CN201842886U - 钽溅射环 - Google Patents
钽溅射环 Download PDFInfo
- Publication number
- CN201842886U CN201842886U CN2010205239656U CN201020523965U CN201842886U CN 201842886 U CN201842886 U CN 201842886U CN 2010205239656 U CN2010205239656 U CN 2010205239656U CN 201020523965 U CN201020523965 U CN 201020523965U CN 201842886 U CN201842886 U CN 201842886U
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- China
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- decorative pattern
- utility
- model
- tantalum
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 49
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000004544 sputter deposition Methods 0.000 title abstract description 13
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 150000003481 tantalum Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 239000013077 target material Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000003245 working effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 SOI).In addition Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
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Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010205239656U CN201842886U (zh) | 2010-09-08 | 2010-09-08 | 钽溅射环 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010205239656U CN201842886U (zh) | 2010-09-08 | 2010-09-08 | 钽溅射环 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201842886U true CN201842886U (zh) | 2011-05-25 |
Family
ID=44037781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010205239656U Expired - Lifetime CN201842886U (zh) | 2010-09-08 | 2010-09-08 | 钽溅射环 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201842886U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110225996A (zh) * | 2017-01-20 | 2019-09-10 | 霍尼韦尔国际公司 | 用于溅射线圈的颗粒捕集器及其制造方法 |
CN111328351A (zh) * | 2017-10-11 | 2020-06-23 | 霍尼韦尔国际公司 | 多图案化的溅射捕集器及制造方法 |
-
2010
- 2010-09-08 CN CN2010205239656U patent/CN201842886U/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110225996A (zh) * | 2017-01-20 | 2019-09-10 | 霍尼韦尔国际公司 | 用于溅射线圈的颗粒捕集器及其制造方法 |
JP2020507674A (ja) * | 2017-01-20 | 2020-03-12 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | スパッタリングコイル用粒子トラップ及び製造方法 |
EP3571328A4 (en) * | 2017-01-20 | 2020-09-30 | Honeywell International Inc. | PARTICLE TRAP FOR SPRAY COIL AND MANUFACTURING PROCESSES |
CN111328351A (zh) * | 2017-10-11 | 2020-06-23 | 霍尼韦尔国际公司 | 多图案化的溅射捕集器及制造方法 |
EP3695025A4 (en) * | 2017-10-11 | 2021-04-21 | Honeywell International Inc. | MULTI-PATTERNED CATHODIC SPRAY TRAPS AND METHODS OF MANUFACTURING |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
CN111328351B (zh) * | 2017-10-11 | 2023-05-16 | 霍尼韦尔国际公司 | 多图案化的溅射捕集器及制造方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Component of tantalum sputtering ring Effective date of registration: 20121113 Granted publication date: 20110525 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2012990000688 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20131206 Granted publication date: 20110525 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2012990000688 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Component of tantalum sputtering ring Effective date of registration: 20131220 Granted publication date: 20110525 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2013990001013 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 315400, No. 198, Mount Ann Road, state science and Technology Industrial Park, Yuyao Economic Development Zone, Zhejiang Patentee after: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Address before: 315400, No. 198, Mount Ann Road, state science and Technology Industrial Park, Yuyao Economic Development Zone, Zhejiang Patentee before: Ningbo Jiangfeng Electronic Materials Co., Ltd. |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20131206 Granted publication date: 20110525 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2012990000688 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170505 Granted publication date: 20110525 Pledgee: Export Import Bank of China Pledgor: Ningbo Jiangfeng Electronic Materials Co., Ltd. Registration number: 2013990001013 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Component of tantalum sputtering ring Effective date of registration: 20170510 Granted publication date: 20110525 Pledgee: Bank of China Limited by Share Ltd Yuyao branch Pledgor: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Registration number: 2017330000038 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180316 Granted publication date: 20110525 Pledgee: Bank of China Limited by Share Ltd Yuyao branch Pledgor: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Registration number: 2017330000038 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Component of tantalum sputtering ring Effective date of registration: 20180320 Granted publication date: 20110525 Pledgee: Bank of China Limited by Share Ltd Yuyao branch Pledgor: NINGBO JIANGFENG ELECTRONIC MATERIAL CO., LTD. Registration number: 2018330000064 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20200825 Granted publication date: 20110525 Pledgee: Bank of China Limited by Share Ltd. Yuyao branch Pledgor: KONFOONG MATERIALS INTERNATIONAL Co.,Ltd. Registration number: 2018330000064 |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20110525 |