CN201812814U - 一种用于防止二极管芯片漂移的整流器 - Google Patents
一种用于防止二极管芯片漂移的整流器 Download PDFInfo
- Publication number
- CN201812814U CN201812814U CN2010202717209U CN201020271720U CN201812814U CN 201812814 U CN201812814 U CN 201812814U CN 2010202717209 U CN2010202717209 U CN 2010202717209U CN 201020271720 U CN201020271720 U CN 201020271720U CN 201812814 U CN201812814 U CN 201812814U
- Authority
- CN
- China
- Prior art keywords
- diode chip
- lead frame
- rectifier
- groove
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/8434—Bonding interfaces of the connector
- H01L2224/84345—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92246—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
一种用于防止二极管芯片漂移的整流器,该整流器的环氧封装体内部由连接片、引线框、二极管芯片组成,该引线框的焊接区与所述二极管芯片之间通过焊锡膏连接;所述引线框的焊接区上表面设有凹槽,该凹槽区域大于所述二极管芯片,所述焊锡膏位于该凹槽内,所述二极管芯片位于所述凹槽内并通过所述焊锡膏与引线框的焊接区连接。该整流器可防止焊接过程中焊锡融融状态时二极管芯片的漂移问题,并可对二极管芯片限位。
Description
技术领域
本实用新型涉及一种整流器,尤其涉及一种用于防止二极管芯片漂移的整流器。
背景技术
整流器是利用二极管的单向导电特性对交流电进行整流,故被广泛应用于交流电转换成直流电的电路中。现有整流器二极管晶粒的引线框的焊接区域常见结构为平面结构。引线框的焊接区域涂点焊锡膏,放上二极管晶粒之后,在入炉焊接过程中锡膏处于融融状态,焊接后二极管晶粒的位置偏移难以准确控制。因此如何解决现有锡膏焊接过程中二极管晶粒漂移的问题,是本实用新型研究的问题。
发明内容
本实用新型提供一种用于防止二极管芯片漂移的整流器,该整流器可防止焊接过程中焊锡融融状态时二极管芯片的漂移问题,并可对二极管芯片限位。
为达到上述目的,本实用新型采用的技术方案是:
一种用于防止二极管芯片漂移的整流器,该整流器的环氧封装体内部由连接片、引线框、二极管芯片组成,该引线框的焊接区与所述二极管芯片之间通过焊锡膏连接;所述引线框的焊接区上表面设有凹槽,该凹槽区域大于所述二极管芯片,所述焊锡膏位于该凹槽内,所述二极管芯片位于所述凹槽内并通过所述焊锡膏与引线框的焊接区连接。
由于上述技术方案运用,本实用新型与现有技术相比具有下列优点:
本实用新型是一种用于防止二极管芯片漂移的整流器,该整流器引线框的焊接区凹槽边缘四周设计有防护墙,引线框的焊接区凹槽尺寸略大于二极管芯片尺寸,从而可利用凹槽对芯片和锡膏限位。焊接过程中锡膏和二极管芯片受到保护墙的约束,可显著减少芯片焊接的偏移量。
附图说明
附图1为现有引线框结构;
附图2为本实用性新型整流器结构示意图;
附图3为本实用性新型引线框结构示意图。
以上附图中:1、连接片;2、引线框;3、二极管芯片;4、焊接区;5、焊锡膏;6、电流传输端;7、凹槽。
具体实施方式
下面结合附图及实施例对本实用新型作进一步描述:
实施例:一种用于防止二极管芯片漂移的整流器,
该整流器的环氧封装体内部主要由连接片1、引线框2、二极管芯片3组成,该引线框2一端的焊接区4与所述二极管芯片3之间通过焊锡膏5连接,该引线框2另一端是作为所述整流器的电流传输端6;其特征在于:所述引线框2的焊接区4上表面设有凹槽7,该凹槽7区域大于所述二极管芯片3,所述焊锡膏5位于该凹槽7内,所述二极管芯片3位于所述凹槽7内并通过所述焊锡膏5与引线框2的焊接区连接。
上述实施例只为说明本实用新型的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施,并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰,都应涵盖在本实用新型的保护范围之内。
Claims (1)
1.一种用于防止二极管芯片漂移的整流器,该整流器的环氧封装体内部主要由连接片(1)、引线框(2)、二极管芯片(3)组成,该引线框(2)一端的焊接区(4)与所述二极管芯片(3)之间通过焊锡膏(5)连接,该引线框(2)另一端是作为所述整流器的电流传输端(6);其特征在于:所述引线框(2)的焊接区(4)上表面设有凹槽(7),该凹槽(7)区域大于所述二极管芯片(3),所述焊锡膏(5)位于该凹槽(7)内,所述二极管芯片(3)位于所述凹槽(7)内并通过所述焊锡膏(5)与引线框(2)的焊接区连接。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010202717209U CN201812814U (zh) | 2010-07-27 | 2010-07-27 | 一种用于防止二极管芯片漂移的整流器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010202717209U CN201812814U (zh) | 2010-07-27 | 2010-07-27 | 一种用于防止二极管芯片漂移的整流器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN201812814U true CN201812814U (zh) | 2011-04-27 |
Family
ID=43895753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010202717209U Expired - Fee Related CN201812814U (zh) | 2010-07-27 | 2010-07-27 | 一种用于防止二极管芯片漂移的整流器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN201812814U (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449539A (zh) * | 2013-02-01 | 2017-02-22 | 苏州固锝电子股份有限公司 | 防偏位贴片式半导体器件结构 |
CN106471631A (zh) * | 2014-06-18 | 2017-03-01 | Lg伊诺特有限公司 | 发光器件封装 |
-
2010
- 2010-07-27 CN CN2010202717209U patent/CN201812814U/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449539A (zh) * | 2013-02-01 | 2017-02-22 | 苏州固锝电子股份有限公司 | 防偏位贴片式半导体器件结构 |
CN106449540A (zh) * | 2013-02-01 | 2017-02-22 | 苏州固锝电子股份有限公司 | 高可靠性贴片式整流芯片 |
CN106449538A (zh) * | 2013-02-01 | 2017-02-22 | 苏州固锝电子股份有限公司 | 贴片式整流器件结构 |
CN106449538B (zh) * | 2013-02-01 | 2019-07-02 | 苏州固锝电子股份有限公司 | 贴片式整流器件结构 |
CN106449540B (zh) * | 2013-02-01 | 2019-07-02 | 苏州固锝电子股份有限公司 | 贴片式整流芯片 |
CN106449539B (zh) * | 2013-02-01 | 2019-08-02 | 苏州固锝电子股份有限公司 | 防偏位贴片式半导体器件结构 |
CN106471631A (zh) * | 2014-06-18 | 2017-03-01 | Lg伊诺特有限公司 | 发光器件封装 |
CN106471631B (zh) * | 2014-06-18 | 2018-12-18 | Lg伊诺特有限公司 | 发光器件封装 |
US10396247B2 (en) | 2014-06-18 | 2019-08-27 | Lg Innotek Co., Ltd. | Light-emitting device package |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108461459A (zh) | 一种负极对接双向整流二极管及其制造工艺 | |
CN201812814U (zh) | 一种用于防止二极管芯片漂移的整流器 | |
CN201750347U (zh) | 一种二极管整流器 | |
CN201812815U (zh) | 一种防止晶粒漂移的整流器 | |
CN205289994U (zh) | 一种太阳能晶硅电池片焊接专用烙铁头 | |
CN202678303U (zh) | 一种引线框架 | |
CN203367267U (zh) | 自适应焊料用量的整流器结构 | |
CN101937898A (zh) | 一种用于防潮的整流器结构 | |
CN203367266U (zh) | 用于缓冲芯片表面焊料用量的封装结构 | |
CN103383932A (zh) | 用于提高芯片电性能的封装结构 | |
CN208538848U (zh) | 整流芯片的封装结构 | |
CN201681826U (zh) | 一种应用于电路板的表面贴装式整流器 | |
CN208127189U (zh) | 一种负极对接双向整流二极管 | |
CN203393084U (zh) | 石墨导热散热胶带 | |
CN208538849U (zh) | 高可靠性整流器件 | |
CN201655799U (zh) | 一种具有引脚结构的薄型桥式整流器 | |
CN202405249U (zh) | 一种硅塑封稳压二极管 | |
CN203733805U (zh) | 低功耗整流器件 | |
CN202257646U (zh) | 一种内置tsop存储ic的封装结构 | |
CN202871863U (zh) | 铝线或铝合金线连接的表面贴装式发光二极管器件 | |
CN201655795U (zh) | 一种应用于电路板的薄型桥式整流器 | |
CN204577418U (zh) | 一种半导体芯片封装用的功率模块端子 | |
CN201892159U (zh) | Led灯板 | |
CN204315624U (zh) | 一种倒装芯片支架 | |
CN202103055U (zh) | 10安培硅整流二极管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110427 Termination date: 20180727 |
|
CF01 | Termination of patent right due to non-payment of annual fee |