CN201532266U - Non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and sensing device thereof - Google Patents

Non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and sensing device thereof Download PDF

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Publication number
CN201532266U
CN201532266U CN2009200878735U CN200920087873U CN201532266U CN 201532266 U CN201532266 U CN 201532266U CN 2009200878735 U CN2009200878735 U CN 2009200878735U CN 200920087873 U CN200920087873 U CN 200920087873U CN 201532266 U CN201532266 U CN 201532266U
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China
Prior art keywords
sensing unit
light source
optical fiber
wideband light
optical fibre
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Expired - Fee Related
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CN2009200878735U
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Chinese (zh)
Inventor
李玉林
黎敏
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Wuhan long Sensing Technology Co., Ltd.
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Wuhan Shenzhou Photoelectric Detection Equipment Co Ltd
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Abstract

The utility model discloses a non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and a sensing device thereof, which relates to a temperature sensor. The structure of the sensing unit is as follows: an input optical fiber (17), a semiconductor chip (14) and an output optical fiber (18) are connected in sequence from front to back, thus forming an optical channel; the optical channel is used as a central shaft and is wrapped with a fixed sleeve (11), an alignment sleeve (16), a heat conduction silicone grease (15) and a ceramic sleeve (13) in sequence from inside to outside, thus forming the body of the sensing unit (10); and two ends of the body of the sensing unit are respectively provided with a fastener (12), thus forming the whole body of the sensing unit (10). The sensor has simple structure, small volume, convenient installation and low cost; the sensor is packaged with non-metallic ceramic, thus being immune to electromagnetic interference; and the system can be easily compensated, the resolution for temperature detection is high, and the application range is wide.

Description

Non-metallic ceramic package semiconductor absorption-type optical fiber sensing unit and sensing device thereof
Technical field
The utility model relates to a kind of temperature sensor, relates in particular to a kind of non-metallic ceramic package semiconductor absorption-type optical fiber sensing unit and sensing device thereof.
Background technology
Design from the product development to semiconductor absorption-type fibre optic temperature sensor in the past, existing greatest problem is to adopt heat conductivility good metal material package such as copper, aluminium in its structure, the main problem that has two aspects of this encapsulation:
1, insulativity
In the application of environment such as the high pressure in electric power power transmission and transformation field, strong-electromagnetic field, the focus that Subscriber Unit is queried is exactly the metal parts in the sensing unit, and after consider to creep distance, the class of insulation, the application of Related product is subjected to great restriction.
2, process structure aspect
The metallization packaged optical patchcord structure that follows conventional lines realizes than being easier to, but is subjected to the communication products specification limits that volume is difficult to further reduce, and causes being not easy in small space settling.
Summary of the invention
The purpose of this utility model just is to overcome the shortcoming and defect that existing absorption-type semiconductor optical fiber temperature measurement technology exists, and a kind of low cost is provided, is not subjected to the non-metallic ceramic package semiconductor absorption-type optical fiber sensing unit and the sensing device thereof of electromagnetic interference (EMI).
The purpose of this utility model is achieved in that
Under the prerequisite that ensures measurement range and precision, the rule of utilizing semi-conductive long wave absorption edge to drift about with temperature by the transmitted optical power I (T) of direct detection light signal after semiconductor material absorbs, calculates dut temperature.
I(T)＝α(T)I 0
In the formula, I 0Be input optical power, α (T) is the absorption coefficient of different temperatures correspondence.
Through behind the photodetector, pass through amplification, filtering again, after after the A/D conversion, the input microprocessor calculates and the demonstration dut temperature.
Specifically, semiconductor absorption-type optical fiber sensing unit (abbreviation sensing unit) comprises fixed sleeving, securing member, porcelain bushing, semiconductor wafer, heat-conducting silicone grease, collimation sleeve pipe, input optical fibre and output optical fibre;
Connect to form a kind of optical channel before and after input optical fibre, semiconductor wafer and the output optical fibre successively;
With the optical channel is central shaft, from inside to outside, is enclosed with the body that fixed sleeving, collimation sleeve pipe, heat-conducting silicone grease and porcelain bushing are formed sensing unit successively;
Two ends at body is connected with the overall of securing member composition sensing unit respectively.
Its principle of work is:
Owing to the absorption edge of semiconductor wafer can be drifted about along with variation of temperature, cause changing by the luminous energy of semiconductor wafer, between luminous energy and temperature, show certain correlativity.Therefore,, just can extrapolate the variable quantity of the extinction of semiconductor wafer, can calculate variation of temperature, thereby reach the purpose of measuring temperature by measuring the converted quantity of outgoing luminous power.
Compare with the fibre optic temperature sensor of other types, the utlity model has following advantage and good effect:
1, simple in structure, volume is little, and is easy for installation, with low cost;
2, non-metallic ceramic package is not subjected to electromagnetic interference (EMI);
3, system is easy to compensation, and thermometric resolution height is applied widely.
Description of drawings
Fig. 1 is the structural representation of this sensing unit;
Fig. 2 is the block diagram of this sensing device;
Fig. 3 is the block diagram of power control unit in this sensing device.Wherein:
The 10-sensing unit,
The 11-fixed sleeving, the 12-securing member, the 13-porcelain bushing,
The 14-semiconductor wafer, the 15-heat-conducting silicone grease, 16-collimates sleeve pipe;
The 17-input optical fibre, the 18-output optical fibre;
The 20-wideband light source;
The 30-power control unit,
The 31-analog to digital converter, 32-single-chip microcomputer, 33-digital to analog converter;
The 40-photodetector.
The 50-subsequent process circuit;
The 60-microprocessor.
English to Chinese
SLED:superluminent light emitting diode, super-radiance light emitting diode;
PIN:positive-intrinsic-negative, p type-Intrinsical-n type;
FWHM:full-width-half-maximum, the peak value half-breadth.
Embodiment
Describe in detail below in conjunction with drawings and Examples:
One, sensing unit 10
1, overall
As Fig. 1, this sensing unit 10 comprises fixed sleeving 11, securing member 12, porcelain bushing 13, semiconductor wafer 14, heat-conducting silicone grease 15, collimation sleeve pipe 16, input optical fibre 17 and output optical fibre 18;
Its position and annexation are:
Input optical fibre 17, semiconductor wafer 14 and output optical fibre 18 front and back connect to form a kind of optical channel successively;
With the optical channel is central shaft, from inside to outside, is enclosed with the body that fixed sleeving 11, collimation sleeve pipe 16, heat-conducting silicone grease 15 and porcelain bushing 13 are formed sensing unit 10 successively;
Two ends at body is connected with the overall of securing member 12 composition sensing units 10 respectively.
Its principle of work is:
Owing to the absorption edge of semiconductor wafer 14 can be drifted about along with variation of temperature, cause changing by the luminous energy of semiconductor wafer 14, between luminous energy and temperature, show certain correlativity.Therefore,, just can extrapolate the variable quantity of the extinction of semiconductor wafer 14, can calculate variation of temperature, thereby reach the purpose of measuring temperature by measuring the converted quantity of outgoing luminous power.
2, functional block
(1) fixed sleeving 11
Fixed sleeving 11 is a kind of ceramic cores; Its function is fixing and the protection optical fiber end, forms with collimation sleeve pipe 16 to closely cooperate, and assurance input optical fibre 17 and output optical fibre 18 are aimed at.
(2) securing member 12
Securing member 12 is a kind of insulation (plastics) end caps, inboard band stopper slot, cooperate with the taper projection of porcelain bushing 13, play the effect fastening, guarantee can not cause loss between input optical fibre 17, semiconductor wafer 14 and the output optical fibre 18 because of thermal expansion to inner structure; There is the optical fiber through hole at the center.
(3) porcelain bushing 13
Porcelain bushing 13 is a kind of thermal conductive ceramic pipes, and the outside, both ends has the taper salient line.Its function is protection, fastening sensing unit 10 inner structures, has good heat conductivity.
(4) semiconductor wafer 14
Semiconductor wafer 14 is to be varied with temperature and twin polishing sheet that the sensitive material (semiconductor single crystal material) that drifts about constitutes by a kind of absorption edge.Present the type finished product semiconductor single crystal material on the market, mainly as the substrate material of laser instrument and detector, this semiconductor wafer 14 is that the semiconductor single crystal wafers has been carried out further processing---twin polishing; Its function is to produce absorption coefficient with variation of temperature, is the core component of sensing unit 10.
The selection of sensitive material: the drift of long wave absorption edge and temperature have correlativity preferably, and simultaneously, rate of change is big as far as possible.This just requires: the monotropic area of the absorption edge of sensitive material in the light source light spectrum coverage.
(5) heat-conducting silicone grease 15
Heat-conducting silicone grease 15 is a kind of electron device heat-conducting glues commonly used, and heat-conducting silicone grease 15 is all filled to guarantee sensing unit 10 thermal response fast in all spaces.
(6) collimation sleeve pipe 16
Collimation sleeve pipe 16 is a kind of parts commonly used; Its function be fixing and collimated light via input optical fibre 17-semiconductor wafer 14-output optical fibre 18, guarantee to make the incident optical power that arrives semiconductor wafer 14 to enter as far as possible fully in the output optical fibre 18.
(7) input optical fibre 17 and output optical fibre 18
Input optical fibre 17 and output optical fibre 18 are a kind of parts commonly used; Its function is: input optical fibre 17 is used for the input light conduction from light source 20, and output optical fibre 18 is used to export to the light conduction of detector 40.
Two, sensing device
1, overall
As Fig. 2, this sensing device is a kind of temperature sensing device based on this sensing unit, comprises sensing unit 10, wideband light source 20, power control unit 30, photodetector 40, subsequent process circuit 50 and microprocessor 60;
Wideband light source 20 is connected with power control unit 30;
The output terminal of wideband light source 20 is connected with the input end of sensing unit 10; The output terminal of sensing unit 10 is connected with photodetector 40;
Photodetector 40, subsequent process circuit 50 and microprocessor 60 are connected successively.
Its principle of work is:
It is I that wideband light source 20 sends luminous power 0Light, through the emergent light power I of semiconductor wafer 14 in the sensing unit 10 1=α I 0, wherein α is an absorption coefficient.Emergent light arrives the luminous power I of photodetector 40 through Optical Fiber Transmission 2=α I 1=α I 0Calculate the value of α through subsequent process circuit 50 and microprocessor 60, can obtain temperature value measured by the absorption coefficient of semiconductor wafer 14 and the relation of temperature again.
2, functional block
(1) sensing unit 10
Sensing unit 10 is semiconductor absorption-type optical fiber sensing described in the utility model unit.
(2) wideband light source 20
Wideband light source 20 is a kind of broad band laser light sources, and it is 870nm that the utility model is selected peak wavelength for use, and FWHM is the SLED semiconductor laser of 26nm.The built in light electric explorer is arranged in the wideband light source 20, and the built in light electric explorer is a kind of general light electric diode, finishes the conversion of light signal to electric signal, and electric output pin is provided.
(3) power control unit 30
Power control unit 30 is a kind of luminous power feedback control circuits, according to the variation of light source 20 monitoring luminous powers, controls the size of injection current in real time, to guarantee the stable of light source 20 output powers.
Power control unit 30 is a home-built equipment, is placed on light source 20 control panels.
As Fig. 3, power control unit 30 comprises analog to digital converter (A/D) 31, single-chip microcomputer 32 and digital to analog converter (D/A) 33 and light source 20 composition FEEDBACK CONTROL;
Wideband light source 20, analog to digital converter (A/D) 31, single-chip microcomputer 32, digital to analog converter (D/A) 33 and wideband light source 20 front and back closed loop successively are connected.
Its principle of work is: when wideband light source 20 causes the Output optical power change owing to factors such as temperature, at first via the built in light electric explorer opto-electronic conversion in the wideband light source 20, again via analog to digital converter (A/D) 31 analog to digital conversion, the back is discerned by single-chip microcomputer 32, and by digital to analog converter (D/A) 33 digital-to-analog conversions, the supplying electric current of control wideband light source 20 keeps the stable of Output optical power.
(1) analog to digital converter (A/D) 31
Analog to digital converter (A/D) the 31st, a kind of is the general-purpose device of digital signal with analog signal conversion; The electrical signal conversion that is used for opto-electronic conversion is come is the digital signal of single-chip microcomputer 32 needs, handles for single-chip microcomputer 32;
Select the AD7708 chip of U.S. ADI company for use.
(2) single-chip microcomputer 32
Single-chip microcomputer 32 is a kind of general programmable central processing units; Realization is to the judgement and the control of wideband laser power variation;
Select ARM7 series 440DX chip for use.
(3) digital to analog converter (D/A) 33
Digital to analog converter (D/A) the 33rd, a kind of general-purpose device that digital signal is converted to simulating signal; Be used for the output control command of single-chip microcomputer 33 is converted to the simulating signal of control laser instrument 20;
Select the AD5663 chip of U.S. ADI company for use.
(4) photodetector 40
PIN photodiode 40 is a kind of photoelectric commutators commonly used, and the utility model is selected coaxial tail fiber type PIN photodiode for use.
(5) subsequent process circuit 50
Subsequent process circuit 50 is a kind of amplification, filtering and analog-to-digital circuit of comprising commonly used, and the utility model designs production voluntarily.
(6) microprocessor 60;
Microprocessor 60 is a kind of microprocessors commonly used, and it is that the S3C44B0 of kernel is as microprocessor that the utility model is selected for use with ARM7TDMI.

Claims (8)

1. non-metallic ceramic package semiconductor absorption-type optical fiber sensing unit is characterized in that:
This sensing unit (10) comprises fixed sleeving (11), securing member (12), porcelain bushing (13), semiconductor wafer (14), heat-conducting silicone grease (15), collimation sleeve pipe (16), input optical fibre (17) and output optical fibre (18);
Connect to form a kind of optical channel before and after input optical fibre (17), semiconductor wafer (14) and the output optical fibre (18) successively;
With the optical channel is central shaft, from inside to outside, is enclosed with the body that fixed sleeving (11), collimation sleeve pipe (16), heat-conducting silicone grease (15) and porcelain bushing (13) are formed sensing unit (10) successively;
Two ends at body is connected with the overall of securing member (12) composition sensing unit (10) respectively.
2. by the described sensing unit of claim 1, it is characterized in that:
Fixed sleeving (11) is a kind of ceramic core.
3. by the described sensing unit of claim 1, it is characterized in that:
Securing member (12) is a kind of insulated end cover, inboard band stopper slot, and there is the optical fiber through hole at the center.
4. by the described sensing unit of claim 1, it is characterized in that:
Porcelain bushing (13) is a kind of thermal conductive ceramic pipe, and the outside, both ends has the taper salient line.
5. by the described sensing unit of claim 1, it is characterized in that:
Semiconductor wafer (14) is to be varied with temperature and twin polishing sheet that the semiconductor single crystal material that drifts about is made by a kind of absorption edge, requires the monotropic area of absorption edge in the light source light spectrum coverage of sensitive material.
6. sensing device based on the described sensing unit of claim 1 is characterized in that:
This sensing device comprises sensing unit (10), wideband light source (20), power control unit (30), photodetector (40), subsequent process circuit (50) and microprocessor (60);
Wideband light source (20) is connected with power control unit (30);
The output terminal of wideband light source (20) is connected with the input end of sensing unit (10); The output terminal of sensing unit (10) is connected with photodetector (40);
Photodetector (40), subsequent process circuit (50) and microprocessor (60) are connected successively.
7. by the described sensing device of claim 6, it is characterized in that:
Wideband light source (20) is a kind of broad band laser light source, and the built in light electric explorer is wherein arranged.
8. by the described sensing device of claim 6, it is characterized in that:
Power control unit (30) comprises analog to digital converter (31), single-chip microcomputer (32) and digital to analog converter (33), and wideband light source (20) is formed feedback control circuit;
Wideband light source (20), analog to digital converter (31), single-chip microcomputer (32), digital to analog converter (33) and wideband light source (20) front and back closed loop successively are connected.
CN2009200878735U 2009-08-07 2009-08-07 Non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and sensing device thereof Expired - Fee Related CN201532266U (en)

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Application Number Priority Date Filing Date Title
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102435349A (en) * 2011-11-22 2012-05-02 武汉理工大学 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system
CN103134607A (en) * 2011-11-23 2013-06-05 成都酷玩网络科技有限公司 Sing-optical-path semiconductor absorption-type optical fiber temperature sensor
CN104729752A (en) * 2015-03-24 2015-06-24 中国电子科技集团公司第八研究所 Non-metal fiber grating high temperature sensor and manufacturing method thereof
CN105043281A (en) * 2015-05-12 2015-11-11 东北电力大学 Fiber grating strain sensor and manufacturing method and forming die thereof
CN105229875A (en) * 2013-03-21 2016-01-06 二极管激光器激光线发展与销售有限公司 Laser assembly
CN116577890A (en) * 2023-07-07 2023-08-11 成都亨通光通信有限公司 Layer stranded type mining optical cable

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102435349A (en) * 2011-11-22 2012-05-02 武汉理工大学 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system
CN102435349B (en) * 2011-11-22 2014-07-02 武汉理工大学 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system
CN103134607A (en) * 2011-11-23 2013-06-05 成都酷玩网络科技有限公司 Sing-optical-path semiconductor absorption-type optical fiber temperature sensor
CN105229875A (en) * 2013-03-21 2016-01-06 二极管激光器激光线发展与销售有限公司 Laser assembly
CN104729752A (en) * 2015-03-24 2015-06-24 中国电子科技集团公司第八研究所 Non-metal fiber grating high temperature sensor and manufacturing method thereof
CN105043281A (en) * 2015-05-12 2015-11-11 东北电力大学 Fiber grating strain sensor and manufacturing method and forming die thereof
CN105043281B (en) * 2015-05-12 2017-09-05 东北电力大学 A kind of fiber Bragg grating strain sensor and preparation method thereof and mould
CN116577890A (en) * 2023-07-07 2023-08-11 成都亨通光通信有限公司 Layer stranded type mining optical cable
CN116577890B (en) * 2023-07-07 2023-09-19 成都亨通光通信有限公司 Layer stranded type mining optical cable

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GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: WUHAN FEILONG SENSING TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: WUHAN SHENZHOU OPTOELECTRONIC TESTING EQUIPMENT CO., LTD.

Effective date: 20120705

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 430070 NO.397, LUOSHI ROAD, HONGSHAN DISTRICT, WUHAN CITY, HUBEI PROVINCE TO: 430000 A201-A215, 2/F, YIQIYANFA HOUSE, SHUGUANG VILLAGE, DONGHU DEVELOPMENT AREA, WUHAN CITY, HUBEI PROVINCE

TR01 Transfer of patent right

Effective date of registration: 20120705

Address after: 430000, East Lake Wuhan Development Zone, Hubei province Shuguang Village Phase I research and development building, two floor, A201-A215

Patentee after: Wuhan long Sensing Technology Co., Ltd.

Address before: 430070 Hubei Province, Wuhan city Hongshan District Luoshi Road No. 397

Patentee before: Wuhan Shenzhou Photoelectric Detection Equipment Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100721

Termination date: 20170807

CF01 Termination of patent right due to non-payment of annual fee