CN209232798U - A kind of CIGS solar battery of novel flexible high durable - Google Patents
A kind of CIGS solar battery of novel flexible high durable Download PDFInfo
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- CN209232798U CN209232798U CN201821328016.5U CN201821328016U CN209232798U CN 209232798 U CN209232798 U CN 209232798U CN 201821328016 U CN201821328016 U CN 201821328016U CN 209232798 U CN209232798 U CN 209232798U
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Abstract
The utility model relates to a kind of CIGS solar batteries of novel flexible high durable, including wire mark silver alloy top electrode, optical window layer, buffer layer, main absorbed layer, lower electrode, barrier layer and substrate, it further includes transparency conducting layer, and the substrate, barrier layer, lower electrode, main absorbed layer, buffer layer, optical window layer, transparency conducting layer and wire mark silver alloy top electrode are from bottom to top sequentially connected.The utility model improves sun light transmission rate by increasing novel transparent conductive layer, to improve the photoelectric conversion efficiency of thin-film solar cells.The above-mentioned full processing procedure of battery is produced using vacuum mode, has many advantages, such as that environmentally friendly, light, production is high, portable and installation is convenient, has industrialization value.
Description
Technical field
The utility model relates to thin film photocell technical field more particularly to a kind of CIGS sun of novel flexible high durable
It can battery.
Background technique
Global energy requirements are climbed to a higher point year by year, and in the case where energy conservation and environmental consciousness come back, developing the renewable sources of energy is that the whole world is common
Target；For the renewable sources of energy, no matter waterpower, wind-force, for geothermal power generation, be both needed to obtain conversion effect with kinetic energy conversion regime
Rate, and solar power generation is then the electricity generation system that electric energy is converted into using sunlight, without movable part in solar power system
Point, it is mechanical unlike rotation must be used in the electricity generation systems such as wind-force, waterpower, underground heat, therefore do not have high temperature and pressure and noise etc.
Puzzlement, does not cause environmental pressure in power generation process, is a cleanly green energy resource.In addition, solar source is inexhaustible to use it
Inexhaustible characteristic enables solar power system to have the advantages that one of continuous utilization is big；Although the light of solar power generation now
Photoelectric transformation efficiency Shang Bugao, but solar power system is not required to expend additional energy cost to be its advantage, in other words, these
Originally not by people using the energy now with fraction as power source.The sun is irradiated to the energy of earth's surface daily, surpasses
The energy required for spending the whole mankind 30 years, solar battery have become the mainstream of the following alternative energy source.
The huge number of solar battery, and CIGS (copper indium gallium selenide) thin-film solar cells possesses high conversion efficiency and hair
It opens up potentiality and is attracted attention, CIGS (copper indium gallium selenide) thin-film solar cells highest transfer efficiency is by U.S.'s renewable sources of energy reality at present
It tests room (NREL) to be created, efficiency is up to 22%.CIGS (copper indium gallium selenide) thin-film solar cells is developed so far its modular construction
Substantially part is by top electrode (AL/Ni), optical window layer (AZO low-resistance and ZnO high resistant), buffer layer (CdS), absorbed layer (CIGS), back electricity
Pole (Mo/NaMo) is formed with substrate (GLASS)；Traditional optical window layer mainly with AZO(Zinc-aluminium) target utilize vacuum
Magnetically controlled DC sputtering plated film forms.
In single film layer, the parameter allotment of each material composition ratio, film crystal structure, processing procedure mode and optimization processing procedure etc.
Various factors is the challenge in its preparation, in addition, it is also necessary to take into account that each film layer is stacked into the matching of component, each film layer preparation side
The equal many factors that influence each other between formula and processing procedure, especially show that CIGS (copper indium gallium selenide) joins various processing procedures from pertinent literature
It is extremely sensitive for component influences under several, more increase difficulty of CIGS (copper indium gallium selenide) thin-film solar cells in preparation, together
When but also technology door relatively improves, be considered a kind of bigger solar cell of technical difficulty in international photovoltaic circle.
Transparent conductive film (TCO) is due to can be used for CIGS thin film solar energy with excellent translucidus and electric conductivity
Preceding electrode material and window layer material of battery, such as Al-Doped ZnO (AZO) etc. will be reached since AZO film resistor is higher
Resistance needed for CIGS battery, general AZO film need 600-1000nm thickness, therefore general visible light (550nm wavelength)
Light permeable rate is both less than 82%, in the infrared band (800-1200nm wavelength) of long wavelength, light transmittance be even more be greatly reduced (<
75%) absorption and transfer efficiency of light, are seriously affected.
Utility model content
In view of this, a kind of CIGS solar battery of novel flexible high durable is provided, it is conductive by increasing novel transparent
Layer improves sun light transmission rate, to improve the photoelectric conversion efficiency of thin-film solar cells.
A kind of CIGS solar battery of novel flexible high durable, including wire mark silver alloy top electrode, optical window layer, buffering
Layer, main absorbed layer, lower electrode, barrier layer and substrate, further include transparency conducting layer, the transparency conducting layer is preferably IZTO/
ITO/IZTO sandwich structure layer, the substrate, barrier layer, lower electrode, main absorbed layer, buffer layer, optical window layer, transparency conducting layer
It being from bottom to top sequentially connected with wire mark silver alloy top electrode, the lower electrode is preferably MoNa/MoK/Mo three-decker layer, wherein
MoNa and MoK sequence can be interchanged.
Further, described IZTO layers with a thickness of 75-300nm, refractive index 1.9-2.2；The ITO layer is with a thickness of 75-
300nm, refractive index 1.9-2.1.
Further, the substrate is stainless steel substrate；The barrier layer is preferably WTi, Ti, Cr or TiN；The main suction
Receive the preferred CIGS absorbed layer of layer；Buffer layer preferred CdS, In2S3 or ZnOS；The preferred ZnO or ZnMgO of optical window layer；The net
Print silver alloy top electrode is preferably wire mark and sintering Ag alloy electrode.
Further, when the preferred ZnO of the optical window layer, with a thickness of 50-200nm, refractive index 2.0-2.1；The light
When the preferred ZnMgO of window layer, with a thickness of 50-200nm, refractive index 1.9-2.2.
Further, when the preferred CdS of the buffer layer, with a thickness of 20-200nm, refractive index 2.2-2.6；It is described slow
When rushing the preferred In2S3 of layer, with a thickness of 20-200nm, refractive index 2.2-2.6；When the preferred ZnOS of the buffer layer, thickness
For 20-200nm, refractive index 2.1-2.6.
Further, the CIGS absorber thickness is 500-3000nm.
Further, described MoNa layers with a thickness of 50-300nm, and described MoK layers with a thickness of 50-300nm, the Mo thickness
Degree is 50-300nm.
Further, when the preferred WTi of the barrier layer, with a thickness of 25-200nm；It is thick when the preferred Ti of the barrier layer
Degree is 25-200nm；When the preferred Cr of the barrier layer, with a thickness of 25-200nm；When the preferred TiN of the barrier layer, with a thickness of
25-200nm。
Further, the stainless steel substrate is with a thickness of 0.05-0.15mm.
The CIGS solar battery of above-mentioned novel flexible high durable is also adopted other than flexible stainless steel substrate and barrier layer
It is main transparent conductive film layer with novel I ZTO/ITO/IZTO film sandwich structure, by the electrically conducting transparent of special designing
Film can be reduced thickness, reduces film resistance and improve translucidus energy.The development and utilization novel I ZTO and ito thin film of this product are substituted
Traditional AZO film, further reduces optical window thicknesses of layers, simultaneously because the transparent conductive film of outermost layer non crystalline structure designs,
Helping, which reduces aqueous vapor, enters chance inside battery material, maintains the quality of transparent conductive film and the stabilization of other internal film layers
Property, it is ensured that battery is in turnover and the convenience of rear processing procedure.The thermal stability of film is good, improves sputtering thin film quality and performance, by
It is relatively thin (75-500nm) in required film layer, absorption of the TCO thin film to visible light and infrared light is greatly reduced, to improve CIGS
The transformation efficiency of hull cell.With the lower electrode of three-decker, more Na and K element are provided and diffuse to absorbed layer, is conducive to
The raising of transfer efficiency.The full processing procedure of CIGS solar battery of flexible high durable is produced using vacuum mode, has environmental protection, matter
Gently, the advantages that production is high, portable and installation is convenient, has industrialization value.
Detailed description of the invention
Fig. 1 is the CIGS solar battery structure schematic diagram of the novel flexible high durable of the utility model embodiment.
Specific embodiment
The utility model is described in detail below with reference to specific embodiments and the drawings.
Referring to Fig. 1, showing a kind of CIGS solar battery 10 of novel flexible high durable, including wire mark silver alloy powers on
Pole 1, transparency conducting layer 2, optical window layer 3, buffer layer 4, main absorbed layer 5, lower electrode 6, barrier layer 7 and substrate 8, wherein the substrate
8, barrier layer 7, lower electrode 6, main absorbed layer 5, buffer layer 4, optical window layer 3, transparency conducting layer 2 and wire mark silver alloy top electrode 1 by
It is sequentially connected on down.
Further, the transparency conducting layer 2 is preferably IZTO/ITO/IZTO sandwich structure layer；Specifically, described
IZTO layers with a thickness of 75-300nm, refractive index 1.9-2.2, when IZTO layers with a thickness of 150nm, resistance value be less than 5x10-4
Ω cm, it is seen that light translucency is greater than 82%；The ITO layer is with a thickness of 75-300nm, refractive index 1.9-2.1, when ITO layer thickness
When for 150nm, resistance value is less than 4x10-4Ω cm visible light transmission is greater than 82%.
Further, the substrate 8 is stainless steel substrate；The barrier layer 7 is preferably WTi, Ti, Cr or TiN；Under described
Electrode 6 is preferably MoNa/MoK/Mo three-decker layer, and wherein MoNa and MoK sequence can be interchanged；The main absorbed layer 5 is preferably
CIGS absorbed layer；Buffer layer 4 preferred CdS, In2S3 or ZnOS；The 3 preferred ZnO or ZnMgO of optical window layer；The wire mark silver closes
Au upper electrode 1 is preferably wire mark and sintering Ag alloy electrode.Wherein MoNa layers with a thickness of 50-300nm, described MoK layers with a thickness of
50-300nm, described Mo layers with a thickness of 50-300nm；Wherein stainless steel substrate 8 is with a thickness of 0.05-0.15mm.
Specifically, when the 3 preferred ZnO of optical window layer, with a thickness of 50-200nm, refractive index 2.0-2.1；The optical window
When 3 preferred ZnMgO of layer, with a thickness of 50-200nm, refractive index 1.9-2.2.
Specifically, when the 4 preferred CdS of buffer layer, with a thickness of 20-200nm, refractive index 2.2-2.6；The buffering
When 4 preferred In2S3 of layer, with a thickness of 20-200nm, refractive index 2.2-2.6；When the 4 preferred ZnOS of buffer layer, thickness
For 20-200nm, refractive index 2.1-2.6.
Specifically, the CIGS absorbed layer 5 uses the side of vacuum sputter with a thickness of 500-3000nm, CIGS absorbed layer 5
The modes such as selenizing make after formula, the evaporation of vacuum multistage and vacuum splashing and plating.
Specifically, when the 7 preferred WTi of barrier layer, with a thickness of 25-200nm；It is thick when the 7 preferred Ti of barrier layer
Degree is 25-200nm；When the 7 preferred Cr of barrier layer, with a thickness of 25-200nm；When the preferred TiN of the barrier layer, thickness
For 25-200nm.
Specifically, before plated film, substrate 8 is pre-processed, including is destaticed, at ion beam bombardment, heat de-airing
Reason etc..
Specifically, the production of barrier layer 7 is that sputter cavity background pressure is evacuated to 0.7 × 10 with vacuum-pumping system-5-
0.9×10-5After torr, using argon gas as working gas, the work pressure of argon gas control sputter cavity will be passed through through throttle valve
Power is 5 × 10-3Torr, using high-purity WTi, Ti or Cr target (purity 99.95%) with one layer of 25-200nm of DC power supply sputter
Thick WTi film layer, Ti film layer perhaps Cr film layer or are passed through nitrogen using Ti target and react to form 25-200nm thickness
TiAlN thin film layer, so as to complete being coated with for barrier layer 7.
Specifically, sputter cavity background pressure is evacuated to 0.7 × 10 with vacuum-pumping system by the production of lower electrode 6-5-0.9
×10-5After torr, using argon gas as working gas, the operating pressure of argon gas control sputter cavity will be passed through through throttle valve
It is 5 × 10-3Torr, using high-purity MoNa target (purity 99.95%) with the MoNa of DC power supply sputter first layer 50-300nm thickness
Film layer, using MoK alloy (purity 99.95%) with the MoK layer of DC power supply sputter 50-300nm on MoNa layers, finally
Using Mo alloy (purity 99.95%) with the MoNa layer of DC power supply sputter 50-300nm on MoK layers, so as to complete under
6 layers of electrode are coated with, and the sequence of MoK and MoNa can be interchanged.
Specifically, the production of main absorbed layer 5 utilizes vapor deposition altogether with four kinds of raw materials of high-purity Cu, In, Ga, Se (purity 99.99%)
The CIGS that technology manufactures one layer of 500-3000nm thickness absorbs layer film, and substrate is heated to 350-550 DEG C when evaporating coating altogether, in turn
Complete the production of CIGS absorbed layer.Or CIGS target is used, in sputter, vacuum-pumping system is by sputter cavity background pressure
Power is evacuated to 0.7 × 10-5-0.9×10-5After torr, using argon gas as working gas, argon gas control will be passed through through throttle valve
The operating pressure of sputter cavity is 2-5 × 10-3Torr carries out sputter process with pulsed DC source, and then completes main absorbed layer 5
Production.
Specifically, the production of buffer layer 4 is that sputter cavity background pressure is evacuated to 0.7 × 10 with vacuum-pumping system-5-
0.9×10-5After torr, using argon gas as working gas, the work pressure of argon gas control sputter cavity will be passed through through throttle valve
Power is 2-5 × 10-3Torr is carried out sputter process with RF power supply, is adopted using CdS, In2S3 or ZnOS target (purity > 99.9%)
20-200nm CdS buffer layer thin film is made with RF power supply sputter.
Specifically, the production of optical window layer 3 is that sputter cavity background pressure is evacuated to 0.7 × 10 with vacuum-pumping system-5-
0.9×10-5After torr, using argon gas as working gas, the work pressure of argon gas control sputter cavity will be passed through through throttle valve
Power is 2-5 × 10-3Torr, with pulse direct current (DC) power supply carry out sputter process, using ZnO target (purity 99.95%) or
Transparent ZnO or the ZnMgO oxidation of film thickness 50-200nm or so is made in target (purity 99.95%) vacuum splashing and plating of ZnMgO
Object film.
Specifically, the production of transparent conductive film layer 2 be sputter cavity background pressure is evacuated to 0.7 with vacuum-pumping system ×
10-5-0.9×10-5After torr, using argon gas as working gas, argon gas control sputter cavity will be passed through through throttle valve
Operating pressure is 2-5 × 10-3Torr, then using pulse direct current (DC) power supply and IZTO target (purity 99.95%) and ITO target
Material (purity 99.95%), the operating pressure of control sputter cavity are 2-5 × 10-3Torr is coated with the electrically conducting transparent of 100-500nm thickness
Film 2.
Specifically, the production of wire mark silver alloy top electrode 1 is finally carried out using wet print method.Complete novel flexible high durable
CIGS thin film solar battery primary structure production.
Above disclosed is only a kind of preferred embodiment of the utility model, certainly cannot be practical to limit with this
Novel interest field, therefore equivalent variations made according to the claim of the utility model still belong to what the utility model was covered
Range.
Claims (9)
1. a kind of CIGS solar battery of novel flexible high durable, including wire mark silver alloy top electrode, optical window layer, buffer layer,
Main absorbed layer, lower electrode, barrier layer and substrate, it is characterised in that: further include transparency conducting layer, the transparency conducting layer is
IZTO/ITO/IZTO sandwich structure layer is the substrate, barrier layer, lower electrode, main absorbed layer, buffer layer, optical window layer, transparent
Conductive layer and wire mark silver alloy top electrode are from bottom to top sequentially connected, and the lower electrode is MoNa/MoK/Mo three-decker layer,
Middle MoNa and MoK sequence can be interchanged.
2. the CIGS solar battery of novel flexible high durable according to claim 1, it is characterised in that: IZTO layers described
With a thickness of 75-300nm, refractive index 1.9-2.2；The ITO layer is with a thickness of 75-300nm, refractive index 1.9-2.1.
3. the CIGS solar battery of novel flexible high durable according to claim 1, it is characterised in that: the substrate is
Stainless steel substrate；The barrier layer four selects one between WTi, Ti, Cr and TiN；The main absorbed layer is CIGS absorbed layer；Buffering
Layer one-out-three between CdS, In2S3 and ZnOS；The optical window layer is ZnO or ZnMgO；The wire mark silver alloy powers on extremely net
Print and sintering Ag alloy electrode.
4. the CIGS solar battery of novel flexible high durable according to claim 3, it is characterised in that: the optical window layer
When for ZnO, with a thickness of 50-200nm, refractive index 2.0-2.1；When the optical window layer is ZnMgO, with a thickness of 50-
200nm, refractive index 1.9-2.2.
5. the CIGS solar battery of novel flexible high durable according to claim 3, it is characterised in that: the buffer layer
When for CdS, with a thickness of 20-200nm, refractive index 2.2-2.6；When the buffer layer is In2S3, with a thickness of 20-
200nm, refractive index 2.2-2.6；When the buffer layer is ZnOS, with a thickness of 20-200nm, refractive index 2.1-2.6.
6. the CIGS solar battery of novel flexible high durable according to claim 3, it is characterised in that: the CIGS inhales
Layer is received with a thickness of 500-3000nm.
7. the CIGS solar battery of novel flexible high durable according to claim 1, it is characterised in that: MoNa layers described
With a thickness of 50-300nm, described MoK layers with a thickness of 50-300nm, described Mo layers with a thickness of 50-300nm.
8. the CIGS solar battery of novel flexible high durable according to claim 3, it is characterised in that: the barrier layer
When for WTi, with a thickness of 25-200nm；When the barrier layer is Ti, with a thickness of 25-200nm；When the barrier layer is Cr,
It is with a thickness of 25-200nm；When the barrier layer is TiN, with a thickness of 25-200nm.
9. the CIGS solar battery of novel flexible high durable according to claim 3, it is characterised in that: the stainless steel
Substrate thickness is 0.05-0.15mm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112228A (en) * | 2019-04-26 | 2019-08-09 | 圣晖莱南京能源科技有限公司 | A kind of isolation-type CIGS solar battery and preparation method thereof |
-
2018
- 2018-08-16 CN CN201821328016.5U patent/CN209232798U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112228A (en) * | 2019-04-26 | 2019-08-09 | 圣晖莱南京能源科技有限公司 | A kind of isolation-type CIGS solar battery and preparation method thereof |
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Effective date of registration: 20200527 Address after: 341000 building 6, standard workshop, north area, Hong Kong Industrial Park, 168 Xiangjiang Avenue, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee after: Ganzhou Chuangfa Photoelectric Technology Co., Ltd Address before: 341000 standard factory building, North Zone, Hongkong Industrial Park, Ganzhou economic and Technological Development Zone, Jiangxi, 6 Patentee before: YANCHUANG APPLIED MATERIALS (GANZHOU) INC., Ltd. |
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