor is P junction field effect transistor or N junction field effect transistor.
7. superconductive quantum interference sensory package according to claim 6, is characterized in that, described field effect transistor is P junction field effect transistor, then the drain electrode of described field effect transistor is also by the external negative supply of resistance; Or described field effect transistor is N junction field effect transistor, then the drain electrode of described field effect transistor is also by the external positive supply of resistance.
8. superconductive quantum interference sensory package according to claim 1, is characterized in that, described sensory package is arranged in the container providing superconduction environment.
9. superconductive quantum interference sensory package according to claim 8, is characterized in that, described superconduction environment is the environment that temperature comprises that the liquid helium environment of 4.2K or temperature are the liquid nitrogen of 77K.
10. a superconductive quantum interference sensor, is characterized in that, at least comprises:
As the superconductive quantum interference sensory package as described in arbitrary in claim 1-9; And the sensing circuit to be connected with described superconductive quantum interference sensory package.
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