CN201653804U - Nano-indentation system based on scanning electron microscope - Google Patents
Nano-indentation system based on scanning electron microscope Download PDFInfo
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- CN201653804U CN201653804U CN2010201534272U CN201020153427U CN201653804U CN 201653804 U CN201653804 U CN 201653804U CN 2010201534272 U CN2010201534272 U CN 2010201534272U CN 201020153427 U CN201020153427 U CN 201020153427U CN 201653804 U CN201653804 U CN 201653804U
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Abstract
The utility model relates to a nano-indentation system based on a scanning electron microscope, which belongs to the field of comprehensive performance test in low-dimensional nano material stress state, and is characterized by comprising a base, a sample base and an indentation head supporting seat; an angle adjuster, a three-shaped displacement gross adjustment device and a three-shaft micro displacement device are added on the sample base so as to shift a sample to 2 to 100mu m on the needle tip of an indentation head, so that the sample is over against the indentation head; the micro displacement device of the indentation head realizes the indentation operation; a strain foil, a varistor and a stress-strain tester in the indentation head realize the measurement to the indentation depth and stress of the needle tip; an imaging system combining scanning surface point high solution discloses the relationship of stress on material and a deformation mechanism; and simultaneously, the system can be engaged in the research on the optical and electrical properties of the material under stress action. The nano-indentation system based on the scanning electron microscope has the advantages of simple structure, low price and reliable performance, and can realize the research on the indentation operation and mechanical properties of the material.
Description
Technical field
The utility model relates to a kind of nano indentation system based on scanning electron microscope.This nano indentation system is measured impression instrument needle point to the signal of sample applied force and the depth of cup that is taken place by the Wheatstone bridge of being made up of voltage dependent resistor (VDR).Simultaneously, this nano indentation system can well be coupling in the scanning electron microscope, and the high-resolution imaging system home position observation sample that utilizes scanning electron microscope is done the variation of shape and the structural information of time spent being subjected to external force, belongs to the nano material in-situ field tests.
Background technology
In recent years, nano material (as nano wire, nano belt, nano thin-film, nanometer rods etc.), because character such as its excellent mechanics, electricity, optics more and more cause people's attention, but because the restriction of size, the method of the operation nano wire that makes is very limited, yet, as the status material of the primary element military service situation and the fiduciary level performance that but affects material greatly under stress of nano-device in future, the method for the character of development test low-dimensional materials under stress state just seems particularly important.
At present, the method that is used for testing the performance of low-dimension nano material under stress roughly has following several.
One, utilizes scanning probe microscopy (SPM, comprise AFM, STM etc.) realize the research of character under the low-dimension nano material stress, " Resonant Raman Spectroscopy of Individual Strained Single-Wall CarbonNanotubes " that Xiaojie Duan in 2007 etc. are published on " Nano letters " utilizes the atomic force probe of atomic force microscope to apply a torsional moment and uniaxial strain for respectively single overlength Single Walled Carbon Nanotube, finds that the frequency displacement of different modes has appearred in the raman spectra of carbon nano-tube.And the variation of passing through Raman peaks intensity discloses the influence of strain to electronic band structure.But this method can't be accurately real-time provides the strain that material takes place, and can't provide the corresponding relation between strain and the Raman spectrum frequency displacement simultaneously in real time.
Two, transmission electron microscope is realized the test of the electric property of nano material under stress in conjunction with scanning probe microscopy.Xuedong Bai etc. is published in being entitled as on " Nano letters " " Deformation-DrivenElectrical Transport of Individual Boron Nitride Nanotubes " and has just studied the variation of single BN nanotube conduction property under stress state.Discovery originally is that BN nanotube electric conductivity after being subjected to stress flexural deformation of insulator has become semi-conductive conductive characteristic, and can also be returned to the conductive characteristic of insulator after stress removes.This method also just provides the relation between acting force and the material electric conductivity qualitatively, can not be quantitative provide the great power that applies, the variation that great strain can cause the material conduction property perhaps takes place.
Above method can not provide the stress that is applied on the material intuitively, and therefore the mechanical property for analysis of material has certain degree of difficulty.Scanning electron microscope is one of important tool that can directly disclose nanometer and atomic scale information of relying on of people, the scanning electron microscope accelerating potential is lower, with backscattered electron and secondary electron imaging, is applicable to several samples form (wire for example, bulk, Powdered etc.).Its relatively large sample observation ward provides more convenient condition for implementing the original position distortion and applying outer field action, the thermal field emission scan electron microscope that developed recently gets up has increased substantially spatial resolution and beam current density, for the research of nano material provides means easily.
The elastic modulus of in site measurement single nano-wire in scanning electron microscope, plastic yield, yield strength and fracture strength are the most direct method of testings, utilize the microstructure change in backscattered electron or the secondary electron imaging home position observation nano wire deformation process simultaneously, for surface effect, the size effect that discloses the monodimension nanometer material distortion provides direct experimental evidence.
The utility model content
The purpose of this utility model is to provide a kind of and carries out the test of ess-strain without laser displacement positioning system and traditional magnetic force systems, but utilizes the impression head of the special Wheatstone bridge of forming based on voltage dependent resistor (VDR) that sample is carried out crease operation.By Wheatstone bridge, the strain that sample took place when measuring crease operation accurately records the stress intensity that the impression head applies sample according to external stress-strain testing system, realizes the sensing effect of counter stress.
Comprise base and the sample base that is fixed on base one side, the impression head that is fixed on opposite side relative with sample base on the base is supported seat; Sample base be shaped as right-angled trapezium or right-angle triangle, right angle face and base border join and place perpendicular to base, the hypotenuse place face be the inclined-plane; The direction that definition is parallel to the normal direction on inclined-plane and points to outside, sample base inclined-plane is a Z-direction, the direction that definition is parallel to inclined-plane and base intersection is an X-direction, being defined in the interior direction perpendicular to inclined-plane and base intersection of inclined-plane face is Y direction, and X, Y, Z three direction of principal axis satisfy right-hand screw rule;
Substrate is by angle demodulator I, and angle demodulator II, angle demodulator III are fixed on the inclined-plane of sample base, with lead I above-mentioned three angle demodulators are connected on the angle controller; On substrate, fix a three-shaft displacement rack and rinion adjustment; Be connected on the displacement coarse adjustment controller by lead II, fixing X-axis micro positioner on the three-shaft displacement rack and rinion adjustment, fixing Y-axis micro positioner on the X-axis micro positioner, be implemented in the interior scanning of XY face to sample, Z axle micro positioner is fixed on the Y-axis micro positioner, fixed sample stage at Z axle micro positioner face, sample is fixed on the sample stage, is positioned at the below of pole shoe; One end of impression head is fixed on the micro positioner, and this micro positioner is fixed on the top that the impression head is supported seat, and the needle point of the impression head other end is over against sample; The X-axis micro positioner, the Y-axis micro positioner, Z axle micro positioner and micro positioner are connected on the Micro displacement controller by lead III, and the impression head is connected on the stress-strain test instrument by lead IV;
The impression head comprises adapter, hollow sleeve, be positioned at the slip-on head of hollow sleeve inside, needle point is fixed on the slip-on head and is positioned at the outside of impression head, in hollow sleeve inside, stress-strain inductive axis one side links to each other with slip-on head, one side of stress-strain inductive axis opposite side and foil gauge is fixed, foil gauge is fixed on the fixed pin of hollow sleeve inside, a voltage dependent resistor (VDR) that is used for measuring small strain has been fixed in center, foil gauge another side, U type hollow seat is pressed on the foil gauge, U type hollow seat is fastened in hollow sleeve inside by adapter, and adapter links to each other with micro positioner;
3 resistance and the power supply that are fixed on voltage dependent resistor (VDR) on its foil gauge and stress-strain test instrument inside are formed a Wheatstone bridge, and Wheatstone bridge links to each other with the strain testing unit that the variation of the caused resistance value of distortion can be changed into electric signal of stress-strain test instrument inside by output terminal; Described three angle demodulators adopt stepper motor, piezoelectric ceramics shifter or hydraulic displacement device; Described three-shaft displacement rack and rinion adjustment, the X-axis micro positioner, the Y-axis micro positioner, Z axle micro positioner and micro positioner adopt stepper motor, piezoelectric ceramics shifter or hydraulic displacement device.
The realization of the measurement of impression head counter stress-strain is by being fixed on the voltage dependent resistor (VDR) on its internal strain sheet and the resistance I of stress-strain test instrument inside, resistance II and power supply are formed the microstrain that Wheatstone bridge is measured foil gauge, and then draw the size of the power that the stress-strain inductive axis records according to the Young modulus of foil gauge, draw stress value according to the active area of needle point depth of cup and needle point and sample.The resistance of resistance I is identical with the voltage dependent resistor (VDR) resistance, adopt common resistance to get final product, resistance II is and the identical resistance of voltage dependent resistor (VDR), link to each other by the microstrain test cell of output terminal with stress-strain test instrument inside, concrete operations figure supposes to make the micro positioner of impression head rear end that Z take place by Micro displacement controller as shown in Figure 4
1Axial displacement, if there is not the obstruction of sample so, Z also should take place in needle point
1Displacement, when there was sample at the needle point place, needle point will be pressed into sample interior certain distance h, this moment in impression head inside, will measure the stress-strain inductive axis by voltage dependent resistor (VDR) and stress-strain test instrument Z has taken place
2Displacement, and Z
1=Z
2+ h can also provide simultaneously the size of the suffered power of stress-strain axle this moment, and Z
1Size provide by regulating Micro displacement controller.
Substrate drives three angle demodulators by the adjusting angle controller and adjusts angles of inclination, and the needle point that makes the area-of-interest of the sample that will observe can face the impression head is finished impression and tested.Described three angle demodulators can adopt stepper motor, piezoelectric ceramics shifter, hydraulic displacement device etc.
Sample stage moves on a large scale and can realize by regulating the three-shaft displacement rack and rinion adjustment, Micro displacement controller drives X, Y, Z axle micro positioner is realized by regulating to the accurate face scanning of sample, described three-shaft displacement rack and rinion adjustment, the X-axis micro positioner, Y-axis micro positioner, Z axle micro positioner and micro positioner can adopt stepper motor, piezoelectric ceramics shifter, hydraulic displacement device etc.
Further, described foil gauge adopts the metal or the semiconductor material of known Young modulus, and described voltage dependent resistor (VDR) adopts resistance value to the more sensitive material of strain ratio.
Further, described stress-strain test instrument is the self assembly instrument, also can adopt the commercial instrument that satisfies the utility model requirement.Instrument comprises a microstrain test cell and a strain-stress transmission unit; The microstrain test cell can adopt commercial microstrain tester or self-control microstrain tester, mainly be the microstrain that the change transitions of the resistance value that voltage dependent resistor (VDR) took place that will record by Wheatstone bridge becomes foil gauge to take place, this microstrain corresponding simultaneously the displacement Z that taken place of stress-strain inductive axis
2Strain-stress transmission unit is to convert microstrain the acting force of needle point to sample to according to the microstrain that foil gauge took place that the Young modulus of foil gauge and microstrain test cell record, when selecting the general commercial needle point for use, the depth of cup correspondence the active area of needle point and sample, and strain thus-stress transmission unit can be given out by the stress that sample is suffered.Need proofread the active area of depth of cup and needle point and sample when selecting the self-control needle point for use.The stress-strain test instrument can be exported displacement and the needle point that the stress-strain inductive axis taken place simultaneously and be applied to the sample upper stress.
Further, described needle point can adopt the common commercial needle point, also can adopt the self-control needle point according to requirement of experiment.
Further, described voltage dependent resistor (VDR) adopts resistance to the more sensitive material of strain ratio, as platinum, and platinum alloy, nickel, nickel alloy, metal materials such as constantan also can adopt the semiconductor resistor material, and the experimental precision of resistance size is chosen.
The utility model is fixed in the scanning electron microscope sample chamber, carry out crease operation by Micro displacement controller control impression head, needle point is to the crease operation of sample on observation impression head under the scanning electron microscope image formation state, utilize deformation mechanism and the fracture behaviour thereof of imaging system record nano material under stress of scanning electron microscope, by fracture mechanism to the morphology analysis nano wire of fracture, by external stress-strain testing system output stress-strain signal, the mechanical property of the interpretation of result material that comprehensive scanning Electronic Speculum imaging system obtains.
The utility model has following advantage
It is low that the utility model compared with prior art has a cost, easy and simple to handle, dependable performance, the advantage of applied range, because the Wheatstone bridge that adopts piezoresistive element to form carries out the measurement of stress-strain, overcome traditional nano-hardness tester and utilized magnetic force systems to carry out the mechanism of stress-strain test, effectively reduced the influence of magnetic field like this scanning electron microscope electron bundle.Simultaneously, also can utilize the charge transport characteristic of the utility model measurement device nano material in the ess-strain process, for nano material provides reliable data in the development and Design of numerous areas such as MEMS (micro electro mechanical system) and semiconductor devices, sensor.
Description of drawings
Fig. 1, indentation system front plan view
Fig. 2, sample base stereographic map
Fig. 3, impression head sectional view
Fig. 4, depth of cup test synoptic diagram
Fig. 5, wheatstone bridge circuits synoptic diagram
The drawing explanation:
1, base 2, sample base 3, impression head are supported seat 4, substrate
5, angle demodulator I 6, angle demodulator II 7, angle demodulator III
8, lead I 9, angle controller 10, three-shaft displacement rack and rinion adjustment
11, lead II 12, displacement coarse adjustment controller 13, X-axis micro positioner
14, Y-axis micro positioner 15, Z axle micro positioner 16, sample stage 17, sample
18, impression head 19, micro positioner 20, needle point 21, lead III
22, Micro displacement controller 23, lead IV 24, stress-strain test instrument
25, pole shoe 26, adapter 27, hollow sleeve 28, slip-on head
29, stress-strain inductive axis 30, fixed pin 31, foil gauge
32, voltage dependent resistor (VDR) 33, U type hollow seat 34, resistance I 35, resistance II
36, power supply 37 output terminals
Embodiment
To achieve these goals, should it is characterized in that: comprise base 1 and be fixed on the sample base 2 of base 1 one sides that the impression head that is fixed on the base 1 opposite side relative with sample base 2 is supported seat 3 based on the nano-hardness tester of scanning electron microscope.For the ease of in the observation sample in scanning electron microscope sample being carried out crease operation, sample base 2 be shaped as right-angled trapezium or right-angle triangle, right angle face and base border join and place perpendicular to base 1, the normal direction that defines the inclined-plane simultaneously is a Z-direction, X, Y, Z three direction of principal axis as shown in Figure 1.Substrate 4 is by an angle demodulator I 5, angle demodulator II 6, angle demodulator III7 is fixed on the inclined-plane of sample base 2, close substrate 4 one lateral edges of angle demodulator I5 also are positioned on the center line of substrate 4, angle demodulator II6 and angle demodulator III7 and angle demodulator I5 form an equilateral triangle, be symmetrically distributed in substrate 4 opposite side edges with respect to substrate 4 center lines, with lead I 8 three angle demodulators are connected on the angle controller 9, by adjustment, regulate the relative angle on substrate 4 and sample base 2 inclined-planes to three angle demodulators.On substrate 4, fix a three-shaft displacement rack and rinion adjustment 10.Be connected on the displacement coarse adjustment controller 12 on three-shaft displacement rack and rinion adjustment 10 fixedly X-axis micro positioner 13 by lead II 11, fixing Y-axis micro positioner 14 on X-axis micro positioner 13, be implemented in the interior scanning of XY face to sample 17, Z axle micro positioner 15 is fixed on the Y-axis micro positioner 14, on Z axle micro positioner 15, fixed sample stage 16, sample 17 is fixed on the sample stage 16, is positioned at the below of pole shoe 25.One end of impression head 18 is fixed on the micro positioner 19, micro positioner 19 is fixed on the top that the impression head is supported seat 3, in order to make the needle point 20 that is fixed on the impression head other end can be over against sample 17, an inclined-plane is made on impression head support seat 3 tops equally, and be parallel with the inclined-plane of sample base 2.X-axis micro positioner 13, Y-axis micro positioner 14, Z axle micro positioner 15 and micro positioner 19 are connected on the Micro displacement controller 22 by lead III 21, and impression head 18 is connected on the stress-strain test instrument 24 by lead IV 23.
The realization of the measurement of impression head counter stress-strain is by being fixed on the resistance I 35 of voltage dependent resistor (VDR) 32 and stress-strain test instrument inside on its internal strain sheet 31, resistance II 36 forms (wheatstone bridge circuits figure as shown in Figure 5) that Wheatstone bridge is realized with power supply 37, the resistance of resistance I35 is identical with voltage dependent resistor (VDR) 32 resistances, adopt common resistance to get final product, resistance II 36 is and voltage dependent resistor (VDR) 32 identical resistance, link to each other by the test cell of output terminal 37 with stress-strain test instrument inside, test cell can be realized the test of counter stress-strain with voltage dependent resistor (VDR) 32 because the variation of the caused resistance value of distortion changes into electric signal.Concrete operations figure supposes to make the micro positioner 19 of impression head 18 rear ends that Z take place by Micro displacement controller 22 as shown in Figure 4
1Axial displacement, if there is not the obstruction of sample 17 so, Z also should take place in needle point 20
1Displacement, when there was sample at needle point 20 places, needle point 20 will be pressed into sample 17 inner certain distance h, this moment in impression head 18 inside, will measure stress-strain inductive axis 29 by voltage dependent resistor (VDR) 31 and stress-strain test instrument 24 Z has taken place
2Displacement, and Z
1=Z
2+ h can also provide simultaneously the size of the suffered power of stress-strain axle this moment, and Z
1Size provide by regulating Micro displacement controller 22.
Sample stage moves on a large scale and can realize by regulating three-shaft displacement rack and rinion adjustment 10, Micro displacement controller 22 drives X, Y, Z axle micro positioner is realized by regulating to the accurate face scanning of sample, described three-shaft displacement rack and rinion adjustment 10, X-axis micro positioner 13, Y-axis micro positioner 14, Z axle micro positioner 15 and micro positioner 19 can adopt stepper motor, piezoelectric ceramics shifter, hydraulic displacement device etc.
Further, described foil gauge adopts the metal or the semiconductor material of known Young modulus, and described voltage dependent resistor (VDR) adopts resistance value to the more sensitive material of strain ratio.
Further, described needle point can adopt the common commercial needle point, also can adopt the self-control needle point according to requirement of experiment.
Further, described voltage dependent resistor (VDR) adopts resistance to the more sensitive material of strain ratio, as platinum, and platinum alloy, nickel, nickel alloy, metal materials such as constantan also can adopt the semiconductor resistor material, and the experimental precision of resistance size is chosen.
Implementation step of the present utility model is as follows:
1, fixed sample sample base 2 and impression head are supported seat 3 on base 1, substrate 4 is being fixed on the inclined-plane of sample base 2 by angle demodulator I 5, angle demodulator II 6, angle demodulator III 7 on the sample base 2, three-shaft displacement rack and rinion adjustment 10 is fixed on the substrate 4, and X-axis micro positioner 13, Y-axis micro positioner 14, Z axle micro positioner 15 are fixed on the three-shaft displacement rack and rinion adjustment 10 successively.
2, the assembling of impression head 18 is that the center of an end of stress-strain inductive axis 29 and foil gauge 31 one sides is fixed, voltage dependent resistor (VDR) 32 is fixed on the another side center of foil gauge 31, foil gauge 31 is fixed on the fixed pin 30, the other end of stress-strain inductive axis 29 is fixed on a side of slip-on head 28, be contained in hollow sleeve 27 inside, the opposite side of slip-on head 28 is needle point 20 fixedly, adapter 26 usefulness U type hollow seat 33 compress foil gauge 31, micro positioner 19 is fixed on the adapter 26, micro positioner 19 is fixed on the impression head together with impression head 18 supports that the normal of guaranteeing needle point 20 and sample 17 is substantially on same straight line on the seat 3.
3, the base 1 with indentation system is fixed on the scanning electron microscope support seat, with lead I 8, lead II11, lead III 21, lead IV 23 respectively with the angle controller 9 of scanning electron microscope outside, displacement coarse adjustment controller 12, Micro displacement controller 22, stress-strain test instrument 24 connects, and institute's test sample product 17 are fixed on the sample stage 16, closes the scanning electron microscope example chamber and vacuumizes.
4, taken out vacuum after, under scanning electron microscope imaging system observation, regulate displacement coarse adjustment controller 12 and drive three-shaft displacement rack and rinion adjustments 10 and search out institute's test sample product 17, with sample 17 region of interest be adjusted to can clear observation state.
5, by the adjusting of Micro displacement controller 22 is driven X-axis micro positioner 13, Y-axis micro positioner 14, Z axle micro positioner 15 with sample progressively near needle point 20 positions on the impression head 18, adjust angle controller 9 and drive angle demodulator I 5, angle demodulator II 6, angle demodulator III 7 and make the needle point 20 can be over against the sample 17 that will carry out crease operation.
6, regulating Micro displacement controller 22 drives micro positioners 19 and makes needle point 20 move and sample 17 is carried out crease operation to sample 17.
7, utilize the process and the shape characteristic of sample 17 before and after crease operation of the imaging system record crease operation of scanning electron microscope.
8, the stress signal that acts on the sample 17 of the needle point 20 by stress-strain test instrument 24 output draws the stress-strain curve of sample 17 through the impression processes, the mechanical behavior of the shape characteristic analytic sample that obtains in conjunction with scanning electron microscope.
Claims (1)
1. the nano indentation system based on scanning electron microscope is characterized in that: comprise base and the sample base that is fixed on base one side, be fixed on the impression head support seat of opposite side relative with sample base on the base; Sample base be shaped as right-angled trapezium or right-angle triangle, right angle face and base border join and place perpendicular to base, the hypotenuse place face be the inclined-plane; The direction that definition is parallel to the normal direction on inclined-plane and points to outside, sample base inclined-plane is a Z-direction, the direction that definition is parallel to inclined-plane and base intersection is an X-direction, being defined in the interior direction perpendicular to inclined-plane and base intersection of inclined-plane face is Y direction, and X, Y, Z three direction of principal axis satisfy right-hand screw rule;
Substrate is by angle demodulator I, and angle demodulator II, angle demodulator III are fixed on the inclined-plane of sample base, with lead I above-mentioned three angle demodulators are connected on the angle controller; On substrate, fix a three-shaft displacement rack and rinion adjustment; Be connected on the displacement coarse adjustment controller by lead II, fixing X-axis micro positioner on the three-shaft displacement rack and rinion adjustment, fixing Y-axis micro positioner on the X-axis micro positioner, be implemented in the interior scanning of XY face to sample, Z axle micro positioner is fixed on the Y-axis micro positioner, fixed sample stage at Z axle micro positioner face, sample is fixed on the sample stage, is positioned at the below of pole shoe; One end of impression head is fixed on the micro positioner, and this micro positioner is fixed on the top that the impression head is supported seat, and the needle point of the impression head other end is over against sample; The X-axis micro positioner, the Y-axis micro positioner, Z axle micro positioner and micro positioner are connected on the Micro displacement controller by lead III, and the impression head is connected on the stress-strain test instrument by lead IV;
The impression head comprises adapter, hollow sleeve, be positioned at the slip-on head of hollow sleeve inside, needle point is fixed on the slip-on head and is positioned at the outside of impression head, in hollow sleeve inside, stress-strain inductive axis one side links to each other with slip-on head, one side of stress-strain inductive axis opposite side and foil gauge is fixed, foil gauge is fixed on the fixed pin of hollow sleeve inside, a voltage dependent resistor (VDR) that is used for measuring small strain has been fixed in center, foil gauge another side, U type hollow seat is pressed on the foil gauge, U type hollow seat is fastened in hollow sleeve inside by adapter, and adapter links to each other with micro positioner;
3 resistance and the power supply that are fixed on voltage dependent resistor (VDR) on its foil gauge and stress-strain test instrument inside are formed a Wheatstone bridge, and Wheatstone bridge links to each other with the strain testing unit that the variation of the caused resistance value of distortion can be changed into electric signal of stress-strain test instrument inside by output terminal; Described three angle demodulators adopt stepper motor, piezoelectric ceramics shifter or hydraulic displacement device; Described three-shaft displacement rack and rinion adjustment, the X-axis micro positioner, the Y-axis micro positioner, Z axle micro positioner and micro positioner adopt stepper motor, piezoelectric ceramics shifter or hydraulic displacement device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201534272U CN201653804U (en) | 2010-04-09 | 2010-04-09 | Nano-indentation system based on scanning electron microscope |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201534272U CN201653804U (en) | 2010-04-09 | 2010-04-09 | Nano-indentation system based on scanning electron microscope |
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| CN201653804U true CN201653804U (en) | 2010-11-24 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101793911A (en) * | 2010-04-09 | 2010-08-04 | 北京工业大学 | Nano indentation system based on scanning electron microscope |
| CN102288501A (en) * | 2011-07-25 | 2011-12-21 | 吉林大学 | Precise nanoindentation test device |
| CN102928308A (en) * | 2012-10-26 | 2013-02-13 | 吉林大学 | Full-strain measurement type in-situ nanometer impress/scratch testing device |
| CN103308404A (en) * | 2013-06-14 | 2013-09-18 | 吉林大学 | In-situ nano-indentation tester based on adjustable stretching-bending preload |
| CN103645199A (en) * | 2013-09-17 | 2014-03-19 | 北京工业大学 | In-situ double-axis tilting nanoindenter for transmission electron microscope |
| CN105547880A (en) * | 2015-12-31 | 2016-05-04 | 广东科学技术职业学院 | Fast metal plate strength detecting device and detecting method thereof |
| CN109665490A (en) * | 2018-12-29 | 2019-04-23 | 哈尔滨工业大学 | A kind of nanometer of attachment device and nano wire connection method |
| CN109932262A (en) * | 2019-04-12 | 2019-06-25 | 中国原子能科学研究院 | The measurement method of mechanical property at material different depth |
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2010
- 2010-04-09 CN CN2010201534272U patent/CN201653804U/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101793911A (en) * | 2010-04-09 | 2010-08-04 | 北京工业大学 | Nano indentation system based on scanning electron microscope |
| CN101793911B (en) * | 2010-04-09 | 2012-09-05 | 北京工业大学 | Nano indentation system based on scanning electron microscope |
| CN102288501A (en) * | 2011-07-25 | 2011-12-21 | 吉林大学 | Precise nanoindentation test device |
| CN102928308A (en) * | 2012-10-26 | 2013-02-13 | 吉林大学 | Full-strain measurement type in-situ nanometer impress/scratch testing device |
| CN102928308B (en) * | 2012-10-26 | 2014-07-09 | 吉林大学 | Full-strain measurement type in-situ nanometer impress/scratch testing device |
| CN103308404A (en) * | 2013-06-14 | 2013-09-18 | 吉林大学 | In-situ nano-indentation tester based on adjustable stretching-bending preload |
| CN103645199A (en) * | 2013-09-17 | 2014-03-19 | 北京工业大学 | In-situ double-axis tilting nanoindenter for transmission electron microscope |
| CN105547880A (en) * | 2015-12-31 | 2016-05-04 | 广东科学技术职业学院 | Fast metal plate strength detecting device and detecting method thereof |
| CN109665490A (en) * | 2018-12-29 | 2019-04-23 | 哈尔滨工业大学 | A kind of nanometer of attachment device and nano wire connection method |
| CN109665490B (en) * | 2018-12-29 | 2020-09-25 | 哈尔滨工业大学 | Nano connecting device and nano wire connecting method |
| CN109932262A (en) * | 2019-04-12 | 2019-06-25 | 中国原子能科学研究院 | The measurement method of mechanical property at material different depth |
| CN109932262B (en) * | 2019-04-12 | 2020-11-10 | 中国原子能科学研究院 | Method for measuring mechanical properties of materials at different depths |
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