CN201713324U - Technological crucible device for polysilicon growth - Google Patents
Technological crucible device for polysilicon growth Download PDFInfo
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- CN201713324U CN201713324U CN200920147954XU CN200920147954U CN201713324U CN 201713324 U CN201713324 U CN 201713324U CN 200920147954X U CN200920147954X U CN 200920147954XU CN 200920147954 U CN200920147954 U CN 200920147954U CN 201713324 U CN201713324 U CN 201713324U
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- crucible
- polysilicon
- highly pure
- square
- technology
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Abstract
The utility model pertains to a technological crucible device of equipment, which utilizes directional solidification technology for growing polysilicon. The core point is as follows: a square highly pure graphite crucible is adopted instead of the existing commonly used square highly pure quartz crucible. The highly pure quartz crucible is formed by processing a whole-piece graphite blank, and relevant technical design is attached (see the drawing). Si3N4, SiO/SiN or other material is coated on the inner surface of the crucible and is solidified at high temperature. The square highly pure graphite crucible can be used repeatedly in a directional growing and solidifying furnace of polysilicon, and can greatly reduce the production cost of polysilicon ingots, thus reducing the price of silicon wafers and further utilizing the silicon wafers for the development of photovoltaic industry.
Description
Technical field
The invention belongs to a kind of technology crucible device in the directional solidification technique growing polycrystalline silicon equipment that utilizes.
Background technology
Traditional polysilicon directional freezing growth furnace crucible adopts square high-purity silica pot, and crucible is an expendable part, can not recirculation use, and promptly each stove polysilicon needs a crucible.When the preparation casting polycrystalline silicon, in the starting material fusing, in the crystalline silicon crystallisation process, silicon melt and quartz crucible Long contact time can produce viscous effect.Because both thermal expansivity differences cause crystalline silicon or quartz crucible to break when crystal cools off probably; And, can cause the corrosion of quartz crucible because silicon melt and quartz crucible Long contact time are the same with the preparation pulling of silicon single crystal, make that the oxygen concn in the polysilicon raises, thereby influence the silicon chip quality.Be head it off, general using Si on the technology
3N
4, SiO/SiN or other materials are attached to the inwall of quartz crucible as coating, thereby isolate silicon melt and the direct of quartz crucible contacts, and solving viscous problem, and can reduce impurity concentrations such as oxygen in the polysilicon, carbon.Crucible adopts above way in the polycrystalline silicon casting ingot process at present, is a kind of technology of widespread usage, and shortcoming is crucible of a stove, and crucible is pure running stores, and the cost height is unfavorable for reducing the silicon chip cost.
Summary of the invention
By test, we adopt square high purity graphite crucible to substitute the square high-purity silica pot that adopts usually at present, and the high purity graphite crucible adopts monoblock graphite blank to process, and is aided with relevant technological design (seeing accompanying drawing) and carries out internal surface Si
3N
4, SiO/SiN or other materials spraying form complete square high purity graphite crucible, can in polycrystalline growth technology, be repeatedly used, can reuse 40～50 stoves at present, reduce the use of high-purity silica pot, greatly reduce the growth cost of polycrystalline silicon ingot casting.
The high purity graphite crucible is because its heatproof height, and thermal conduction is good, has stronger rigidity at 600～1700 ℃, so be reasonable selection with the high purity graphite crucible as the heating container of polycrystalline silicon material.Because polycrystalline silicon material has stronger cold rising property, general silicon materials expand when solidifying can reach 9%.Calculate and check so will carry out intensity to graphite body, graphite wall will keep certain gradient to be beneficial to the expansion and the demoulding simultaneously.
In addition because polycrystalline silicon material, can be subjected to carbon oxygen contamination and metallic impurity if directly contact with the high purity graphite crucible pollutes, thereby influence the silicon chip quality, thus when process implementing use coating Si
3N
4, SiO/SiN or other materials apply, and make molten silicon and plumbago crucible realize physical isolation.
Advantage of the present invention be by use carry out high purity graphite crucible that internal surface applies go forward side by side the line correlation technological design can reusable purpose to reach crucible, thereby reduce the polycrystalline silicon growth cost greatly.
Description of drawings
Accompanying drawing 1 is the crucible device for polycrystalline silicon growth process structural front view of the embodiment of the invention;
Accompanying drawing 2 is the crucible device for polycrystalline silicon growth process structure vertical view of the embodiment of the invention.
Embodiment
Shown in attached Fig. 1 and 2,, select the crucible of appropriate size to carry out technological design according to the size of polysilicon directional freezing growth furnace institute growing silicon ingot, select the large-scale blank of high purity graphite, carry out integral body processing and see that accompanying drawing, the plumbago crucible after the processing carry out the internal surface spraying, select Si
3N
4, SiO/SiN or other materials.Crucible after the coating is put into special sintering furnace and is carried out high bake curing, before the blow-on of stand-by polysilicon directional freezing growth furnace, crucible is taken out from sintering oven, and check is after coated surface is as good as, and will pack polycrystalline silicon raw material and it is delivered to polycrystalline silicon oriented growth stove burner hearth in the crucible into.After a growth cycle finishes, take out crucible, keep somewhere the polysilicon silicon ingot behind the inverted curcible and remove crucible, send into next loop cycle and use.Crucible can be reused, thereby reduces polycrystal silicon ingot growth cost.
Claims (4)
1. technology crucible device in the polysilicon directional freezing growth furnace is made up of coat in square or the whole plumbago crucible of rectangle, the crucible, and described crucible undercoat covers on the described plumbago crucible inwall.
2. by technology crucible device in the described polysilicon directional freezing growth furnace of claim 1, it is characterized in that described crucible material is high-purity or ordinary purity graphite, the whole processing and fabricating of square or rectangle.
3. by technology crucible device in the described polysilicon directional freezing growth furnace of claim 1, it is characterized in that the crucible chamber body has 0～15 ° with interior gradient.
4. by technology crucible device in the described polysilicon directional freezing growth furnace of claim 1, it is characterized in that, carry out the undercoat protection in the crucible, adopt Si
3N
4Or the SiO/SiN material, and only be sprayed at the internal surface of high purity graphite crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920147954XU CN201713324U (en) | 2009-04-01 | 2009-04-01 | Technological crucible device for polysilicon growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920147954XU CN201713324U (en) | 2009-04-01 | 2009-04-01 | Technological crucible device for polysilicon growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201713324U true CN201713324U (en) | 2011-01-19 |
Family
ID=43459324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920147954XU Expired - Lifetime CN201713324U (en) | 2009-04-01 | 2009-04-01 | Technological crucible device for polysilicon growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201713324U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482632A (en) * | 2013-09-16 | 2014-01-01 | 青岛隆盛晶硅科技有限公司 | Combined type crucible applied to directional solidification and purification of polycrystalline silicon |
-
2009
- 2009-04-01 CN CN200920147954XU patent/CN201713324U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482632A (en) * | 2013-09-16 | 2014-01-01 | 青岛隆盛晶硅科技有限公司 | Combined type crucible applied to directional solidification and purification of polycrystalline silicon |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| DD01 | Delivery of document by public notice |
Addressee: Zhang Wenhui Document name: Notification that Application Deemed to be Withdrawn |
|
| DD01 | Delivery of document by public notice |
Addressee: Zhang Wenhui Document name: Notification of Passing Examination on Formalities |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110119 |
|
| CX01 | Expiry of patent term |