CN201909632U - Micro electro mechanical system (MEMS) gyroscope - Google Patents
Micro electro mechanical system (MEMS) gyroscope Download PDFInfo
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- CN201909632U CN201909632U CN201020619527XU CN201020619527U CN201909632U CN 201909632 U CN201909632 U CN 201909632U CN 201020619527X U CN201020619527X U CN 201020619527XU CN 201020619527 U CN201020619527 U CN 201020619527U CN 201909632 U CN201909632 U CN 201909632U
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Abstract
The utility model relates to a micro electro mechanical system (MEMS) gyroscope. A mini heater and a temperature sensor are machined on a glass base by a minuteness machining technology, and the glass base is boned with a chip of an MEMS gyroscope structure. The voltage is applied to two ends of the mini heater to heat the chip of the MEMS gyroscope; and the temperature of the chip of the gyroscope is timely monitored by the integrated temperature sensor so as to drive a peripheral circuit to adjust the voltage at the end ends of the heater, so that the temperature of the chip of gyroscope is kept to be constant and slightly higher than the superior limit of the work environment work. The heater and the temperature sensor are integrated on the glass base, so that the gyroscope is small in volume and high in temperature sensitiveness. The chip-level temperature control method has the characteristics of being low in power dissipation, small in volume, high in applicability and good in repeatability, can be compatible with the minuteness machining technology, can realize the volume production, and also can be widely used for the chip level temperature control of the other MEMS chips.
Description
Technical field
The utility model belongs to MEMS (micro electro mechanical system) field (MEMS), relates in particular to a kind of MEMS gyroscope.
Background technology
The MEMS gyroscope is a kind of inertial sensor of typical Measuring Object rotational angular velocity.Along with improving constantly of MEMS gyroscope precision, the error that is caused by temperature variation has become one of gyrostatic main error of MEMS.Because variation of temperature can cause the change of the gyrostatic material properties of MEMS, size and quality factor etc., these changes all can make the gyrostatic performance of MEMS sharply descend.Therefore, proofread and correct the gyrostatic temperature error of MEMS and very important meaning is arranged for improving MEMS gyroscope performance.
The compensation and the bearing calibration of MEMS gyroscope temperature error are more, and at present commonly used has three kinds: first kind is to eliminate or suppress temperature error by improving the gyrostatic structure of MEMS.Breadboard Cenk Acar of California, USA university micro-system in 2003 and Andrei M.Shkel have proposed a kind of distributed mass formula silicon micro-gyroscope, this structure is spaced apart with certain frequency with a plurality of driving mode, increased the bandwidth that drives mode, thereby greatly reduced of the sensitivity of the mechanical gain of gyroscope to two mode frequency differences, promptly strengthened the antijamming capability of mechanical gain to temperature, but its structure and complex process, cost is higher, and architecture advances needs the model or the mechanism of clear and definite temperature error, so the structure of actual design only can be eliminated known a certain or several temperature errors.
Second method is to carry out temperature error compensation by hardware circuit or software algorithm.The Chen Huai of Tsing-Hua University, Zhang Rong etc. have proposed a kind of novel backoff algorithm that utilizes the phase place of driving mode as temperature sensor, utilize conic fitting to proofread and correct, 5% before the then temperature compensated gyrostatic temperature drift in back is reduced to and compensates to exporting the No. of believing one side only zero.Texas ,Usa A﹠amp; The Don G.Kim of M university utilizes fuzzy logic algorithm to proofread and correct nonlinear temperature offset of gyroscope and drift, has obtained effect preferably.But this mode need be based on great deal of experiment data, and is bigger to the real-Time Compensation difficulty of the Model Distinguish of these data and temperature error, and requires the output signal of silicon micro-gyroscope to have better repeatability.Present most of temperature error model is static model, and the dynamic temperature error model is set up difficulty, also feasible method without comparison.In addition, the realization of software algorithm will be based on the digital hardware platform of complexity, thereby the circuit volume is big, power consumption is high, at present can't be directly integrated with little gyro, and little with the silicon micro-gyroscope volume, low in energy consumption, the developing direction that integrated level is high does not conform to; And the hardware compensating circuit only can adopt low order polynomial expression compensation way, can't proofread and correct the drift error that is caused by thermograde, and compensation precision is limited.Simultaneously, be arranged in little gyro temperature sensor on every side and only can approximate reverse answer little gyro local temperature characteristic, temperature error is bigger, directly influences compensation effect.
The third method is to adopt certain hardware measure to make the gyrostatic operating ambient temperature of MEMS constant as far as possible, as thermoshield, temperature control etc.Temperature control technology is a kind of usual way that improves temperature drift in the traditional mechanical output from Gyroscope, conventional temperature control generally with whole gyroscope as the temperature control object, programming rate is slow, power consumption is big, inertia is big, the temperature of simultaneous temperature sensor measurement is the temperature of control point around the gyro or the temperature of a certain part of gyro, the temperature characterisitic that can not comprehensively reflect whole gyro structure truly, so accuracy of temperature control is limited, poor temperature uniformity, and general temperature control device and MEMS technology are incompatible, are unfavorable for little gyro miniaturization and integrated.
Summary of the invention
The purpose of this utility model provides a kind of novel, low in energy consumption, fast, highly sensitive, good reproducibility of response, the MEMS gyroscope of Highgrade integration and chip-scale temperature control method and job operation.Existing silicon micro-machining technology is carried out under the situation of bigger change need not, realize the gyrostatic chip-scale temperature control of simple and practical, high-efficiency reliable MEMS, so that accumulation of heat and variation of ambient temperature are to MEMS gyroscope Effect on Performance in elimination or the inhibition MEMS gyroscope chip, improve the many performance index relevant of MEMS gyroscope, satisfy the practical application active demand with temperature.
Realize that technical solution of the present utility model is as follows:
A kind of MEMS gyroscope comprises upper and lower two-layer; The upper strata is little gyro structure chip, and lower floor is a glass pedestal, and little gyro structure chip is bonded on the glass pedestal; Be manufactured with signal lead on the described glass pedestal, the electrode on little gyro structure chip is connected with corresponding signal lead.Be manufactured with microheater and temperature sensor on the described glass pedestal.
Described glass pedestal is provided with equal hotting mask.Described little gyro structure chip is produced on the monocrystalline silicon piece.Described micro-heater is two groups of nested serpentine configuration with temperature sensor, and be positioned at monocrystalline silicon piece under.Described micro-heater and temperature sensor adopt the Pt metal material.The material of described glass pedestal is a borosilicate Pyrex glass.
The gyrostatic chip-scale temperature control of a kind of MEMS method, the gyrostatic structure of described MEMS are to comprise upper and lower two-layer; The upper strata is little gyro structure chip, and lower floor is a glass pedestal, and little gyro structure chip is bonded on the glass pedestal; Be manufactured with signal lead on the described glass pedestal, the electrode on little gyro structure chip is connected with corresponding signal lead, it is characterized in that, microheater and temperature sensor are set on glass pedestal earlier; By microheater MEMS gyroscope chip is heated again, use the temperature of the real-time monitoring MEMS gyroscope chip of temperature sensor simultaneously; The duty of the adjustment microheater of the MEMS gyroscope chip that foundation monitors keeps the upper limit of the steady temperature of MEMS gyroscope chip a little more than operating ambient temperature.
Micro-heater on the glass pedestal adopts snakelike distribution mode, and design for temperature sensor is in the middle of well heater.Microheater adopts the sheet resistance of Ti/Pt alloy, and temperature sensor adopts the temperature sensor of Ti/Pt alloy.
A kind of MEMS gyroscope job operation comprises the steps:
1) coat photoresist on the silicon chip of polishing, carry out photoetching, the anchor point figure on the mask is moved on on the silicon chip, etch the anchor point figure again on silicon chip, electrostatic bonding is treated in the cleaning of removing photoresist;
2) light engraving erosion glass, sputtered with Ti-Au alloy utilizes stripping technology to make metal electrode in the above;
3) sputtered with Ti-Pt alloy on glass sheet utilizes stripping technology to make Pt well heater and Pt temperature sensor;
3) silicon slice pattern and glass pedestal top electrode pattern alignment electrostatic bonding;
4) with wafer thinning to required Laminate construction thickness, polishing;
5) in the photoetching of the back side of glass pedestal, the figure on the mask is moved on to the back side of glass pedestal, utilize wet processing that glass pedestal is lost deeply, obtain glass film;
6) at glass film back side groove sputter one deck Ti-Pt alloy;
7), the silicon structure figure on the mask is moved on to the silicon chip back side, and silicon chip is carried out deep etching release silicon gyro structure in the photoetching of the silicon chip back side.
The utility model compared with prior art, remarkable advantage: (1) can adopt fine process, technology realizes simple, is easy to integrated and array; (2) this temperature control technology is only at a certain microcosmic part, and the response time is very short; (3) integrated Metal Membrane Heater and temperature sensor is highly sensitive, good reproducibility; (4) the temperature control partial volume is small, and temperature inertia is less, and power consumption is also lower; (5) control temperature is controlled at the upper limit, only needs design Metal Membrane Heater and temperature sensor, omitted refrigerating plant, simplified structure a little more than environment for use.
Description of drawings
Fig. 1 is the gyrostatic synoptic diagram of this MEMS.
Fig. 2 is little gyro structure chip synoptic diagram.
Fig. 3 (a) and Fig. 3 (b) are respectively micro glass pedestal schematic top plan view and elevational schematic view.
Fig. 4 is the gyrostatic work flow synoptic diagram of this MEMS,
Step (a)---silicon chip photoetching anchor point;
Step (b)---silicon chip ICP etching forms anchor point;
Step (c)---glass light engraving erosion pitting;
Step (d)---splash-proofing sputtering metal on glass and stripping photoresist;
Step (e)---light engraving erosion glass, sputtered with Ti-Pt alloy is made Pt well heater and Pt temperature sensor;
Step (f)---silicon-glass electrostatic bonding;
Step (g)---wafer thinning, polishing;
Step (h)---in the photoetching of the back side of glass pedestal, glass pedestal is lost deeply, obtain groove;
Step (i)---at glass pedestal back side groove sputter one deck Ti-Pt alloy;
Step (j)---in the photoetching of the silicon chip back side, and silicon chip is carried out deep etching discharge silicon gyro structure.
This routine closed loop temperature control circuit block diagram of Fig. 5.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing and embodiment.
A kind of MEMS gyroscope that is integrated with microheater and temperature sensor, constitute by upper and lower two parts, upper part is the little gyro structure chip that is produced on the monocrystalline silicon piece, and lower floor is the glass pedestal that is manufactured with microheater and temperature sensor and signal lead.In order to allow the silicon structure part thermally equivalent of MEMS GYROCHIP, measure the silicon structure temperature simultaneously in real time, micro-heater adopts two groups of nested serpentine configuration with temperature sensor, and be positioned at silicon structure under; , good reproducibility highly sensitive in order to realize, micro-heater and temperature sensor adopt the Pt metal material.By apply voltage at the microheater two ends MEMS gyroscope chip is heated, utilize the real-time monitor gyro instrument chip of integrated temperature sensor temperature simultaneously, drive peripheral circuit and regulate the voltage at well heater two ends, keep the temperature constant of gyroscope chip and a little more than the upper limit of operating ambient temperature.The utility model utilizes silicon chip to have good little processing characteristics, heat conduction and heat dispersion, and Pyrex glass can little processing characteristics, solved with silicon and glass as the chip basal body material, integrated in the above processing microheater and the various technological processes of temperature sensor provide the implementation method of a kind of microminiaturization and integrated MEMS gyroscope chip-scale temperature control technology.
Manufacture method of the present utility model is to etch the anchor point figure on silicon chip, and electrostatic bonding is treated in the cleaning of removing photoresist; Etching glass, sputtered with Ti-Au alloy is made metal electrode in the above; Sputtered with Ti on glass sheet-Pt alloy is made Pt well heater and Pt temperature sensor; With silicon slice pattern and glass pedestal top electrode pattern alignment electrostatic bonding; With wafer thinning, polishing; In the photoetching of the back side of glass pedestal, glass pedestal is lost deeply, obtain glass film; Do equal hotting mask at glass film back spatter one deck Ti-Pt alloy; In the photoetching of the silicon chip back side, silicon chip is carried out deep etching discharge silicon gyro structure at last.
Specific to the temperature control method in this example, can realize the chip-scale thermostatic control of MEMS gyroscope and other MEMS device, be used for proofreading and correct the temperature error of devices such as MEMS gyroscope or isoperibol being provided.In conjunction with Fig. 1, this MEMS gyroscope that has a chip-scale attemperating unit is by two-layer composition up and down, and the upper strata is the MEMS gyroscope physical construction 1 that is produced on the monocrystalline silicon piece, and lower floor is a glass pedestal 2.MEMS gyroscope physical construction 1 mainly comprises drive electrode, drives structures such as sensitive electrode, sensitive electrode and mass.Glass pedestal 2 is mainly used in and supports MEMS gyroscope physical construction and various contact conductors are provided, and comprises contact conductor 3, miniature Pt well heater 4, miniature Pt temperature sensor 5 and the equal hotting mask 6 of Pt.Contact conductor 3 is mainly used in draws the various p-wires of gyro; Miniature Pt well heater 4 is mainly used in realizes evenly heating to the MEMS gyroscope; Miniature Pt temperature sensor 5 is mainly used in the temperature around the real-time responsive MEMS gyroscope, so that the heating power of adjusting miniature Pt well heater by follow-up closed-loop control in real time is with the realization thermostatic control; Equal hotting mask 6 major functions of Pt are to make the well heater environment temperature more even respectively.
This routine MEMS gyroscope as shown in Figure 2, mass 7 is by four elastic beam 14a, 14b, 14c, 14d and crossbeam 15a, 15b links to each other, this crossbeam 15a, 15b is by four elastic beam 13a, 13b, 13c, 13d and four anchor point 12a, 12b, 12c, 12d connects, broach on drive electrode 8a and the 8b respectively with crossbeam 15a and 15b on broach constitute to drive electric capacity, drive on sensitive electrode 9a and the 9b broach respectively with crossbeam 15a and 15b on broach constitute and drive sensitization capacitance, broach on sensitive electrode 10a and the 10b respectively with mass 7 on broach constitute one road sensitization capacitance, the broach on sensitive electrode 11a and the 11b respectively with mass 7 on broach constitute another road sensitization capacitance.On drive electrode 8a and 8b, apply the alternating voltage that has direct current biasing during the work of MEMS gyroscope, drive crossbeam 15a and 15b, crossbeam 15a and 15b drive 7 one of masses and move along driving direction by elastic beam 14a, 14b, 14c, 14d, the variable quantity that drives sensitization capacitance can be detected by driving sensitive electrode 9a and 9b, the drive displacement size of mass 7 can be obtained indirectly.When the angular velocity of vertical paper is imported, under the coriolis force effect, mass 7 will move along sensitive direction, cause the two-way sensitization capacitance to change, just can detect the sensitization capacitance variable quantity by sensitive electrode 10a, 10b, 11a, 11b, indirectly the angular velocity size that just can obtain to import.
Glass pedestal of the present utility model comprises contact conductor, silicon/glass bonding point, miniature Pt well heater, miniature Pt temperature sensor and the equal hotting mask of Pt as shown in Figure 3.Shown in accompanying drawing 3 (a), miniature Pt well heater 4 adopts serpentine configuration to be arranged symmetrically in the glass pedestal central area up and down, be in the MEMS gyroscope arrangement under so that the MEMS gyroscope is evenly heated, the lead-in wire of miniature Pt well heater 4 is drawn from left side 4a and 4b end.Miniature Pt temperature sensor 5 is nested in miniature Pt well heater 4 inside, so that better responsive MEMS gyro temperature variation, the Pt temperature sensor adopts laterally zygomorphic collapsed shape, and its lead-in wire is drawn from left side 5a and 5b end.The gyro contact conductor comprises gyro sensitive electrode lead-in wire 3a and 3b, and drive electrode lead-in wire 3c drives responsive lead-in wire 3d, public electrode lead-in wire 3e and ground lead-in wire 3f.Heat power consumption is big, reaction velocity waits defective slowly in order to reduce the bigger thermal capacitance of glass pedestal long-pending adding of causing, and the utility model utilizes the wet etching mode with the glass pedestal attenuate under the miniature Pt well heater, shown in accompanying drawing 3 (b); For miniature Pt well heater environment temperature is more evenly distributed, on the film of glass pedestal, deposit the equal hotting mask 6 of one deck Pt simultaneously.
The gyrostatic manufacturing process of MEMS that has a chip-scale attemperating unit of the present utility model as shown in Figure 4, comprise the following steps: at silicon chip back-etching anchor point, and there is the glass pedestal of contact conductor, miniature Pt well heater, miniature Pt temperature sensor and the equal hotting mask of Pt to aim at bonding with sputter, formation has the MEMS gyroscope of chip-scale attemperating unit, and concrete manufacture method is as follows:
1) on the silicon chip 1 of twin polishing, coats photoresist 16 and carry out photoetching, the anchor point figure on the mask is moved on on the silicon chip 1, as Fig. 4 (a);
2) etch anchor point 1a on silicon chip 1, electrostatic bonding is treated in the cleaning of removing photoresist, as Fig. 4 (b);
3) light engraving erosion glass 2 forms groove 2a, as Fig. 4 (c);
4) sputtered with Ti-Au alloy on groove 2a utilizes stripping technology to make metal electrode 3, as Fig. 4 (d);
5) sputtered with Ti-Pt alloy on glass sheet utilizes stripping technology to make Pt well heater 4 and Pt temperature sensor 5, as Fig. 4 (e)
6) silicon slice pattern 1 is aimed at electrostatic bonding with glass figure 2, constitutes the gyrostatic physical construction of MEMS, as Fig. 4 (f);
7) silicon chip 1 is thinned to required Laminate construction thickness, polishing is as Fig. 4 (g);
8) in the photoetching of the back side of glass pedestal 2, the figure on the mask is moved on to the back side of glass pedestal, utilize wet processing that glass pedestal is lost deeply, obtain glass film, as Fig. 4 (h);
9) at the equal hotting mask 6 of glass pedestal back side groove sputter one deck Ti-Pt alloy, as Fig. 4 (i);
10) in silicon chip 1 back side photoetching, the silicon structure figure on the mask is moved on to the silicon chip back side, and silicon chip is carried out deep etching release silicon gyro structure, as Fig. 4 (j).
The closed control circuit block diagram of chip-scale temperature control of the present utility model as shown in Figure 5, resistance 22,24,25 and micro temperature sensor resistance 23 constitute bridge diagrams, resistance 24 is connected back ground connection with 25, resistance 22 with meet dc offset voltage U after 23 are connected, electric bridge 22,23,24,25 are used for extracting the variation of the resistance 23 of micro temperature sensor, it is the temperature variation of temperature sensor, resistance 22 and 24 tie point 26 connect the positive input terminal of instrument amplifier 17, resistance 23 and 25 tie point 27 connect the negative input end of instrument amplifier 17, the input end of the output termination amplification filtering circuit 18 of instrument amplifier 17, the negative input end of the output termination comparer 19 of amplification filtering circuit 18 and with the positive input terminal V of comparer 19
RefMake comparisons, the input end of the output termination PID controller 20 of comparer 19, the output terminal of PID controller 20 is connected with the input end of power amplifier 21, and the output terminal of power amplifier 21 is connected with microheater resistance 28, the other end ground connection of microheater resistance 28.By the last temperature constant of above-mentioned closed control circuit control temperature sensor and a little more than the environment serviceability temperature, thereby realize the chip-scale temperature control.
Claims (6)
1. a MEMS gyroscope comprises upper and lower two-layer; The upper strata is little gyro structure chip, and lower floor is a glass pedestal, and little gyro structure chip is bonded on the glass pedestal; Be manufactured with signal lead on the described glass pedestal, the electrode on little gyro structure chip is connected with corresponding signal lead, it is characterized in that being manufactured with on the described glass pedestal microheater and temperature sensor.
2. MEMS gyroscope according to claim 1 is characterized in that described glass pedestal is provided with equal hotting mask.
3. MEMS gyroscope according to claim 1 and 2 is characterized in that described little gyro structure chip is produced on the monocrystalline silicon piece.
4. MEMS gyroscope according to claim 3 is characterized in that described micro-heater and temperature sensor are two groups of nested serpentine configuration, and be positioned at monocrystalline silicon piece under.
5. MEMS gyroscope according to claim 1 and 2 is characterized in that described micro-heater and temperature sensor adopt the Pt metal material.
6. MEMS gyroscope according to claim 1 and 2, the material that it is characterized in that described glass pedestal are borosilicate Pyrex glass.
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| CN201020619527XU CN201909632U (en) | 2010-11-23 | 2010-11-23 | Micro electro mechanical system (MEMS) gyroscope |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102621884A (en) * | 2012-01-12 | 2012-08-01 | 西北工业大学 | Six-order continuous band-pass sigma-delta closed-loop control circuit for MEMS (micro-electromechanical system) gyroscope |
| CN102707088A (en) * | 2012-05-28 | 2012-10-03 | 西北工业大学 | High-order continuous low-pass sigma-delta closed-loop control circuit of micro-mechanical accelerometer |
| CN103900548A (en) * | 2014-04-22 | 2014-07-02 | 东南大学 | Silicon micro full-decoupling dual-mass dual-line vibratory gyroscope |
| CN104236535A (en) * | 2014-09-04 | 2014-12-24 | 东南大学 | Dual-mass decoupling silicon microgyroscope based on flexible connection |
| GB2561404A (en) * | 2017-04-13 | 2018-10-17 | Cirrus Logic Int Semiconductor Ltd | MEMS Device |
| CN109596115A (en) * | 2018-12-17 | 2019-04-09 | 中国人民解放军国防科技大学 | Nested ring type vibration gyro nonlinear effect suppression method |
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2010
- 2010-11-23 CN CN201020619527XU patent/CN201909632U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102621884A (en) * | 2012-01-12 | 2012-08-01 | 西北工业大学 | Six-order continuous band-pass sigma-delta closed-loop control circuit for MEMS (micro-electromechanical system) gyroscope |
| CN102621884B (en) * | 2012-01-12 | 2013-10-09 | 西北工业大学 | Six-order continuous band-pass sigma-delta closed-loop control circuit for MEMS (micro-electromechanical system) gyroscope |
| CN102707088A (en) * | 2012-05-28 | 2012-10-03 | 西北工业大学 | High-order continuous low-pass sigma-delta closed-loop control circuit of micro-mechanical accelerometer |
| CN103900548A (en) * | 2014-04-22 | 2014-07-02 | 东南大学 | Silicon micro full-decoupling dual-mass dual-line vibratory gyroscope |
| CN103900548B (en) * | 2014-04-22 | 2017-02-01 | 东南大学 | Silicon micro full-decoupling dual-mass dual-line vibratory gyroscope |
| CN104236535A (en) * | 2014-09-04 | 2014-12-24 | 东南大学 | Dual-mass decoupling silicon microgyroscope based on flexible connection |
| CN104236535B (en) * | 2014-09-04 | 2017-01-18 | 东南大学 | Dual-mass decoupling silicon microgyroscope based on flexible connection |
| GB2561404A (en) * | 2017-04-13 | 2018-10-17 | Cirrus Logic Int Semiconductor Ltd | MEMS Device |
| CN109596115A (en) * | 2018-12-17 | 2019-04-09 | 中国人民解放军国防科技大学 | Nested ring type vibration gyro nonlinear effect suppression method |
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Granted publication date: 20110727 Termination date: 20121123 |