CN201850329U - Single crystal growth monitor of jewels - Google Patents
Single crystal growth monitor of jewels Download PDFInfo
- Publication number
- CN201850329U CN201850329U CN2010205990217U CN201020599021U CN201850329U CN 201850329 U CN201850329 U CN 201850329U CN 2010205990217 U CN2010205990217 U CN 2010205990217U CN 201020599021 U CN201020599021 U CN 201020599021U CN 201850329 U CN201850329 U CN 201850329U
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- temperature
- measurer
- single crystal
- crystal growth
- temperature measurer
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Abstract
The utility model discloses a single crystal growth monitor of jewels, which comprises a crystal pulling machine and a temperature field, wherein the outer wall of the crystal pulling machine is provided with a window, the temperature field is arranged in the crystal pulling machine, and a crucible is arranged in the temperature field. The utility model is characterized in that a temperature measurer with one end aligned with the crucible in the window is arranged in an inclined upper position of the crystal pulling machine, one side of the temperature measurer is connected with a temperature control system, one side of the temperature control system is connected with a power supply, a connecting wire is connected among the temperature measurer, the temperature control system and the power supply, and the temperature measurer is an infrared temperature measurer. The single crystal growth monitor has a simple structure, the infrared temperature measurer is adopted for precisely controlling the temperature of the temperature field in the crystal pulling machine, and the stability of the crystal interface and the completeness of crystals are effectively ensured.
Description
Technical field:
The utility model relates to the device for monitoring temperature field, relates in particular to a kind of single crystal growth monitoring device of jewel.
Background technology:
It is pure to pursue height, and perfection of crystal is good, and sapphire crystal is scientific research personnel's a main direction of studying always cheaply.Because it is fast that the guided mode method has crystalline growth velocity, size can accurately be controlled, and has simplified the crystalline work program, greatly reduce the crystal difficulty of processing, saved material, time and the energy, reduce production costs, increasing economic efficiency, is the current topmost growth method of artificial sapphire.But in traditional growth method is to utilize manual observation to adjust power to carry out control growing; the Personnel Skill Levels is had relatively high expectations; the temperature control precision difference influences the stabilizing influence perfection of crystal of crystalizing interface, thereby quality product consistence difference has limited industrialization, stdn, large-scale production.
Therefore temperature control is most important for gem processing, the utility model adopts infrared thermometer, all is in 1 degree for the common precision of accurate infrared thermometer, uses infrared thermometer, but the subtle change of quick detection service temperature just can solve temperature problem in its rudiment.
The utility model content:
The purpose of this utility model provides a kind of single crystal growth monitoring device of jewel, has solved traditional manual observation effectively and has adjusted the method that power carries out control growing, to the problem of temperature controlled less stable.
The technical solution of the utility model is as follows:
A kind of single crystal growth monitoring device of jewel, comprise crystal puller, Wen Chang, described crystal puller outer wall is provided with form, the temperature field is installed in the described crystal puller, described temperature is provided with crucible in the field, it is characterized in that: described crystal puller oblique upper is equipped with the temperature measurer that an end is aimed at crucible in the form, and described temperature measurer one side connects temperature controlling system.
The single crystal growth monitoring device of described jewel is characterized in that: described temperature controlling system one side is connected with power supply, is provided with wiring between described temperature measurer, temperature controlling system, the power supply, and described temperature measurer is an infrared thermometer.
The utility model has the advantages that:
Of the present utility model simple in structure, adopt infrared thermometer that the temperature of the temperature field in the crystal puller is controlled accurately, effectively guaranteed the stability and the perfection of crystal of crystalizing interface.
Description of drawings:
Fig. 1 is a structural representation of the present utility model.
Embodiment:
A kind of single crystal growth monitoring device of jewel, comprise crystal puller 1, temperature field 2, crystal puller 1 outer wall is provided with form 3, temperature field 2 is installed in crystal puller 1, be provided with crucible 4 in the temperature field 2, crucible 4 is the raw materials that are used for placing gem processing, crystal puller 1 oblique upper is equipped with the temperature measurer 5 that an end is aimed at crucible 4 in the form 3, the temperature measurer 5 main temperature that detect the crystalizing interface of the raw material in the crucible 4, temperature measurer 5 one sides connect temperature controlling system 6, temperature controlling system 6 one sides are connected with power supply 7, temperature measurer 5, temperature controlling system 6, be connected with wiring 8 between the power supply 7, temperature measurer 5 is a double color infrared temperature measuring instrument.
Claims (2)
1. the single crystal growth monitoring device of a jewel, comprise crystal puller, Wen Chang, described crystal puller outer wall is provided with form, the temperature field is installed in the described crystal puller, described temperature is provided with crucible in the field, it is characterized in that: described crystal puller oblique upper is equipped with the temperature measurer that an end is aimed at crucible in the form, and described temperature measurer one side connects temperature controlling system.
2. the single crystal growth monitoring device of jewel according to claim 1, it is characterized in that: described temperature controlling system one side is connected with power supply, be connected with wiring between described temperature measurer, temperature controlling system, the power supply, described temperature measurer is an infrared thermometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205990217U CN201850329U (en) | 2010-11-08 | 2010-11-08 | Single crystal growth monitor of jewels |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205990217U CN201850329U (en) | 2010-11-08 | 2010-11-08 | Single crystal growth monitor of jewels |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201850329U true CN201850329U (en) | 2011-06-01 |
Family
ID=44092729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205990217U Expired - Fee Related CN201850329U (en) | 2010-11-08 | 2010-11-08 | Single crystal growth monitor of jewels |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201850329U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102286776A (en) * | 2011-09-01 | 2011-12-21 | 江西同人电子材料有限公司 | Temperature control system for sapphire crystal growth by Kyropoulos |
| CN103806091A (en) * | 2014-02-26 | 2014-05-21 | 闽能光电集团有限公司 | Automatic control method for sapphire crystals in edge-defined film-fed growth |
| CN104180925A (en) * | 2014-07-31 | 2014-12-03 | 成都东骏激光股份有限公司 | Temperature measuring method via displacement |
| CN104180927A (en) * | 2014-08-28 | 2014-12-03 | 洛阳市西格马炉业有限公司 | Measurement platform and measurement method for standard temperature of super-high-temperature hearth |
| CN106757317A (en) * | 2016-11-25 | 2017-05-31 | 中国科学院长春应用化学研究所 | Rare earth crystal growth equipment, rare earth crystal growth technique and application |
-
2010
- 2010-11-08 CN CN2010205990217U patent/CN201850329U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102286776A (en) * | 2011-09-01 | 2011-12-21 | 江西同人电子材料有限公司 | Temperature control system for sapphire crystal growth by Kyropoulos |
| CN102286776B (en) * | 2011-09-01 | 2014-03-26 | 江西同人电子材料有限公司 | Temperature control system for sapphire crystal growth by Kyropoulos |
| CN103806091A (en) * | 2014-02-26 | 2014-05-21 | 闽能光电集团有限公司 | Automatic control method for sapphire crystals in edge-defined film-fed growth |
| CN104180925A (en) * | 2014-07-31 | 2014-12-03 | 成都东骏激光股份有限公司 | Temperature measuring method via displacement |
| CN104180927A (en) * | 2014-08-28 | 2014-12-03 | 洛阳市西格马炉业有限公司 | Measurement platform and measurement method for standard temperature of super-high-temperature hearth |
| CN104180927B (en) * | 2014-08-28 | 2017-04-12 | 洛阳西格马炉业股份有限公司 | Measurement platform and measurement method for standard temperature of super-high-temperature hearth |
| CN106757317A (en) * | 2016-11-25 | 2017-05-31 | 中国科学院长春应用化学研究所 | Rare earth crystal growth equipment, rare earth crystal growth technique and application |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Nan Inventor after: Zhao Qing Inventor after: Jia Jianguo Inventor before: Liang Zhian |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LIANG ZHIAN TO: WANG NAN ZHAO QING JIA JIANGUO |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110601 Termination date: 20131108 |