CN201898122U - Large-power transistor seat with solid packaging steel ring - Google Patents
Large-power transistor seat with solid packaging steel ring Download PDFInfo
- Publication number
- CN201898122U CN201898122U CN2010206436098U CN201020643609U CN201898122U CN 201898122 U CN201898122 U CN 201898122U CN 2010206436098 U CN2010206436098 U CN 2010206436098U CN 201020643609 U CN201020643609 U CN 201020643609U CN 201898122 U CN201898122 U CN 201898122U
- Authority
- CN
- China
- Prior art keywords
- base
- steel loop
- steel ring
- solid
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Installation Of Indoor Wiring (AREA)
Abstract
The utility model relates to a large-power transistor seat with a solid packaging steel ring, which comprises a shell, a packaging steel ring, and a transistor seat, wherein the packaging steel ring is bound between the shell and the transistor seat; and an L-shaped solid steel ring is selected as the packaging steel ring. As a U-shaped steel ring is changed into the L-shaped solid structure, the large-power transistor seat with the solid packaging steel ring can not generate superfluities after bonding, has the advantages of good welding and sealing performances, and low air leakage rate, improves the product yield, and has more stable reliability.
Description
Technical field
The utility model relates to a kind of electronic devices and components, particularly a kind of high-power crystal base.
Background technology
See also shown in Figure 1ly, what existing high-power crystal base encapsulation steel loop adopted is hollow U type structure steel loop 5, and U type structure steel loop 5 produces distortion and forms fifth wheels and go deep into transistor internal influence properties of product when encapsulation; Use U type structure steel loop 5 and encapsulate the shortcoming that causes product fifth wheel, leak rate height, sealing difference easily, influence product quality, rate of finished products is low, poor reliability.
The utility model content
The purpose of this utility model provides a kind of high-power crystal base that has solid encapsulation steel loop, to solve the problems of the technologies described above.
To achieve these goals, the utility model adopts following technical scheme:
A kind of high-power crystal base that has solid encapsulation steel loop comprises shell, encapsulation steel loop and base, and the pressure welding of described encapsulation steel loop is between described shell and base, and described encapsulation steel loop is the solid steel loop of L type.
Form annular seal space between described shell and the base; Described high-power crystal base also comprises lead-in wire, tube core, lead-tin sheets, subtracts the stress dead ring, insulating glass and pipe leg; Insulating glass is arranged at described subtracting between stress dead ring and the pipe leg; Described tin lead flake is arranged at described base top, described tube core is arranged on the described tin lead flake, and described base is provided with a through hole, and the described stress dead ring that subtracts is fixed in described through hole, described pipe leg one end extends described annular seal space, and the pipe leg other end connects tube core by lead-in wire.
Compared with prior art, a kind of high-power crystal base that has solid encapsulation steel loop of the utility model can not produce fifth wheel by changing U type structure steel loop into L type solid construction after the pressure welding, and welded seal is good, leak rate is low, improved the finished product rate, reliability is more stable.
Description of drawings
Fig. 1 is the structural representation of existing high-power crystal base;
Fig. 2 is a kind of structural representation that has the high-power crystal base of solid encapsulation steel loop of the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is done and to be described in further detail.
See also shown in Figure 2ly, a kind of high-power crystal base that has solid encapsulation steel loop of the utility model comprises shell 1, lead-in wire 2, tube core 3, lead-tin sheets 4, encapsulation steel loop 5, base 6, subtracts stress dead ring 7, insulating glass 8 and pipe leg 9.
Subtract filling glass powder between stress dead ring 7 and the pipe leg 9, subtracting between stress dead ring 7 and the pipe leg 9 through sintering circuit and forming insulating glass 8, behind sintering, subtract stress dead ring 7, insulating glass 8 and pipe leg 9 and form an integral body; Base 6 tops are provided with tin lead flake 4, lead-tin sheets 4 is provided with tube core 3, and base 6 is provided with a step through-hole, and the overall structure that stress dead ring 7, insulating glass 8 and pipe leg 9 form is fixed in this step through-hole, pipe leg 9 one ends stretch out base 6, and pipe leg 9 other ends connect tube core 3 by lead-in wire 2; Shell 1 is by encapsulating steel loop 5 pressure weldings on base 6, encapsulation steel loop 5 be the solid steel loop of L type, does not have fifth wheel after the pressure welding and gos deep into transistor inside and influence properties of product, uses that solid encapsulation steel loop 5 welded seals of this L type are good, leak rate is low, improved the finished product rate, reliability is more stable.
Claims (2)
1. high-power crystal base that has solid encapsulation steel loop, it is characterized in that: comprise shell (1), encapsulation steel loop (5) and base (6), described encapsulation steel loop (5) pressure welding is between described shell (1) and base (6), and described encapsulation steel loop (5) is the solid steel loop of L type.
2. a kind of according to claim 1 high-power crystal base that has solid encapsulation steel loop is characterized in that: form annular seal space between described shell (1) and the base (6); Described high-power crystal base also comprises lead-in wire (2), tube core (3), lead-tin sheets (4), subtracts stress dead ring (7), insulating glass (8) and pipe leg (9); Insulating glass (8) is arranged at described subtracting between stress dead ring (7) and the pipe leg (9); Described tin lead flake (4) is arranged at described base (6) top, described tube core (3) is arranged on the described tin lead flake (4), described base (6) is provided with a through hole, the described stress dead ring (7) that subtracts is fixed in described through hole, described pipe leg (9) one ends extend described annular seal space, and pipe leg (9) other end connects tube core (3) by lead-in wire (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206436098U CN201898122U (en) | 2010-12-06 | 2010-12-06 | Large-power transistor seat with solid packaging steel ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206436098U CN201898122U (en) | 2010-12-06 | 2010-12-06 | Large-power transistor seat with solid packaging steel ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201898122U true CN201898122U (en) | 2011-07-13 |
Family
ID=44256018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206436098U Expired - Fee Related CN201898122U (en) | 2010-12-06 | 2010-12-06 | Large-power transistor seat with solid packaging steel ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201898122U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569102A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Hermetic package method and structure of transistor base and transistor pin |
| CN105261571A (en) * | 2015-09-21 | 2016-01-20 | 北京新雷能科技股份有限公司 | Hybrid integrated circuit (HIC) package pin and substrate connection device and manufacturing method thereof |
-
2010
- 2010-12-06 CN CN2010206436098U patent/CN201898122U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569102A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Hermetic package method and structure of transistor base and transistor pin |
| CN105261571A (en) * | 2015-09-21 | 2016-01-20 | 北京新雷能科技股份有限公司 | Hybrid integrated circuit (HIC) package pin and substrate connection device and manufacturing method thereof |
| CN105261571B (en) * | 2015-09-21 | 2018-04-20 | 北京新雷能科技股份有限公司 | A kind of hydrid integrated circuit shell pin and base plate connecting device and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110713 Termination date: 20171206 |