CN201490177U - Metal-based copper clad laminate for mounting semiconductor power devices - Google Patents
Metal-based copper clad laminate for mounting semiconductor power devices Download PDFInfo
- Publication number
- CN201490177U CN201490177U CN 200920135712 CN200920135712U CN201490177U CN 201490177 U CN201490177 U CN 201490177U CN 200920135712 CN200920135712 CN 200920135712 CN 200920135712 U CN200920135712 U CN 200920135712U CN 201490177 U CN201490177 U CN 201490177U
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- metal substrate
- copper
- semiconductor power
- clad plate
- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The utility model relates to a metal-based copper clad laminate for mounting semiconductor power devices, which comprises a metal substrate and a conducting layer, and further comprises a heat-conducting insulated rubber layer which is arranged between the metal substrate and the conducting layer and integrates the metal substrate with the conducting layer by the respective connection with both. The metal-based copper clad laminate for mounting semiconductor power devices according to the utility model has the following advantages: as the adopted heat-conducting insulated rubber layer, though lower in cost, has excellent heat conductivity and light-reflecting or light-absorbing property, the metal-based copper clad laminate can not only meet the requirements of the power devices of electronic devices and components, but can also meet the requirements of semiconductor display devices and achieve lower cost; furthermore, due to the adequate thickness formed by multiple coatings, a plurality of types of thicknesses can be formed to widen the application range of the metal-based copper clad laminate, and the flexible configuration thereof lowers the investment on production equipment and further lowers the production cost.
Description
Technical field
The utility model relates to circuit board, more particularly, relates to a kind of Metal Substrate copper-clad plate that is used to install semiconductor power device.
Background technology
Development of electronic technology makes electronic product fast to small-sized, portable, moving direction development, thereby make that the power density of carrying is also increasing on its unit are on the carrier circuit plate of electronic devices and components, and, most electronic products all can only adopt the mode of natural cooling, particularly in mobile or portable product, therefore, the heat-sinking capability of circuit board, promptly fast be dispersed into ability in the surrounding air particular importance that just becomes, especially when using the bigger power device of heating by the heat that itself electronic devices and components is produced because of work.If the heat that produces during the work of these components and parts can not in time distribute, not only can bring job insecurity, parameter changes and waits problem greatly, also the component aging phenomenon can occur, makes the lifetime of electronic product.Therefore, the heat radiation of circuit board becomes extremely important in these cases.Prior art often adopts the ceramic base circuit board to solve heat dissipation problem, though also can address the above problem comparatively perfectly, its cost is higher, has hindered its large-scale application.In addition, also there is the metal substrate of use to add that the circuit board of insulating barrier solves heat dissipation problem, but, can not solves above-mentioned heat dissipation problem preferably because its insulating barrier thermal conductivity that adopts is relatively poor; Its production cost is also higher simultaneously.
The utility model content
The technical problems to be solved in the utility model is, at the defective that above-mentioned heat conductivility is relatively poor, cost is higher of prior art, provides a kind of good heat conductivity, reflective function is good, semiconductor power device is installed in low being used to of cost Metal Substrate copper-clad plate.
The technical scheme that its technical problem that solves the utility model adopts is: construct a kind of Metal Substrate copper-clad plate that is used to install semiconductor power device, comprise metal substrate and conductive layer, also comprise being arranged between described metal substrate and the described conductive layer, connecting the heat conductive insulating glue-line that described metal substrate and described conductive layer become one it respectively.
In Metal Substrate copper-clad plate described in the utility model, described heat conductive insulating glue-line comprises resin and modified filler, and described modified filler comprises the aluminium nitride with high thermoconductivity, aluminium oxide or silicon nitride ceramic particles, and its particle size comprises 0.1--50 μ m.
In Metal Substrate copper-clad plate described in the utility model, described modified filler also comprises the titanium oxide with light reflex or has the copper sulfide particle of absorption effects that described particle size comprises 0.1--50 μ m.
In metal-base circuit described in the utility model, described insulation glue-line comprises the insulating cement sublayer that repeatedly is coated in respectively on the insulating cement that applies described metal substrate or last time, described insulating cement sublayer thickness comprises 5--50 μ m, and described insulating cement layer thickness comprises 30--250 μ m.
In Metal Substrate copper-clad plate described in the utility model, described metal substrate comprises copper, aluminium or alloy material, and described metallic substrate surfaces comprises adhesion layer or the oxide layer that obtains by wire drawing, spraying or anodized.
In Metal Substrate copper-clad plate described in the utility model, described metal substrate thickness comprises 0.1-5mm; Described adhesion layer or thickness of oxide layer comprise 1--5 μ m.
In Metal Substrate copper-clad plate described in the utility model, described insulation glue-line is bonded on the adhesion layer or oxide layer of described metal substrate.
In Metal Substrate copper-clad plate described in the utility model, described conductive layer is connected by pressing with described insulation glue-line.
In Metal Substrate copper-clad plate described in the utility model, the coating that described conductive layer comprises Copper Foil and is positioned at described copper foil surface, its thickness comprise 12--250 μ m; Described coating comprises nickel coating, tin coating or Gold plated Layer.
Implement the Metal Substrate copper-clad plate that is used for the installation power semiconductor device of the present utility model, has following beneficial effect: because the cost of the insulation glue-line that adopts is lower, thermal conductivity is better, and have reflective or photo absorption performance, so this Metal Substrate copper-clad plate not only can be satisfied the requirement of installation power device, and cost is lower; In addition, form enough thickness owing to adopting repeatedly to apply, can form multiple thickness, enlarged its scope of application, it disposes the investment that has reduced on production equipment flexibly, has further reduced production cost.
Description of drawings
Fig. 1 is the cross-sectional view that the utility model is used for the Metal Substrate copper-clad plate embodiment of installation power semiconductor device;
Fig. 2 is a heat conductive insulating glue-line structural representation among the described embodiment.
Embodiment
Below in conjunction with accompanying drawing the utility model embodiment is described further.
As shown in Figure 1, the Metal Substrate copper-clad plate embodiment that is used for the installation power semiconductor device at the utility model, this Metal Substrate copper-clad plate comprises the oxide layer 11 that metal substrate body 1, this metal substrate body 1 obtain by the anode oxidation processing, said metal substrates body 1 and oxide layer 11 common formation metal substrates; On said metal substrates, it is the heat conductive insulating glue-line, in the present embodiment, it is three sublayers that the heat conductive insulating glue-line is divided into, it is respectively first sublayer 21, second sublayer 22 and the 3rd sublayer 23, three sublayers are by repeatedly applying on the oxide layer 11 that is bonded in said metal substrates, so, first sublayer 21 contacts with above-mentioned oxide layer 11, first sublayer 21 is arranged in the below of three sublayers of Fig. 1, second sublayer 22 is on above-mentioned first sublayer 21, and the 3rd sublayer 23 is arranged in the top of three sublayers of Fig. 1 on above-mentioned second sublayer 22, in the present embodiment, the heat conductive insulating glue-line of being made up of above-mentioned three sublayers obtains by three coatings, in other embodiments, also can have different heat conductive insulating glue-lines to apply number of times, thereby obtain different sublayer numbers, for example two-layer or four layers, this need be determined on a case-by-case basis, and mainly is to decide on the thickness of needed heat conductive insulating glue-line and the characteristic of insulating cement itself.In the present embodiment, the thickness of above-mentioned first sublayer 21, second sublayer 22 and the 3rd sublayer 23 is respectively 12 μ m, 20 μ m, and 20 μ m, therefore, the thickness of heat conductive insulating glue-line is 52 μ m in the present embodiment; In addition, in the present embodiment, metal substrate is better and the comparatively cheap aluminium of thermal conduction characteristic, its thickness is 1mm, in its surface, the oxide layer 11 by early stage, anodic oxidation formed is arranged, this thickness of oxide layer is 0.05mm, certainly in other embodiments, said metal substrates also can be copper coin or alloy sheets, and oxide layer 11 also can be spraying and the adhesion layer that obtains.On above-mentioned the 3rd sublayer 23, also comprise conductor layer, this conductor layer comprises Copper Foil 31 and the coating 32 that is positioned on the above-mentioned Copper Foil 31, wherein the surface that contacts with the thermal conductive insulation glue glue-line of Copper Foil 31 is through roughening treatment, be connected on above-mentioned the 3rd sublayer 23 (being the heat conductive insulating glue-line) by pressing, and coating 32 passes through to electroplate attached on the above-mentioned Copper Foil 31, coating 32 is Gold plated Layer in the present embodiment, in other embodiments, also can be zinc-plated or nickel coating.
In the present embodiment, the heat conductive insulating glue-line is very important, power semiconductor, particularly power ledly the time can produce bigger heat in work, if and these heats can not distribute and will cause light-emitting diode aging rapidly, this is the reason that adopts the Metal Substrate copper-clad plate, but, if the heat-conductive characteristic of the insulation glue-line between conductive layer and substrate is bad, can cause not reaching the purpose of using the Metal Substrate copper-clad plate, in order to make the heat conductive insulating glue-line have higher pyroconductivity, in the present embodiment, also add the modified filler aluminum nitride particle 51 (as shown in Figure 2) that improves its pyroconductivity in above-mentioned heat conductive insulating glue-line except that resin material, these aluminum nitride particles 51 are evenly distributed in the above-mentioned insulation glue-line, and its particle size is 1--2 μ m.In other embodiments, can be silicon nitride or alumina particle also, no matter use above-mentioned any or several particle, its particle size also can be within 0.5-50 μ m value.
Because in the present embodiment, this Metal Substrate copper-clad plate is used to place power led, so its reflective is also extremely important, and common insulation glue-line, particularly resin is not reflective even printing opacity.And when this circuit board is used to place light-emitting diode,, need to improve the reflecting rate of this Metal Substrate copper-clad plate in order to improve the axial luminous intensity of light-emitting diode.For achieving the above object, in above-mentioned insulation glue-line, increased reflectorized material in the present embodiment with reverberation function, particularly, be exactly in above-mentioned insulation glue-line, to add titan oxide particles 52 (as shown in Figure 2), equally, titan oxide particles 52 also is evenly distributed in the above-mentioned insulation glue-line, and its particle size is 2--5 μ m.Like this, titan oxide particles 52 emissions that the light that major part enters this insulation glue-line just can be in the insulation glue-line are gone back, thereby make the brightness that is placed on the light-emitting diode on this circuit board increase.In other embodiments, absorb the light of PCB surface if desired, also can in above-mentioned modified filler, add copper sulfide particle with absorption effects, its particle size can be between 0.1--50 μ m value, also be to get 2-5 μ m usually.
The above embodiment has only expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (7)
1. Metal Substrate copper-clad plate that is used to install semiconductor power device, it is characterized in that, comprise metal substrate and conductive layer, also comprise being arranged between described metal substrate and the described conductive layer, connecting the heat conductive insulating glue-line that described metal substrate and described conductive layer become one it respectively.
2. the Metal Substrate copper-clad plate that is used to install semiconductor power device according to claim 1, it is characterized in that, described heat conductive insulating glue-line comprises the thermal conductive insulation glue sublayer that repeatedly is coated in respectively on the thermal conductive insulation glue that applies described metal substrate or last time, described thermal conductive insulation glue sublayer thickness comprises 5--50 μ m, and described heat conductive insulating bondline thickness comprises 30--250 μ m.
3. the Metal Substrate copper-clad plate that is used to install semiconductor power device according to claim 2, it is characterized in that, described metal substrate comprises copper, aluminium or alloy material, and described metallic substrate surfaces comprises adhesion layer or the oxide layer that obtains by wire drawing, spraying or anodized.
4. the Metal Substrate copper-clad plate that is used to install semiconductor power device according to claim 3 is characterized in that described metal substrate thickness comprises 0.1-5mm; Described adhesion layer or thickness of oxide layer comprise 1--5 μ m.
5. the Metal Substrate copper-clad plate that is used to install semiconductor power device according to claim 4 is characterized in that described heat conductive insulating glue-line is bonded on the adhesion layer or oxide layer of described metal substrate.
6. the Metal Substrate copper-clad plate that is used to install semiconductor power device according to claim 5 is characterized in that, described conductive layer is connected by pressing with described heat conductive insulating glue-line.
7. the Metal Substrate copper-clad plate that is used to install semiconductor power device according to claim 6 is characterized in that the coating that described conductive layer comprises Copper Foil and is positioned at described copper foil surface, its thickness comprise 12--250 μ m; Described coating comprises nickel coating, tin coating or Gold plated Layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920135712 CN201490177U (en) | 2009-03-13 | 2009-03-13 | Metal-based copper clad laminate for mounting semiconductor power devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920135712 CN201490177U (en) | 2009-03-13 | 2009-03-13 | Metal-based copper clad laminate for mounting semiconductor power devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201490177U true CN201490177U (en) | 2010-05-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200920135712 Expired - Fee Related CN201490177U (en) | 2009-03-13 | 2009-03-13 | Metal-based copper clad laminate for mounting semiconductor power devices |
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| CN (1) | CN201490177U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738320A (en) * | 2011-12-09 | 2012-10-17 | 安徽莱德光电技术有限公司 | Packaging framework |
| CN103557889A (en) * | 2013-11-14 | 2014-02-05 | 无锡信大气象传感网科技有限公司 | Device for improving response speed of temperature and humidity sensor |
-
2009
- 2009-03-13 CN CN 200920135712 patent/CN201490177U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738320A (en) * | 2011-12-09 | 2012-10-17 | 安徽莱德光电技术有限公司 | Packaging framework |
| CN103557889A (en) * | 2013-11-14 | 2014-02-05 | 无锡信大气象传感网科技有限公司 | Device for improving response speed of temperature and humidity sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiujiang HuaXiang Technology Co., Ltd. Assignor: Shenzhen Huaxiang Circuit Tech. Co., Ltd. Contract record no.: 2014440020070 Denomination of utility model: Metal-based copper clad laminate for mounting semiconductor power devices Granted publication date: 20100526 License type: Exclusive License Record date: 20140310 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20160313 |
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| CF01 | Termination of patent right due to non-payment of annual fee |