CN201430341Y - Passive Q-switched microchip laser - Google Patents
Passive Q-switched microchip laser Download PDFInfo
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- CN201430341Y CN201430341Y CN2009201396960U CN200920139696U CN201430341Y CN 201430341 Y CN201430341 Y CN 201430341Y CN 2009201396960 U CN2009201396960 U CN 2009201396960U CN 200920139696 U CN200920139696 U CN 200920139696U CN 201430341 Y CN201430341 Y CN 201430341Y
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Abstract
The utility model relates to the field of lasers, in particular to a passive Q-switched microchip laser, which comprises a laser gain medium wedge, an absorption medium wedge and an optical cement layer. A vertical end face of the laser gain medium wedge is plated with a laser resonator mirror film layer while a wedged face thereof is plated with an optical cement layer. A vertical end face of theabsorption medium wedge plate is plated with a laser resonator mirror film layer while a wedged face thereof is plated with an optical cement layer. The wedged face of the laser gain medium wedge andthe wedged face of the absorption medium wedge corresponding to the same are bonded by the optical cement layer and form a Brewster angle. The passive Q-switched microchip laser is simple in structure and can regulate peak power and pulse width.
Description
Technical field
The utility model relates to field of lasers, relates in particular to the passive Q-regulaitng laser of microchip structure.
Background technology
Passive Q-adjusted micro-slice laser has many advantages: low-cost, compact conformation, and because the chamber is very short, the therefore pulse that can produce high-peak power, this can obtain high shg efficiency in frequency multiplication.The passive Q-adjusted micro-slice laser of high-peak power can be used on aspects such as laser ranging, laser marking, fluorescence excitation.The shortcoming of passive Q-adjusted micro-slice laser is: in case passive Q-adjusted micro-slice laser structure determines that its pulsewidth and peak power are just definite substantially, do not change with pump power.
The parameter of passive Q-adjusted output, comprise pulsewidth, energy and repetition rate and peak power etc., relevant with the saturable absorption medium in microchip laser chamber, chamber length, gain media, output coupling etc., basic trend is: 1, the ratio of repetition rate direct ratio and pump power and threshold power; 2, pulse energy is relevant with pumping volume and total losses; 3, pulsewidth and chamber grow up to direct ratio, are inversely proportional to absorption loss.
For the accent Q microplate of giving fixed structure, pulsewidth is a constant, and focuses on when constant when pump light, and pulse energy does not change with pumping light power, and therefore, repetition rate is to change the unique parameter that can control by pump power.In order to reach the purpose of control peak power, need more complicated system.
The utility model content
In order to reach the purpose of control peak power, the utility model discloses the passive Q-adjusted micro-slice laser of a kind of simple in structure, scalable peak power and pulsewidth.
The technical solution of the utility model is:
Passive Q-adjusted micro-slice laser of the present utility model comprises:
One gain medium angle of wedge sheet, its vertical end face plating laser mirror rete, angle of wedge face light-plated adhesive film;
One absorbing medium angle of wedge sheet, its vertical end face plating laser mirror rete, angle of wedge face light-plated adhesive film;
One optical cement layer glues together the angle of wedge face of the angle of wedge face of described gain medium angle of wedge sheet and corresponding with it absorbing medium angle of wedge sheet.
Further, the angle of wedge face of the angle of wedge face of described gain medium angle of wedge sheet and absorbing medium angle of wedge sheet is coated with polarizing beam splitting film.
Further, described polarizing beam splitting film is common polarization beam splitting rete or partial polarization beam splitting rete.
Further, the angle of wedge of described gain medium angle of wedge sheet and absorbing medium angle of wedge sheet is Brewster angle.
Further, described gain medium angle of wedge sheet and absorbing medium angle of wedge sheet are the angle of wedge sheet of matrix of the same race.
Further, described gain medium angle of wedge sheet is a Nd:YAG angle of wedge sheet, and described absorbing medium angle of wedge sheet is Cr
4+: YAG angle of wedge sheet or V:YAG angle of wedge sheet.
The utility model adopts as above technical scheme, and the passive Q-adjusted micro-slice laser structure of a kind of simple in structure, scalable peak power and pulsewidth is provided.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Embodiment
Now with embodiment the utility model is further specified in conjunction with the accompanying drawings.
Cardinal principle of the present utility model is to adopt gain medium (as Nd:YAG) angle of wedge sheet to become microplate with saturated absorption medium (as Cr:YAG or V:YAG) angle of wedge sheet by the in-depth optical cement, wherein plate low-refraction or high index of refraction optical cement rete between two angle of wedge sheets, its angle of wedge is the Brewster's angle of the relative rete of material.
Plating low-refraction or high index of refraction optical cement rete between two angles of wedge, the angle of wedge between constitute single monoblock by optical cement or in-depth optical cement, make that the structure of device is compact more, integrated degree is higher.Thereby the angle of wedge vertically surface and intermediate light glued membrane constitutes Brewster's angle and constitutes to the complete transmission of P component, to the part polarizer of the flat sheet type of S component reflection, and it is lossless substantially to P component polarised light, and theoretical transmitance can reach 100%.Therefore the polarization direction of output beam is determined.
By the position of vertical moving pump light with respect to microplate, the thickness of gain media and absorbing medium changes continuously, though therefore optical cavity length is constant, but the optical loss of laser cavity, the uptake of pump light all change, and therefore the output performance of passive Q-adjusted micro-slice laser can be controlled with the relative dislocation of pump spot by adjusting microplate.
Consult the structural representation of the present utility model that is shown in Figure 1.Wherein, 101 for refractive index is the angle of wedge sheet of the gain medium (as Nd:YAG) of n1, and 102 for refractive index is the optical cement film of n2, and 103 is that the saturable absorption medium is (as Cr
4+: angle of wedge sheet YAG), with gain medium angle of wedge sheet 101 matrix of the same race, refractive index is identical with gain medium angle of wedge sheet 101.Incident light 104 contains p component and s component, and 105 is reverberation, is the s component, and 106 is transmitted light, comprises the s component of whole p components and part.θ is the Brewster's angle of material n1 with respect to optical cement film n2, θ=arctan (n2/n1).
Gain medium angle of wedge sheet 101 and absorbing medium angle of wedge sheet 103 become an integral body by optical cement or in-depth optical cement are bonding, and optical cement film selective refraction rate n2 is greater than or less than the material of n1.The general material of n2 greater than n1 of preferably selecting, the θ value of this moment is littler, have more and utilize dwindling of device volume, helps the very narrow situation of pulsewidth.For the p light components, theoretical transmitance by this device is 100%, and the s light components can not see through fully, some is reflected, and incident light arrives the n2 interface by this part polarizer by n1, arrive n1 from n2 again, all satisfy the brewster angle incidence condition, it is bigger that the s polarised light is reflected twice loss, produced just because of this species diversity and partly played inclined to one side effect.The adjusting of peak power then is the position of moving pump light by vertical light vector direction, thereby the optical loss, the uptake of pump light of control laser cavity reach.The hot spot of laser beam can change by the size that changes activation area.
Therefore the structure that the utility model proposes can form the Q laser output that the polarization direction is determined, peak power is adjustable.
Table 1 is a typical structure, provide the absorption coefficient and the length of laser medium concentration and thickness and saturated absorption medium, the chamber length overall is 2.5mm, by mobile pump light choice of location different gain media thickness and saturated absorption dielectric thickness, calculate the output parameter shown in the table 2 through theory: mobile pump light position is described, peak power can be adjusted to KW more than 900 from KW more than 100; Pulsewidth can be adjusted to ps more than 200 from about 1ns.
Table 1 structural parameters
| The Nd doping content | The Cr absorption coefficient | Nd:YAG length | Cr:YAG length | The outgoing mirror coupling efficiency |
| 1％ | 3.0cm -1 | 2.0mm | 0.5mm | 80％ |
| 1％ | 3.0cm -1 | 1.0mm | 1.5mm | 80％ |
| 1％ | 3.0cm -1 | 0.5mm | 2.0mm | 80％ |
Table 2 output parameter
| The output energy | The output peak power | Pulsewidth |
| 94μJ | 112KW | 840ps |
| 186μJ | 636KW | 293ps |
| 212μJ | 936KW | 227ps |
Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; in the spirit and scope of the present utility model that do not break away from appended claims and limited; can make various variations to the utility model in the form and details, be protection range of the present utility model.
Claims (6)
1. a passive Q-adjusted micro-slice laser is characterized in that, comprising:
One gain medium angle of wedge sheet (101), its vertical end face plating laser mirror rete, angle of wedge face light-plated adhesive film;
One absorbing medium angle of wedge sheet (103), its vertical end face plating laser mirror rete, angle of wedge face light-plated adhesive film;
One optical cement layer (102) glues together the angle of wedge face of the angle of wedge face of described gain medium angle of wedge sheet (101) and corresponding with it absorbing medium angle of wedge sheet (103).
2. passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: the angle of wedge face of the angle of wedge face of described gain medium angle of wedge sheet (101) and absorbing medium angle of wedge sheet (103) is coated with polarizing beam splitting film.
3. passive Q-adjusted micro-slice laser according to claim 2 is characterized in that: described polarizing beam splitting film is common polarization beam splitting rete or partial polarization beam splitting rete.
4. passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: the angle of wedge of described gain medium angle of wedge sheet (101) and absorbing medium angle of wedge sheet (103) is Brewster angle.
5. passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: described gain medium angle of wedge sheet (101) and absorbing medium angle of wedge sheet (103) are the angle of wedge sheet of matrix of the same race.
6. passive Q-adjusted micro-slice laser according to claim 5 is characterized in that: described gain medium angle of wedge sheet (101) is a Nd:YAG angle of wedge sheet, and described absorbing medium angle of wedge sheet (103) is Cr
4+: YAG angle of wedge sheet or V:YAG angle of wedge sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201396960U CN201430341Y (en) | 2009-07-24 | 2009-07-24 | Passive Q-switched microchip laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201396960U CN201430341Y (en) | 2009-07-24 | 2009-07-24 | Passive Q-switched microchip laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201430341Y true CN201430341Y (en) | 2010-03-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201396960U Expired - Fee Related CN201430341Y (en) | 2009-07-24 | 2009-07-24 | Passive Q-switched microchip laser |
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| Country | Link |
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| CN (1) | CN201430341Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889834A (en) * | 2021-09-29 | 2022-01-04 | 无锡卓海科技股份有限公司 | Power self-optimization method of solid-state laser |
-
2009
- 2009-07-24 CN CN2009201396960U patent/CN201430341Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889834A (en) * | 2021-09-29 | 2022-01-04 | 无锡卓海科技股份有限公司 | Power self-optimization method of solid-state laser |
| CN113889834B (en) * | 2021-09-29 | 2022-12-09 | 无锡卓海科技股份有限公司 | Power self-optimization method of solid-state laser |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100324 Termination date: 20140724 |
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| EXPY | Termination of patent right or utility model |