CN201887046U - Single-chip white light emitting diode based on sapphire substrate - Google Patents
Single-chip white light emitting diode based on sapphire substrate Download PDFInfo
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- CN201887046U CN201887046U CN2010206501398U CN201020650139U CN201887046U CN 201887046 U CN201887046 U CN 201887046U CN 2010206501398 U CN2010206501398 U CN 2010206501398U CN 201020650139 U CN201020650139 U CN 201020650139U CN 201887046 U CN201887046 U CN 201887046U
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- sapphire substrate
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Abstract
A single-chip white light emitting diode based on a sapphire substrate belongs to the technical field of semiconductor optoelectronics, and comprises an upper structure and a lower structure. The upper structure consists of an upper p-type electrode, a blue light emitting unit, a tunnel junction, a green light emitting unit, an upper n-type electrode and the sapphire substrate, or consists of a blue and green light p electrode, a blue and green light emitting unit, a blue and green light n electrode and the sapphire substrate. The lower structure consists of a lower n-type electrode, a red light emitting unit and a lower p-type electrode. The upper structure and the lower structure respectively grow on two sides of the sapphire substrate, chip bonding is not needed during manufacturing process, and a chip is welded on a cooling base made of silicon or other materials in a flip chip bonding manner after scribing. In the structure, by the aid of introduction of the sapphire substrate, light emitted from lateral walls is added, and light extraction efficiency and color rendering index are increased. The single-chip white light emitting diode is simple in manufacturing process, low in cost and fine in repeatability, and is applicable to batch production.
Description
Technical field
Single chip white light emitting diode (LED) based on Sapphire Substrate belongs to field of semiconductor photoelectron technique, relates to a kind of light-emitting diode.
Background technology
The implementation method of white light emitting diode mainly contains at present:
1. mix white light by blue light or each coloured light of the luminous back of ultraviolet light-emitting diode excitated fluorescent powder.Good, the good process repeatability of this method cost white light emitting diode color stability low, that obtain has become the mainstream technology that white light emitting diode prepares.But this type of white light emitting diode bypass visual angle is a polychrome, non-white; The fluorescent material conversion causes energy loss to cause luminous efficiency low, color rendering index low (CRI), and the degeneration of fluorescent material simultaneously can influence the life-span of white light emitting diode.Three kinds of single color LEDs of red, green, blue (RGB) or other color LEDs cooperate, and form multicore sheet white light emitting diode.Can realize the white light of different-colour by applying the luminous intensity that different power changes each monochromatic chip.But this method needs complicated drive circuit, encapsulation is difficult, cost is high, and the white light emitting diode resolution of realization is also relatively poor.
The manufacture method of general Single chip white light emitting diode is a growth AlGaInP ruddiness epitaxial wafer on the GaAs substrate, and with blue green light epitaxial wafer bonding, by grinding the GaAs substrate that attenuate and selective corrosion technology are removed extinction, the back makes electrode.This kind method complex process, little, the lack of homogeneity of especially low, the poor repeatability of bonding technology rate of finished products, and bonded layer transmissivity brings auxiliary voltage.Simultaneously, in the chip manufacturing process, remove the GaAs substrate and can produce noxious substance, harm environment and technological operation personnel's is healthy.
The utility model content
The purpose of this utility model is to provide the Single chip white light emitting diode based on Sapphire Substrate that a kind of technology is simple, luminous efficiency is high.
The utility model is a kind of Single chip white light emitting diode based on Sapphire Substrate, its structure is a structure shown in Figure 1, be followed successively by from top to bottom: the superstructure that upper strata p type electrode 1, blue-light-emitting unit 26, tunnel junction 9, green emitting unit 25, upper strata n type electrode 22 and Sapphire Substrate 15 constitute, the perhaps superstructure that constitutes by blue green light p-electrode 1, blue green light luminescence unit 36, blue green light n-electrode 35 and Sapphire Substrate 15; The understructure that constitutes by the n of lower floor type electrode 23, emitting red light unit 24 and the p of lower floor type electrode 21.Add electric current by giving between p type electrode and n type electrode, each unit sends the light of corresponding color simultaneously, directly obtains white light through mixing.
The utility model has adopted the ohmic contact layer 20 that is arranged in order, ruddiness p-limiting layer 19, ruddiness active layer 18, the emitting red light unit 24 that ruddiness n-limiting layer 17 and ruddiness resilient coating 16 constitute.
The utility model has adopted the green glow resilient coating 14 that is arranged in order, green glow DBR reflector 13, green glow n-limiting layer 12, the green emitting unit 25 that green glow active layer 11 and green glow p-limiting layer 10 constitute.
The utility model has adopted the blue light resilient coating 8 that is arranged in order, blue light DBR reflector 7, blue light n-limiting layer 6, blue active layer 5, blue light p-limiting layer 4, the blue-light-emitting unit 26 that blue light ohmic contact layer 3 and blue light current extending 2 constitute.
The utility model has adopted the blue green light resilient coating 34 that is arranged in order, blue green light DBR reflector 33, blue green light n-limiting layer 32, blue green light active layer 31, blue green light p-limiting layer 30, the blue-green luminescence unit 27 that blue green light ohmic contact layer 29 and blue green light current extending 28 constitute.
Red light unit can adopt distributed bragg reflector mirror or comprehensive speculum or reflecting electrode or metal material reflector in the utility model.
The shape of p type electrode in the utility model or n type electrode can be to insert other shapes such as finger-type, bar shaped, circle.
The structure of the active layer in the utility model in each luminescence unit is a PN junction, or the PIN knot, or double-heterostructure, or single quantum, or multi-quantum pit structure, or the multiple-active-region cascade structure, or the quantum dot light emitting structure.
The material of current extending can be other transparent conductive materials or current transfer special processing structures such as ITO, ZnO in the utility model.And the top of current extending can be introduced the structure that anti-reflection film, surface coarsening layer etc. can play anti-reflection effect to light.
Adopt sapphire to do substrate in the utility model, reduced the absorption of original GaAs substrate to ruddiness, technology is made simple, and Sapphire Substrate has increased the sidewall bright dipping.
With compare with the conventional white light light-emitting diode of blue light and ultraviolet excitation fluorescent material, light-emitting diode of the present utility model is the conversion of electric light, the luminous efficiency height, because material is a semi-conducting material, ratio is based on the reliability height of the device of fluorescent material, and the life-span is long, and colourity is true to nature.
Single chip white light emitting diode of the present utility model is several relatively independent luminous zone structures, and is superimposed on a substrate by epitaxial growth, and introduces a P+-N+ tunnel junction structure between indigo plant, green luminescence unit.Thus, from a pair of electronics of light-emitting diodes pipe electrode injection, the hole produces a plurality of different colours in the luminous zone photon, they not only directly obtain white light at mixing, and quantum efficiency of LED is improved greatly, under the situation that does not increase injection current, optical output power and brightness have been increased greatly.The introducing of tunnel junction has increased current expansion again, because the individual tunnel knot is very thin, has so just avoided the demand to thick current extending.
Single chip white light emitting diode of the present utility model is grow respectively on the two sides of Sapphire Substrate blue green light and ruddiness epitaxial structure, does not therefore need bonding technology, problems such as the transmissivity of having avoided bonded layer to bring is little, auxiliary voltage.In addition, Sapphire Substrate is strong than GaAs substrate light transmission, thermal conductivity good, nontoxic.
Description of drawings
Fig. 1: the structural representation of the utility model red, green, blue three unit Single chip white light emitting diodes;
Among the figure: 1, upper strata p type electrode, 2, the blue light current extending, 3, the blue light ohmic contact layer, 4, blue light p-limiting layer, 5, the blue light active layer, 6, blue light n-limiting layer, 7, blue light DBR reflector, 8, the blue light resilient coating, 9, tunnel junction, 10, green glow p-limiting layer, 11, the green glow active layer, 12, green glow n-limiting layer, 13, green glow DBR reflector, 14, the green glow resilient coating, 15, Sapphire Substrate, 16, the ruddiness resilient coating, 17, ruddiness n-limiting layer, 18, the ruddiness active layer, 19, ruddiness p-limiting layer, 20, the ruddiness ohmic contact layer, 21, the p of lower floor type electrode, 22, upper strata n type electrode, 23, the n of lower floor type electrode, 24, the emitting red light unit, 25, the green emitting unit, 26, the blue-light-emitting unit.
Fig. 2: the structural representation of red, bluish-green pair of unit Single chip white light emitting diode of the utility model;
Among the figure: 27, blue green light p-electrode, 28, the blue green light current extending, 29, the blue green light ohmic contact layer, 30, blue green light p-limiting layer, 31, the blue green light active layer, 32, blue green light n-limiting layer, 33, blue green light DBR reflector, 34, the blue green light resilient coating, 35, blue green light n-electrode, 36, the blue green light luminescence unit, 15, Sapphire Substrate, 16, the ruddiness resilient coating, 17, ruddiness n-limiting layer, 18, the ruddiness active layer, 19, ruddiness p-limiting layer, 20, the ruddiness ohmic contact layer, 21, the p of lower floor type electrode, 23, the n of lower floor type electrode, 24, the red light-emitting unit.
Fig. 3: the utility model Single chip white light emitting diode sketch:
1, upper strata p type electrode, 9, tunnel junction, 15, Sapphire Substrate, 21, the p of lower floor type electrode, 22, upper strata n type electrode, 23, the n of lower floor type electrode, 24, the emitting red light unit, 25, the green emitting unit, 26, the blue-light-emitting unit.
Fig. 4: the utility model Single chip white light emitting diode flip-chip bonded structure profile;
Among the figure: 1, upper strata p type electrode, 2, upper strata n type electrode, 3, the p of lower floor type reflecting electrode, 4, the n of lower floor type electrode, 5, the p-of lower floor electrode pressure welding district, 6, lower floor n-electrode pressure welding district, 7, the AuSn salient point, 8, upper strata p-electrode pressure welding district, 9, n-electrode pressure welding district, upper strata, 10, heat-radiating substrate.
Fig. 5: the utility model Single chip white light emitting diode flip-chip bonded structure vertical view;
Among the figure: 1, upper strata p type electrode, 2, upper strata n type electrode, 5, lower floor p-electrode pressure welding district, 6, lower floor n-electrode pressure welding district, 8, p-electrode pressure welding district, upper strata, 9, n-electrode pressure welding district, upper strata,
Embodiment
A kind of Single chip white light emitting diode based on Sapphire Substrate, its structure is a structure shown in Figure 3, be followed successively by from top to bottom: the superstructure that upper strata p type electrode 1, blue-light-emitting unit 26, tunnel junction 9, green emitting unit 25, upper strata n type electrode 22 and Sapphire Substrate 15 constitute, the perhaps superstructure that constitutes by blue green light p-electrode 1, blue green light luminescence unit 36, blue green light n-electrode 35 and Sapphire Substrate 15; The understructure that constitutes by the n of lower floor type electrode 23, emitting red light unit 24 and the p of lower floor type electrode 21.Add electric current by giving between p type electrode and n type electrode, each unit sends the light of corresponding color simultaneously, directly obtains white light through mixing.
Embodiment 1:
As shown in Figure 1, its preparation process is as follows:
1. n-GaN green glow resilient coating 14, AlInN/GaN green glow DBR reflector 13, n-InGaN green glow n-limiting layer 12, InGaN/GaN Multiple Quantum Well green glow active layer 11, p-AlGaN green glow p-limiting layer 10, n successively grow on Sapphire Substrate 15
++InGaN/P
++GaN tunnel junction 9, n-GaN blue light resilient coating 8, AlInN/GaN blue light DBR reflector 7, n-InGaN blue light n-limiting layer 6, InGaN/GaN Multiple Quantum Well blue light active layer 5, p-AlGaN blue light p-limiting layer 4, P
++GaNa blue light ohmic contact layer 3, ITO blue light current extending 2.
2.ICP etch mesa structure to n-GaN green glow resilient coating 15 places, etching gas is chlorine and argon gas.Evaporation or sputter upper strata n type electrode 22, upper strata p type electrode 1, the attenuate Sapphire Substrate is formed green emitting unit 25 and blue-light-emitting unit 26.
3. with MOVCD method on the reverse side of the Sapphire Substrate behind the attenuate, grow successively GaP ruddiness resilient coating 16, n-AlGaInP ruddiness n-limiting layer 17, Multiple Quantum Well (MQWs) ruddiness active layer 18, p-AlGaInP ruddiness p-limiting layer 19, n type ruddiness ohmic contact layer 20, then by photoetching and evaporation of corrosion back or the p of sputter lower floor type electrode 21, the n of lower floor type electrode 23, wherein p type electrode is a reflecting electrode.
Embodiment 2:
As shown in Figure 2, its preparation process is as follows:
1. n-GaN blue green light resilient coating 34, AlInN/GaN blue green light DBR reflector 33, n-In successively grow on Sapphire Substrate 15
0.1Ga
0.9N blue green light n-limiting layer 32, In
0.2Ga
0.8N/GaN Multiple Quantum Well blue green light active layer 31, p-AlGaN blue green light p-limiting layer 30, P
++GaN blue green light ohmic contact layer 29, ITO blue green light current extending 28.
2.ICP etch mesa structure to n-GaN blue green light resilient coating 34 places, evaporation or sputter blue green light n-electrode 35, blue green light p-electrode 27, the attenuate Sapphire Substrate is formed blue-green luminescence unit 36.
3. with MOVCD method on the reverse side of the Sapphire Substrate behind the attenuate, grow successively GaP ruddiness resilient coating 16, n-AlGaInP ruddiness n-limiting layer 17, Multiple Quantum Well (MQWs) ruddiness active layer 18, p-AlGaInP ruddiness p-limiting layer 19, n type GaP ruddiness ohmic contact layer 20, then by photoetching and evaporation of corrosion back or the p of sputter lower floor type electrode 21, the n of lower floor type electrode 23, wherein p type electrode is a reflecting electrode.
Embodiment 3:
The flip-chip bonded structure of the utility model Single chip white light emitting diode such as Fig. 4, its manufacture process is as follows:
After the led chip structure growth finishes, the semi-conducting material that uses silicon chip or other perfect heat-dissipatings is as heat-radiating substrate 10, utilize the metal multilayer films such as mode depositing Al/Ti/Ag of thermal evaporation, sputter or plating subsequently on heat-radiating substrate 10, this metal film forms p-electrode pressure welding district, upper strata 8, n-electrode pressure welding district, upper strata 9, lower floor p-electrode pressure welding district 5, lower floor n-electrode pressure welding district 6 after photoetching, corrosion.Make AuSn salient point 7 in the electrode pressure welding district, with the flip chip bonding method n-electrode pressure welding district, upper strata 9, p-electrode pressure welding district, upper strata 8 on the lower floor n-electrode pressure welding district 6 on the n of lower floor type electrode 4, the p of lower floor type electrode 3 and the heat-radiating substrate of LED, lower floor's p-upper strata n type electrode 2, upper strata p type electrode 1 and the heat-radiating substrate 10 are bonded together at last.Thus, constitute the Single chip white light emitting diode of a flip-chip bonded structure.
Fig. 5 is the vertical view of flip-chip bonded structure, between lower floor n-electrode pressure welding district 6 and lower floor p-electrode pressure welding district 5, add the optical parameter that driving can be regulated red light unit, between n-electrode pressure welding district, upper strata 9 and p-electrode pressure welding district, upper strata 8, add the optical parameter that driving can be regulated the blue green light unit, realize full-color output.If will be the upper electrode and the lower electrode parallel connection of example 3, can unify to control the luminous parameters of each unit, thereby realize white light output, than the Single chip white light emitting diode of original GaAs substrate.
More than 3 examples of implementation light efficiencies and color rendering index all increase, wherein light efficiency can improve about 20%-25%, wherein color rendering index can improve about 20%-30%.
Claims (8)
1. Single chip white light emitting diode based on Sapphire Substrate, it is characterized in that, its structure comprises the superstructure that is made of upper strata p type electrode (1), blue-light-emitting unit (26), tunnel junction (9), green emitting unit (25), upper strata n type electrode (22) and Sapphire Substrate (15) from top to bottom successively, perhaps the superstructure that is made of blue green light p-electrode (27), blue green light luminescence unit (36), blue green light n-electrode (35) and Sapphire Substrate (15); The understructure that is made of the n of lower floor type electrode (23), emitting red light unit (24) and the p of lower floor type electrode (21) is with epitaxy method grow respectively on the two sides of same Sapphire Substrate above-mentioned superstructure and understructure.
2. a kind of Single chip white light emitting diode according to claim 1 based on Sapphire Substrate, it is characterized in that, adopted the ruddiness ohmic contact layer (20) that is arranged in order, ruddiness p-limiting layer (19), ruddiness active layer (18), the emitting red light unit (24) that ruddiness n-limiting layer (17) and ruddiness resilient coating (16) constitute.
3. a kind of Single chip white light emitting diode according to claim 1 based on Sapphire Substrate, it is characterized in that, adopted the green glow resilient coating (14) that is arranged in order, green glow DBR reflector (13), green glow n-limiting layer (12), the green emitting unit (25) that green glow active layer (11) and green glow p-limiting layer (10) constitute.
4. a kind of Single chip white light emitting diode according to claim 1 based on Sapphire Substrate, it is characterized in that, adopted the blue light resilient coating (8) that is arranged in order, blue light DBR reflector (7), blue light n-limiting layer (6), blue active layer (5), blue light p-limiting layer (4), the blue-light-emitting unit (26) that blue light ohmic contact layer (3) and blue light current extending (2) constitute.
5. according to a kind of Single chip white light emitting diode described in the claim 1 based on Sapphire Substrate, it is characterized in that, adopted the blue green light resilient coating (34) that is arranged in order, blue green light DBR reflector (33), blue green light n-limiting layer (32), blue green light active layer (31), blue green light p-limiting layer (30), the blue-green luminescence unit (27) that blue green light ohmic contact layer (29) and blue green light current extending (28) constitute.
6. according to a kind of Single chip white light emitting diode based on Sapphire Substrate described in the claim 1, what it is characterized in that described p type electrode or n type electrode is shaped as slotting finger-type or bar shaped or circle.
7. according to claim 4 or 5 described a kind of Single chip white light emitting diodes, it is characterized in that, on current extending, introduce anti-reflection film, surface coarsening layer or photonic crystal based on Sapphire Substrate.
8. according to claim 2 or 3 described a kind of Single chip white light emitting diodes based on Sapphire Substrate, it is characterized in that, the structure of the active layer in described each luminescence unit is a PN junction, or PIN knot, or double-heterostructure, or single quantum, or multi-quantum pit structure, or multiple-active-region cascade structure, or quantum dot light emitting structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985801A (en) * | 2013-02-08 | 2014-08-13 | 晶元光电股份有限公司 | Light-emitting device |
| CN109786517A (en) * | 2019-01-25 | 2019-05-21 | 京东方科技集团股份有限公司 | Light emitting structure, light emitting diode and preparation method thereof |
-
2010
- 2010-12-03 CN CN2010206501398U patent/CN201887046U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985801A (en) * | 2013-02-08 | 2014-08-13 | 晶元光电股份有限公司 | Light-emitting device |
| CN109786517A (en) * | 2019-01-25 | 2019-05-21 | 京东方科技集团股份有限公司 | Light emitting structure, light emitting diode and preparation method thereof |
| CN109786517B (en) * | 2019-01-25 | 2020-05-15 | 京东方科技集团股份有限公司 | Light-emitting structure, light-emitting diode and preparation method thereof |
| US11411134B2 (en) | 2019-01-25 | 2022-08-09 | Beijing Display Technology Co., Ltd. | Light emitting apparatus, method of fabricating light emitting apparatus, and method of emitting light using light emitting apparatus thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110629 Termination date: 20131203 |