CN102435349B - Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system - Google Patents

Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system Download PDF

Info

Publication number
CN102435349B
CN102435349B CN201110372987.6A CN201110372987A CN102435349B CN 102435349 B CN102435349 B CN 102435349B CN 201110372987 A CN201110372987 A CN 201110372987A CN 102435349 B CN102435349 B CN 102435349B
Authority
CN
China
Prior art keywords
optical fiber
optical fibre
sensitive unit
temperature sensitive
communication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110372987.6A
Other languages
Chinese (zh)
Other versions
CN102435349A (en
Inventor
黎敏
祝霁洺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan University of Technology WUT
Original Assignee
Wuhan University of Technology WUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan University of Technology WUT filed Critical Wuhan University of Technology WUT
Priority to CN201110372987.6A priority Critical patent/CN102435349B/en
Publication of CN102435349A publication Critical patent/CN102435349A/en
Application granted granted Critical
Publication of CN102435349B publication Critical patent/CN102435349B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention relates to a communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and a sensing system. The optical fiber temperature sensitive unit comprises a D-shaped metal sleeve with step structure limiting and thread locking, input optical fiber, output optical fiber and a semiconductor chip of which the absorption edge is located in a C waveband, wherein two ends of the D-shaped metal sleeve are in threaded connection with an input end lock sleeve and an output end lock sleeve, and an optical channel, which is formed by sequentially connecting the input optical fiber, the semiconductor chip of which the absorption edge is located in the C waveband and the output optical fiber from front to rear, is fixed in the D-shaped metal sleeve. The optical fiber temperature sensitive unit and the sensing system provided by the invention have the following advantages: 1. all the devices are communication standard devices, and the system cost is low; 2. a cylindrical metal sleeve packaging design with step structure limiting and thread locking is adopted, thus the sensitive unit is stable, has good thermal conductivity, and is not interfered by external vibration; and 3. the connection with a secondary meter is realized by adopting a standard optical fiber interface, the system is easy to compensate, and higher temperature measurement resolution and precision can be realized.

Description

Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensor-based system
Technical field
The present invention relates to a kind of realize thermometric device in conjunction with Optical Fiber Transmission and photodetector system, concrete a kind of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and the sensor-based system of relating to, belongs to technical field of optical fiber sensing.
Background technology
From most improvement and designs to semiconductor absorption-type fibre optic temperature sensor in the past, nearly all scheme all adopts the similar structures of GaAs sensitive material, 850nm wave band light source and multimode optical fiber.This structure is mainly deposited problem both ways:
1, principle aspect
In order to obtain large linear temperature-measuring range, just need to select the wider light source of spectrum, very difficult at 850nm wave band.Meanwhile, along with the rising of temperature, the spectral-transmission favtor of GaAs reduces gradually.Amplitude of variation in high-temperature part transmissivity diminishes, and sensitivity declines rapidly.Therefore, the expansion of the temperature-measuring range of sensor conflicts mutually with the raising of sensitivity, finally makes the measuring accuracy in certain temperature-measuring range not high.
2, process structure aspect
Multimode optical fiber and related device cost are high, and loss is large, cause telecommunication obstacle.And volume is difficult to further dwindle and improve.
Chinese patent CN101344439 discloses a kind of construction method of optical fibre temperature survey apparatus, although introduced the software algorithm that improves system stability, still continues to use GaAs temperature-sensing element, does not break away from the limited problem of light source.
The Chinese patent open file CN101598608 that we apply in earlier stage, a kind of " semiconductor reflection-type optical fiber temperature sensing probe and device " that is intended to overcome the above problems proposed, it has solved the problem that traditional GaAs absorption-type sensor light source is limited and installation is inconvenient, but because semiconductor die sheet material thermo-optical coeffecient is too small, thereby exist measurement sensitivity limit by demodulation techniques, cannot realize more high-precision application.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of semiconductor absorption-type fiber optic temperature sensing unit and sensor-based system thereof that works in general communication C-band for above-mentioned prior art, due to compatible communication C-band device used and standard, it is low and be not subject to the advantage of electromagnetic interference (EMI) that it has cost.
The present invention solves the technical scheme that aforementioned technical problem adopts: communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, it is characterized in that including the semiconductor wafer that and D shape metal sleeve, input optical fibre, output optical fibre and absorption edge screw-threaded coupling spacing with ledge structure are positioned at C-band, the two ends of D type metal sleeve are threaded with input end locking sleeve, output terminal locking sleeve, fix by input optical fibre, absorption edge and be positioned at the semiconductor wafer of C-band and the optical channel that output optical fibre front and back connect to form successively in described D type metal sleeve.
press such scheme, described input optical fibre and output optical fibre are respectively through input end locking sleeve and output terminal locking sleeve.
press such scheme, axle centered by optical channel, from inside to outside, also parcel is provided with input end ceramic core, output terminal ceramic core and collimation sleeve pipe successively, input end ceramic insertion core, output terminal ceramic insertion core respectively with collimation sleeve pipe wringing fit, and be connected with D shape metal sleeve with output terminal locking sleeve by input end locking sleeve.
press such scheme, the semiconductor wafer that described absorption edge is positioned at C-band is the monocrystalline InGa that carries out twin polishing processing 0. 3936 as 0. 8453 p wafer, its absorption edge is positioned at 1500nm wave band.
semiconductor absorption-type fiber temperature sensing system, comprises and adopts above-mentioned communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, light source, power control unit, photodetector, subsequent process circuit and microprocessor; The output terminal of described light source is connected with the input optical fibre of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, and power control unit is connected with light source, and the output optical fibre of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit is connected with photodetector; Photodetector, subsequent process circuit and microprocessor are connected successively.
Principle of work of the present invention is:
Because the absorption edge of semiconductor material can be drifted about along with the variation of temperature, cause changing by its luminous energy, between luminous energy and temperature, show certain correlativity.Therefore, by measuring the converted quantity of outgoing luminous power, just can extrapolate the light absorbing variable quantity of wafer, and then calculate the variation of temperature, realize thermometric object.Transmitted optical power by direct detection light signal after semiconductor material absorbs i (T), calculate dut temperature:
Figure 15153DEST_PATH_IMAGE001
In formula, i 0 for input optical power, α(T) be the absorption coefficient of semiconductor wafer corresponding to different temperatures.
Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit of the present invention is connected with microprocessor with photodetector, subsequent process circuit (comprising signal condition, data processing and display module), and result after treatment transfers to central control host or output display dut temperature.
Compared with the fiber optic temperature sensing unit of other types, the present invention has following advantages and good effect:
1, temperature sensor works in standard traffic C-band, and all devices all adopt communication standard device, and system cost is cheap;
2, adopt with the spacing cylindrical metal sleeve pipe package design that adds screw-threaded coupling of ledge structure, sensing unit is stable, thermal conductivity is good, not disturbed by extraneous vibration;
3, adopt standard fiber interface to be connected with secondary instrument, system is easy to compensation, can realize higher thermometric resolution and precision.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is system construction drawing of the present invention.
Embodiment
Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, it is characterized in that including the semiconductor wafer 16 that and D shape metal sleeve 13, input optical fibre 11, output optical fibre 19 and absorption edge screw-threaded coupling spacing with ledge structure are positioned at C-band, the two ends of D type metal sleeve 13 are threaded with input end locking sleeve 12, output terminal locking sleeve 18, and interior the fixing of described D type metal sleeve 13 is positioned at the semiconductor wafer 16 of C-band and the optical channel that output optical fibre 19 front and back connect to form successively by input optical fibre 11, absorption edge.
Press such scheme, described input optical fibre 11 and output optical fibre 19 are respectively through input end locking sleeve 12 and output terminal locking sleeve 18.
Press such scheme, axle centered by optical channel, from inside to outside, also parcel is provided with input end ceramic core 15, output terminal ceramic core 17 and collimation sleeve pipe 14 successively, input end ceramic insertion core 15, output terminal ceramic insertion core 17 respectively with collimation sleeve pipe 14 wringing fits, and be connected with D shape metal sleeve with output terminal locking sleeve 18 by input end locking sleeve 12.
Press such scheme, the semiconductor wafer 16 that described absorption edge is positioned at C-band is the monocrystalline InGa that carries out twin polishing processing 0. 3936as 0. 8453p wafer, its absorption edge is positioned at 1500nm wave band.
Semiconductor absorption-type fiber temperature sensing system, comprises and adopts above-mentioned communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, light source, power control unit, photodetector, subsequent process circuit and microprocessor; The output terminal of described light source is connected with the input optical fibre of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, and power control unit is connected with light source, and the output optical fibre of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit is connected with photodetector; Photodetector, subsequent process circuit and microprocessor are connected successively.
Below in conjunction with drawings and Examples, the present invention is described in further details:
As shown in Figure 1, the present invention includes the semiconductor wafer 16 that input optical fibre 11 and output optical fibre 19, input end locking sleeve 12, output terminal locking sleeve 18, D type metal sleeve 13, collimation sleeve pipe 14, absorption edge are positioned at C-band, and input end ceramic insertion core 15, output terminal ceramic insertion core 17;
Its position and annexation are: semiconductor wafer 16 and output optical fibre 19 front and back that input optical fibre 11, absorption edge are positioned at C-band connect to form a road optical channel successively; Axle centered by optical channel, from inside to outside, be enclosed with successively input end ceramic insertion core 15, output terminal ceramic insertion core 17, collimation sleeve pipe 14 and D type metal sleeve 13, form body of the present invention, its two ends is connected with respectively input end locking sleeve 12 and output terminal locking sleeve 18, composition communication C waveband semiconductor absorption type optical fiber temperature sensitive unit.
Introduce in detail each functional block of the present invention below:
1) input end ceramic insertion core 15 and output terminal ceramic insertion core 17
Input end ceramic insertion core 15, output terminal ceramic insertion core 17 are ceramic core, and its function is fixing and the end of protection optical fiber, forms and closely cooperates with collimation sleeve pipe 14, guarantees the optical axis alignment of input optical fibre 11 and output optical fibre 19;
2) collimation sleeve pipe 14
Collimation sleeve pipe 14 is a kind of standard components; Its function is fix and guarantee that light transmits via input optical fibre 11-semiconductor wafer 16-output optical fibre 19, guarantees the incident optical power that arrives semiconductor wafer 16 is coupled in output optical fibre 19 as far as possible completely;
3) input end locking sleeve 12, output terminal locking sleeve 18
Centered by input end locking sleeve 12 and output terminal locking sleeve 18 are equal, there is through hole, the metal cylinder of a step of outer wall belt, outside, one end band coupling screw thread that diameter is little, threaded engagement with D shape metal sleeve 13, play input end ceramic insertion core 15, absorption edge are positioned to the semiconductor wafer 16 of C-band and the effect that output terminal ceramic insertion core 17 tightens up, guarantee that input optical fibre 11, absorption edge can be because thermal expansion causes loss between the semiconductor wafer 16 of C-band and output optical fibre 19, its central through hole guarantee optical fiber by and location;
4) absorption edge is positioned at the semiconductor wafer 16 of C-band
Varied with temperature and twin polishing sheet that the sensitive material (its absorption edge is positioned at C-band, as InGaAsP and SiC) that drifts about forms by a kind of absorption edge.At present the type finished product semiconductor single crystal material on the market, mainly as the substrate material of laser instrument and detector.The semiconductor wafer that absorption edge of the present invention is positioned at C-band is to select monocrystalline InGa according to determined operation wavelength 0. 3936as 0. 8453p wafer, this wafer adopts the Britain Tomas Swan 3 × 2FT of company system and MOCVD standard technology, on n-InP, grow successively n-InP cushion and InGaAsP layer, the p-InP overlayer of finally growing forms, and semiconductor single crystal material has been carried out to further processing---twin polishing; Its function is to produce absorption coefficient to change with temperature, is core component of the present invention;
The selection of sensitive material: long wave absorption edge is at communication C-band, and its drift has good correlativity with temperature, and meanwhile, rate of temperature change is large as far as possible, and this just requires: the monotropic area of the absorption edge of sensitive material in light source light spectrum coverage;
5) D type metal sleeve 13
D type metal sleeve 13 is the good metal of thermal conductivity (as copper, aluminium and stainless steel etc.) material sleeve pipe, inner band limited step, and stepped hole inner side in two ends is threaded, and its function is protection, tightens up inner structure of the present invention, and guarantees good heat conductivity; Cylinder outside polishes the plane of a 3mm along its length, and the design of D type can anchor on measured piece sleeve pipe closely, easily;
6) input optical fibre 11 and output optical fibre 19
Input optical fibre 11 and output optical fibre 19 are standard single mode telecommunication optical fiber SM-28; Its function is: input optical fibre 11 is for the input light from light source 20 is conducted to semiconductor wafer, and output optical fibre 19 is for exporting the light through semiconductor wafer to photodetector 40.
Two, sensor-based system
1, overall
As Fig. 2, this device is a kind of temperature sensing device based on this communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, comprises sensing unit, light source, power control unit, photodetector, subsequent process circuit and microprocessor;
The output terminal of light source is connected with the input end of sensing unit; The output terminal of sensing unit is connected with photodetector;
Photodetector, subsequent process circuit and microprocessor are connected successively;
Its principle of work is:
Light source 20 sends luminous power i 0light, be positioned at the emergent light power of the semiconductor wafer 16 of C-band through absorption edge in sensing unit
Figure 592371DEST_PATH_IMAGE002
Figure 448332DEST_PATH_IMAGE003
, wherein α is absorption coefficient.Emergent light arrives the luminous power of photodetector 40 through Optical Fiber Transmission
Figure 286975DEST_PATH_IMAGE004
Figure 177570DEST_PATH_IMAGE002
Figure 443467DEST_PATH_IMAGE003
.Calculate the value of α through subsequent process circuit 50 and microprocessor 60, then can obtain by the absorption coefficient of semiconductor wafer 16 and the relation of temperature that absorption edge is positioned at C-band the temperature value of measuring;
2, functional block
(1) sensing unit
Sensing unit is communication C waveband semiconductor absorption type optical fiber temperature sensitive unit of the present invention;
(2) light source
Light source is a kind of broad band laser light source, and it is 1500nm that the present invention selects peak wavelength, the SLED semiconductor laser that FWHM is 26nm.In light source, have built in light electric explorer, built in light electric explorer is a kind of Universal photoelectric diode, completes the conversion of light signal to electric signal, and electric output pin is provided;
(3) power control unit
Power control unit is a kind of luminous power feedback control circuit, controls in real time the size of Injection Current according to the fluctuation of monitored light source light power, to guarantee the stable of light source output power;
Power control unit is placed on the control panel of light source;
Its principle of work is: in the time that wideband light source causes Output optical power variation due to factors such as temperature, first via the built in light electric explorer opto-electronic conversion in wideband light source, again via analog to digital converter (A/D) analog to digital conversion, identified by single-chip microcomputer afterwards, and by digital to analog converter (D/A) digital-to-analog conversion, the supply electric current of controlling wideband light source keeps the stable of Output optical power;
1) analog to digital converter (A/D)
Analog to digital converter (A/D) is a kind of general-purpose device that simulating signal is converted to digital signal; Be converted to for the electric signal that opto-electronic conversion is come the digital signal that single-chip microcomputer needs, for single-chip microcomputer processing;
Select the AD7708 chip of ADI company of the U.S.;
2) single-chip microcomputer
Single-chip microcomputer 2 is a kind of general programmable central processing units; Realize judgement and control to wideband laser power variation;
Select ARM7 series 440DX chip;
3) digital to analog converter (D/A)
Digital to analog converter (D/A) the 33rd, a kind of general-purpose device that digital signal is converted to simulating signal; For the output control command of single-chip microcomputer 33 being converted to the simulating signal of controlling laser instrument 20;
Select the AD5663 chip of ADI company of the U.S.;
(4) photodetector
Select conventional photoelectric commutator, the present invention selects coaxial tail fiber type PIN photodiode;
(5) subsequent process circuit
Subsequent process circuit is that one comprises amplification, filtering and analog-to-digital circuit,
Its principle of work is: when varying with temperature by the light signal of sensing unit while changing, first carry out opto-electronic conversion via photodetector and after the conditioning of preposition amplification and filtering circuit, then be converted to digital signal via analog to digital converter (A/D) and offer microprocessor and carry out computing;
(6) microprocessor
Microprocessor, the present invention selects S3C44B0 using ARM7TDMI as kernel as microprocessor.Microprocessor final calculation result is tested temperature signal, offers central control unit and judges, operates and provide peripheral hardware to show.

Claims (2)

1. communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, it is characterized in that including the semiconductor wafer (16) that and D shape metal sleeve (13), input optical fibre (11), output optical fibre (19) and absorption edge screw-threaded coupling spacing with ledge structure are positioned at C-band, it is the monocrystalline InGa that carries out twin polishing processing that described absorption edge is positioned at the semiconductor wafer of C-band (16) 0. 3936as 0. 8453p wafer, its absorption edge is positioned at 1500nm wave band, the two ends of D type metal sleeve (13) and input end locking sleeve (12), output terminal locking sleeve (18) is threaded, fixing by input optical fibre (11) in described D type metal sleeve (13), absorption edge is positioned at the semiconductor wafer (16) of C-band and the optical channel that output optical fibre (19) front and back connect to form successively, described input optical fibre (11) and output optical fibre (19) are respectively through input end locking sleeve (12) and output terminal locking sleeve (18), axle centered by optical channel, from inside to outside, also parcel is provided with input end ceramic core (15) successively, output terminal ceramic core (17) and collimation sleeve pipe (14), input end ceramic insertion core (15), output terminal ceramic insertion core (17) respectively with collimation sleeve pipe (14) wringing fit, and be connected with D shape metal sleeve with output terminal locking sleeve (18) by input end locking sleeve (12).
2. semiconductor absorption-type fiber temperature sensing system, is characterized in that including communication C waveband semiconductor absorption type optical fiber temperature sensitive unit claimed in claim 1, light source, power control unit, photodetector, subsequent process circuit and microprocessor; The output terminal of described light source is connected with the input optical fibre of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit, and power control unit is connected with light source, and the output optical fibre of communication C waveband semiconductor absorption type optical fiber temperature sensitive unit is connected with photodetector; Photodetector, subsequent process circuit and microprocessor are connected successively.
CN201110372987.6A 2011-11-22 2011-11-22 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system Expired - Fee Related CN102435349B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110372987.6A CN102435349B (en) 2011-11-22 2011-11-22 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110372987.6A CN102435349B (en) 2011-11-22 2011-11-22 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system

Publications (2)

Publication Number Publication Date
CN102435349A CN102435349A (en) 2012-05-02
CN102435349B true CN102435349B (en) 2014-07-02

Family

ID=45983533

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110372987.6A Expired - Fee Related CN102435349B (en) 2011-11-22 2011-11-22 Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system

Country Status (1)

Country Link
CN (1) CN102435349B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015201340A1 (en) * 2015-01-27 2016-07-28 Siemens Aktiengesellschaft Fiber optic vibration sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201532266U (en) * 2009-08-07 2010-07-21 武汉神州光电检测设备有限公司 Non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and sensing device thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876785B1 (en) * 1999-06-30 2005-04-05 The Board Of Trustees Of The Leland Stanford Junior University Embedded sensor, method for producing, and temperature/strain fiber optic sensing system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201532266U (en) * 2009-08-07 2010-07-21 武汉神州光电检测设备有限公司 Non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and sensing device thereof

Also Published As

Publication number Publication date
CN102435349A (en) 2012-05-02

Similar Documents

Publication Publication Date Title
CN103364107B (en) Optical fiber Raman cable temperature monitoring and alarm system with attenuation self-compensation
CN109029769A (en) High-precision temperature demodulation method based on distributed fiber Raman sensing technology
CN102322894B (en) Allfiber type long period fiber grating solution multi-parameter sensing system
US8449178B2 (en) Optical fiber temperature sensor
CN101900611A (en) Device and method for simultaneously measuring temperature and stress by using distributed optical fiber sensor
CN101949743B (en) Novel Brillouin time domain analyzer
CN101290248B (en) Single-mode infra-red wavemeter based on Mach-Zehnder Interferometer filtering principle
CN102829952B (en) Semiconductor laser calibrating and testing method and application thereof
CN101799334A (en) Silicon-based optical wave guide temperature sensor based on Mach-Zehnder structure
CN102494874B (en) Tunable laser type fiber Bragg grating wavelength demodulation device
Njegovec et al. Interrogation of FBGs and FBGs arrays using standard telecom DFB diode
CN201532266U (en) Non-metallic ceramic-packaged semiconductor absorption type optical fiber temperature sensing unit and sensing device thereof
CN101936786A (en) Reflection interference type optical fiber temperature probe of semiconductor monolayer film and sensing device thereof
CN105092085A (en) Single-mode core-dislocated fiber temperature measurement method based on dual-coupling structure having correction function
CN102435349B (en) Communication C waveband semiconductor absorption type optical fiber temperature sensitive unit and sensing system
CN103344265B (en) A kind of fiber Bragg grating (FBG) demodulator
CN201373781Y (en) Semiconductor absorption optical fiber temperature detection device
CN106850065B (en) Microwave photon temperature sensing system
CN106840452B (en) Temperature measurement method of microwave photon temperature sensing system
CN1183561A (en) Integral compensation fibre-optic current sensor
CN201716126U (en) Semiconductor single thin film reflection interference type optical fiber temperature probe and sensing device thereof
CN202255625U (en) Spectrometer based on fiber grating time domain reflection technology
CN101598608B (en) Semiconductor reflection-type optical fiber temperature sensor and sensing device thereof
CN203259269U (en) Florescent plastic optical fiber temperature sensing system
CN107402118B (en) A kind of measuring system of rare-earth doped optical fibre refractive index

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140702

Termination date: 20201122