CN201877435U - Silicon bilateral transient voltage suppression diode - Google Patents
Silicon bilateral transient voltage suppression diode Download PDFInfo
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- CN201877435U CN201877435U CN2010206440426U CN201020644042U CN201877435U CN 201877435 U CN201877435 U CN 201877435U CN 2010206440426 U CN2010206440426 U CN 2010206440426U CN 201020644042 U CN201020644042 U CN 201020644042U CN 201877435 U CN201877435 U CN 201877435U
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- transient voltage
- diode
- voltage suppression
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- suppression diode
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Abstract
The utility model discloses a silicon bilateral transient voltage suppression diode, which comprises a diode casing (1), wherein a chip (2) is arranged in the diode casing (1); one N region of the chip (2) is directly connected with an A pole (3); and the other N region of the chip (2) is connected with a B pole (5) through a connecting piece (4). By adopting the surface-mounted package, the diode disclosed by the utility model has the characteristics of small size, light weight, high transient absorbing power and high reliability. With the development of a military hardware system towards miniaturized and intelligent directions, the surface-mounted transient voltage suppression diode with smaller size and grater convenience for installation has a better development prospect; in addition, by adopting an advanced parallel seam welding package technology in the research process, the inside atmosphere of the silicon bilateral transient voltage suppression diode can be controlled to a lower level and the service life of the silicon bilateral transient voltage suppression diode can be well improved; and the silicon bilateral transient voltage suppression diode has higher reliability.
Description
Technical field
The utility model relates to a kind of silicon bidirectional transient voltage and suppresses diode, belongs to the semiconductor diode manufacture technology field.
Background technology
It is a kind of dynamical circuit brake that transient voltage suppresses diode.In recent years, Aeronautics and Astronautics develops towards miniaturization with electronic devices and components, original metallic packaging, glassivation encapsulation transient voltage suppress diode and can not meet the demands, require to have the littler transient voltage of volume to suppress diode to satisfy the requirement of electronics miniaturization.
Summary of the invention
The purpose of this utility model is, provides a kind of silicon bidirectional transient voltage to suppress diode, dwindling volume that the silicon bidirectional transient voltage suppresses diode, to be convenient to project installation, thereby overcomes the deficiencies in the prior art.
The technical solution of the utility model is to constitute like this: a kind of silicon bidirectional transient voltage of the present utility model suppresses diode, comprise shell, be provided with chip in the shell, a N district of chip directly is connected with the A utmost point, and another N district of chip is connected with the B utmost point through brace.
Aforesaid silicon bidirectional transient voltage suppresses to be equipped with insulator between the described shell and the A utmost point and the B utmost point in the diode, also is provided with insulator between the A utmost point and the B utmost point.
Aforesaid silicon bidirectional transient voltage suppresses in the diode, and described shell is provided with cover plate.
Compared with prior art, the utility model adopts SMD encapsulation, has that volume is little, in light weight, transient absorption power reaches high reliability features greatly.Along with the weaponry system develops towards miniaturization, intelligent direction, having more, small size has the better development prospect with the Surface Mount class transient voltage inhibition diode of being more convenient for installing; And this device has adopted FA parallel seam welding encapsulation technology in development process, makes device inside atmosphere can be controlled at lower level, well the useful life of the device that promotes, has better reliability.
Description of drawings
Fig. 1 is the structural representation of the utility model chip:
Fig. 2 is an encapsulating structure schematic diagram of the present utility model.
Being labeled as in the accompanying drawing: 1-shell, 2-chip, the 3-A utmost point, 4-brace, the 5-B utmost point, 6-insulator, 7-cover plate.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples, but not as to any restriction of the present utility model.
Embodiment of the present utility model: a kind of silicon bidirectional transient voltage of the present utility model suppresses diode, its structural representation as depicted in figs. 1 and 2, this silicon bidirectional transient voltage suppresses diode and comprises shell 1, during making, in shell 1, be provided with chip 2, a N district of chip 2 directly is connected with the A utmost point 3, and another N district of chip 1 is connected with the B utmost point 5 through brace 4; Between shell 1 and the A utmost point 3 and the B utmost point 5, be equipped with insulator 6, between the A utmost point and the B utmost point, also be provided with insulator 6; And then install cover plate 7 on the shell 1.
The manufacture method that a kind of silicon bidirectional transient voltage of the present utility model suppresses diode is to diffuse out two N districts on P type silicon chip two sides, at two N district plating nickel on surface, get the regular hexagon chip after the scribing, in shell, extraction electrode gets the silicon bidirectional transient voltage and suppresses diode with Chip Packaging.Described diffusion adopts the diffusion mesa technique to carry out phosphorous diffusion.Described P type silicon chip is a P type dislocation-free silicon single crystal flake, and resistivity is between 0.09～0.15 Ω .cm, and thickness is between 290～310 μ m.Described N district thickness is between 40～50 μ m.Nickel plating behind the described N district surface sand-blasting.Described orthohexagonal drift angle is 3mm.SMD encapsulation is adopted in described encapsulation.
It is the SY023 type that silicon bidirectional transient voltage of the present utility model suppresses the diode model; belong to transient voltage protector; doing overvoltage protection in complete machine uses; its technical requirement transient absorption power is big, reverse leakage current is little; profile need adopt YE0-01A(SMD-0.5) SMD encapsulation; its overall dimension is less, comprehensive products characteristics and our factory practical condition, and we have adopted diffusion technology to make PN junction.This device is a bilateral device, requires puncture voltage V
(BR)
: 37V～40.3V, voltage coherence request height, reverse leakage current I
R
≤ 3 μ A, I
P
=9.9A, V
C
≤ 53.3V.
The characteristics of Transient Voltage Suppressor are under the applied in reverse condition of regulation; when bearing a high-octane instantaneous overvoltage pulse; its working impedance can be reduced to very low conduction value immediately; allow big electric current to pass through; and with voltage clamping to predeterminated level, thereby protect the precision components in the electronic circuit to avoid damaging effectively.According to the characteristics of device, must consider the absorption problem of instantaneous macro-energy during design.After the component pipe core size was selected, how reducing transient thermal resistance was the key that improves device transient pulse power.
According to the transient thermal resistance formula:
Wherein:
In the formula: Rth---steady state heat resistance;
T---the operating time;
K---thermal conductivity;
CP---specific heat;
W---material thickness;
ρ---density of material.
From the transient thermal resistance formula as can be known, after material was determined, τ increased, and RTS reduces, and the heat that produces during work is little, and temperature is low.That is to say that its transient absorption power is big, and as seen τ ∝ W2, increases material thickness (or volume) and can reduce RTS greatly, makes device can bear big transient pulse power.
For the Si tube core, when sheet is thick when being 400 μ m, can not satisfy the absorption of bidirectional transient voltage suppressor to instantaneous macro-energy, for this reason, must increase the thermal time constant τ of its device inside structure.According to the concrete condition in the our factory actual production process, consider that copper has certain thermal capacity and the feasibility on processing technology, so adopt copper as the material that improves thermal time constant τ, to satisfy instantaneous high-octane impact.According to the making experience of above-mentioned analysis, calculating, the similar device of reference, we are as follows to the structural design of device: tube core adopts mesa technique to make, and selects for use certain thickness copper to make electrode material, adopts the slicker solder silver alloy as welding material.
Take all factors into consideration the requirement of the electrical quantity and the packing forms of product, it is the most suitable to adopt the diffusion mesa technique to carry out chip trial-production, and the specific design scheme of product is as follows:
Select according to Theoretical Calculation and practical experience, the SY023 product is selected P type dislocation-free monocrystalline silicon sheet for use, resistivity (0.09～0.15) Ω .cm, material thickness (300 ± 10) μ m.
The SY023 tube core structure as shown in Figure 1, on the technology, at first phosphorous diffusion is carried out on the silicon chip two sides, junction depth is controlled at (45 ± 5) μ m, obtain the two-way PN junction of comparatively ideal N+PN+, carry out nickel plating after the sandblast, carry out scribing at last, in order to satisfy the requirement of product transient power, this product chips size is decided to be the 3mm regular hexagon.
SY023 silicon bidirectional transient voltage suppresses the diode cross-section structure and sees Fig. 2: comprise shell 1, be provided with chip 2 in the shell 1, a N district of chip 2 directly is connected with the A utmost point 3, and another N district of chip 1 is connected with the B utmost point 5 through brace 4.Be equipped with insulator 6 between the described shell 1 and the A utmost point 3 and the B utmost point 5, also be provided with insulator 6 between the A utmost point and the B utmost point.Described shell 1 is provided with cover plate 7.
Owing to adopted method of the present utility model and structure, SY023 silicon bilateral transient voltage suppression diode of the present utility model adopts paster type encapsulation, has that volume is little, in light weight, transient absorption power reaches greatly the high characteristics of reliability. Along with the weaponry system develops towards miniaturization, intelligent direction, having more, small size has better development prospect with the Surface Mount class transient voltage suppressor diode of being more convenient for installing; And this device has adopted FA parallel seam welding encapsulation technology in development process, so that device inside atmosphere can be controlled at lower level, in the service life of the device that well promotes, has better reliability.
Claims (3)
1. a silicon bidirectional transient voltage suppresses diode, comprise shell (1), it is characterized in that: be provided with chip (2) in shell (1), a N district of chip (2) directly is connected with the A utmost point (3), and another N district of chip (2) is connected with the B utmost point (5) through brace (4).
2. silicon bidirectional transient voltage according to claim 1 suppresses diode, it is characterized in that: be equipped with insulator (6) between the described shell (1) and the A utmost point (3) and the B utmost point (5), also be provided with insulator (6) between the A utmost point and the B utmost point.
3. silicon bidirectional transient voltage according to claim 1 suppresses diode, and it is characterized in that: described shell (1) is provided with cover plate (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206440426U CN201877435U (en) | 2010-12-07 | 2010-12-07 | Silicon bilateral transient voltage suppression diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206440426U CN201877435U (en) | 2010-12-07 | 2010-12-07 | Silicon bilateral transient voltage suppression diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201877435U true CN201877435U (en) | 2011-06-22 |
Family
ID=44165345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206440426U Expired - Fee Related CN201877435U (en) | 2010-12-07 | 2010-12-07 | Silicon bilateral transient voltage suppression diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201877435U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022147A (en) * | 2014-06-09 | 2014-09-03 | 苏州市职业大学 | Semiconductor device with function of restraining transient voltage |
| CN113314616A (en) * | 2021-06-08 | 2021-08-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Bidirectional conduction EDS diode chip and manufacturing method thereof |
-
2010
- 2010-12-07 CN CN2010206440426U patent/CN201877435U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022147A (en) * | 2014-06-09 | 2014-09-03 | 苏州市职业大学 | Semiconductor device with function of restraining transient voltage |
| CN104022147B (en) * | 2014-06-09 | 2017-05-24 | 苏州市职业大学 | Semiconductor device with function of restraining transient voltage |
| CN113314616A (en) * | 2021-06-08 | 2021-08-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Bidirectional conduction EDS diode chip and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110622 Termination date: 20181207 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |