CN201699035U - Quantum-well infrared detector - Google Patents
Quantum-well infrared detector Download PDFInfo
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- CN201699035U CN201699035U CN2010201872071U CN201020187207U CN201699035U CN 201699035 U CN201699035 U CN 201699035U CN 2010201872071 U CN2010201872071 U CN 2010201872071U CN 201020187207 U CN201020187207 U CN 201020187207U CN 201699035 U CN201699035 U CN 201699035U
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- infrared detector
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- layer
- quantum trap
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Abstract
The utility model discloses a quantum-well infrared detector, which adopts a GaAs/AlxGa1-xAs material system, grows by utilizing an MBE or MOCVD technology and is prepared through a standard semiconductor process. The thickness of a quantum-well structural GaAs potential well layer of the utility model is 15 to 20 times of that of an AlxGa1-xAs barrier layer, the thickness of one period of a multi-quantum-well layer is 80 to 120nm, and the period number of the multi-quantum-well layer is 15 to 20, so that the detector can work in the state of room temperature or quasi-room temperature, the absorption coefficient reaches more than 30 percent, and the effective inhibition for dark current is realized, thereby the device noise is greatly reduced, the detector can reach or be approximate to a theoretical limit value, the response speed is higher than 1GHz, and the highest response speed can reach 100GHz.
Description
Technical field
The utility model relates to a kind of semiconductor infrared electro device, is specifically related to a kind of quantum trap infrared detector (Quantum Well Infrared Photodetectors abbreviates QWIP as).
Background technology
In infraredly tellurium indium (InSb) Infrared Detectors is arranged to the comparatively ripe Conventional detectors of far infrared band development, and mercury cadmium telluride (HgCdTe) Infrared Detectors.The most in the last thirty years, along with the development of low-dimensional materials technology, this new technology of quantum trap infrared detector occurred, and be rapidly developed and extensive use.Compare with other infrared techniques, quantum trap infrared detector has that response speed is fast, detectivity is high, survey wavelength transfers, advantages such as radiation resistance is strong, and can use the growth of molecular beam epitaxy technique (MBE) or metal organic chemical vapor deposition advanced technologies such as (MOCVD), make high-quality, large tracts of land, detector array that uniformity is strong easily.In used various materials, GaAs/gallium aluminium arsenic (GaAs/Al
xGa
1-xAs) material is to be most widely used, and technology is the most ripe.It just has a lot of good characteristics, and is big as electron mobility height, energy gap, have a band structure of direct transition.Developed into the technology of comparative maturity at present based on the quantum trap infrared detector of GaAs, people have utilized it to realize that centering, far infrared are so that the covering in each zones such as Terahertz.
At present, the main flow Infrared Detectors of mid and far infrared wave band, comprise that InSb Infrared Detectors, HgCdTe Infrared Detectors, quantum trap infrared detector all work (being usually less than 100K) at low temperatures, need by Dewar container for liquefied nitrogen or circularly cooling mechanism coldly, seriously limited their extensive use.In addition, along with development of science and technology, people have also proposed very high requirement to the response speed of detector.Putting before this, a kind of room temperature or accurate working and room temperature be badly in need of to occur, possess the very Infrared Detectors of high absorption coefficient and very fast-response speed.
The utility model content
Technical problem to be solved in the utility model provides a kind of quantum trap infrared detector, and it can be at room temperature or accurate working and room temperature, and possesses very high absorption coefficient and very fast response speed.
In order to solve above technical problem, the utility model provides a kind of quantum trap infrared detector, comprising: the GaAs substrate layer, on described GaAs substrate layer, successively grow successively by molecular beam epitaxy technique or metal organic chemical vapor deposition:
Unadulterated GaAs resilient coating;
The GaAs lower electrode layer that the n type mixes;
The multiple quantum well layer that a plurality of cycles of potential well alternating growth form after elder generation's potential barrier;
Al
xGa
1-xThe As barrier layer;
The GaAs upper electrode layer that the n type mixes;
Wherein, described multiple quantum well layer, each cycle comprises an Al
xGa
1-xAs barrier layer and a GaAs potential well layer, described Al
xGa
1-xThe thickness of As barrier layer is 15～20 times of thickness of described GaAs potential well layer, and the thickness of described multiple quantum well layer one-period is 80～120nm, and the periodicity of described multiple quantum well layer is 15～20.
Preferably, described GaAs potential well layer carries out the n type and mixes, and institute's doping is a silicon, and its doping content is higher than 1 * 10
18Cm
-3
Preferably, described barrier height is by Al
xGa
1-xAl component x decision among the As, the scope of x is 0.1～0.5.
Preferably, described quantum trap infrared detector belongs to bound state to continuous state or quasi-continuous attitude transition type quantum trap infrared detector.
Preferably, described quantum trap infrared detector adopts band gap structure.
Preferably, the working temperature of described quantum trap infrared detector is higher than 200K.
The utlity model has following advantage:
1. quantum trap infrared detector of the present utility model can be worked under the condition of room temperature or accurate room temperature, and working temperature need not refrigeration plant or only needs the semiconductor thermoelectric refrigeration device to freeze greater than 200K.By contrast, conventional quantum trap infrared detector is usually operated at below the 100K, need be placed in Dewar or the circularly cooling machine.
2. quantum trap infrared detector of the present utility model possesses the very high absorption coefficient of light, and the absorption coefficient of light reaches more than 30% under room temperature or the accurate room temperature.
3. quantum trap infrared detector of the present utility model has been realized the effective inhibition to dark current, thereby reduced device noise greatly, improved detectivity, the detectivity under room temperature or accurate room temperature can reach or near theoretical boundary (background restriction detectivity).
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.
Fig. 1 is a quantum trap infrared detector structural representation of the present utility model;
Fig. 2 is a multiple quantum well layer structural representation among Fig. 1.
Embodiment
As depicted in figs. 1 and 2, the quantum trap infrared detector that the utility model proposed utilizes the GaAs material to be substrate 1, utilizes MBE or MOCVD technology successively to grow following sandwich construction:
(1) the unadulterated GaAs resilient coating 2 of one deck.
(2) the GaAs lower electrode layer 3 of n type doping, its thickness is 0.5～10 μ m, and institute's doping is silicon (Si), and its doping content is 0.5～5.0 * 10
18Cm
-3, for example make the Si doping content be about 1 * 10
18Cm
-3
(3) multiple quantum well layer 4 that a plurality of cycles of potential well alternating growth form after the first potential barrier, the periodicity of multiple quantum well layer 4 is 15～20.Wherein, each cycle comprises an Al
xGa
1-xAs barrier layer 41 and a GaAs potential well layer 42 carry out the n type and mix in the GaAs potential well layer 42, institute's doping is Si, and doping content satisfies or near the optimal condition of background limit temperature, its doping content is higher than 1 * 10
18Cm
-3(for example make the Si doping content be about 2 * 10
18Cm
-3).Potential well width, potential barrier thickness and barrier height are according to the infrared photon Frequency Design of being surveyed, Al
xGa
1-xThe thickness of As barrier layer 41 is 15～20 times of thickness of GaAs potential well layer 42, and the thickness of multiple quantum well layer 4 one-periods is 80～120nm, and barrier height is by Al
xGa
1-xAl component x decision among the As, the scope of x is 0.1～0.5.
(4) Al
xGa
1-xAs barrier layer 43;
(5) the GaAs top electrode layer 5, and its thickness is 0.5～10 μ m, and institute's doping is Si, and its doping content is 0.5～5.0 * 10
18Cm
-3, for example make the Si doping content be about 1 * 10
18Cm
-3
Quantum trap infrared detector belongs to bound state to continuous state or quasi-continuous attitude transition type quantum trap infrared detector.Quantum trap infrared detector adopts band gap structure.The working temperature of quantum trap infrared detector is higher than 200K.
The operation principle of quantum trap infrared detector of the present utility model is: with two kinds of different semi-conducting material (Al
xGa
1-xAs and GaAs) alternating growth forms the cycle epitaxial loayer, if these two kinds of materials have different band gap or band structure, what will take place at the heterogeneous interface place to be with is discontinuous.Very narrow in potential well, in the time of can comparing with electron wavelength,, can produce the splitted level of constraint in the potential well according to principle of quantum mechanics.When optical excitation, vertical transition forms photoelectric current to excitation state after the Electron absorption photon energy on the ground state under applying bias voltage, and collection and analysis by to photoelectric current can realize the detection to infrared light.The band gap of GaAs body material is little, forms potential well layer, and Al
xGa
1-xThe big formation barrier layer of the band gap of As body material.Al
xGa
1-xThe band gap of As increases with Al component x, and it is the band structure of cutting out quantum well that content that we can be by regulating Al component x and potential well width come the people, and according to test, the scope of preferred x is 0.1～0.5.
The thickness proportion height of the relative potential well layer of quantum trap infrared detector barrier layer of the present utility model, the photoelectric current of formation is big, and the thickness of the little total multiple quantum well layer of periodicity is not high, production technology is simple, can effectively realize infrared acquisition.
Claims (6)
1. quantum trap infrared detector comprises: the GaAs substrate layer, by molecular beam epitaxy technique or metal organic chemical vapor deposition growth successively successively on described GaAs substrate layer:
Unadulterated GaAs resilient coating;
The GaAs lower electrode layer that the n type mixes;
The multiple quantum well layer that a plurality of cycles of potential well alternating growth form after elder generation's potential barrier;
Al
xGa
1-xThe As barrier layer;
The GaAs upper electrode layer that the n type mixes;
It is characterized in that, described multiple quantum well layer, each cycle comprises an Al
xGa
1-xAs barrier layer and a GaAs potential well layer, described Al
xGa
1-xThe thickness of As barrier layer is 15～20 times of thickness of described GaAs potential well layer, and the thickness of described multiple quantum well layer one-period is 80～120nm, and the periodicity of described multiple quantum well layer is 15～20.
2. quantum trap infrared detector as claimed in claim 1 is characterized in that, described GaAs potential well layer carries out the n type and mixes, and institute's doping is a silicon, and its doping content is higher than 1 * 10
18Cm
-3
3. quantum trap infrared detector as claimed in claim 1 is characterized in that described barrier height is by Al
xGa
1-xAl component x decision among the As, the scope of x is 0.1～0.5.
4. quantum trap infrared detector as claimed in claim 1 is characterized in that, described quantum trap infrared detector belongs to bound state to continuous state or quasi-continuous attitude transition type quantum trap infrared detector.
5. quantum trap infrared detector as claimed in claim 1 is characterized in that, described quantum trap infrared detector adopts band gap structure.
6. quantum trap infrared detector as claimed in claim 1 is characterized in that the working temperature of described quantum trap infrared detector is higher than 200K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201872071U CN201699035U (en) | 2010-05-07 | 2010-05-07 | Quantum-well infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201872071U CN201699035U (en) | 2010-05-07 | 2010-05-07 | Quantum-well infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201699035U true CN201699035U (en) | 2011-01-05 |
Family
ID=43400281
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859808A (en) * | 2010-05-07 | 2010-10-13 | 无锡沃浦光电传感科技有限公司 | Quantum well infrared detector |
| CN103247675A (en) * | 2013-05-23 | 2013-08-14 | 哈尔滨工业大学 | Heterojunction triode with functions of photoelectric conversion and amplification |
| CN103367518A (en) * | 2012-03-31 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Surface plasmon coupling terahertz quantum well detector |
-
2010
- 2010-05-07 CN CN2010201872071U patent/CN201699035U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859808A (en) * | 2010-05-07 | 2010-10-13 | 无锡沃浦光电传感科技有限公司 | Quantum well infrared detector |
| CN103367518A (en) * | 2012-03-31 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Surface plasmon coupling terahertz quantum well detector |
| CN103247675A (en) * | 2013-05-23 | 2013-08-14 | 哈尔滨工业大学 | Heterojunction triode with functions of photoelectric conversion and amplification |
| CN103247675B (en) * | 2013-05-23 | 2016-07-13 | 哈尔滨工业大学 | Possesses the heterojunction triode of opto-electronic conversion and enlarging function |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110105 Termination date: 20130507 |