CN101644748B - Giant magneto-impedance effect sensor with zigzag multi-turn structure - Google Patents
Giant magneto-impedance effect sensor with zigzag multi-turn structure Download PDFInfo
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- CN101644748B CN101644748B CN2009103075314A CN200910307531A CN101644748B CN 101644748 B CN101644748 B CN 101644748B CN 2009103075314 A CN2009103075314 A CN 2009103075314A CN 200910307531 A CN200910307531 A CN 200910307531A CN 101644748 B CN101644748 B CN 101644748B
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- multilayer film
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- 230000000694 effects Effects 0.000 title claims abstract description 13
- 230000005291 magnetic effect Effects 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 238000005259 measurement Methods 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 9
- 230000001419 dependent effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- Measuring Magnetic Variables (AREA)
Abstract
一种曲折多匝结构巨磁阻抗效应传感器，属于测量技术领域。本发明包括：带SiO2层的硅衬底、软磁多层膜和引脚，其中：软磁多层膜位于带SiO2层的硅衬底上，引脚的一端与软磁多层膜固定连接，另一端固定于带有SiO2层的硅衬底上，软磁多层膜为方波形的曲折多匝结构，其匝数为10匝，匝间距离为60μm，峰-峰值为5mm，所述引脚的个数为21个。本发明测量参数可调、磁场灵敏高度、阻抗变化率大、可应用于大面积非均匀磁场的探测。
A meandering multi-turn structure giant magneto-impedance effect sensor belongs to the field of measurement technology. The invention comprises: a silicon substrate with SiO2 layer, a soft magnetic multilayer film and pins, wherein: the soft magnetic multilayer film is located on the silicon substrate with SiO2 layer, one end of the pin is connected with the soft magnetic multilayer film Fixed connection, the other end is fixed on the silicon substrate with SiO 2 layer, the soft magnetic multilayer film is a square waveform with a meandering multi-turn structure, the number of turns is 10 turns, the distance between turns is 60μm, and the peak-to-peak value is 5mm , the number of pins is 21. The invention has adjustable measurement parameters, high magnetic field sensitivity, and large impedance change rate, and can be applied to the detection of large-area non-uniform magnetic fields.
Description
Technical field
What the present invention relates to is a kind of sensor of field of measuring technique, specifically is a kind of giant magneto-impedance effect sensor with zigzag multi-turn structure.
Background technology
Along with developing rapidly of microelectric technique, need in fields such as automotive electronics, Robotics, bioengineering, robotization controls that some are small-sized, high-performance, high sensitivity and the fast magneto-dependent sensor of response speed detect correlation parameter, as magnetic field, rotating speed, speed, displacement, angle, moment of torsion etc.Popular in the market several magneto-dependent sensors mainly contain Hall effect (Hall) sensor, anisotropy (AMR) magneto-dependent sensor and giant magnetoresistance (GMR) sensor.Hall effect (Hall) is though sensor is the magneto-dependent sensor that is most widely used at present, and a little less than its output signal, temperature stability is poor, and sensitivity is low; The change rate of magnetic reluctance size of anisotropy (AMR) magneto-dependent sensor has only 2%-4%, and its magnetic field sensitivity is less than 1%/Oe; Giant magnetoresistance (GMR) export can obtain higher signal, but its magnetic field sensitivity can only reach 1%-2%/Oe though the change rate of magnetic reluctance of sensor can reach more than 80%.
Discover that soft magnetic material can produce giant magnetoresistance effect under very little D.C. magnetic field effect, promptly the subtle change in magnetic field can cause soft magnetic material AC impedance great variety.Utilize soft magnetic material to make giant magneto-impedance effect sensor, its magnetic field sensitivity can reach 2%-300%/Oe, than the AMR sensor and high 1 to 2 order of magnitude of GMR sensor, be hall effect sensor 10-100 doubly, and giant magneto-impedance effect sensor also has advantages such as response speed is fast, volume is little, can be widely used in every field such as communications and transportation, control automatically, Aero-Space, bioengineering.
Through existing correlation technique retrieval is found, people such as Z.Zhou are in " IEEE TRANSACTION ONMAGNETICS " (IEEE magnetics transactions, 2008 44 phases: 2252-2254) delivered " Perpendicular GMI effect in meander NiFe and NiFe/Cu/NiFe film " (curved structure NiFe with NiFe/Cu/NiFe film in vertical GMI effect) literary composition, this article discloses a kind of curved structure NiFe/Cu/NiFe multilayer film giant magnetoresistance effect magnetic field sensor, this sensor is 3 circle curved structures, length is 4mm, NiFe and Cu layer width are respectively 700 and 400 μ m, the lines spacing is 100 μ m, the maximum resistance variation rate is 13.0%, this sensor live width and spacing are excessive, cause between lines the inductance coupling effect not strong, impedance rate of change is less, in addition, the angle of drawing of this sensor is 2, and the measurement performance parameter is unadjustable, and can't realize the detection of large tracts of land non-uniform magnetic-field.
Summary of the invention
The objective of the invention is to overcome the above-mentioned shortcoming that exists in the prior art, a kind of giant magneto-impedance effect sensor with zigzag multi-turn structure is provided, impedance rate of change height of the present invention, measurement parameter is adjustable, can be applied to the detection of large tracts of land non-uniform magnetic-field.
The present invention is achieved by the following technical solutions:
The present invention includes: band SiO
2Silicon substrate, soft-magnetic multilayer film and the pin of layer, wherein: soft-magnetic multilayer film is positioned at band SiO
2On the silicon substrate of layer, an end of pin is fixedlyed connected with soft-magnetic multilayer film, and the other end is fixed in and has SiO
2On the silicon substrate of layer, soft-magnetic multilayer film is the zigzag multi-turn structure of square waveform, and its number of turn is 10 circles, and the turn-to-turn distance is 60 μ m, and peak-to-peak value is 5mm, and the number of described pin is 21.
Described soft-magnetic multilayer film comprises: copper layer and soft magnetic film layer, and wherein: the copper layer is positioned at soft magnetic film layer inside, and the width of soft magnetic film layer is 200 μ m, and the width of copper layer 4 is 120 μ m.
Described pin is positioned at the upper/lower terminal of soft-magnetic multilayer film and fixedlys connected with the copper layer.
The soft magnetic film of described copper layer upside is identical with the soft magnetic film thickness of copper layer downside, is 1 μ m-3 μ m.
The thickness of described copper layer is 1 μ m-3 μ m.
Described soft magnetic film layer is made for the Ni-Fe composite material, and wherein the shared component ratio of Ni element is 82%.
Soft-magnetic multilayer film of the present invention adopts the square waveform curved structure of 10 circles, by the turn-to-turn distance is reduced to 60 μ m, has increased the inductance coupling effect of soft-magnetic multilayer film, has improved the impedance rate of change of sensor; The pin number is increased to 21, can be by changing the number of turn of the combinations of pairs adjusting soft-magnetic multilayer film between the different pins, and then the measurement parameter of adjusting sensor, as sensitivity and impedance rate of change etc., can also realize simultaneously a plurality of regional magnetic fields measurements of diverse location, make sensor can be applied to the detection of large tracts of land non-uniform magnetic-field.
Compared with prior art, the invention has the advantages that: measurement parameter is adjustable, the sensitive height in magnetic field, and impedance rate of change is big, can be applicable to the detection of large tracts of land non-uniform magnetic-field.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is a diagrammatic cross-section of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As depicted in figs. 1 and 2, present embodiment comprises: band SiO
2Silicon substrate 1, soft-magnetic multilayer film 2 and the pin 3 of layer, wherein: soft-magnetic multilayer film 2 is positioned at band SiO
2The layer silicon substrate on 1, an end of pin 3 is fixedlyed connected with soft-magnetic multilayer film 2, the other end is fixed in and has SiO
2On the silicon substrate 1 of layer, soft-magnetic multilayer film 2 is the zigzag multi-turn structure of square waveform, and its number of turn is 10 circles, and the turn-to-turn distance is 60 μ m, and peak-to-peak value is 5mm, and the number of pin 3 is 21.
Described soft-magnetic multilayer film 2 comprises: copper layer 4 and soft magnetic film layer 5, and wherein: copper layer 4 is positioned at soft magnetic film layer 5 inside, and the width of soft magnetic film layer 5 is 200 μ m, and the width of copper layer 4 is 120 μ m.
Described pin 3 is positioned at the upper/lower terminal of soft-magnetic multilayer film 2 and fixedlys connected with copper layer 4.
The thickness of described copper layer 4 is 2 μ m.
The soft magnetic film of described copper layer 4 upside is identical with the soft magnetic film thickness of copper layer 4 downside, is 2 μ m.
Described soft magnetic film layer 5 is made for the Ni-Fe composite material, and wherein the shared component ratio of Ni element is 82%.
The soft-magnetic multilayer film 2 of present embodiment adopts the square waveform curved structure of 10 circles, by the turn-to-turn distance is reduced to 60 μ m, improved giant magnetoresistance effect, impedance rate of change can reach 140%, maximum field sensitivity can reach 12%/Oe, far above the magnetic field sensitivity of AMR and GMR sensor; In addition, the number of pin 3 is increased to 21, by changing the combinations of pairs between the different pins 3, can regulate measurement parameter such as the sensitivity and the impedance rate of change etc. of sensor, can also realize simultaneously a plurality of regional magnetic fields measurements of diverse location, make sensor can be applied to the detection of large tracts of land non-uniform magnetic-field.
Claims (1)
1. a giant magneto-impedance effect sensor with zigzag multi-turn structure comprises: band SiO
2Silicon substrate, soft-magnetic multilayer film and the pin of layer, wherein: soft-magnetic multilayer film is the zigzag multi-turn structure of square waveform, and is positioned at band SiO
2On the silicon substrate of layer, an end of pin is fixedlyed connected with soft-magnetic multilayer film, and the other end is fixed in and has SiO
2On the silicon substrate of layer, it is characterized in that the number of turn of soft-magnetic multilayer film is 10 circles, the turn-to-turn distance is 60 μ m, peak-to-peak value is 5mm, the number of pin be 21 and divide two groups each 10 with 11 and lay respectively at the upper/lower terminal of soft-magnetic multilayer film and fixedly connected with the copper layer;
Described soft-magnetic multilayer film comprises: copper layer and soft magnetic film layer, wherein: the copper layer is positioned at soft magnetic film layer inside, the width of soft magnetic film layer is 200 μ m, the width of copper layer is 120 μ m, the soft magnetic film of described copper layer upside is identical with the soft magnetic film thickness of copper layer downside, and the thickness of described copper layer is 1 μ m-3 μ m;
Described soft magnetic film layer is made for the Ni-Fe composite material, and wherein the shared component ratio of Ni element is 82%.
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| CN2009103075314A CN101644748B (en) | 2009-09-23 | 2009-09-23 | Giant magneto-impedance effect sensor with zigzag multi-turn structure |
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| CN101644748B true CN101644748B (en) | 2011-08-31 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101975934B (en) * | 2010-09-27 | 2012-11-14 | 上海交通大学 | Integrated bias coil type giant magneto-impedance effect (GMI) magneto-dependent sensor |
| US11953567B2 (en) | 2020-09-08 | 2024-04-09 | Analog Devices International Unlimited Company | Magnetic multi-turn sensor and method of manufacture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889403A (en) * | 1995-03-31 | 1999-03-30 | Canon Denshi Kabushiki Kaisha | Magnetic detecting element utilizing magnetic impedance effect |
| CN1688035A (en) * | 2005-06-09 | 2005-10-26 | 上海交通大学 | Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889403A (en) * | 1995-03-31 | 1999-03-30 | Canon Denshi Kabushiki Kaisha | Magnetic detecting element utilizing magnetic impedance effect |
| CN1688035A (en) * | 2005-06-09 | 2005-10-26 | 上海交通大学 | Magnetosensitive device based on huge magneto impedance effect of micro mechanoelectric system |
Non-Patent Citations (6)
| Title |
|---|
| JP特开2004-264215A 2004.09.24 |
| JP特开2007-165682A 2007.06.28 |
| JP特开平6-196772A 1994.07.15 |
| M.A.Rivero et al..Influence of the sensor shape on permalloy/Cu/permalloy magnetoimpedance.《Journal of Magnetism and Magnetic Materials》.2003,第254-255卷第636-638页. * |
| Zhimin Zhou et al..The investigation of giant magnetoimpedance effect in meander NiFe/Cu/NiFe film.《Journal of Magnetism and Magnetic Materials》.2008,第320卷第e967-e970页. * |
| 陈吉安等.Cu层宽度对弯曲型三明治结构FeCuNbCrSiB/Cu/FeCuNbCrSiB多层膜应力阻抗效应的影响.《金属功能材料》.2005,第12卷(第3期),第9-12页. * |
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