The electromagnetic oven heat radiation structure
Technical field
The utility model relates to the small domestic appliance field, relates more specifically to a kind of electromagnetic oven heat radiation structure.
Background technology
In Modern Family's kitchen appliance, electromagnetic oven because of have quick heating, thermal efficiency height, the flames of anger, no flue dust, volume is small and exquisite, security good and characteristics such as good looking appearance, is subjected to liking of people.
Working principle of induction cooker is to utilize power device insulated gate bipolar transistor (Insulated GateBipolar Transistor, IGBT) switch produces alternating current, alternating current produces alternating magnetic field by the electromagnetism drum, alternating magnetic field produces the alternation induced-current in the pan bottom and forms eddy current, thereby makes the pan heating.Because IGBT frequently opens, IGBT can produce a large amount of heats raises the IGBT temperature, can cause the IGBT fault when surpassing to a certain degree.Simultaneously, another kind of power device---bridge piles up described electromagnetic oven and works long hours in current state following time, its caloric value also can be very big, can cause the PN junction temperature too high when heat surpasses to a certain degree, thereby cause the PN junction thermal breakdown and then described bridge heap is damaged.Therefore, must take certain radiating mode to lower the temperature, thereby prolong the service life of described electromagnetic oven with the service life of prolongation IGBT and bridge heap.
In the prior art, generally be in described electromagnetic oven, to install Aluminium Radiator additional and radiator fan comes forced heat radiation.Usually described IGBT and Qiao Dui are installed on the same radiator, the heat of described IGBT and bridge heap is delivered on the described radiator to finish the heat radiation process.But in the process of using electromagnetic oven, because the requirement of temperature rise requires one of them device (as IGBT) temperature lower, another device (Ru Qiaodui) temperature is higher sometimes.And described IGBT and Qiao Dui are installed on the same radiator, will cause the heat transmission between described IGBT and the bridge heap very fast, cause two temperature balances between the device easily, be difficult for the temperature rise requirement that reaches different.
Therefore, be necessary to provide a kind of improved radiator structure to overcome above-mentioned defective.
The utility model content
The purpose of this utility model provides a kind of electromagnetic oven heat radiation structure to avoid two heat transmission between the different power devices effectively, satisfies the temperature rise requirement of two different power devices simultaneously.
For achieving the above object, the utility model provides a kind of electromagnetic oven heat radiation structure, and described radiator structure is arranged in the drain pan of electromagnetic oven, is used for the insulated gate bipolar transistor and the Qiao Dui of described electromagnetic oven are dispelled the heat.Particularly, described radiator structure comprises first radiator and second radiator, described insulated gate bipolar transistor is removably mounted on described first radiator, described bridge heap is removably mounted on described second radiator, and described first radiator and second radiator are installed in the described drain pan.
Particularly, described first radiator and second radiator are positioned at same plane.
In a preferred embodiment of the present utility model, described first radiator and the second radiator compartment of terrain are installed in the described drain pan.Like this be arranged so that each other the influence when heat radiation of described first radiator and second radiator is less, the bridge on helping being installed in the insulated gate bipolar transistor on described first radiator more and being installed in described second radiator is piled the requirement that reaches different temperature rises.
Particularly, described first radiator and described second radiator include loading plate, offer installing hole on the described loading plate, be positioned on the described loading plate described installing hole around be distributed with a plurality of fin that are parallel to each other.
Preferably, described fin and described loading plate are vertical mutually and be integral structure.
Preferably, the area sum of the fin of described first radiator is different with the area sum of the fin of described second radiator.
In another preferred embodiment of the present utility model, described electromagnetic oven heat radiation structure also comprises the radiator that is installed in the described drain pan, described radiator and described first radiator and second radiator are positioned at same plane, and described radiator is made of heat sink in the form of sheets a plurality of and that be parallel to each other.
Compared with prior art, because electromagnetic oven heat radiation structure of the present utility model comprises first radiator and second radiator, described insulated gate bipolar transistor and bridge heap are removably mounted on respectively on described first radiator and second radiator, in heat radiation and temperature rise process, effectively avoided the heat transmission between described insulated gate bipolar transistor and the bridge heap, reach the requirement of different temperature rises easily, thereby the assurance electromagnetic oven is worked more effectively.
By following description also in conjunction with the accompanying drawings, it is more clear that the utility model will become, and these accompanying drawings are used to explain embodiment of the present utility model.
Description of drawings
Fig. 1 is equipped with the structural representation of first embodiment of the electromagnetic oven heat radiation structure of insulated gate bipolar transistor and bridge heap for the utility model.
Fig. 2 is the exploded view of Fig. 1.
Fig. 3 is equipped with the structural representation of second embodiment of the electromagnetic oven heat radiation structure of insulated gate bipolar transistor and bridge heap for the utility model.
Fig. 4 is the exploded view of Fig. 3.
The specific embodiment
With reference now to accompanying drawing, describe embodiment of the present utility model, the similar elements label is represented similar elements in the accompanying drawing.As mentioned above, the utility model provides a kind of electromagnetic oven heat radiation structure, because electromagnetic oven heat radiation structure of the present utility model comprises first radiator and second radiator, described insulated gate bipolar transistor and bridge heap are removably mounted on respectively on described first radiator and second radiator, in heat radiation and temperature rise process, effectively avoided the heat transmission between described insulated gate bipolar transistor and the bridge heap, reached the requirement of different temperature rises easily, thereby the assurance electromagnetic oven is more effectively worked.
The utility model provides a kind of electromagnetic oven heat radiation structure, and described radiator structure is arranged in the drain pan of electromagnetic oven, is used for the insulated gate bipolar transistor and the Qiao Dui of described electromagnetic oven are dispelled the heat.
Please refer to Fig. 1 and Fig. 2, described electromagnetic oven heat radiation structure comprises first radiator 20 and second radiator 22.Described insulated gate bipolar transistor 10 is removably mounted on described first radiator 20, and described bridge heap 12 is removably mounted on described second radiator 22, and described first radiator 20 and second radiator 22 are installed in the described drain pan (figure does not show).
In the present embodiment, described first radiator 20 and second radiator 22 are positioned at same plane, and the compartment of terrain is installed in the described drain pan.Like this be arranged so that each other the influence when heat radiation of described first radiator 20 and second radiator 22 is less, the bridge on helping being installed in the insulated gate bipolar transistor 10 on described first radiator 20 more and being installed in described second radiator 22 is piled 12 requirements that reach different temperature rises.
Particularly, as shown in Figure 2, described insulated gate bipolar transistor 10 comprises first pin 101 that a plurality of outside bendings are extended and is provided with first screw 102 that described first pin 101 inserts the circuit board of described electromagnetic oven.Described bridge heap 12 comprises second pin 121 that a plurality of outside bendings are extended and is provided with second screw 122 that described second pin 121 inserts the circuit board of described electromagnetic oven.
Particularly, described first radiator 20 comprises first loading plate 201, offer the first installing hole 201a on described first loading plate 201, be positioned on described first loading plate 201 the described first installing hole 201a around be distributed with a plurality of first fin 201b that are parallel to each other.The described first fin 201b is vertical mutually with described first loading plate 201 and be integral structure.In conjunction with Fig. 1 and Fig. 2, screw 40 passes described first screw 102 and the described first installing hole 201a is installed in described insulated gate bipolar transistor 10 on described first radiator 20.
Particularly, described second radiator 22 has second loading plate 221, offer the second installing hole 221a on described second loading plate 221, be positioned on described second loading plate 221 the described second installing hole 221a around be distributed with a plurality of second fin 221b that are parallel to each other.The described second fin 221b is vertical mutually with described second loading plate 221 and be integral structure.In conjunction with Fig. 1 and Fig. 2, screw 40 passes described second screw 122 and the described second installing hole 221a is installed in described bridge heap 12 on described second radiator 22.
As shown in Figure 2, in the present embodiment, the area sum of the first fin 201b of described first radiator 20 is less than the area sum of the second fin 221b of described second radiator 22.Such setting is to divide according to the temperature rise situation of element, and in the present embodiment promptly, the lower device of temperature rise is an insulated gate bipolar transistor 10, and the higher device of temperature rise is a bridge heap 12.
Understandably, in another embodiment of the present utility model, the area sum of the first fin 201b of described first radiator 20 is greater than the area sum of the second fin 221b of described second radiator 22, be that the lower device of temperature rise is a bridge heap 12, the higher device of temperature rise is an insulated gate bipolar transistor 10.
Please refer to Fig. 3 and Fig. 4, in the present embodiment, described electromagnetic oven heat radiation structure also comprises the radiator 30 that is installed in the described drain pan, described radiator 30 is positioned at same plane with described first radiator 20 and second radiator 22, and described radiator 30 is made of heat sink 301 in the form of sheets a plurality of and that be parallel to each other.The setting of described radiator 30 helps the heater element of described electromagnetic oven is dispelled the heat, with the service life that guarantees that described electromagnetic oven is more effectively worked and improved described electromagnetic oven more.
It should be noted that in the present embodiment the annexation of other elements and operation principle thereof and first embodiment are similar, do not repeat them here.
Abovely the utility model is described, but the utility model is not limited to the embodiment of above announcement, and should contains various modification, equivalent combinations of carrying out according to essence of the present utility model in conjunction with most preferred embodiment.