CN201858872U - Evaporated ceramic silicon wafer bracket component of mesh-belt free sintering furnace - Google Patents
Evaporated ceramic silicon wafer bracket component of mesh-belt free sintering furnace Download PDFInfo
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- CN201858872U CN201858872U CN2010205814802U CN201020581480U CN201858872U CN 201858872 U CN201858872 U CN 201858872U CN 2010205814802 U CN2010205814802 U CN 2010205814802U CN 201020581480 U CN201020581480 U CN 201020581480U CN 201858872 U CN201858872 U CN 201858872U
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- steel wire
- ceramic coating
- silicon wafer
- sintering furnace
- coating layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
An evaporated ceramic silicon wafer bracket component of a mesh-belt free sintering furnace comprises metal sleeves, steel wire brackets, ceramic coating layers and limiting screws. The steel wire brackets are welded on the metal sleeves, the metal sleeves are provided with threaded holes, the limiting screws are screwed into the threaded holes on the metal sleeves, and the ceramic coating layers are arranged on the outer surfaces of the steel wire brackets. Since a quartz glass tube has the advantages of high strength, high temperature resistance, low expansion coefficient, stable acid and chemical resistance and fine thermal shock resistance, the quartz glass which is in hollow pipe structure absorbs less heat energy when being used as a silicon wafer bracket main rod. The outer surfaces of the steel wire brackets are provided with the ceramic coating layers, aluminum paste attached on the back of each silicon wafer is not easy to form sharp alloy body with the ceramic coating layers because ceramic has higher melting point and better wear resistance, and accordingly breakage rate during transmission can be reduced. Therefore, requirements on strength, high-temperature resistance and abrasion resistance of the brackets are met, and the possibility that silicon wafers are stained by metal ions when the silicon wafers contact with metal during sintering process is reduced.
Description
Technical field:
The utility model relates to a kind of solar battery sheet does not have net strip sintering furnace, relates in particular to the chip transmission device.
Background technology:
At present, the sintering furnace that manufacture of solar cells both domestic and external manufacturing firm mainly uses American-European enterprise and produced, this class sintering furnace structure all is a net belt type tunnel sintering furnace, sintering furnace vertically on be provided with preheating binder removal district successively, heating zone, sintering zone and cooling area, arrange the heating fluorescent tube of different densities in zones of different, control each regional temperature with this, the silicon chip that prints electrode transmits by guipure, pass through the different furnace temperature district of sintering furnace successively, finish the preheating binder removal, heat up, the electrode sintering process of sintering and cooling, though this net belt type tunnel sintering technology comparative maturity, but vertical floor space of whole sintering furnace is big, need the very long body of heater of design could guarantee the preheating binder removal of silicon chip in the tunnel transmission course, heat up, sintering, temperature-fall period, because the technological temperature in high temperature sintering district need be between 850-950 ℃, therefore need the length of tunnel of design 2-3 rice just can reach so high temperature, this makes the bulky of net belt type sintering furnace.Can't satisfy the sintering process requirement if dwindle then.In addition, high temperature resistant guipure is in the process of running, need be inside and outside body of heater cycle operation, guipure partly follows silicon chip to accept the process that heats up and lower the temperature, therefore, in operation process, guipure can carry out a large amount of heats in stove, and this part heat will be all as loss, not only caused the waste of big energy, and the operating ambient temperature that raise, for this reason, the applicant has developed a kind of solar battery sheet does not have net strip sintering furnace, it can overcome the deficiency that existing net belt type tunnel sintering furnace exists well, and this occupation area of equipment is little, thermal efficiency height, power consumption is few, and energy-saving effect is remarkable.
Described solar battery sheet does not have net strip sintering furnace, comprise loading bay 1, tunnel type sinter box 2, discharge pedestal 3, silicon chip conveying device 4 and furnace body frame 5, as shown in Figure 1, silicon chip conveying device 4 is arranged between loading bay 1 and the discharge pedestal 3, and be arranged in tunnel type sinter box 2, silicon chip conveying device 4 comprises analog bracket and movable support bracket, the two ends of analog bracket are separately fixed on the fixed base plate in loading bay 1 and the discharge pedestal 3, the two ends of movable support bracket are separately fixed on the sliding panel that is driven by multiple elevating mechanism and reciprocal translation mechanism, movable support bracket is under reciprocal elevating mechanism and reciprocal translation mechanism double action, drive movable support bracket and periodically finish rising, reach, descend and backward movement, thereby the silicon chip that will be placed on the analog bracket is progressively moved forward.In this no net silicon cell sintering furnace, analog bracket still is all necessary steady operation under 850-950 ℃ hot environment for a long time of movable support bracket, so bracket main body bar adopting quartz glass pipe, silicon chip stand-off parts are made with steel material, operate as normal under like this temperature conditions so just
Though contact for point between silicon chip and the steel stand-off or short line segment contacts, but the aluminium paste at the silicon chip back side still can stick in sintering process on the metallic support, metallic aluminium and steel stand-off at high temperature can form alloy, form spherical metallics in the upper end of stand-off contact point.Not only can cause the rising of fragment rate, also need to spend bigger man power and material and time to go to safeguard that silicon chip still can be stained owing to contacting by metal ion with the steel stand-off simultaneously.
The utility model content:
The purpose of this utility model provides a kind of evaporation pottery silicon chip stand-off parts that do not have net strip sintering furnace.
The technical scheme that the utility model adopted is:
The evaporation pottery silicon chip stand-off parts of described no net strip sintering furnace, it is characterized in that: it comprises metallic sheath, steel wire stand-off, ceramic coating and stop screw, the steel wire stand-off is welded on the metallic sheath, on metallic sheath, be provided with screwed hole, stop screw is screwed in the screwed hole on the metallic sheath, is provided with ceramic coating on the outer surface of steel wire stand-off.
Further, on metallic sheath, also be provided with opening.
Since quartz glass tube have the intensity height, high temperature resistant, the coefficient of expansion is low, acidproof, chemically stable, resistance to heat shocks, advantage that electrical insulation capability is good, it is well suited for the main body bar as the silicon chip carriage, the tubular structure caloric receptivity is few.Silicon chip stand-off parts are made up of metallic sheath, steel wire stand-off, ceramic coating and stop screw, the steel wire stand-off is welded on the metallic sheath, be provided with screwed hole on metallic sheath, stop screw is screwed in the metallic sheath upper screwed hole, is provided with ceramic coating on the outer surface of steel wire stand-off.Because pottery has very high fusing point and good wear resistance, the aluminium paste that adheres to from the silicon chip back side is difficult for forming sharp-pointed alloy body with it, can reduce the breakage rate in the transmission course.So both satisfied the intensity that stand-off should possess, high temperature resistant, wear-resistant requirement, reduce silicon chip in sintering process owing to cause silicon chip to be stained by metal ion with Metal Contact.On metallic sheath, offer opening, be convenient to the suit of metallic sheath at quartz glass tube; Offering screwed hole on metallic sheath, offer locating hole on quartz glass tube, all is for the ease of with stop screw metallic sheath being fixed on the quartz glass tube.
Description of drawings:
Fig. 1 is the structural representation of no guipure silicon cell sintering furnace;
Fig. 2 is a structural representation of the present utility model;
Fig. 3 is installed in structural representation on the quartz glass tube for the utility model;
Among the figure: the 1-loading bay; 2-tunnel type sinter box; The 3-discharge pedestal; 4-silicon chip conveying device; The 5-furnace body frame; The 41-metallic sheath; 42-steel wire stand-off; The 43-ceramic coating; The 44-stop screw; The 45-screwed hole; The 46-opening; The 47-quartz glass tube.
The specific embodiment:
Below in conjunction with Figure of description the specific embodiment of the present utility model is described:
The evaporation pottery silicon chip stand-off parts of described no net strip sintering furnace, as Fig. 2～shown in Figure 3, it comprises metallic sheath 41, steel wire stand-off 42, ceramic coating 43 and stop screw 44, steel wire stand-off 42 is welded on the metallic sheath 41, on metallic sheath 41, be provided with screwed hole 45 and opening 46, stop screw 44 is screwed in metallic sheath 41 upper screwed holes 45, is provided with ceramic coating 43 on the outer surface of steel wire stand-off 42.In actual use, the utility model is sleeved on the quartz glass tube 47 by metallic sheath 41.
Claims (2)
1. evaporation pottery silicon chip stand-off parts that do not have a net strip sintering furnace, it is characterized in that: it comprises metallic sheath (41), steel wire stand-off (42), ceramic coating (43) and stop screw (44), steel wire stand-off (42) is welded on the metallic sheath (41), on metallic sheath (41), be provided with screwed hole (45), stop screw (44) is screwed in the screwed hole (45) on the metallic sheath (41), is provided with ceramic coating (43) on the outer surface of steel wire stand-off (42).
2. according to the evaporation pottery silicon chip stand-off parts of the described no net strip sintering furnace of claim 1, it is characterized in that: on metallic sheath (41), also be provided with opening (46).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205814802U CN201858872U (en) | 2010-10-29 | 2010-10-29 | Evaporated ceramic silicon wafer bracket component of mesh-belt free sintering furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205814802U CN201858872U (en) | 2010-10-29 | 2010-10-29 | Evaporated ceramic silicon wafer bracket component of mesh-belt free sintering furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201858872U true CN201858872U (en) | 2011-06-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205814802U Expired - Fee Related CN201858872U (en) | 2010-10-29 | 2010-10-29 | Evaporated ceramic silicon wafer bracket component of mesh-belt free sintering furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201858872U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102032774A (en) * | 2010-10-29 | 2011-04-27 | 常州亿晶光电科技有限公司 | Evaporation ceramic silicon wafer support leg member of belt-free sintering furnace |
-
2010
- 2010-10-29 CN CN2010205814802U patent/CN201858872U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102032774A (en) * | 2010-10-29 | 2011-04-27 | 常州亿晶光电科技有限公司 | Evaporation ceramic silicon wafer support leg member of belt-free sintering furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110608 Termination date: 20151029 |
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| EXPY | Termination of patent right or utility model |