CN201663710U - High-precision semiconductor chip testing heater plate - Google Patents
High-precision semiconductor chip testing heater plate Download PDFInfo
- Publication number
- CN201663710U CN201663710U CN2010201411376U CN201020141137U CN201663710U CN 201663710 U CN201663710 U CN 201663710U CN 2010201411376 U CN2010201411376 U CN 2010201411376U CN 201020141137 U CN201020141137 U CN 201020141137U CN 201663710 U CN201663710 U CN 201663710U
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- semiconductor chip
- metallic plate
- chip testing
- thermocouple
- temperature
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Abstract
The utility model relates to a high-precision semiconductor chip testing heater plate, which comprises a metal plate, an electric stove wire, a temperature controller and a thermocouple. The metal plate is disposed above the electric stove wire, and the temperature controller is connected with the thermocouple disposed inside the metal plate. The high-precision semiconductor chip testing heater plate is characterized in that the electric stove wire is connected to a secondary stage of a pressure adjuster, a plurality of compensation electric heating tubes are respectively arranged inside mounting holes in lateral matching with the metal plate, and the temperature controller is connected with and controls all the compensation electric heating tubes. The high-precision semiconductor chip testing heater plate controls heating temperature by combination means of active heating and compensative heating, and has the advantages of high control precision, small temperature deviation and the like.
Description
Technical field
The utility model relates to semiconducter device testing equipment, particularly a kind of high-precision semiconductor chip testing hot plate.
Background technology
Power electronic technology is that the power application electronic device is realized multiple conversion and the control to electric energy, adopts the power electronic equipment of this technology manufacturing to realize function with light current control forceful electric power, has energy-conservation, consumption reduction, economizes material, improves with advantages such as electricity qualities.Therefore, power electronic technology is considered to new industry and the basis of rebuilding traditional industry.Power electronic device is the core and the key of power electronic technology, power electronic device needs to carry out strict parameter testing and screening in process of production, wherein a lot of parameters relate under certain high temperature tests, the height of temperature directly influences the data of test, and temperature controlled precision also largely influences the measuring accuracy of device parameters.Generally speaking, the power electronic device test is to test in constant temperature oven, and the test of semiconductor chip generally all is to be placed on the test hot plate to test because clamping trouble and quantity are big.
The general semiconductor chip testing hot plate of prior art is made up of metallic plate, electric furnace heating wire, thermostat and thermocouple.This metallic plate is placed on the electric furnace heating wire top, and metallic sheet material is generally copper or aluminium, and thermocouple is set in the metallic plate, and control the electric furnace circuit by thermostat and open and turn-off, reaching control metallic plate temperature, during application, the semiconductor chip that test is placed on the metallic plate of heating and tests.
But, because described general semiconductor chip testing hot plate is only by the opening and turn-off and control the metallic plate temperature of electric furnace heating wire power circuit, in actual applications, even the metallic plate temperature has reached set point, thermostat is power cutoff, the metallic plate temperature also will continue upper punch, can spend by overtemperature tens sometimes, even degree more than 20, therefore, it exists control precision low, and temperature deviation is big, is easy to shortcomings such as overtemperature.
Summary of the invention
The utility model provides a kind of high-precision semiconductor chip testing hot plate for solving the problem that above-mentioned existing semiconductor die testing hot plate exists, and makes its control precision height, and temperature deviation is little.
The technical scheme that the utility model addresses the above problem employing is: a kind of high-precision semiconductor chip testing hot plate, comprise metallic plate, electric furnace heating wire, thermostat and thermocouple, this metallic plate places the electric furnace heating wire top, thermostat is connected with thermocouple in being arranged at metallic plate, it is characterized in that: described electric furnace heating wire be connected on voltage regulator secondary on, some compensation electrothermal tubes are located at respectively in the installing hole of metallic plate side direction cooperation, and thermostat connects and control respectively compensates electrothermal tube.
Advantages such as the utility model has been owing to adopted main heating and compensation heating combination, heats by control compensation to reach accurate control test hot plate temperature, and its temperature deviation is no more than positive and negative 1 degree, has the control precision height, and temperature deviation is little.
Description of drawings
Fig. 1 is a common test hot plate structural representation.
Fig. 2 is a structural representation of the present utility model.
Embodiment
Accompanying drawing marking explanation: metallic plate 1, compensation electrothermal tube 2, thermocouple 3, thermostat 4, electric furnace heating wire 5, voltage regulator 6.
As shown in Figure 2, a kind of high-precision semiconductor chip testing hot plate, comprise metallic plate 1, electric furnace heating wire 5, thermostat 4 and thermocouple 3, described metallic plate 1 places electric furnace heating wire 5 tops of electric furnace pan, thermostat 4 is connected with thermocouple 3 in being arranged at metallic plate 1, described electric furnace heating wire 5 is connected on voltage regulator 6 secondary, and some compensation electrothermal tubes 2 are located at respectively in the installing hole that metallic plate 1 side direction cooperates, and thermostat 4 connects and control respectively compensates electrothermal tube 2.
Described metallic plate side direction can be provided with 6 installing holes that cooperate with electrothermal tube, and the compensation electrothermal tube 2 that is inserted in each installing hole all is electrically connected with the thermostat control end, and compensation electrothermal tube 2 can two two be connected in series again and receive thermostat 4 control end on.External power source connects thermostat, and compensation electrothermal tube 2 total heating powers are less than the heating power of electric furnace heating wire 5.
The material of described metallic plate 1 is copper or aluminium, the quantity of installing hole that metallic plate 1 side is provided with and compensation electrothermal tube 2 can require according to the uniformity coefficient of temperature to be provided with, generally can be uniform 6, compensation electrothermal tube 2 external end heads that insert the metallic plate installing hole are concordant with metallic plate 1 edge surface.The induction end of thermocouple 3 is put into metallic plate 1 corresponding hole, and the other end is connect in the thermocouple junction of thermostat by lead.
During the utility model work, set temperature, energized, the output voltage of voltage regulator is decided on height and hot plate size that temperature is set, can not be too high, should be lower several times than design temperature.The utility model part is basic heating, and another part is the compensation heating, and it is little wherein to compensate heating power, accurately control easily, and also the compensation heating is near from heating chip, and response is fast, so overshoot of temperature is little, deviation is little, the temperature control precision height.
The foregoing description is just to explanation of the present utility model, rather than to restriction of the present utility model, any innovation and creation that do not exceed in the utility model connotation scope all fall within the protection range of the present utility model.
Claims (1)
1. high-precision semiconductor chip testing hot plate, comprise metallic plate, electric furnace heating wire, thermostat and thermocouple, this metallic plate places the electric furnace heating wire top, thermostat is connected with thermocouple in being arranged at metallic plate, it is characterized in that: described electric furnace heating wire be connected on voltage regulator secondary on, some compensation electrothermal tubes are located at respectively in the installing hole of metallic plate side direction cooperation, and thermostat connects and control respectively compensates electrothermal tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201411376U CN201663710U (en) | 2010-03-22 | 2010-03-22 | High-precision semiconductor chip testing heater plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201411376U CN201663710U (en) | 2010-03-22 | 2010-03-22 | High-precision semiconductor chip testing heater plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201663710U true CN201663710U (en) | 2010-12-01 |
Family
ID=43234127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201411376U Expired - Fee Related CN201663710U (en) | 2010-03-22 | 2010-03-22 | High-precision semiconductor chip testing heater plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201663710U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108024392A (en) * | 2018-01-04 | 2018-05-11 | 承德福仁堂保健咨询服务有限公司 | A kind of device using semiconductor chip by internal heating stone material |
-
2010
- 2010-03-22 CN CN2010201411376U patent/CN201663710U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108024392A (en) * | 2018-01-04 | 2018-05-11 | 承德福仁堂保健咨询服务有限公司 | A kind of device using semiconductor chip by internal heating stone material |
| CN108024392B (en) * | 2018-01-04 | 2024-01-12 | 承德福仁堂保健咨询服务有限公司 | Device for heating stone material from inside by adopting semiconductor chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101201 Termination date: 20140322 |