CN201623159U - 超快恢复开关模块 - Google Patents

超快恢复开关模块 Download PDF

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CN201623159U
CN201623159U CN 201020156995 CN201020156995U CN201623159U CN 201623159 U CN201623159 U CN 201623159U CN 201020156995 CN201020156995 CN 201020156995 CN 201020156995 U CN201020156995 U CN 201020156995U CN 201623159 U CN201623159 U CN 201623159U
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thyristor
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陈兴忠
颜书芳
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]

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Abstract

一种超快恢复开关模块，它包括三相桥式整流开关电路，它由六只超快恢复二极管芯片连接成的三相桥式整流电路和一个晶闸管芯片串接连接而成，晶闸管芯片串接在桥式整流电路的正极输出端；三相桥式整流开关电路中各元器件之间均采用铝丝导线以键合方式连接，三相桥式整流开关电路由弹性硅凝胶层和环氧树脂层封装在塑料外壳和紫铜底板之间。这种超快恢复开关模块不仅能适应启动时大电流冲击，而且适用的功率范围广，无需使用机械式开关，更利于整流模块的小型化，进一步降低制造成本，它还具有噪声低，电磁污染小，使用寿命长的特征。

Description

超快恢复开关模块
【技术领域】
本实用新型属于电力半导体器件领域，涉及超快恢复二极管芯片和晶闸管芯片的组合与连接，半导体器件的封装技术。
【背景技术】
目前三相整流桥在实际使用过程中，在开机瞬间的冲击电流过大，很容易造成整流器件本身或滤波电容的损坏。为此，人们通常采用以下三种方案加以克服：
第一种方案是在整流桥输出端串联一只负温度系数的电阻，如图1所示，这种方案只适用于小功率的场所。
第二种方案是整流桥输出端串接一只启动电阻，以减少启动电流，当工作稳定运行之后，用电磁式开关把电阻短路，如图2所示。这种方案的缺点是开关频繁动作很容易损坏，整体的可靠性不高，而且整流模块的体积较大，在许多使用空间有限制的场所则不能使用，不适应电控小型化的发展要求。
第三种方案是用三只二极管和三只晶闸管芯片组成的半控桥供电方案，如图3所示，这种方案技术较复杂，且需要使用三只晶闸管芯片，成本较高，用户难以接收。
在上述三种方案中，由于都使用普通二极管，在工作过程中不仅噪声比较大，而且存在严重的电磁干扰，这些缺陷不仅不利于整流模块自身的性能和寿命的稳定，而且会对电网产生电磁污染。
【实用新型内容】
本实用新型目的在于提供一种超快恢复开关模块，它能比较好地克服现有技术中存在的上述不足。
本实用新型采取的技术方案如下：
一种超快恢复开关模块，它包括紫铜底板、氮化铝陶瓷覆铜板、三相桥式整流开关电路、三只交流接线柱、二只直流接线柱、内部电极、铝丝导线、弹性硅凝胶层、环氧树脂层和塑料外壳，三相桥式整流开关电路由三相桥式整流电路和一个晶闸管芯片串接连接而成，三相桥式整流电路由六只超快恢复二极管芯片连接成，晶闸管芯片串接在桥式整流电路的正极输出端；氮化铝陶瓷覆铜板固定在紫铜底板上，三相桥式整流开关电路中的六只超快恢复二极管芯片和一只晶闸管芯片均固定在氮化铝陶瓷覆铜板上，三只交流接线柱均通过内部电极与三相桥式整流电路中的交流电输入点相连，二只直流接线柱均通过内部电极与三相桥式整流电路中的直流电输出点相连，超快恢复二极管芯片、晶闸管芯片与氮化铝陶瓷覆铜板之间采用铝丝导线以键合方式连接，三相桥式整流开关电路中各元器件之间均采用铝丝导线以键合方式连接，三相桥式整流开关电路由弹性硅凝胶层和环氧树脂层封装在塑料外壳和紫铜底板之间。
进一步，在晶闸管芯片的电流进入端设有正极输出接口，在晶闸管芯片的电流流出端依次设有晶闸管控制极和晶闸管辅助阴极。
在本实用新型中，由于设计了独特的三相桥式整流开关电路，它由六只超快恢复二极管和一只晶闸管芯片连接成，超快恢复二极管能使桥式整流电路的整电性能更好，噪声更低；晶闸管芯片取代现有技术第二种方案中的启动电阻和电磁式开关，在启动瞬间其阻值较大能减少启动电流，当工作稳定运行之后，它的阻值极小，这样的三相桥式整流开关电路不仅能适应启动时大电流冲击，而且适用的功率范围广，无需使用机械式开关，更利于整流模块的小型化，同时能大幅度降低整流模块的制造成本。由于超快恢复二极管和晶闸管的自身性能特征，由它们组合而成的整流开关电路的噪声低，电磁污染小，经实际试验，其噪声要比现有同类产品低10-15分贝，对电网的磁污染很小。由于整个模块采用申请人200610038365.9的超快恢复模块的专利封装技术，且在超快恢复二极管芯片和晶闸管芯片之间，超快恢复二极管芯片之间，芯片与电极之间均采用铝丝导线的键合方式连接，这种连接方式能极大减少连接应力，从而提高整个整流开关模块工作的可靠性和使用寿命。
【附图说明】
图1、图2、图3为处理普通整流电流开启电流偏大的三种技术方案图；
图4、图5是本实用新型的结构示意图；图5是图4的俯视图；
图6是本超快恢复开关模块的电路原理示意图；
图中，1-紫铜底板；2-氮化铝陶瓷覆铜板；3-超快恢复二极管芯片；
4-晶闸管芯片；5-交流接线柱；6-直流接线柱；7-内部电极；P4-正极输出接口；G7-晶闸管控制极；K8-晶闸管辅助阴极；8-铝丝导线；9-弹性硅凝胶层；10-环氧树脂层；11-塑料外壳。
【具体实施方式】
下面结合附图说明本实用新型的具体实施方式：
一种超快恢复开关模块，其特征是：它包括紫铜底板1、氮化铝陶瓷覆铜板2、三相桥式整流开关电路、三只交流接线柱5、二只直流接线柱6、内部电极7、铝丝导线8、弹性硅凝胶层9、环氧树脂层10和塑料外壳11，三相桥式整流开关电路由三相桥式整流电路和一个晶闸管芯片4串接连接而成，三相桥式整流电路由六只超快恢复二极管芯片3连接成，即六只超快恢复二极管芯片3连接成两两同向串联后的并联整流电路，超快恢复二极管芯片FD1与FD4串联，超快恢复二极管芯片FD2与FD5串联，超快恢复二极管芯片FD3与FD6串联，晶闸管芯片4串接在桥式整流电路的正极输出端，在晶闸管芯片4的电流进入端设有正极输出接口P4，在晶闸管芯片4的电流流出端依次设有晶闸管控制极G7和晶闸管辅助阴极K8，如图6所示；氮化铝陶瓷覆铜板2固定在紫铜底板1上，三相桥式整流开关电路中的六只超快恢复二极管芯片3和一只晶闸管芯片4均固定在氮化铝陶瓷覆铜板2上，三只交流接线柱5均通过内部电极7与三相桥式整流电路中的交流电输入点相连，二只直流接线柱6均通过内部电极7与三相桥式整流电路中的直流电输出点相连，超快恢复二极管芯片3、晶闸管芯片4与氮化铝陶瓷覆铜板2之间用铝丝导线8以键合方式连接，三相桥式整流开关电路中各元器件之间均采用铝丝导线8以键合方式连接，三相桥式整流开关电路由弹性硅凝胶层9和环氧树脂层10封装在塑料外壳11和紫铜底板1之间。

Claims (2)

1.一种超快恢复开关模块，其特征是：它包括紫铜底板(1)、氮化铝陶瓷覆铜板(2)、三相桥式整流开关电路、三只交流接线柱(5)、二只直流接线柱(6)、内部电极(7)、铝丝导线(8)、弹性硅凝胶层(9)、环氧树脂层(10)和塑料外壳(11)，三相桥式整流开关电路由三相桥式整流电路和一个晶闸管芯片(4)串接连接而成，三相桥式整流电路由六只超快恢复二极管芯片(3)连接成，晶闸管芯片(4)串接在桥式整流电路的正极输出端；氮化铝陶瓷覆铜板(2)固定在紫铜底板(1)上，三相桥式整流开关电路中的超快恢复二极管芯片(3)和晶闸管芯片(4)均固定在氮化铝陶瓷覆铜板(2)上，三只交流接线柱(5)均通过内部电极(7)与三相桥式整流电路中的交流电输入点相连，二只直流接线柱(6)均通过内部电极(7)与三相桥式整流电路中的直流电输出点相连，超快恢复二极管芯片(3)、晶闸管芯片(4)与氮化铝陶瓷覆铜板(2)之间采用铝丝导线(8)以键合方式连接，三相桥式整流开关电路中各元器件之间均采用铝丝导线(8)以键合方式连接，三相桥式整流开关电路由弹性硅凝胶层(9)和环氧树脂层(10)封装在塑料外壳(11)和紫铜底板(1)之间。
2.根据权利要求1所述超快恢复开关模块，其特征是：在晶闸管芯片(4)的电流进入端设有正极输出接口(P4)，在晶闸管芯片(4)的电流流出端依次设有晶闸管控制极(G7)和晶闸管辅助阴极(K8)。
CN 201020156995 2010-04-13 2010-04-13 超快恢复开关模块 Expired - Lifetime CN201623159U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101820227A (zh) * 2010-04-13 2010-09-01 陈兴忠 超快恢复开关模块

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101820227A (zh) * 2010-04-13 2010-09-01 陈兴忠 超快恢复开关模块

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