CN101598608B - Semiconductor reflection-type optical fiber temperature sensor and sensing device thereof - Google Patents
Semiconductor reflection-type optical fiber temperature sensor and sensing device thereof Download PDFInfo
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- CN101598608B CN101598608B CN2009100628791A CN200910062879A CN101598608B CN 101598608 B CN101598608 B CN 101598608B CN 2009100628791 A CN2009100628791 A CN 2009100628791A CN 200910062879 A CN200910062879 A CN 200910062879A CN 101598608 B CN101598608 B CN 101598608B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000013307 optical fiber Substances 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 238000012805 post-processing Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
The invention discloses a semiconductor reflection-type optical fiber temperature sensor and a sensing device thereof, belonging to the technical field of temperature sensing. The sensor adopts the structure that: a fixed sleeve pipe (11) is arranged in a protection sleeve pipe (12), and a transfer optical fiber (16) and a collimated sleeve pipe (15) are in head-end connection on the head end of the fixed sleeve pipe (11); and the collimated sleeve pipe (15), a semiconductor chip (14) and a top tightening plug-in unit (13) are sequentially connected with the end of the fixed sleeve pipe (11). The device has the structure: the output end of a light source (30) is connected with the input end of a shunt (20); the output end of the shunt (20) is respectively connected with a sensor (10) and a PIN optoelectronic diode (40); and the PIN optoelectronic diode (40), a post-processing circuit (50) and a microprocessor (60) are sequentially connected. The invention has the advantages of more simple structure, smaller sensor, much more convenient installation, wider scope of application, lower cost and no special requirement on wavelength of a light source; and the system is easy to compensate, and the resolution ratio of temperature detection is high.
Description
Technical field
The present invention relates to the temperature sensor technology field, relate in particular to a kind of semiconductor reflection-type optical fiber temperature sensor and sensing device thereof.
Background technology
From most improvement and designs to semiconductor absorption-type fibre optic temperature sensor in the past, nearly all scheme has all adopted the similar structures of GaAs sensitive material, 850nm light source and multimode optical fiber.Mainly there is the problem of two aspects in this structure:
1, principle aspect
In order to obtain big linear temperature-measuring range, just need select the wideer light source of spectrum for use, very difficult at the 850nm wave band.Simultaneously, along with the rising of temperature, the spectral-transmission favtor of GaAs reduces gradually.Amplitude of variation in the high-temperature part transmissivity diminishes, and sensitivity descends rapidly.Therefore, the expansion of the temperature-measuring range of sensor conflicts mutually with the raising of sensitivity, makes that at last the measuring accuracy in certain temperature-measuring range is not high.
2, process structure aspect
Transmission-type absorption-type sensor/sensor two ends all are connected to optical fiber, cause being not easy in small space settling.But owing to the needs of transmission-type absorption-type measuring principle, the structure of sensor and volume are difficult to further dwindle and improve again.
Summary of the invention
Purpose of the present invention just is to overcome the shortcoming and defect that prior art exists, and a kind of semiconductor reflection-type optical fiber temperature sensor and sensing device thereof that is not subjected to the operation wavelength restriction is provided.
The object of the present invention is achieved like this:
Under the prerequisite that ensures measurement range and precision, utilize semi-conductive thermo-optic effect, by the reflected optical power I (T) of direct detection light signal after the semiconductor material reflection, calculate dut temperature.
I(T)＝cI
0R
In the formula, I
0Be input optical power, c is a coupling coefficient, and R is the reflection coefficient of semiconductor material.
Through behind the photodetector, pass through amplification, filtering again, after after the A/D conversion, the input microprocessor calculates and the demonstration dut temperature.
One, semiconductor reflection-type optical fiber temperature sensor (abbreviation sensor)
This sensor comprises fixed sleeving, protective casing, holds out against plug-in unit, semiconductor wafer, collimation sleeve pipe and conduction optical fiber;
Be provided with fixed sleeving in protective casing, at the head end of fixed sleeving, conduction optical fiber is connected with collimation sleeve pipe front and back; Collimation sleeve pipe, semiconductor wafer, the tail end that holds out against plug-in unit and fixed sleeving are connected successively.
Two, semiconductor reflection-type optical fiber temperature sensing device (abbreviation sensing device)
This device is a kind of temperature sensing device based on this sensor, comprises sensor, shunt, light source, PIN photodiode, subsequent process circuit and microprocessor;
The output terminal of light source is connected with the input end of shunt; The output terminal of shunt is connected with PIN photodiode with sensor respectively;
PIN photodiode, subsequent process circuit and microprocessor are connected successively.
Compare with semiconductor absorption-type fibre optic temperature sensor, the present invention has following advantage and good effect:
1, structure is simpler, the littler more convenient installation of sensor, and the scope of application is wider;
2, cost is cheaper, and optical source wavelength is not had specific (special) requirements
3, system is easy to compensation, thermometric resolution height.
Description of drawings
Fig. 1 is the structural representation of semiconductor reflection-type optical fiber temperature sensor;
Fig. 2 is the block diagram of semiconductor reflection-type optical fiber temperature sensing device.
Wherein:
The 10-sensor,
The 11-fixed sleeving, the 12-protective casing, 13-holds out against plug-in unit,
The 14-semiconductor wafer, 15-collimates sleeve pipe, and 16-conducts optical fiber;
The 20-shunt;
The 30-light source;
The 40-PIN photodiode.
The 50-subsequent process circuit;
The 60-microprocessor.
Embodiment
Describe in detail below in conjunction with drawings and Examples:
One, sensor
1, overall
As Fig. 1, this sensor 10 comprises fixed sleeving 11, protective casing 12, holds out against plug-in unit 13, semiconductor wafer 14, collimation sleeve pipe 15 and conduction optical fiber 16;
Be provided with fixed sleeving 11 in protective casing 12, at the head end of fixed sleeving 11, conduction optical fiber 16 is connected with collimation sleeve pipe 15 front and back; Collimation sleeve pipe 15, semiconductor wafer 14, the tail end that holds out against plug-in unit 13 and fixed sleeving 11 are connected successively.
Its principle of work is:
Because thermo-optic effect, the refractive index of semiconductor material can change along with variation of temperature, shows certain correlativity.According to fresnel formula, material is to the refractive index decision of reflection of incident light coefficient by plane of incidence both sides material.And the refractive index of air can be regarded constant as.Therefore,, can extrapolate the refractive index variable quantity of semiconductor wafer,, calculate variation of temperature, thereby reach the purpose of measuring temperature again by thermo-optic effect by measuring the converted quantity of catoptrical power.
2, functional block
1, fixed sleeving 11
Fixed sleeving 11 is a kind of insulation (plastics) long tubes; Its function is collimation sleeve pipe 15, the semiconductor wafer 14 of fixing internal and holds out against plug-in unit 13.
2, protective casing 12
3, hold out against plug-in unit 13
Holding out against plug-in unit 13 is a kind of metal coil springs: its function is to tighten up semiconductor wafer 14, prevents because mechanical effect causes the variation of reflected optical power.
4, semiconductor wafer 14
The selection of semiconductor sensitive material: reflectivity and temperature have correlativity preferably, and simultaneously, rate of change is big as far as possible.This just requires: the refractive index-temperature coefficient of material (be the characterisitic parameter that the semiconductor material refractive index changes with temperature, also be called thermo-optical coeffecient) is big, and linear.
5, collimation sleeve pipe 15
6, conduction optical fiber 16
Conduction optical fiber 16 is a kind of parts commonly used; Its function is the light conduction.
Two, device
1, overall
As Fig. 2, this device is a kind of temperature sensing device based on this sensor, comprises sensor 10, shunt 20, light source 30, PIN photodiode 40, subsequent process circuit 50 and microprocessor 60;
The output terminal of light source 30 is connected with the input end of shunt 20; The output terminal of shunt 20 is connected with PIN photodiode 40 with sensor 10 respectively;
Its principle of work is:
It is I that light source 30 sends luminous power
0Light, behind shunt 20, arrive the incident optical power I of semiconductor wafer 14 in the sensor 10
1=CI
0, wherein C is the beam split coefficient.Incident light arrives shunt 20 once more after semiconductor wafer 14 reflections, arrived the luminous power I of PIN photodiode 40 by following road light path
2=CRI
1=RC
2I
0, wherein R is the reflection coefficient of semiconductor wafer 14.Calculate the value of R through subsequent process circuit 50 and microprocessor 60, obtain the value of n again by the relation of the refractive index n of R and semiconductor wafer 14.Relation by refractive index in the thermo-optic effect and temperature can obtain temperature value measured.
2, functional block
1, sensor 10
2, shunt 20
3, light source 30
4, PIN photodiode 40
5, subsequent process circuit 50
6, microprocessor 60;
Claims (6)
1. semiconductor reflection-type optical fiber temperature sensor is characterized in that:
This sensor (10) comprises fixed sleeving (11), protective casing (12), holds out against plug-in unit (13), semiconductor wafer (14), collimation sleeve pipe (15) and conduct optical fiber (16);
In protective casing (12), be provided with fixed sleeving (11), the head end in fixed sleeving (11), conduction optical fiber (16) is connected with collimation sleeve pipe (15) front and back; Collimation sleeve pipe (15), semiconductor wafer (14), the tail end that holds out against plug-in unit (13) and fixed sleeving (11) are connected successively.
2. by the described sensor of claim 1, it is characterized in that:
Described fixed sleeving (11) is a kind of insulation long tube.
3. by the described sensor of claim 1, it is characterized in that:
Described protective casing (12) is a kind of insulation long tube, the head end opening, and tail end has the end.
4. by the described sensor of claim 1, it is characterized in that:
Holding out against plug-in unit (13) is a kind of metal coil spring.
5. by the described sensor of claim 1, it is characterized in that:
Semiconductor wafer (14) is that its refractive index with certain thermo-optical coeffecient of a kind of single-sided polishing varies with temperature and the temperature-sensitive material that changes.
6. semiconductor reflection-type optical fiber temperature sensing device based on the described sensor of claim 1 is characterized in that:
Comprise sensor (10), shunt (20), light source (30), PIN photodiode (40), subsequent process circuit (50) and microprocessor (60);
The output terminal of light source (30) is connected with the input end of shunt (20); The output terminal of shunt (20) is connected with PIN photodiode (40) with sensor (10) respectively;
PIN photodiode (40), subsequent process circuit (50) and microprocessor (60) are connected successively;
Described subsequent process circuit (50) is a kind of amplification, filtering and analog-to-digital circuit of comprising commonly used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100628791A CN101598608B (en) | 2009-06-26 | 2009-06-26 | Semiconductor reflection-type optical fiber temperature sensor and sensing device thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100628791A CN101598608B (en) | 2009-06-26 | 2009-06-26 | Semiconductor reflection-type optical fiber temperature sensor and sensing device thereof |
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| Publication Number | Publication Date |
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| CN101598608A CN101598608A (en) | 2009-12-09 |
| CN101598608B true CN101598608B (en) | 2011-12-28 |
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| CN102235919A (en) * | 2010-04-23 | 2011-11-09 | 上海华魏光纤传感技术有限公司 | Semiconductor reflection type optical fiber temperature sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1687725A (en) * | 2005-06-08 | 2005-10-26 | 北京航空航天大学 | Temperature sensor of polarization-preserving fiber in reflection type |
| CN2879148Y (en) * | 2006-02-15 | 2007-03-14 | 保定市五星光纤传感技术有限公司 | Reflected light intensity modulating type temperature sensor |
| CN1945246A (en) * | 2006-10-20 | 2007-04-11 | 中山大学 | Thin film type optical fiber temperature sensor and its temperature sensing method |
| CN201508254U (en) * | 2009-06-26 | 2010-06-16 | 武汉光子科技有限公司 | Semiconductor reflecting type optical fiber temperature sensor and sensing device thereof |
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- 2009-06-26 CN CN2009100628791A patent/CN101598608B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1687725A (en) * | 2005-06-08 | 2005-10-26 | 北京航空航天大学 | Temperature sensor of polarization-preserving fiber in reflection type |
| CN2879148Y (en) * | 2006-02-15 | 2007-03-14 | 保定市五星光纤传感技术有限公司 | Reflected light intensity modulating type temperature sensor |
| CN1945246A (en) * | 2006-10-20 | 2007-04-11 | 中山大学 | Thin film type optical fiber temperature sensor and its temperature sensing method |
| CN201508254U (en) * | 2009-06-26 | 2010-06-16 | 武汉光子科技有限公司 | Semiconductor reflecting type optical fiber temperature sensor and sensing device thereof |
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