CN201859880U - Solar cell with conductive anti-reflecting film - Google Patents
Solar cell with conductive anti-reflecting film Download PDFInfo
- Publication number
- CN201859880U CN201859880U CN 201020588451 CN201020588451U CN201859880U CN 201859880 U CN201859880 U CN 201859880U CN 201020588451 CN201020588451 CN 201020588451 CN 201020588451 U CN201020588451 U CN 201020588451U CN 201859880 U CN201859880 U CN 201859880U
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- CN
- China
- Prior art keywords
- solar cell
- conduction
- antireflective coating
- reflecting film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a solar cell with a conductive anti-reflecting film, which comprises a solar cell body. A passivation layer is arranged on the upper surface of the solar cell body; a back electrode is arranged on the lower surface of the solar cell body; a main electrode is evaporated on the surface of the passivation layer; the conductive anti-reflecting film is evaporated on the surface of the passivation layer on the periphery of the main electrode; and the thickness of the main electrode is larger than that of the conductive anti-reflecting film. The conductive anti-reflecting film in the solar cell not only can function as an anti-reflecting film, but also can function in collecting current. As only one main electrode is arranged and no grid electrode is arranged, the area of a top electrode is decreased greatly, conversion efficiency of the solar cell is improved, manufacturing process is simple, and manufacturing cost is low. The conductive anti-reflecting film in the solar cell can be used for a silicone solar cell, a gallium arsenide solar cell and a concentrator solar cell.
Description
Technical field
The utility model relates to solar cell, relates in particular to a kind of solar cell with conduction antireflective coating.
Background technology
Solar cell generally is made up of top electrode (comprising main electrode and gate electrode), antireflective coating, photoelectric conversion material and back electrode, and wherein top electrode plays the effect of collected current.The top electrode of a kind of solar cell of prior art comprises two main electrodes 11 and is connected two gate electrodes 12 between the main electrode 11 as shown in Figure 1.This by two main electrodes be connected the top electrode that two gate electrodes between the main electrode 11 constitute and account for 4% of solar battery surface area, for concentrator solar cell, even the sunlight more than 10% is arranged because blocking of top electrode can't enter solar cell.In order to improve the conversion efficiency of solar cell, must reduce the top electrode area, still, littler top electrode area can cause electric current collection difficulty, series resistance increase, solar cell conversion efficiency to reduce.
In order to address the above problem, a kind of back-contact silicon solar cell has appearred, two electrodes all are placed on the back side, the conversion efficiency of solar cell is significantly improved.But this back-contact silicon solar cell technical process is very complicated, the manufacturing cost height, and also this structure is difficult to use in multijunction solar cell.
The utility model content
The purpose of this utility model exactly in order to address the above problem, provides a kind of solar cell with conduction antireflective coating.
In order to achieve the above object, the utility model has adopted following technical scheme: a kind of solar cell with conduction antireflective coating, comprise the solar cell body, upper surface at the solar cell body is provided with passivation layer, lower surface at the solar cell body is provided with back electrode, surperficial evaporation at described passivation layer has a main electrode, and the described passivation layer surface evaporation around described main electrode has the conduction antireflective coating, and the thickness of described main electrode is greater than the thickness of conduction antireflective coating.
Described conduction antireflective coating is by bottom TiO
2With top layer SiO
2Constitute.
Described conduction antireflective coating is by bottom TiO
2With top layer Al
2O
3Constitute.
A described main electrode is positioned at the centre of passivation layer surface.
Conduction antireflective coating in the utility model both can play the effect of antireflective coating, can play the effect of collected current again, owing to have only a main electrode, there is not gate electrode, significantly reduced the area of top electrode, improved the conversion efficiency of solar cell, and manufacture process is simple, low cost of manufacture.
Conduction antireflective coating in the utility model can be used for silicon solar cell, gallium arsenide solar cell, and concentrator solar cell.
Description of drawings
Fig. 1 is the upper electrode arrangement schematic diagram of prior art solar cell;
Fig. 2 is the structure principle chart that the utlity model has the solar cell of conduction antireflective coating;
Fig. 3 is a upper electrode arrangement schematic diagram of the present utility model.
Embodiment
Referring to Fig. 2, Fig. 3, the utlity model has the solar cell of conduction antireflective coating, comprise solar cell body 21, upper surface at solar cell body 21 is provided with passivation layer 22, lower surface at solar cell body 21 is provided with back electrode 23, surperficial evaporation at passivation layer 22 has a main electrode 24, and the passivation layer surface evaporation around main electrode 24 has conduction antireflective coating 25, and the thickness of main electrode 24 is greater than the thickness of conduction antireflective coating 25.
Conduction antireflective coating 25 in the utility model can be by bottom TiO
2With top layer SiO
2Constitute, also can be by bottom TiO
2With top layer Al
2O
3Constitute.
A main electrode 24 in the utility model is positioned at the centre on passivation layer 22 surfaces.
The manufacture method of the conduction antireflective coating in the utility model is to adopt vacuum coating equipment evaporation titanium dioxide and silicon dioxide.(1) in corresponding crucible, fills titanium dioxide and silicon dioxide respectively, shut door for vacuum chamber and vent valve then; (2) begin to take out low vacuum, pumping high vacuum again; (3) crucible of titanium dioxide is contained in selection, opens scanning, gun filament, high pressure and line successively, regulates electronic beam current, adjusts facula position simultaneously, makes the abundant fusion of titanium dioxide in the crucible; (4) adjust facula position then and make hot spot drop on the crucible center, regulate electronic beam current titanium dioxide is stably evaporated, open oxygen fill valve, open baffle plate then and evaporate titanium dioxide; (5) continue oxygenation 3min～10min after titanium dioxide evaporates; (6) crucible of silicon dioxide is contained in selection, opens baffle plate and evaporates; (7) continue oxygenation 3min～10min after silicon dioxide evaporates; (8) close oxygen fill valve then, open air valve is inflated vacuum chamber, opens door for vacuum chamber, takes out solar cell.
Adopt the process of vacuum coating equipment evaporation titanium dioxide and alundum (Al same as described above.
The solar cell of this structure uses antireflective coating as current collection layer, simplified manufacture process, and the antireflective coating electric conductivity of this method evaporation is good, not only can obtain quality antireflective coating preferably, can also replace the gate electrode of solar cell upper surface to play the effect of collected current, overcome battery upper surface gate electrode blocking incident light.The anti-reflection film of solar cell of this conduction can be used for silicon solar cell, gallium arsenide solar cell, and concentrator solar cell etc., can improve the conversion efficiency of solar cell greatly.
Claims (4)
- One kind have the conduction antireflective coating solar cell, comprise the solar cell body, upper surface at the solar cell body is provided with passivation layer, lower surface at the solar cell body is provided with back electrode, it is characterized in that: the surperficial evaporation at described passivation layer has a main electrode, described passivation layer surface evaporation around described main electrode has the conduction antireflective coating, and the thickness of described main electrode is greater than the thickness of conduction antireflective coating.
- 2. the solar cell with conduction antireflective coating as claimed in claim 1, it is characterized in that: described conduction antireflective coating is by bottom TiO 2With top layer SiO 2Constitute.
- 3. the solar cell with conduction antireflective coating as claimed in claim 1, it is characterized in that: described conduction antireflective coating is by bottom TiO 2With top layer Al 2O 3Constitute.
- 4. the solar cell with conduction antireflective coating as claimed in claim 1, it is characterized in that: a described main electrode is positioned at the centre of passivation layer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020588451 CN201859880U (en) | 2010-11-02 | 2010-11-02 | Solar cell with conductive anti-reflecting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020588451 CN201859880U (en) | 2010-11-02 | 2010-11-02 | Solar cell with conductive anti-reflecting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201859880U true CN201859880U (en) | 2011-06-08 |
Family
ID=44105681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020588451 Expired - Lifetime CN201859880U (en) | 2010-11-02 | 2010-11-02 | Solar cell with conductive anti-reflecting film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201859880U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779430A (en) * | 2012-10-26 | 2014-05-07 | 上海比亚迪有限公司 | Conductive antireflection film of crystalline silicon solar cell and crystalline silicon solar cell |
| CN105355708A (en) * | 2015-10-14 | 2016-02-24 | 广东爱康太阳能科技有限公司 | Solar cell provided with Ag transparent thin film and preparation method for solar cell |
-
2010
- 2010-11-02 CN CN 201020588451 patent/CN201859880U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779430A (en) * | 2012-10-26 | 2014-05-07 | 上海比亚迪有限公司 | Conductive antireflection film of crystalline silicon solar cell and crystalline silicon solar cell |
| CN105355708A (en) * | 2015-10-14 | 2016-02-24 | 广东爱康太阳能科技有限公司 | Solar cell provided with Ag transparent thin film and preparation method for solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110608 |