CN105223414B - A kind of microwave detector of high sensitivity - Google Patents
A kind of microwave detector of high sensitivity Download PDFInfo
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- CN105223414B CN105223414B CN201410273781.1A CN201410273781A CN105223414B CN 105223414 B CN105223414 B CN 105223414B CN 201410273781 A CN201410273781 A CN 201410273781A CN 105223414 B CN105223414 B CN 105223414B
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Abstract
The invention discloses a kind of microwave detectors of high sensitivity, including sequentially connected signal acquisition module, rectification module, signal detection module and signal display module, wherein the rectification module includes：With the magnetized fixed magnetic layer of in-plane equilibrium, the nonmagnetic spacer layers being formed on the fixed magnetic layer, and, it is formed in free magnetic layer on the nonmagnetic spacer layers, with perpendicular magnetocrystalline anisotropy.Microwave detector of the present invention has the characteristics that small size, high sensitivity, simple in structure, and preparation process is compatible with the prior art, is easy to be prepared on a large scale, and can be widely applied to the fields such as high-speed, multi-path communication, signal detection, microwave power transmission.
Description
Technical field
The present invention is more particularly directed to a kind of microwave detectors of high sensitivity, belong to microwave power detection technology field.
Background technology
Microwave detector is to be converted into direct current signal using by AC signal, carries out a kind of rectified current of microwave signal detection
Road system.There is extensive use in telecommunication, electronics industry, scientific research etc..In electronic communication system, often need
It detects the power of microwave signal or can whether there is or not as the standard that work normally.For example, would generally be right in radio receiver
The intensity for receiving signal measures, to adjust automatic gain control circuit, convenient for persistently obtaining the output of needs from receiver
Signal.Therefore microwave detector constitutes the core of signal amplitude measuring system.Schottky diode or PN are mainly used at present
Element of the junction diode as microwave detector.Opposite PN junction diode, recovery time of Schottky diode is short, forward voltage
It is low, therefore there is higher detectivity in very wide frequency range.
However, in fields such as space flight and aviation detection, experiment accurate measurements, need to examine very faint microwave signal
It surveys.The fields such as the recycling of low-power wireless sensor energy supply indoors, ambient radio-frequency and microwave radiation energy need to consider wide
Band, low-power microwave energy collection and conversion.Thus to the sensitivity of microwave detector, more stringent requirements are proposed.With Xiao
The microwave detector that special based diode is constituted, has been used widely in microwave power field of detecting, commercial Schottky two
The maximum sensitivity of pole pipe is 3800mV/mW.Although can be detected using extra small power meter made of low barrier Schottky diode
The power signal of 0.1 nanowatt grade, but its sensitivity seems insufficient.In addition, in field of telecommunications, realized to high speed under room temperature
The operation of multiplex communication generally requires highly sensitive microwave detecting element.Currently, using superconduction thermal radiometer
Highly sensitive microwave detection may be implemented in (superconducting bolometers), however this instrument limits at low temperature
It works.Signal detection is carried out using Schottky diode, high-frequency operation may be implemented at room temperature, but noise is relatively low.
Invention content
It is in the prior art to overcome the main purpose of the present invention is to provide a kind of microwave sounding device of high sensitivity
It is insufficient.
For achieving the above object, present invention employs following technical solutions：
A kind of microwave detector of high sensitivity, including sequentially connected signal acquisition module, rectification module, signal detection
Module and signal display module, wherein the rectification module includes：With the magnetized fixed magnetic layer of in-plane equilibrium, it is formed in
Nonmagnetic spacer layers on the fixed magnetic layer, and, be formed in it is on the nonmagnetic spacer layers, have perpendicular magnetic
The free magnetic layer of anisotropic crystalline.
Further, the free magnetic layer is mainly made of the ferrimagnet with perpendicular magnetocrystalline anisotropy.
Further, the detector further includes the biasing module being connect with the rectification module, particularly preferably to
The rectification module applies the biasing module of DC bias current.
Compared with prior art, the present invention at least has the following advantages that：
(1) traditional semiconductor microactuator wave detector is compared, microwave sounding device of the invention is in detection weak power microwave
In terms of signal, there is higher detectivity；
(2) microwave sounding device of the invention have size it is small, it is simple in structure, with conventional microelectronic process compatible, be easy to
It is prepared on a large scale, can be applied to the fields such as signal detection, microwave power transmission, the communication of high-speed, multi-path compound long-distance.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of microwave detector in a typical embodiments of the invention；
Fig. 2 is a kind of structural schematic diagram of rectification module in microwave detector in one embodiment of the invention；
Fig. 3 is that a kind of microwave of microwave detector under no external dc bias current conditions is rung in one embodiment of the invention
Answer curve；
Fig. 4 be in one embodiment of the invention a kind of microwave detector in the structural representation outside plus under the conditions of DC bias current
Figure；
Fig. 5 be in one embodiment of the invention a kind of microwave detector in the responding microwave outside plus under the conditions of DC bias current
Curve；
Fig. 6 is a kind of structural schematic diagram of rectification module in microwave detector in another embodiment of the present invention.
Specific implementation mode
In light of the shortcomings of the prior art, in order to obtain highly sensitive microwave detector, inventor through grinding for a long time
Study carefully and largely put into practice, devises a kind of magnetic multilayer film structure based on perpendicular magnetocrystalline anisotropy and the torque diode effect that spins
(spin torque diode effect) and the microwave detector realized, by signal acquisition module by microwave current signal
In a kind of guiding to magnetic multilayer film structure with perpendicular magnetocrystalline anisotropy, the multilayer film of this perpendicular magnetocrystalline anisotropy
Microwave power signal can be converted to d. c. voltage signal by structure, then by signal detection module, the energy generation that will be converted out
After the Parameters variation adjustment of apparent power variation, output signal is showed by signal display module, by observing pointer, finally
Achieve the purpose that interact with tester.Based on the microwave detector of this structure, realize sensitive more than 70000mV/mW
Degree.
In the typical embodiments of the present invention, referring to Fig. 1, the microwave detector of the high sensitivity is mainly by successively
Connection to collect the signal acquisition module of source signal, the rectification module to convert microwave signal, signal detection module and
Signal display module forms, wherein and the rectification module includes magnetic multilayer film structure, it includes：Magnetize with in-plane equilibrium
Fixed magnetic layer FM1 (its direction of magnetization is relatively fixed, thus again can referred to as " fixed bed "), be formed in the fixed magnetic layer it
On nonmagnetic spacer layers NM (referred to as " nonmagnetic layer " or " separation layer "), and, be formed on the nonmagnetic spacer layers
, free magnetic layer FM2 with perpendicular magnetocrystalline anisotropy (its direction of magnetization can change under small external magnetic field,
Referred to as " free layer ").
Further, the signal acquisition module includes signal amplifier or attenuator, to the microwave signal to input
It makes scaling up or decays.
Further, the free magnetic layer can be mainly made of the ferrimagnet with perpendicular magnetocrystalline anisotropy,
Its may be selected from but not limited in Fe, FeB, CoFeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni and TeFeCoAl any one or
It is a variety of.Further, non magnetic insulating layer of the thickness between 0.5nm~1.5nm can be selected in the nonmagnetic spacer layers, can be with
Meet have sufficiently large electric current can by magnetic tunnel junction or optional thickness 1.0~6.0nm nonmagnetic metal layer.
The lateral dimension of aforementioned magnetic multilayer film structure is preferably in 100nm or so.
Further, the signal detection module is mainly made of filter and amplifier, for that will represent changed power
Parameters variation adjustment after facilitate display.
Further, the signal display module includes oscillograph, the signal of output is presented.
Further, the detector may also include the biasing module being connect with the rectification module, the rectification module
One end is grounded, and the other end is connect with the signal acquisition module and signal detection module.
The microwave sounding device of the high sensitivity has the ability for detecting faint radiofrequency signal at room temperature.
One of exemplary embodiments as the present invention, the agent structure of the pinning type microwave sounding device of the high sensitivity can
With reference to figure 1, and wherein a kind of pinning type perpendicular magnetocrystalline anisotropy structure as shown in Figure 2, this knot can be used in rectification module
The antiferromagnetic bias between ferromagnetic layer and ferromagnetic exchange coupling is utilized in structure, can enhance magnetospheric coercive
Power is not easily susceptible to influence under conditions of externally-applied magnetic field.
Specifically, the pinning type perpendicular magnetocrystalline anisotropy structure includes buffer layer 5, it is formed in non-on buffer layer
Magnetic isolation layer 6, reference layer 7, magnetized ferromagnetic layer 1 (also known as " fixed bed ") together constitutes nail in 8 knead dough of inverse ferric magnetosphere
Layer 9 is pricked, the ferromagnetic layer 3 (also known as " free layer ") with perpendicular magnetocrystalline anisotropy, the separation layer 2 pressed from both sides between two magnetospheres,
And it is formed in the protective layer 4 on ferromagnetic layer 3.Ferromagnetic layer 3 with perpendicular magnetocrystalline anisotropy can be CoFeB,
The ferromagnetic films such as Fe, FeB, Co/Pt, Co/Pd, Co/Ni, Cu/Ni and TeFeCoAl or composite multilayer membrane.
In one more specifically case study on implementation, the structure of rectification module include PtMn (15nm, Laminate construction thickness, under
Together)/Co70Fe30(2.3nm)/Ru(0.85nm)/Co40Fe40B20(2.4nm)/MgO(0.8nm)/Co20Fe60B20(1.6nm)/Ta
(15nm).Wherein, the direction of magnetization of CoFeB is perpendicular to thin film planar, with the magnetization orientation of CoFe not external magnetic field condition
Under it is about in 90 °.
The responding microwave curve that system is measured using the circuit design of this microwave detector shown in Fig. 3 is please referred to again, it can
To see, which can detect faint signal, and high sensitivity reaches 934mV/mW.
And please refer to shown in Fig. 4, it is straight by applying if using this perpendicular magnetocrystalline anisotropy structure in rectification module
Stream bias current can further increase detectivity.Fig. 5 give outside plus DC bias current be 0.254mA when pair
The response curve of 0.01 μ W microwave signals, detectivity are up to 75400mV/mW, are detected than conventional semiconductors technology sensitive
Nearly 20 times of (3800mV/mW) height is spent, this has the technical effect that beyond expectation.
As shown in fig.6, another typical embodiments as the present invention, can also be devised in rectification module it is a kind of with
The different structure of foregoing embodiments, i.e., a kind of double freedom layer structure.The magnetism of the outer perpendicular magnetocrystalline anisotropy of upper and lower two level
Free layer 11 and 12 is formed in magnetized fixed bed 13 and 14 in two levels between free layer 11 and 12.Wherein free layer 11
It is separated respectively by three layers of nonmagnetic spacer layers 15,16 and 17 between 12, fixed bed 13 and 14.In this double freedom layer structure
In, using between two free layers dipole-dipole interaction and spin-transfer torque act on, be expected to improve spinning microwave detector
DC output voltage, and then obtain higher sensitivity.
In one more specifically case study on implementation, the free layer 11 and 12 of perpendicular magnetocrystalline anisotropy is respectively [Co
(0.5nm)/Pt(2nm)]4/ Co (0.6nm) and [Co (0.2nm) Ni (0.8nm)]8, double fixed beds 13 and 14 are respectively Co (4nm)
With Co (4nm), nonmagnetic spacer layers 5,6 and 7 therein are respectively Cu (2nm), Cu (4nm) and Cu (2nm).On it should be appreciated that
The technical concepts and features of preferred embodiment only to illustrate the invention are stated, its object is to allow person skilled in the art can
Understand present disclosure and implement according to this, it is not intended to limit the scope of the present invention.It is all real according to spirit of that invention
Equivalent change or modification made by matter, should be covered by the protection scope of the present invention.
Claims (8)
1. a kind of microwave detector of high sensitivity, including sequentially connected signal acquisition module, rectification module, signal detection mould
Block and signal display module, which is characterized in that the rectification module includes buffer layer, the pinning being sequentially distributed along direction initialization
Layer, the first nonmagnetic spacer layers, free magnetic layer and protective layer, the pinning layer include the anti-iron being sequentially distributed along direction initialization
Magnetosphere, reference layer, the second nonmagnetic spacer layers and fixed magnetic layer, the free magnetic layer are with perpendicular magnetocrystalline anisotropy
Ferromagnetic layer, the fixed magnetic layer be with the magnetized ferromagnetic layer of in-plane equilibrium；
Alternatively, the rectification module include the first free magnetic layer being sequentially distributed along direction initialization, third nonmagnetic spacer layers,
First fixed magnetic layer, the 4th nonmagnetic spacer layers, the second fixed magnetic layer, the 5th nonmagnetic spacer layers and the second magnetic free
Layer, wherein the first fixed magnetic layer and the second fixed magnetic layer magnetize with in-plane equilibrium, the first free magnetic layer and the second magnetic
Free love layer has perpendicular magnetocrystalline anisotropy.
2. the microwave detector of high sensitivity according to claim 1, which is characterized in that the signal acquisition module includes
The signal amplifier or attenuator for making scaling up or decaying to the microwave signal to input.
3. the microwave detector of high sensitivity according to claim 1, which is characterized in that the free magnetic layer is by having
The ferrimagnet of perpendicular magnetocrystalline anisotropy is constituted, the ferrimagnet be selected from Fe, FeB, CoFeB, Co/Pt, Co/Pd,
Any one in Co/Ni, Cu/Ni and TeFeCoAl or two or more combinations.
4. the microwave detector of high sensitivity according to claim 1, which is characterized in that the signal detection module is main
It is made of filter and amplifier.
5. the microwave detector of high sensitivity according to claim 1, which is characterized in that the signal display module includes
Oscillograph.
6. the microwave detector of high sensitivity according to claim 1, which is characterized in that the rectification module one terminates
Ground, the other end are connect with the signal acquisition module and signal detection module.
7. the highly sensitive microwave detector according to any one of claim 1-6, which is characterized in that the detector
It further include the biasing module being connect with the rectification module.
8. the highly sensitive microwave detector according to any one of claim 1-6, which is characterized in that the detector
Further include to apply the biasing module of DC bias current to the rectification module.
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| CN105796099A (en) * | 2016-03-08 | 2016-07-27 | 太原理工大学 | Radar type remote vital sign monitoring system based on self-rotating microwave detector |
| CN108242858A (en) * | 2016-12-27 | 2018-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of New-type radio-frequency microwave energy harvester based on electron spin attribute |
| CN109087995B (en) * | 2017-06-14 | 2021-04-13 | 中电海康集团有限公司 | Perpendicular magnetization MTJ device and STT-MRAM |
| CN110095141A (en) * | 2018-01-31 | 2019-08-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Radar type spinning microwave detector and its preparation method and application based on magnetic tunnel junction |
| CN113281574A (en) * | 2020-02-19 | 2021-08-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Microwave detection device |
| CN112187364B (en) * | 2020-09-29 | 2022-05-31 | 大连优迅科技股份有限公司 | High-speed broadband microwave detector module |
| US11751483B2 (en) | 2020-12-28 | 2023-09-05 | Globalfoundries Singapore Pte. Ltd. | Spin diode devices |
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| CN1284143C (en) * | 2004-04-15 | 2006-11-08 | 中国科学院物理研究所 | Resonance tunnel-through type magnetic tunnel tunnel junction component |
| FR2892871B1 (en) * | 2005-11-02 | 2007-11-23 | Commissariat Energie Atomique | SPEED POLARIZED ELELECTIC CURRENT FREQUENCY RADIO OSCILLATOR |
| JP2007207919A (en) * | 2006-01-31 | 2007-08-16 | Toshiba Corp | Magnetoresistance effect element and magnetic memory |
| JP2008066612A (en) * | 2006-09-11 | 2008-03-21 | Fujitsu Ltd | Tunnel magnetoresistance effect element and its manufacturing method |
| US8634231B2 (en) * | 2009-08-24 | 2014-01-21 | Qualcomm Incorporated | Magnetic tunnel junction structure |
| CN101685901B (en) * | 2008-09-24 | 2017-02-08 | 中国科学院物理研究所 | spin microwave oscillator and spin microwave detector |
| CN101527420B (en) * | 2009-04-13 | 2011-06-29 | 清华大学 | Current-driven symmetric magnetic multilayer-structure microwave oscillator |
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