CN201569851U - Supercritical carbon dioxide gelatinizing system - Google Patents
Supercritical carbon dioxide gelatinizing system Download PDFInfo
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- CN201569851U CN201569851U CN2009203133851U CN200920313385U CN201569851U CN 201569851 U CN201569851 U CN 201569851U CN 2009203133851 U CN2009203133851 U CN 2009203133851U CN 200920313385 U CN200920313385 U CN 200920313385U CN 201569851 U CN201569851 U CN 201569851U
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- carbon dioxide
- photoresist
- supercritical carbon
- storage tank
- chamber
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Abstract
The utility model provides a supercritical carbon dioxide gelatinizing system, belonging to the field of semiconductor technology. The system comprises a storage device, at least one first storage tank containing carbon dioxide and one second storage tank containing a photoresist; an upercritical carbon dioxide gelatinizing chamber comprises a chamber body, a spray head used for spraying the carbon dioxide and the photoresist, a bracket used for supporting silicon wafers, and a temperature control device and a pressure detecting device communicated with the chamber respectively, wherein the spray head is arranged in the chamber and communicated to the storage device outside the chamber by a pump used for controlling the carbon dioxide and the photoresist; and the bracket is arranged in the chamber and below the spray head. By adopting the system, a film with uniform thickness and strong adhesive force can be formed, the process is simplified, the requirement for equipment and environment is low, simultaneously the applied supercritical carbon dioxide has good chemical stability, the surface tension is almost zero, and the system has no pollution to the environment.
Description
Technical field
The utility model relates to technical field of semiconductors, in particular to a kind of supercritical carbon dioxide coating system.
Background technology
In the present optical semiconductor carving technology, adopt the method for rotation gluing to apply photoresist usually.But existing method needs the dehydration in early stage cure and apply compound, complex process, and be easy to occur whole or local photoresist and silicon chip disengaging, phenomenon such as inhomogeneous.And, because the photoresist film thickness that existing method forms is relevant with rotational speed, so to such an extent as to when thickness reduces, cause the inaccurate phenomenon that is thrown out of in silicon chip location easily.In addition, than higher, it need carry out in super-clean environment this method for environmental requirement, and the film of generation is subjected to affected big, and the groove structure step coverage is poor.
In view of above shortcoming, limited of the development of the integrated circuit of present employing silicon chip to littler characteristic dimension direction.At present not suitable device is carried out coating technique in mode more suitably.
Summary of the invention
Can't carry out well applied problem and propose the utility model at glue spreading apparatus in the correlation technique, for this reason, fundamental purpose of the present utility model is to provide a kind of supercritical carbon dioxide coating system, one of to address the above problem at least.
The utility model provides a kind of supercritical carbon dioxide coating system, comprising: storage device, storage device comprise first storage tank that holds carbon dioxide and second storage tank that holds photoresist at least; Supercritical carbon dioxide gluing chamber comprises cavity; The shower nozzle of sparging carbon dioxide and photoresist, shower nozzle is positioned at cavity, and is communicated to the outer storage device of cavity by the pump that control carbon dioxide and photoresist spray; And the support of supporting silicon chip, support is positioned at cavity and is positioned at the below of shower nozzle; Temperature control equipment that is communicated with cavity and pressure-detecting device respectively.
By technique scheme of the present utility model, silicon chip is applied the operation of photoresist under the environment of supercritical carbon dioxide, can solve in the present photoetching process and apply weak effect, the environmental requirement height, problems such as complex process, can silicon chip surface form thickness evenly, the film of strong adhesion, and work simplification, equipment and environmental requirement are not high.Simultaneously, use the chemical stability of supercritical carbon dioxide good, surface tension is almost nil, and environmentally safe.
Description of drawings
Fig. 1 is the structural representation of the supercritical carbon dioxide coating system of the utility model one preferred embodiment.
Embodiment
In the utility model embodiment, a kind of supercritical carbon dioxide coating system is provided, in this implementation, utilize this coating system, can be by in supercritical carbon dioxide gluing chamber, utilizing supercritical carbon dioxide that photoresist is evenly distributed, thus make deposition photoresist thickness evenly and adhesion stronger.
Need to prove that under the situation of not conflicting, embodiment and the feature among the embodiment among the application can make up mutually.Describe the utility model below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
Fig. 1 is the structural representation according to the supercritical carbon dioxide coating system of the utility model embodiment.As shown in Figure 1, this system comprises:
Storage device, storage coating silicon wafers required coating material, photoresist for example, in the present embodiment, storage device comprises first storage tank 21 that holds carbon dioxide CO2 and second storage tank 22 that holds photoresist.Main pump 1 is connected to first storage tank 21, is used to control the delivery rate of carbon dioxide; Constant-flux pump 2 is connected to second storage tank 22, is used to control the delivery rate of photoresist;
Mix carbon dioxide and the mixer 4 of photoresist and the clarifier 5 of purification of carbon dioxide, mixer 4 is connected respectively to first storage tank 21 and second storage tank 22 by main pump 1 and constant-flux pump 2; Clarifier 5 is connected between mixer 4 and the supercritical carbon dioxide gluing chamber, in order to remove the impurity in the carbon dioxide;
The supercritical carbon dioxide gluing chamber that is communicated with clarifier 5 comprises a plurality of members that are used to spray silicon chip in the gluing chamber; Particularly, supercritical carbon dioxide gluing chamber comprises the cavity 6 as shell; The shower nozzle 8 of sparging carbon dioxide and photoresist, shower nozzle 8 is positioned at the top of cavity 6, be connected to clarifier 5, and be connected to the outer storage device of cavity, be used for required carbon dioxide and the photoresist of ejection in cavity 6 via clarifier 5, mixer 4, main pump 1 and constant-flux pump 2; The support 7 of supporting silicon chip 9, silicon chip 9 also can replace with other semiconductor chips, and support 7 is positioned at cavity 6 and is positioned at the below of shower nozzle 8, thereby make the silicon chip 9 of supporting can receive the photoresist that applies usefulness;
Cavity 6 is communicated with temperature control equipment 10, is used to control cavity 6 temperature inside.Particularly, temperature control equipment 10 comprises well heater and temperature indicating device, the pressure carbon dioxide of well heater in cavity 6 reaches and can to cavity 6 inner heating, reach the temperature of supercriticality up to the carbon dioxide temperature so that carbon dioxide is when reaching the pressure of supercriticality;
Cavity 6 is communicated with pressure-detecting device 11, is used for test chamber 6 pressure inside.
The separation vessel 12 and 13 of removing impurities is connected between the cavity 6 and first storage tank 21, is used for removing impurities; Separation vessel 13 can be so that separation vessel 12,13 be communicated with or be communicated with first storage tank 21, in order to steady pressure with valve 3 between first storage tank 21.
The principle that utilization supercritical carbon dioxide coating system as shown in Figure 1 carries out gluing is as follows:
At first, system is freezed.For example adopt the mode of cool circulation water that required parts are freezed; Secondly, system reaches behind the predetermined temperature release of carbon dioxide and to the carbon dioxide pressurization, and the purifying carbon dioxide after the pressurization is laggard goes into supercritical carbon dioxide gluing chamber; With pressurization of the carbon dioxide in the cavity in supercritical carbon dioxide gluing chamber and adjustment temperature, form the supercriticality of carbon dioxide; Make carbon dioxide circulation special time to remove the granule foreign in pipeline and the cavity under the pressure stability condition; Subsequently, spray in the cavity after photoresist and the carbon dioxide mix, photoresist evenly mixes with carbon dioxide in the environment of supercritical carbon dioxide, and deposits the surface of silicon chip equably, forms uniform photoresist film; To apply the remaining potpourri in back at last and carry out separating treatment.
In sum, by the foregoing description of the present utility model, the scheme of supercritical carbon dioxide coating system is provided, solved the environmental requirement height of present spraying, the uneven problem of film of spraying, work simplification, even, the free of contamination coating system of effect are provided, can obtain thickness evenly, the film of strong adhesion, work simplification, equipment and environmental requirement are not high.Good and the environmentally safe of the chemical stability of supercritical carbon dioxide.In addition, the utility model embodiment still can form homogeneous film to the silicon chip gluing with groove.
The above is a preferred embodiment of the present utility model only, is not limited to the utility model, and for a person skilled in the art, the utility model can have various changes and variation.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.
Claims (4)
1. a supercritical carbon dioxide coating system is characterized in that, described system comprises:
Storage device, described storage device comprise first storage tank that holds carbon dioxide and second storage tank that holds photoresist at least;
Supercritical carbon dioxide gluing chamber, it comprises: cavity; The shower nozzle of sparging carbon dioxide and photoresist, described shower nozzle is positioned at described cavity, and is communicated to the outer described storage device of described cavity by the pump that control carbon dioxide and photoresist spray; And the support of supporting silicon chip, described support is positioned at described cavity and is positioned at the below of described shower nozzle;
Temperature control equipment and the pressure-detecting device that is communicated with described cavity respectively.
2. supercritical carbon dioxide coating system according to claim 1 is characterized in that, described system also comprises the mixer that mixes carbon dioxide and photoresist, and it is connected between the pump and described shower nozzle of described control carbon dioxide and photoresist injection.
3. supercritical carbon dioxide coating system according to claim 2 is characterized in that described system also comprises clarifier, and it is connected between described mixer and the described shower nozzle.
4. supercritical carbon dioxide coating system according to claim 3, it is characterized in that, described system also comprises the separation vessel of removing impurities, described separation vessel is connected between described cavity and described first storage tank, and by with the pipeline of described first storage tank on valve be communicated with described first storage tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009203133851U CN201569851U (en) | 2009-10-27 | 2009-10-27 | Supercritical carbon dioxide gelatinizing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009203133851U CN201569851U (en) | 2009-10-27 | 2009-10-27 | Supercritical carbon dioxide gelatinizing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201569851U true CN201569851U (en) | 2010-09-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009203133851U Expired - Lifetime CN201569851U (en) | 2009-10-27 | 2009-10-27 | Supercritical carbon dioxide gelatinizing system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201569851U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113251307A (en) * | 2016-03-28 | 2021-08-13 | 长濑产业株式会社 | Liquid carbon dioxide supply device and coating device |
| CN115090437A (en) * | 2022-06-02 | 2022-09-23 | 华中科技大学 | Supercritical fluid-assisted electrospray film-making equipment and method |
-
2009
- 2009-10-27 CN CN2009203133851U patent/CN201569851U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113251307A (en) * | 2016-03-28 | 2021-08-13 | 长濑产业株式会社 | Liquid carbon dioxide supply device and coating device |
| CN115090437A (en) * | 2022-06-02 | 2022-09-23 | 华中科技大学 | Supercritical fluid-assisted electrospray film-making equipment and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Microelectronics Institute, Chinese Academy of Sciences, 3 north earth road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100901 |