CN201655810U - 微型贴片二极管 - Google Patents
微型贴片二极管 Download PDFInfo
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- CN201655810U CN201655810U CN2010201425716U CN201020142571U CN201655810U CN 201655810 U CN201655810 U CN 201655810U CN 2010201425716 U CN2010201425716 U CN 2010201425716U CN 201020142571 U CN201020142571 U CN 201020142571U CN 201655810 U CN201655810 U CN 201655810U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
本实用新型涉及一种微型贴片二极管,包括片状管芯、位于片状管芯两侧的第一引脚片和第二引脚片及密封绝缘外层,所述的第一引脚片呈Z字形,片状管芯的阳极面焊接在第一引脚片的底面上,第二引脚片焊接在片状管芯的阴极面上,密封绝缘层包覆在片状管芯和第一引脚片及第二引脚片上,且第一引脚片和第二引脚片的两侧伸出密封绝缘外层。本实用新型增加了片状管芯的阴极面与第二引脚片的接触面积,使得贴片二极管通过的工作电流大、承受的功率大,能提高产品合格率和良品率。
Description
技术领域
本实用新型涉及一种微型贴片二极管,属于半导体二极管的技术领域。
背景技术
由于贴片二极管的管芯面积大于柱式二极管的面积,具有导通面积大,耐压性好等特点,而越来越多的用于各类印制线路板中。但常规微型贴片二极管见图1所示,片状管芯2的阳极面焊接在一侧的第一引脚片1上,而贴片管芯2的阴极面是通过铝丝3或金丝球经焊接或超声键合在另一侧的第二引脚片5上,最后将片状管芯2和第一引脚片和第二引脚片放入注塑模内注塑封装形成密封绝缘外壳,再经切脚,引脚打弯、测试分选等工艺制成微型贴片二极管。但该种结构的贴片二极管其片状管芯的阴极面是通过铝丝或金丝球与另一第二引脚片连接,贴片二极管通过的工作电流和功率均较小。另一方面,片状管芯采用铝丝或金丝球与第二引脚片连接,由于接触面积小,不仅增加了加工工序,而且也增加了加工的难度,该种结构的贴片二极管生产效率不高,且产品合格率不高。再则,由于微型贴片二极管在工作中,会受到机械应力以及热应力等因素的影响,也由于芯片与第二引脚片接触面积小,易造成贴片二极管的损坏,而不能有效提高贴片二极管的品质。
发明内容
本实用新型的目的是提供一种能增加工作电流大,能提高生产效率和产品的合格率的微型贴片二极管。
本实用新型为达到上述目的的技术方案是:一种微型贴片二极管,包括片状管芯、位于片状管芯两侧的第一引脚片和第二引脚片及密封绝缘外层,其特征在于:所述的第一引脚片呈Z字形,片状管芯的阳极面焊接在第一引脚片的下底面上,第二引脚片焊接在片状管芯的阴极面上,密封绝缘层包覆在片状管芯和第一引脚片及第二引脚片上,且第一引脚片和第二引脚片的两侧伸出密封绝缘外层。
本实用新型的第一引脚片采用Z形结构,片状管芯的阳极面焊接在第一引脚片的下底面上,而第二引脚片也焊接在片状管芯的阴极面上,而增加片状管芯与第二引脚片的接触面积,使得贴片二极管通过的工作电流大、承受的功率大。本实用新型片状管芯的阳极面和阴极面直接与第一引脚片和第二引脚片焊接,减少制造工艺,也由于第二引脚片直接焊接在片状管芯的阴极面上而增大接触面积,能大幅度提高生产效率,而提高产品的合格率,同时,也降低贴片二极管的工作过程中,受机械应力以及热应力等因素的影响,而提高微型贴片二极管的产品品质。
附图说明
下面结合附图对本实用新型的实施例作进一步的描述描述。
图1是已有微型贴片二极管的结构示意图。
图2是本实用新型的微型贴片二极管的结构示意图。
其中:1-第一引脚片,1-1-底面,1-2-竖边,2-片状管芯,3-铝丝,4-密封绝缘外层,5-第二引脚片。
具体实施方式
见图2所示,本实用新型的微型贴片二极管,包括片状管芯2、位于片状管芯2两侧的第一引脚片1和第二引脚片5及密封绝缘外层4,本实用新型的第一引脚片1呈Z字形,片状管芯2的阳极面焊接在第一引脚片1的底面1-1上,第二引脚片5焊接在片状管芯2的阴极面上,而增加片状管芯与第二引脚片5的接触面积,提高微型贴片二极管的工作电流大。本实用新型为使片状管芯2可靠的连接在第一引脚片1上,片状管芯2的侧边贴合第一引脚片1的竖边1-2上,密封绝缘外层4包覆在片状管芯2和第一引脚片1及第二引脚片5上,且第一引脚片1和第二引脚片5的两侧伸出密封绝缘外层4。
Claims (2)
1.一种微型贴片二极管,包括片状管芯、位于片状管芯两侧的第一引脚片和第二引脚片及密封绝缘外层,其特征在于:所述第一引脚片呈Z字形,片状管芯的阳极面焊接在第一引脚片的下底面上,第二引脚片焊接在片状管芯的阴极面上,密封绝缘层包覆在片状管芯和第一引脚片及第二引脚片上,且第一引脚片和第二引脚片的两侧伸出密封绝缘外层。
2.根据权利要求1所述的微型贴片二极管,其特征在于:所述的片状管芯的侧面与第一引脚片的竖边相接。
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CN2010201425716U CN201655810U (zh) | 2010-03-26 | 2010-03-26 | 微型贴片二极管 |
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CN2010201425716U CN201655810U (zh) | 2010-03-26 | 2010-03-26 | 微型贴片二极管 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102299131A (zh) * | 2011-09-09 | 2011-12-28 | 南通康比电子有限公司 | 一种sod-123封装结构的二极管 |
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2010
- 2010-03-26 CN CN2010201425716U patent/CN201655810U/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102299131A (zh) * | 2011-09-09 | 2011-12-28 | 南通康比电子有限公司 | 一种sod-123封装结构的二极管 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101124 Termination date: 20130326 |