CN201864776U - Hanging hook of flat plate PECVD (plasma-enhanced chemical vapor deposition) device - Google Patents
Hanging hook of flat plate PECVD (plasma-enhanced chemical vapor deposition) device Download PDFInfo
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- CN201864776U CN201864776U CN2010206130805U CN201020613080U CN201864776U CN 201864776 U CN201864776 U CN 201864776U CN 2010206130805 U CN2010206130805 U CN 2010206130805U CN 201020613080 U CN201020613080 U CN 201020613080U CN 201864776 U CN201864776 U CN 201864776U
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- clamping wall
- hanger bulk
- clamping
- hook
- bill
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Abstract
The embodiment of the utility model discloses a hanging hook of a flat plate PECVD (plasma-enhanced chemical vapor deposition) device used for supporting a silicon wafer. The hanging hook comprises a clamping part, a first hanging hook body and a second hanging hook body, wherein the clamping part comprises a first clamping wall and a second clamping wall which are oppositely arranged and form a clamping groove; the first hanging hook body and the second hanging hook body are arranged at the two ends of the bottom side of the clamping part; the connecting part of the first hanging hook body, which is connected with the first clamping wall, is inwardly concaved on the outer side surface of the first clamping wall; and the connecting part of the second hanging hook body, which is connected with the second clamping wall, is inwardly concaved on the outer side surface of the second clamping wall. In the hanging hook of the flat plate PECVD device provided by the utility model, as the connecting part of the first hanging hook body, which is connected with the first clamping wall, is inwardly concaved on the outer side surface of the first clamping wall, and the connecting part of the second hanging hook body, which is connected with the second clamping wall, is inwardly concaved on the outer side surface of the second clamping wall, t the distance from a hook point at the contact part of a hook tip and the silicon wafer to the edge of the silicon wafer is reduced; and as no grating line is arranged on the edge of the silicon wafer, leakage currents of the hook point on the silicon wafer are reduced.
Description
Technical field
The utility model relates to solar cell making equipment technical field, more particularly, relates to a kind of hook of panel PECVD device.
Background technology
The main production of silicon monomer solar cell comprises operations such as cleaning and texturing, diffusion system p-n junction, PECVD coated with antireflection film, silk screen printing, sintering making electrode.Wherein, PECVD coated with antireflection film mainly is that main purpose is to reduce the reflection loss of solar cell surface to sunlight, and the surface and the matrix of silicon chip carried out passivation to silicon chip surface deposition SiNx:H film, increase minority carrier life time, thereby improve the photoelectric transformation efficiency of solar cell.
PECVD (Plasma Enhanced Chemical Vapor Deposition) technology mainly utilizes low-temperature plasma as energy source, silicon chip is placed on the negative electrode of glow discharge under the low pressure, utilize glow discharge (or adding heating element in addition) to make silicon chip be warmed up to predetermined temperature, feed an amount of reactant gases then, behind gas process series of chemical and the plasma reaction, form solid film on the surface of silicon chip.At present, in the process of PECVD processing silicon chip, mainly be with NH
3And SiH
4Be reactant gases, the navy blue SiNx:H film of deposition one deck.
The above-mentioned course of processing is that silicon slice placed is carried out on the graphite frame of PECVD device, and silicon chip hangs over and carries out the coated with antireflection film on the graphite frame by being arranged on hook on the graphite frame.Existing hook comprises clamping part as shown in Figure 1, and this clamping part comprises first clamping wall 12 and second clamping wall 11, and both can form holding tank 13; The two ends of the bottom side of clamping part are respectively arranged with hanger bulk 14 and hanger bulk 15, wherein connection section 142 evaginations of hanger bulk 14 are in the outer side of described first clamping wall 12, connection section 152 evaginations of second clamping wall 11 of coupling hook body 15 are in the outer side of second clamping wall 11, above-mentioned connection section 142 be arranged so that bill 141 is bigger from the distance (figure middle distance X) of first clamping wall 12, in like manner, connection section 152 is arranged so that bill 151 is bigger from the distance of second clamping wall 11.Please refer to reference to the accompanying drawings 2, with second clamping wall 11 is example, when hanger bulk 15 supports silicon chip 16, because the outer side distance of bill 151 distances second clamping wall 11 is bigger, the hook point that causes bill 151 to contact with silicon chip 16 is bigger from the Edge Distance of silicon chip, because the grid line of silicon chip is arranged on the isolated edge certain distance, and grid line is the silver electrode of silk screen printing, if bill is too near from grid line, promptly the hook point that contacts with bill on the silicon chip is just nearer from grid line, has increased rise to the bait a little leakage current of silicon chip.
In addition, above-mentioned bill is excessive apart from the distance (figure middle distance Y) of the bottom surface of holding tank 13, after holding tank 13 is installed on the graphite frame, when bill 151 supports silicon chip 16, the upper surface of silicon chip 16 is lower than the bottom surface of graphite frame, form the slit between the bottom surface of the upper surface of silicon chip 16 and graphite frame, like this when plating the SiNx:H film, make reactant gases enter into the back side (being the lower surface of Fig. 2 silicon chip) of silicon chip 16 by this slit easily, cause the back side also to deposit the very thin SiNx:H film of one deck, carry out aluminium back of the body field when the back side like this and add man-hour, the SiNx:H film at the silicon chip back side has influenced the bonding force between aluminium paste and the silicon chip, has influenced the processing quality of aluminium back of the body field.
The utility model content
In view of this, the utility model provides a kind of hook of panel PECVD device, with the distance between the outer side that reduces bill and clamping wall, makes hook point more near the edge that does not have grid line, reduces the silicon chip leakage current.
In order to achieve the above object, the utility model embodiment provides following technical scheme:
A kind of hook of panel PECVD device is used for support solar battery sheet production silicon chip, comprising:
Clamping part, this clamping part comprise first clamping wall and second clamping wall that is oppositely arranged and forms holding tank;
Be arranged on first hanger bulk and second hanger bulk at two ends of the bottom side of described clamping part, the connection section indent that described first hanger bulk is connected with described first clamping wall is in the outer side of described first clamping wall, and the connection section indent that described second hanger bulk is connected with described second clamping wall is in the outer side of described second clamping wall.
Preferably, in the hook of above-mentioned panel PECVD device, the inboard of the connection section that described first hanger bulk is connected with described first clamping wall is curved edge with the inboard of the connection section that second hanger bulk is connected with described second clamping wall.
Preferably, in the hook of above-mentioned panel PECVD device, the bill diameter of the bill of described first hanger bulk and second hanger bulk is 0.5mm.
Preferably, in the hook of above-mentioned panel PECVD device, also comprise first bending part and second bending part, described first bending part is arranged on the top of described first clamping wall, and described second bending part is arranged on the top of second clamping wall.
Preferably, in the hook of above-mentioned panel PECVD device, after the bill of the bill of described first hanger bulk and second hanger bulk was placed described silicon chip, the upper surface of described silicon chip was not less than the bottom surface of described holding tank.
Preferably, in the hook of above-mentioned panel PECVD device, the bill of the bill of described first hanger bulk and second hanger bulk is all in the same plane with the bottom surface of described holding tank.
As shown from the above technical solution, in the hook of the PECVD device that the utility model embodiment provides, the connection section indent that first hanger bulk is connected with first clamping wall is in the outer side of described first clamping wall, the connection section indent that second hanger bulk is connected with second clamping wall is in the outer side of second clamping wall, said structure all is offset the bill of the hanger bulk of winning and the bill of second hanger bulk in the middle of hook, shortened the distance between the outer side of the bill of the distance between the outer side of the bill of first hanger bulk and first clamping wall and second hanger bulk and second clamping wall, the hook point of contact position that has so just reduced bill and silicon chip is apart from the distance of silicon chip edge, because the edge of silicon chip does not have grid line, thereby reduce rise to the bait a little leakage current of silicon chip.
Description of drawings
The structural representation of the hook of the panel PECVD device that provides in the prior art is provided Fig. 1;
Fig. 2 is the structural representation of the hanger bulk of hook one side among Fig. 1 when supporting silicon chip;
The structural representation of the hook of the panel PECVD device that Fig. 3 provides for the utility model embodiment;
Fig. 4 is the structural representation of the hanger bulk of hook one side among Fig. 3 when supporting silicon chip.
Embodiment
In order to more clearly understand the technical scheme in the utility model, now make an explanation as follows with regard to the technology in the application documents:
Hook tangles the hook of solar battery sheet production with silicon chip on the graphite frame of panel PECVD device.
The hook point, the hole that cooperates with bill on the silicon chip makes things convenient for bill to tangle silicon chip.
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is a part of embodiment of the present utility model, rather than whole embodiment.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skills are obtained under the prerequisite of not making creative work belongs to the scope that the utility model is protected.
The utility model embodiment discloses a kind of hook of panel PECVD device, has reduced the distance between the outer side of bill and clamping wall, has reduced the leakage current on the silicon chip.
Please refer to accompanying drawing 3-4, the structural representation of the hook of the panel PECVD device that Fig. 3 provides for the utility model embodiment; Structural representation when Fig. 4 supports silicon chip for a side hanger bulk of linking up with among Fig. 3.
The hook of the panel PECVD device that the utility model embodiment provides, be used for process at PECVD, support silicon chip when silicon chip film-coated, to be example with plating SiNx:H film only describe the structure of this hook present embodiment, but the process that is not limited only to plate the SiNx:H film.
This hook comprises:
Clamping part, this clamping part comprise first clamping wall 22 and second clamping wall 21, and first clamping wall 22 and second clamping wall 21 be oppositely arranged, and form holding tank 23;
In the hook of the panel PECVD device that provides among the utility model embodiment, in the process of work, this hook is installed on the graphite frame, the bottom surface of graphite frame contacts with the bottom surface of holding tank 23, is used to place silicon chip on first hanger bulk 24 and second hanger bulk 25 and plates the SiNx:H film, please refer to accompanying drawing 4, with second hanger bulk 25 is example, silicon chip 26 is placed on second hanger bulk 25, and a silicon chip of solar cell needs 4 hooks, realizes the support to whole silicon wafer 26.In the hook that provides among the utility model embodiment, connection section 242 indents that first hanger bulk 24 is connected with first clamping wall 22 are in the outer side of first clamping wall 22, connection section 252 indents that second hanger bulk 25 is connected with second clamping wall 21 are in the outer side of second clamping wall 21, said structure all is offset the bill 241 of the hanger bulk 24 of winning and the bill 251 of second hanger bulk 25 to the middle part of hook, shortened the outer side of bill 241 to first clamping walls 22 of first hanger bulk 24, distance between the outer side of bill 251 to second clamping walls 21 of second hanger bulk 25, make the edge of bill 251 and the close more silicon chip 26 of hook point of the contact position of silicon chip 26, because the edge of silicon chip 26 does not have grid line, reduced rise to the bait a little leakage current of silicon chip.
In the hook of above-mentioned panel PECVD device, the inboard of the connection section 242 that first hanger bulk 24 is connected with first clamping wall 22 is curved edge with the inboard of the connection section 252 that second hanger bulk 25 is connected with second clamping wall 21.Simultaneously, the inboard of first hanger bulk 24 and second hanger bulk 25 has the arc limit that is connected with connection section, makes win hanger bulk 24 and second hanger bulk 28 be circular hook, and shape is attractive in appearance.
In the hook of the PECVD device that provides in the foregoing description, the diameter of the bill 241 of first hanger bulk 24 and the bill 251 of second hanger bulk 25 are 0.5mm, the bill diameter of existing hanger bulk is 1.0mm, in the hook that provides among the utility model embodiment, diameter to existing hook has carried out further dwindling, make that the diameter of bill is 0.5mm, reduced the diameter of hook point, reduced rise to the bait a little leakage current of silicon chip.
In the hook of the PECVD device that provides in the foregoing description, also comprise first bending part 221 and second bending part 211, wherein: first bending part 221 is arranged on the top of first clamping wall 22, second bending part 211 is arranged on the top of second clamping wall 21, above-mentioned first bending part 221 and second bending part 211 can draw back first clamping wall 22 and second clamping wall 21 and be installed on the graphite frame easily, have made things convenient for the installation of hook.
After the bill 241 of first hanger bulk 24 in the hook of the PECVD device that provides in the foregoing description and the bill of second hanger bulk 25 251 are placed and are gone up silicon chip 26, the upper surface of silicon chip 26 is not less than the bottom surface of holding tank 23, the bottom surface that is the upper surface of silicon chip 26 and holding tank 23 is to flat, the bottom surface that perhaps is higher than holding tank 23, after above-mentioned first hanger bulk 24 and second hanger bulk 25 satisfy above-mentioned requirements, thoroughly eliminated in the prior art, slit between silicon chip 26 and the graphite frame, avoid when plating SiNx:H film reactant gases from the slit, to pass and reached the situation at the back side (lower surface of the silicon chip among Fig. 4) of silicon chip 26, to the influence of the bonded between aluminium paste and the silicon chip, improved the processing quality of the aluminium back of the body field, back of aluminizing in the subsequent handling when having avoided the SiNx:H film to be aluminized in the back side.
Preferably, the bill 241 of above-mentioned first hanger bulk 24 and the bill 251 of second hanger bulk 25 are higher than the bottom surface of holding tank 23, and perhaps the bill 251 of the bill 241 of first hanger bulk 24 and second hanger bulk 25 is in the same plane with the bottom surface of holding tank 23.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from spirit or scope of the present utility model in other embodiments.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (6)
1. the hook of a panel PECVD device is used for support solar battery sheet production silicon chip, it is characterized in that, comprising:
Clamping part, this clamping part comprise first clamping wall and second clamping wall that is oppositely arranged and forms holding tank;
Be arranged on first hanger bulk and second hanger bulk at two ends of the bottom side of described clamping part, the connection section indent that described first hanger bulk is connected with described first clamping wall is in the outer side of described first clamping wall, and the connection section indent that described second hanger bulk is connected with described second clamping wall is in the outer side of described second clamping wall.
2. the hook of panel PECVD device according to claim 1, it is characterized in that the inboard of the connection section that described first hanger bulk is connected with described first clamping wall is curved edge with the inboard of the connection section that second hanger bulk is connected with described second clamping wall.
3. the hook of panel PECVD device according to claim 1 is characterized in that, the bill diameter of the bill of described first hanger bulk and second hanger bulk is 0.5mm.
4. the hook of panel PECVD device according to claim 3, it is characterized in that, also comprise first bending part and second bending part, described first bending part is arranged on the top of described first clamping wall, and described second bending part is arranged on the top of second clamping wall.
5. the hook of panel PECVD device according to claim 1 is characterized in that, after the bill of the bill of described first hanger bulk and second hanger bulk was placed described silicon chip, the upper surface of described silicon chip was not less than the bottom surface of described holding tank.
6. the hook of panel PECVD device according to claim 5 is characterized in that, the bill of the bill of described first hanger bulk and second hanger bulk is all in the same plane with the bottom surface of described holding tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206130805U CN201864776U (en) | 2010-11-17 | 2010-11-17 | Hanging hook of flat plate PECVD (plasma-enhanced chemical vapor deposition) device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206130805U CN201864776U (en) | 2010-11-17 | 2010-11-17 | Hanging hook of flat plate PECVD (plasma-enhanced chemical vapor deposition) device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201864776U true CN201864776U (en) | 2011-06-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206130805U Expired - Fee Related CN201864776U (en) | 2010-11-17 | 2010-11-17 | Hanging hook of flat plate PECVD (plasma-enhanced chemical vapor deposition) device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201864776U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103805965A (en) * | 2012-11-08 | 2014-05-21 | 上海神舟新能源发展有限公司 | Hook assembly for film plating of plate type PECVD graphite block |
-
2010
- 2010-11-17 CN CN2010206130805U patent/CN201864776U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103805965A (en) * | 2012-11-08 | 2014-05-21 | 上海神舟新能源发展有限公司 | Hook assembly for film plating of plate type PECVD graphite block |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: JETION TECHNOLOGY CO., LTD. Free format text: FORMER NAME: JIANGYIN JETION SCIENCE AND TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Shen Gang Town Cheng Road 214443 Jiangsu city of Jiangyin Province, No. 1011 Patentee after: Jetion Solar(China) Co., Ltd. Address before: Shen Gang Town Cheng Road 214443 Jiangsu city of Jiangyin Province, No. 1011 Patentee before: Jiangyin Jetion Science and Technology Co., Ltd. |
|
| C56 | Change in the name or address of the patentee |
Owner name: CNBM JETION SOLAR (CHINA) TECHNOLOGY CO., LTD. Free format text: FORMER NAME: JETION TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Shen Gang Town Cheng Road 214443 Jiangsu city of Jiangyin Province, No. 1011 Patentee after: China National Building Materials Group Corporation Jetion Solar (China) Co., Ltd. Address before: Shen Gang Town Cheng Road 214443 Jiangsu city of Jiangyin Province, No. 1011 Patentee before: Jetion Solar(China) Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110615 Termination date: 20161117 |