CN106556535A - A kind of mechanic property test method based on mechanics sensor - Google Patents
A kind of mechanic property test method based on mechanics sensor Download PDFInfo
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- CN106556535A CN106556535A CN201610984204.2A CN201610984204A CN106556535A CN 106556535 A CN106556535 A CN 106556535A CN 201610984204 A CN201610984204 A CN 201610984204A CN 106556535 A CN106556535 A CN 106556535A
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- 238000010998 test method Methods 0.000 title claims abstract description 24
- 239000000523 sample Substances 0.000 claims abstract description 92
- 238000012360 testing method Methods 0.000 claims abstract description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010937 tungsten Substances 0.000 claims abstract description 27
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 230000006698 induction Effects 0.000 claims abstract description 21
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000010894 electron beam technology Methods 0.000 claims abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 238000011065 in-situ storage Methods 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 238000004062 sedimentation Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 230000032258 transport Effects 0.000 claims description 5
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- 235000007164 Oryza sativa Nutrition 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- HTCXJNNIWILFQQ-UHFFFAOYSA-M emmi Chemical compound ClC1=C(Cl)C2(Cl)C3C(=O)N([Hg]CC)C(=O)C3C1(Cl)C2(Cl)Cl HTCXJNNIWILFQQ-UHFFFAOYSA-M 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
- G01N3/06—Special adaptations of indicating or recording means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0014—Type of force applied
- G01N2203/0016—Tensile or compressive
- G01N2203/0017—Tensile
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0058—Kind of property studied
- G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
- G01N2203/0075—Strain-stress relations or elastic constants
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/0641—Indicating or recording means; Sensing means using optical, X-ray, ultraviolet, infrared or similar detectors
Abstract
The invention discloses a kind of mechanic property test method based on mechanics sensor, step includes:Testing sample is placed on into sample deposition, mechanics induction apparatuss is put into and is fixed, silicon wafer is fixed on into the sample deposition on mobile platform top;The first T-shaped groove is etched on mechanics induction apparatuss with focused ion beam, the second T-shaped groove is etched on silicon;The I type convex shape samples being adapted with groove are etched on testing sample simultaneously;Transport into I type grooves fixed after will be tungsten tipped probe bonding with sample, tungsten tipped probe is separated with sample by electron beam irradiation;Start the video recording of ultramicroscope, mobile X-axis mobile platform, until I type convex shape samples are pulled off;According to the pulling force data that the multiframe consecutive image and mechanics induction apparatuss in video recording is measured, the mechanical property and stress-strain diagram of testing sample are obtained.Present invention achieves the performance test such as extension test and mechanics to material is carried out simultaneously.
Description
Technical field
The present invention relates to test instrunment technical field, more particularly to a kind of mechanical property survey based on mechanics sensor
Method for testing.
Background technology
Nano material and nanotechnology are that various countries pay special attention to and one of the research field paid attention in recent years.When the chi of material
It is very little when narrowing down to Nano grade, its physical property, chemical property, and other properties can greatly difference with it is even complete
Full difference is with it in macro-size(Micron millimeter rank)Under the every characteristic for being showed.And nanoscale imparting is all kinds of
The special performance of material, also attracts increasing scientific research personnel and mechanism to be engaged in nanometer material science research and technological development work
Make.
By taking carbon nano-tube material as an example.CNT is typical monodimension nanometer material, it have other many materials without
Excellent mechanics, electricity, thermal property and chemical property that method matches in excellence or beauty;It is also all kinds of researchs, including composite, catalysis, electricity
The focus and emphasis object of study of the research fields such as chemistry, various kinds of sensors.There is now thousands upon thousands R&D institutions and personnel
Study and product development applied research in the basic property for specializing in CNT.Although now many enterprises and research aircraft
Structure has had the technology and ability of a large amount of CNTs of manufacture production, but they nearly all clearly cannot be produced to them
CNT performance make one it is correct, accurately assess, particularly mechanical property.Because the diameter chi of CNT
It is very little very little, it is several nanometers to several tens of nanometers scope, and existing test instrunment cannot be completed to Nano grade or micron level
Material carries out extension test, and evaluation and the sign of mechanical property.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of mechanical property based on mechanics sensor
Energy method of testing, it is intended to which test instrunment cannot complete to evaluate the mechanical property of CNT and table in solving prior art
The defect levied.
Technical scheme is as follows:
A kind of mechanic property test method based on mechanics sensor, wherein, the method comprising the steps of:
S1, testing sample is placed on sample deposition, and mechanics induction apparatuss are fixed on into scanning electron microscope in situ detection
Testing sample is positioned over sample deposition by the sample deposition side at the top of the X-axis mobile platform of device, and silicon wafer is solid
Due to the nearly sample deposition end on Z axis mobile platform top;Wherein, scanning electron microscope in situ detection device includes being arranged on
Y-axis mobile platform on pedestal, the X-axis mobile platform being arranged on Y-axis mobile platform, and the Z axis movement being arranged on pedestal
Platform, the sample deposition are arranged on the nearly Z axis mobile platform end on X-axis mobile platform top;
S2, the first T-shaped groove is etched on mechanics induction apparatuss by focused ion beam, and it is T-shaped to etch second on silicon
Groove, the first T-shaped groove constitute I type grooves with the described second T-shaped groove;Lost on testing sample by focused ion beam
Carve the I type convex shape samples being adapted with the I types groove;
S3, will be tungsten tipped probe bonding with I type convex shape samples after, I type convex shape samples are transported into into I type grooves fixed, and are led to
Cross electron beam irradiation tungsten tipped probe is separated with I type convex shape samples;
S4, the video recording for starting ultramicroscope, and to specify translational speed to move X-axis mobile platform, until by I type convex shape samples
Product are pulled off;
S5, the pulling force data measured according to the multiframe consecutive image and mechanics induction apparatuss in video recording, obtain the mechanics of testing sample
Performance and load-deformation curve.
The mechanic property test method based on mechanics sensor, wherein, step S2 is specifically included:
S21, the first T-shaped groove is etched on mechanics induction apparatuss by focused ion beam;
S22, etch the first T-shaped groove by focused ion beam on silicon;
S23, the I type convex shape samples being adapted with the I types groove are etched by focused ion beam on testing sample.
The mechanic property test method based on mechanics sensor, wherein, step S3 is specifically included:
S31, tungsten tipped probe is contacted with I type convex shape samples after, tungsten tipped probe is glued with I type convex shape samples by platinum sedimentation
Connect, and mobile tungsten tipped probe transports I type convex shape samples to one end and is fixed on the described second T-shaped groove;
S32, by focused ion beam irradiation tungsten tipped probe and the abutting edge of I type convex shape samples, by tungsten tipped probe and I type convex shape samples
Product are separated;
S33, I type convex shape samples are fixed on by the described second T-shaped groove by platinum sedimentation;
The other end of I type convex shape samples is fixed on described first T-shaped by S33, mobile X-axis mobile platform and Y-axis mobile platform
Groove, and the field section by platinum sedimentation just I types convex shape sample is fixed on the described first T-shaped groove.
The mechanic property test method based on mechanics sensor, wherein, the translational speed is 0.3-0.7nm/s.
The mechanic property test method based on mechanics sensor, wherein, the translational speed is 0.5nm/s.
The mechanic property test method based on mechanics sensor, wherein, the top length of the first T-shaped groove is
15 microns, bottom lengths be 2 microns, width be 6 microns, depth be 4 microns.
The mechanic property test method based on mechanics sensor, wherein, the top length of the second T-shaped groove is
15 microns, bottom lengths be 2 microns, width be 6 microns, depth be 4 microns.
The mechanic property test method based on mechanics sensor, wherein, the length of the I types convex shape sample is 20
Micron, width are 4 microns, thickness is less than 1 micron.
Mechanic property test method based on mechanics sensor provided by the present invention, step include:Testing sample is put
Put in sample deposition, be put into mechanics induction apparatuss and fix, silicon wafer is fixed on into the sample deposition on mobile platform top;With poly-
Pyrophosphate ion beam etches the first T-shaped groove on mechanics induction apparatuss, etches the second T-shaped groove on silicon;Simultaneously to be measured
The I type convex shape samples being adapted with groove are etched on sample;Transport into I type grooves solid after will be tungsten tipped probe bonding with sample
It is fixed, tungsten tipped probe is separated with sample by electron beam irradiation;The video recording of startup ultramicroscope, mobile X-axis mobile platform, until
I type convex shape samples are pulled off;According to the pulling force data that the multiframe consecutive image and mechanics induction apparatuss in video recording is measured, obtain
The mechanical property and load-deformation curve of testing sample.Present invention achieves the performance such as extension test and mechanics to material is surveyed
Examination is carried out simultaneously.
Description of the drawings
Fig. 1 is the flow chart of the mechanic property test method preferred embodiment based on mechanics sensor of the present invention.
Fig. 2 is the structural representation of scanning electron microscope in situ detection device in the present invention.
Specific embodiment
The present invention provides a kind of tensile test method based on atomic force microscope probe, to make the purpose of the present invention, skill
Art scheme and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that tool described herein
Body embodiment only to explain the present invention, is not intended to limit the present invention.
Fig. 1 and Fig. 2 is please also refer to, wherein Fig. 1 is the Mechanics Performance Testing side based on mechanics sensor of the present invention
The flow chart of method preferred embodiment, Fig. 2 are the structural representation of scanning electron microscope in situ detection device in the present invention.As schemed
Shown in 1 and Fig. 2, the mechanic property test method based on mechanics sensor, including:
Step S1, testing sample is placed on sample deposition, and it is in situ that mechanics induction apparatuss are fixed on scanning electron microscope
Testing sample is positioned over sample deposition by the sample deposition side at the top of the X-axis mobile platform of detection means, and by silicon wafer
Piece is fixed on the nearly sample deposition end on Z axis mobile platform top;Wherein, scanning electron microscope in situ detection device includes setting
The Y-axis mobile platform on pedestal is put, the X-axis mobile platform being arranged on Y-axis mobile platform, and the Z axis being arranged on pedestal
Mobile platform, the sample deposition are arranged on the nearly Z axis mobile platform end on X-axis mobile platform top;
Step S2, the first T-shaped groove is etched on mechanics induction apparatuss by focused ion beam, and etch second on silicon
T-shaped groove, the first T-shaped groove constitute I type grooves with the described second T-shaped groove;By focused ion beam in testing sample
On etch the I type convex shape samples being adapted with the I types groove;
Step S3, will be tungsten tipped probe bonding with I type convex shape samples after, I type convex shape samples are transported into into I type grooves fixed,
And tungsten tipped probe is separated with I type convex shape samples by electron beam irradiation;
Step S4, the video recording for starting ultramicroscope, and to specify translational speed to move X-axis mobile platform, until I types is raised
Shape sample is pulled off;
Step S5, the pulling force data measured according to the multiframe consecutive image and mechanics induction apparatuss in video recording, obtain testing sample
Mechanical property and load-deformation curve
More specifically, as shown in Fig. 2 the scanning electron microscope in situ detection device includes:
Base 10;
Y-axis mobile platform 200, the Y-axis mobile platform 200 are arranged on the base 10;
X-axis mobile platform 100, the X-axis mobile platform 100 are arranged on the Y-axis mobile platform 200, and flat in Y-axis movement
Mobile 100 on platform;
Sample deposition 110, the sample deposition 110 are arranged on the top of X axles mobile platform 100;
Mechanics sensor 120, the mechanics sensor 120 are arranged on the side of the sample deposition 110;
Z axis mobile platform 300, the Z axis mobile platform 300 are arranged on base 10, and make to rise relative to the base 10
Or descending motion;
Silicon wafer 310, the cantilever 310 are arranged on the nearly sample deposition end on the top of Z axis mobile platform 3000;
Piezoelectricity element is provided with the X-axis mobile platform 100, the Y-axis mobile platform 200 and axle mobile platform 300 described in Z
Sub- control unit;The piezoelectricity sub-prime control unit includes the piezoelectric ceramics that elongation is directly proportional to electric field intensity square.
Wherein, on the piezoelectricity sub-prime control unit after applied voltage, piezoelectric ceramics can extend, so as to drive the X-axis
Mobile platform 100, the Y-axis mobile platform 200 or axle mobile platform 300 is moved described in Z, and the elongation of piezoelectric ceramics and electricity
Field intensity square is directly proportional.
In embodiments of the present invention, step S2 is specifically included:
Step S21, the first T-shaped groove is etched on mechanics induction apparatuss 120 by focused ion beam;
Step S22, etch the first T-shaped groove by focused ion beam on silicon;
Step S23, the I type convex shape samples being adapted with the I types groove are etched by focused ion beam on testing sample
Product.
Further, step S3 is specifically included:
Step S31, tungsten tipped probe is contacted with I type convex shape samples after, by platinum sedimentation by tungsten tipped probe and I type convex shape samples
Product bonding, and mobile tungsten tipped probe transports I type convex shape samples to one end and is fixed on the described second T-shaped groove;
Step S32, by focused ion beam irradiation tungsten tipped probe and the abutting edge of I type convex shape samples, will be tungsten tipped probe raised with I types
Shape sample is separated;
Step S33, I type convex shape samples are fixed on by the described second T-shaped groove by platinum sedimentation;
The other end of I type convex shape samples is fixed on described the by step S33, mobile X-axis mobile platform and Y-axis mobile platform
One T-shaped groove, and the field section by platinum sedimentation just I types convex shape sample is fixed on the described first T-shaped groove.
Specifically, the x-axis translational speed is 0.3-0.7nm/s;0.5nm/s is preferably embodiment.
Further, the top length of the described first T-shaped groove be 15 microns, bottom lengths be 2 microns, width be 6 micro-
Rice, depth are 4 microns.
Further, the top length of the described second T-shaped groove be 15 microns, bottom lengths be 2 microns, width be 6 micro-
Rice, depth are 4 microns.
Further, the length of the I types convex shape sample be 20 microns, width be 4 microns, thickness be less than 1 micron.
Preferably, X-axis moving range of the X-axis mobile platform 100 under roughcast formula be 0-8 mm, X-axis coarse motion speed
For 0.4 mm/s, X-axis Minimum sliding distance is 0.01 um;The X-axis movement model in the fine mode of the X-axis mobile platform 100
Enclose for 0-20 um, X-axis Minimum sliding distance is 0.1 nm;Y-axis moving range of the Y-axis mobile platform 200 under roughcast formula
For 0-8 mm, Y-axis coarse motion speed is 0.4 mm/s, and Y-axis Minimum sliding distance is 0.01 um;The Y-axis mobile platform 200 exists
Y-axis moving range under fine pattern is 0-20 um, and Y-axis Minimum sliding distance is 0.1 nm;The Z axis mobile platform 300 exists
Z axis moving range under roughcast formula is 0-8 mm, and Z axis translational speed is 0.4 mm/s, and Z axis Minimum sliding distance is 0.01 um;
The Z axis moving range in the fine mode of the Z axis mobile platform 300 is 0-20 um, and Z axis Minimum sliding distance is 0.1 nm.
Scanning electron microscope in situ detection device of the present invention is one and can realize to material by nanometer
Yardstick is observed to the dynamic in-situ of centimeter scale, the precision apparatus that can be tested to performances such as its physics simultaneously again.At present
The in-situ monitoring of nano-scale and cm size can be realized simultaneously without any set of device, less used and carried between two yardsticks
Dynamic transition in situ.Extension test is realized as carrier with the scanning electron microscope in situ detection device, can also be while right
The performances such as its mechanics are tested.
Why scanning electron microscope in situ detection device of the present invention is better than existing similar device, is because
The piezoelectricity sub-prime control unit design of its uniqueness so that its controllable displacement range can continuously from the Nano grade transition of microcosmic
To the micron/centimetre rank of macroscopic view, or and existing other any scanning electron microscope Platform Designings can be only done nanometer
Displacement on yardstick, or can be only done the displacement of micron/mm-scale, controllable motion is on microcosmic and macro-size
Separate, thus when material properties test is done, it is impossible to Line Continuity dynamic measuring control is entered to same position or material.Need special
Propose, platform moving displacement resolution can reach Ethylmercurichlorendimide(10-10m)Rank, equivalent to the distance of several atoms, this is also
The controllable minimum length scope of the current mankind.
Scanning electron microscope in situ detection device of the present invention simultaneously can applying power is minimum arrives nN ranks, be up to
10 N, for test object material, the scope of this applying power can cover the almost present mankind and can manufacture
All intensity material.Scanning electron microscope in situ detection device not only tests nanotube, and the performance of nanometer silk thread is gone back
The sample of micron and Centimeter Level, such as micrometer fibers or thin film can be tested.Also it is accurately controlled material to be continuously completed
Again to the displacement movement of millimeter from nanometer to micron, realize that the seriality from microcosmic perturbation to macroscopic appearance truly is moved
State is monitored, and real time imaging and data result synchronism output.
In sum, the mechanic property test method based on mechanics sensor provided by the present invention, step include:To treat
Test sample product are placed on sample deposition, are put into mechanics induction apparatuss and fix, the sample that silicon wafer is fixed on mobile platform top is put
Put area;The first T-shaped groove is etched on mechanics induction apparatuss with focused ion beam, the second T-shaped groove is etched on silicon;Together
When the I type convex shape samples being adapted with groove are etched on testing sample;Transport to I types after will be tungsten tipped probe bonding with sample
It is fixed in groove, tungsten tipped probe is separated with sample by electron beam irradiation;Start the video recording of ultramicroscope, mobile X-axis movement
Platform, until I type convex shape samples are pulled off;According to the pulling force that the multiframe consecutive image and mechanics induction apparatuss in video recording is measured
Data, obtain the mechanical property and load-deformation curve of testing sample.Present invention achieves the extension test and mechanics to material
Carried out Deng performance test simultaneously.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, and for those of ordinary skills, can
To be improved according to the above description or be converted, all these modifications and variations should all belong to the guarantor of claims of the present invention
Shield scope.
Claims (8)
1. a kind of mechanic property test method based on mechanics sensor, it is characterised in that the method comprising the steps of:
S1, testing sample is placed on sample deposition, and mechanics induction apparatuss are fixed on into scanning electron microscope in situ detection
Testing sample is positioned over sample deposition by the sample deposition side at the top of the X-axis mobile platform of device, and silicon wafer is solid
Due to the nearly sample deposition end on Z axis mobile platform top;Wherein, scanning electron microscope in situ detection device includes being arranged on
Y-axis mobile platform on pedestal, the X-axis mobile platform being arranged on Y-axis mobile platform, and the Z axis movement being arranged on pedestal
Platform, the sample deposition are arranged on the nearly Z axis mobile platform end on X-axis mobile platform top;
S2, the first T-shaped groove is etched on mechanics induction apparatuss by focused ion beam, and it is T-shaped to etch second on silicon
Groove, the first T-shaped groove constitute I type grooves with the described second T-shaped groove;Lost on testing sample by focused ion beam
Carve the I type convex shape samples being adapted with the I types groove;
S3, will be tungsten tipped probe bonding with I type convex shape samples after, I type convex shape samples are transported into into I type grooves fixed, and are led to
Cross electron beam irradiation tungsten tipped probe is separated with I type convex shape samples;
S4, the video recording for starting ultramicroscope, and to specify translational speed to move X-axis mobile platform, until by I type convex shape samples
Product are pulled off;
S5, the pulling force data measured according to the multiframe consecutive image and mechanics induction apparatuss in video recording, obtain the mechanics of testing sample
Performance and load-deformation curve.
2. mechanic property test method according to claim 1 based on mechanics sensor, it is characterised in that step S2
Specifically include:
S21, the first T-shaped groove is etched on mechanics induction apparatuss by focused ion beam;
S22, etch the second T-shaped groove by focused ion beam on silicon;
S23, the I type convex shape samples being adapted with the I types groove are etched by focused ion beam on testing sample.
3. mechanic property test method according to claim 2 based on mechanics sensor, it is characterised in that step S3
Specifically include:
S31, tungsten tipped probe is contacted with I type convex shape samples after, tungsten tipped probe is glued with I type convex shape samples by platinum sedimentation
Connect, and mobile tungsten tipped probe transports I type convex shape samples to one end and is fixed on the described second T-shaped groove;
S32, by focused ion beam irradiation tungsten tipped probe and the abutting edge of I type convex shape samples, by tungsten tipped probe and I type convex shape samples
Product are separated;
S33, I type convex shape samples are fixed on by the described second T-shaped groove by platinum sedimentation;
The other end of I type convex shape samples is fixed on described first T-shaped by S33, mobile X-axis mobile platform and Y-axis mobile platform
Groove, and the field section by platinum sedimentation just I types convex shape sample is fixed on the described first T-shaped groove.
4. mechanic property test method according to claim 3 based on mechanics sensor, it is characterised in that the mobile speed
Spend for 0.3-0.7nm/s.
5. mechanic property test method according to claim 4 based on mechanics sensor, it is characterised in that the mobile speed
Spend for 0.5nm/s.
6. mechanic property test method according to claim 2 based on mechanics sensor a, it is characterised in that T
The top length of type groove is 15 microns, bottom lengths are 2 microns, width is 6 microns, and depth is 4 microns.
7. mechanic property test method according to claim 2 based on mechanics sensor, it is characterised in that the 2nd T
The top length of type groove is 15 microns, bottom lengths are 2 microns, width is 6 microns, and depth is 4 microns.
8. mechanic property test method according to claim 2 based on mechanics sensor, it is characterised in that the I types are convex
The length for playing shape sample is 20 microns, width is 4 microns, thickness is less than 1 micron.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107167374A (en) * | 2017-06-28 | 2017-09-15 | 王学斌 | A kind of mechanism applied to testing machine synchronous acquisition view data |
CN111948205A (en) * | 2019-05-17 | 2020-11-17 | 中国航发商用航空发动机有限责任公司 | Sample placing block, sample placing device and sample detection method thereof |
CN112924275A (en) * | 2021-01-25 | 2021-06-08 | 武汉大学 | Micro-force measuring device, preparation method thereof and in-situ mechanical testing method |
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CN111948205A (en) * | 2019-05-17 | 2020-11-17 | 中国航发商用航空发动机有限责任公司 | Sample placing block, sample placing device and sample detection method thereof |
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