CN201898131U - High-power transistor base with stress-relief insulating ring - Google Patents
High-power transistor base with stress-relief insulating ring Download PDFInfo
- Publication number
- CN201898131U CN201898131U CN 201020643612 CN201020643612U CN201898131U CN 201898131 U CN201898131 U CN 201898131U CN 201020643612 CN201020643612 CN 201020643612 CN 201020643612 U CN201020643612 U CN 201020643612U CN 201898131 U CN201898131 U CN 201898131U
- Authority
- CN
- China
- Prior art keywords
- stress
- base
- dead ring
- stepped hole
- insulating glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The utility model relates to a high-power transistor base with a stress-relief insulating ring. The high-power transistor seat comprises a tube holder, the stress-relief insulating ring, a piece of insulating glass and a tube leg, wherein the insulating glass is arranged between the stress-relief insulating ring and the tube leg; a stepped hole is formed on the tube holder; and the stress-relief insulating ring is fixed at the stepped hole. In the utility model, as the stepped hole added on the tube holder greatly reduces the contact surface of adjacent parts; and the stress-relief insulating ring with smaller coefficient of cold and heat expansion, which is added between the insulating glass and the tube holder, can relieve sudden change of expansion coefficients of both a non-metallic material and a metallic material and eliminate crack of the insulating glass, so that the product quality is improved.
Description
Technical field
The utility model relates to a kind of electronic devices and components, particularly a kind of high-power crystal base.
Background technology
See also shown in Figure 1, the insulating glass 8 of stationary pipes leg 9 directly is connected with base 6 in the existing high-power crystal base, because the cold and hot expansion coefficient difference between insulating glass 8 and the metal base 6 is bigger, be easy to generate the phenomenon that insulating glass 8 breaks aborning, the sealing property of product is damaged, influenced reliability of products.
The utility model content
The purpose of this utility model provides a kind of high-power crystal base that subtracts the stress dead ring that has, to solve the problems of the technologies described above.
To achieve these goals, the utility model adopts following technical scheme:
A kind of high-power crystal base that subtracts the stress dead ring that has, comprise base, subtract the stress dead ring, insulating glass and pipe leg, described insulating glass is arranged at described subtracting between stress dead ring and the pipe leg, described base is provided with a stepped hole, and the described stress dead ring that subtracts is fixed in described stepped hole place.
Described high-power crystal base also comprises shell, lead-in wire, tube core, lead-tin sheets and encapsulation steel loop; The pressure welding of described encapsulation steel loop forms annular seal space between described shell and the base between described shell and base, described encapsulation steel loop is the solid steel loop of L type; Described tin lead flake is arranged at described base top, and described tube core is arranged on the described tin lead flake, and described pipe leg one end extends described annular seal space by described stepped hole, and the pipe leg other end connects tube core by lead-in wire.
Compared with prior art, a kind of high-power crystal base that subtracts the stress dead ring that has of the utility model has at first increased a stepped hole on base, significantly reduced the contact surface of adjacent parts; Also between insulating glass and base, increased cold and hot coefficient of expansion less subtract the stress dead ring, can alleviate nonmetal and sudden changes two kinds of material coefficients of expansion of metal, eliminated the phenomenon that insulating glass breaks, improved product quality.
Description of drawings
Fig. 1 is the structural representation of existing high-power crystal base;
Fig. 2 is a kind of structural representation that has the high-power crystal base that subtracts the stress dead ring of the utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is done and to be described in further detail.
See also shown in Figure 2ly, the utility model is a kind of to be had the high-power crystal base that subtracts the stress dead ring and comprises shell 1, lead-in wire 2, tube core 3, lead-tin sheets 4, encapsulation steel loop 5, base 6, subtracts stress dead ring 7, insulating glass 8 and pipe leg 9.
Subtract filling glass powder between stress dead ring 7 and the pipe leg 9, subtracting between stress dead ring 7 and the pipe leg 9 through sintering circuit and forming insulating glass 8, behind sintering, subtract stress dead ring 7, insulating glass 8 and pipe leg 9 and form an integral body; Base 6 tops are provided with tin lead flake 4, lead-tin sheets 4 is provided with tube core 3, and base 6 is provided with a stepped hole, and the overall structure that stress dead ring 7, insulating glass 8 and pipe leg 9 form is fixed in this stepped hole, pipe leg 9 one ends stretch out base 6, and pipe leg 9 other ends connect tube core 3 by lead-in wire 2; Shell 1 is by encapsulating steel loop 5 pressure weldings on base 6, encapsulation steel loop 5 is the solid steel loop of L type, being not easy to produce fifth wheel during welding gos deep into transistor inside and influences properties of product, use that solid encapsulation steel loop 5 welded seals of this L type are good, leak rate is low, improved the finished product rate, reliability is more stable.
Claims (2)
1. one kind has the high-power crystal base that subtracts the stress dead ring, it is characterized in that: comprise base (6), subtract stress dead ring (7), insulating glass (8) and pipe leg (9), described insulating glass (8) is arranged at described subtracting between stress dead ring (7) and the pipe leg (9), described base (6) is provided with a stepped hole, and the described stress dead ring (7) that subtracts is fixed in described stepped hole place.
2. a kind of according to claim 1 high-power crystal base that subtracts the stress dead ring that has is characterized in that: described high-power crystal base also comprises shell (1), lead-in wire (2), tube core (3), lead-tin sheets (4) and encapsulation steel loop (5); Described encapsulation steel loop (5) pressure welding forms annular seal space between described shell (1) and the base (6) between described shell (1) and base (6), described encapsulation steel loop (5) is the solid steel loop of L type; Described tin lead flake (4) is arranged at described base (6) top, and described tube core (3) is arranged on the described tin lead flake (4), and described pipe leg (9) one ends extend described annular seal space by described stepped hole, and pipe leg (9) other end connects tube core (3) by lead-in wire (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020643612 CN201898131U (en) | 2010-12-06 | 2010-12-06 | High-power transistor base with stress-relief insulating ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020643612 CN201898131U (en) | 2010-12-06 | 2010-12-06 | High-power transistor base with stress-relief insulating ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201898131U true CN201898131U (en) | 2011-07-13 |
Family
ID=44256027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020643612 Expired - Fee Related CN201898131U (en) | 2010-12-06 | 2010-12-06 | High-power transistor base with stress-relief insulating ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201898131U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569102A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Hermetic package method and structure of transistor base and transistor pin |
| CN111354697A (en) * | 2020-04-21 | 2020-06-30 | 佛山市海协科技有限公司 | Semiconductor integrated circuit device |
| CN114375483A (en) * | 2020-03-18 | 2022-04-19 | 肖特（日本）株式会社 | Hermetic terminal and contact device using the same |
-
2010
- 2010-12-06 CN CN 201020643612 patent/CN201898131U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569102A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Hermetic package method and structure of transistor base and transistor pin |
| CN114375483A (en) * | 2020-03-18 | 2022-04-19 | 肖特（日本）株式会社 | Hermetic terminal and contact device using the same |
| CN111354697A (en) * | 2020-04-21 | 2020-06-30 | 佛山市海协科技有限公司 | Semiconductor integrated circuit device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110713 Termination date: 20171206 |