CN201768554U - Fluorine surface etching liquid production device for semiconductors - Google Patents
Fluorine surface etching liquid production device for semiconductors Download PDFInfo
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- CN201768554U CN201768554U CN2010202508519U CN201020250851U CN201768554U CN 201768554 U CN201768554 U CN 201768554U CN 2010202508519 U CN2010202508519 U CN 2010202508519U CN 201020250851 U CN201020250851 U CN 201020250851U CN 201768554 U CN201768554 U CN 201768554U
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Abstract
The utility model relates to a fluorine surface etching liquid production device for semiconductors, which is characterized by comprising a hydrofluoric acid storage tank (1), a buffering agent storage tank (2), a first mixing tank (3), a nitric acid storage tank (4), a stabilizing agent storage tank (5), a second mixing tank (6), a deionized water storage tank (7), a third mixing tank (8), a filter (9) and a finished product tank (10). Hydrofluoric acid is sufficiently and evenly mixed with buffering agent in the first mixing tank of the fluorine surface etching liquid production device, and nitric acid and stabilizing agent are sufficiently and evenly mixed in the second mixing tank, then enter the third mixing tank for mixing and are packaged after filtration. The fluorine surface etching liquid production device has the advantages of fine scattering and mixing uniformity, fine operation safety and less impurity content of products.
Description
(1) technical field
The utility model relates to a kind of fluorine surface etchant for semiconductor process units, belongs to electronic chemical product production equipment technical field.
(2) background technology
Wet chemical etch is made one of the most common pattern technology of Chinese style at semiconductor.Mother's the moment, also kind was more various, but it is less relatively to be exclusively used in semi-conductive etching solution.Stability, hachure etched smoothness and the aspect such as precision, product percent of pass of etching solution in etching remains defective.For guaranteeing its stability and etched smoothness and precision, hydrofluoric acid, nitric acid strong acid in etching solution need to add certain stabilizing agent and buffer.And the conventional device that the each component in the etching solution is mixed together in same container, its scattered mixed performance is poor, and the etching solution impurity content is many, and the bigger potential safety hazard of the direct blend existence of multiple strong acid, can not satisfy user demand.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of and disperses that Combination is good, impurity content is few, the fluorine surface etchant for semiconductor process units of handling safety.
The purpose of this utility model is achieved in that a kind of fluorine surface etchant for semiconductor process units, it is characterized in that: it comprises hydrofluoric acid storage tank, buffer storage tank, first blending tank, nitric acid storage tank, stabilizing agent storage tank, second blending tank, deionized water storage tank, the 3rd blending tank, filter and finished product jar;
Described hydrofluoric acid storage tank is connected with the first blending tank import respectively with the buffer storage tank;
Described nitric acid storage tank is connected with the second blending tank import respectively with the stabilizing agent storage tank;
Outlet is connected with the 3rd blending tank import respectively described first blending tank with second blending tank, also is connected with the deionized water storage tank in described the 3rd blending tank import;
Described the 3rd blending tank outlet is connected with filter inlet, and described filter outlet is connected with the finished product jar;
Be equipped with agitator in described first blending tank, second blending tank and the 3rd blending tank.
Described first blending tank, second blending tank and the 3rd blending tank inwall are polytetrafluoroethylene (PTFE).
Compared with prior art, the beneficial effects of the utility model are:
The utility model fluorine surface etchant for semiconductor process units, hydrofluoric acid and buffer are fully mixed in first blending tank, after nitric acid and stabilizing agent fully mixed in second blending tank, enter again in the 3rd blending tank and mix, filter the back encapsulation.It disperses to mix all sexual good and good operation safety, and the product impurity content is few.
(4) description of drawings
Fig. 1 is the structural representation of the utility model fluorine surface etchant for semiconductor process units.
Wherein:
Hydrofluoric acid storage tank 1, buffer storage tank 2, first blending tank 3, nitric acid storage tank 4, stabilizing agent storage tank 5, second blending tank 6, deionized water storage tank 7, the 3rd blending tank 8, filter 9, finished product jar 10.
(5) specific embodiment
Referring to Fig. 1, a kind of fluorine surface etchant for semiconductor process units that the utility model relates to, mainly form by hydrofluoric acid storage tank 1, buffer storage tank 2, first blending tank 3, nitric acid storage tank 4, stabilizing agent storage tank 5, second blending tank 6, deionized water storage tank 7, the 3rd blending tank 8, filter 9 and finished product jar 10
Described hydrofluoric acid storage tank 1 is connected with 3 imports of first blending tank respectively with buffer storage tank 2;
Described nitric acid storage tank 4 is connected with 6 imports of second blending tank respectively with stabilizing agent storage tank 5;
6 outlets are connected with 8 imports of the 3rd blending tank respectively described first blending tank 3 with second blending tank, also are connected with deionized water storage tank 7 in 8 imports of described the 3rd blending tank;
8 outlets of described the 3rd blending tank are connected with filter 9 imports, and described filter 9 outlets are connected with finished product jar 10.
Described first blending tank 3, second blending tank 6 and the 3rd blending tank 8 inwalls are polytetrafluoroethylene (PTFE);
Be equipped with agitator in described first blending tank 3, second blending tank 6 and the 3rd blending tank 8.
Described buffer storage tank 2 is the ammonium fluoride storage tank.
Described stabilizing agent storage tank 5 is glacial acetic acid storage tank or hydrochloric acid tank.
Claims (2)
1. fluorine surface etchant for semiconductor process units, it is characterized in that: it comprises hydrofluoric acid storage tank (1), buffer storage tank (2), first blending tank (3), nitric acid storage tank (4), stabilizing agent storage tank (5), second blending tank (6), deionized water storage tank (7), the 3rd blending tank (8), filter (9) and finished product jar (10);
Described hydrofluoric acid storage tank (1) is connected with first blending tank (3) import respectively with buffer storage tank (2);
Described nitric acid storage tank (4) is connected with second blending tank (6) import respectively with stabilizing agent storage tank (5);
Outlet is connected with the 3rd blending tank (8) import respectively described first blending tank (3) with second blending tank (6), also is connected with deionized water storage tank (7) in described the 3rd blending tank (8) import;
Described the 3rd blending tank (8) outlet is connected with filter (9) import, and described filter (9) outlet is connected with finished product jar (10); Be equipped with agitator in described first blending tank (3), second blending tank (6) and the 3rd blending tank (8).
2. a kind of fluorine surface etchant for semiconductor process units according to claim 1 is characterized in that: described first blending tank (3), second blending tank (6) and the 3rd blending tank (8) inwall are polytetrafluoroethylene (PTFE).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202508519U CN201768554U (en) | 2010-07-01 | 2010-07-01 | Fluorine surface etching liquid production device for semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202508519U CN201768554U (en) | 2010-07-01 | 2010-07-01 | Fluorine surface etching liquid production device for semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201768554U true CN201768554U (en) | 2011-03-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202508519U Expired - Fee Related CN201768554U (en) | 2010-07-01 | 2010-07-01 | Fluorine surface etching liquid production device for semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201768554U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111996532A (en) * | 2020-08-25 | 2020-11-27 | 福建天甫电子材料有限公司 | Preparation device and preparation process for electronic-grade aluminum etching solution |
-
2010
- 2010-07-01 CN CN2010202508519U patent/CN201768554U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111996532A (en) * | 2020-08-25 | 2020-11-27 | 福建天甫电子材料有限公司 | Preparation device and preparation process for electronic-grade aluminum etching solution |
| CN111996532B (en) * | 2020-08-25 | 2022-06-21 | 福建天甫电子材料有限公司 | Preparation device and preparation process for electronic-grade aluminum etching liquid |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 214423, No. 1, Changqing North Road, Jiangyin Industrial Park, Zhouzhuang Town, Jiangsu, China Patentee after: Jiangyin Runma Electronic Material Co., Ltd. Address before: 214423, No. 1, Changqing North Road, Jiangyin Industrial Park, Zhouzhuang Town, Jiangsu, China Patentee before: Jiangyin Runma Electronic Material Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110323 Termination date: 20180701 |