CN201381565Y - Colored transparent photoelectric curtain wall glass - Google Patents
Colored transparent photoelectric curtain wall glass Download PDFInfo
- Publication number
- CN201381565Y CN201381565Y CN200920083313U CN200920083313U CN201381565Y CN 201381565 Y CN201381565 Y CN 201381565Y CN 200920083313 U CN200920083313 U CN 200920083313U CN 200920083313 U CN200920083313 U CN 200920083313U CN 201381565 Y CN201381565 Y CN 201381565Y
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- glass
- silicon film
- semiconductor silicon
- transparent photoelectric
- curtain wall
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- Photovoltaic Devices (AREA)
Abstract
The utility model relates to colored transparent photoelectric curtain wall glass which comprises conductive glass, a semiconductor silicon film layer, packaging material and backside glass, wherein the semiconductor silicon film deposits on the conductive glass through the plasma chemical vapour deposition (PECVD) technique to realize the power generation function, the packaging material and the backside glass are then laid on the semiconductor silicon film to form the colored transparent photoelectric curtain wall glass, and the positive pole and the negative pole are led out of the sides through copper-tin bands. The colored transparent photoelectric curtain wall glass has the advantages that the colors are variable, the glass is transparent, the light transmission rate is adjustable, and the glass also has better functions of heat insulation, water, fire, ultraviolet, breakage and falling prevention and power generation; the glass is directly installed on a building, the structure is simple and applicable, the cost is low, and the glass is convenient for the integrated application of the solar energy and the building.
Description
Technical field
The utility model relates to a kind of glass product, particularly a kind of colourful transparent photoelectric glass screen wall.
Background technology
Nineteen twenty-nine, world-class building great master Le Kebuxiai takes the lead in proposing the imagination of large stretch of curtain wall, and as the desirable building types of depicting.The curtain wall broad view, permeability is strong, and the office premises depth is big, and daylighting is had relatively high expectations, and curtain wall phase commute satisfies advantages such as its designing requirement.Obtained extensive use in the past few decades.But because curtain wall caused large-area light pollution to the city, and majority can not open, and ventilation effect is poor, and heat-insulating property is poor, and energy consumption is big, and inferior positions such as the expense height of operation maintenance make its application be subjected to increasing restriction.
Summary of the invention
The utility model is in order to overcome the inferior position that traditional cladding glass light pollution is serious, ventilation effect is poor, energy consumption is big, operating cost is high, and a kind of colourful transparent is provided, light transmittance is adjustable, do not have light pollution, can generate electricity and colourful transparent photoelectric glass screen wall that operating cost is low.This colourful transparent photoelectric glass screen wall plated film and forming on common electro-conductive glass in coating process, is adjusted each layer film thickness and film spacing, and then regulates the light transmittance and the color of glass.In addition, in the following process process, can be according to the demand of client to appearance color and light transmittance, add the transparent color film, through the light modulation several times of back side glass, reach the requirement of adjusting cladding glass color and light transmittance according to the principle of three primary colours, both utilized solar electrical energy generation, do not influence the building natural lighting again, the comprehensive conversion ratio of sunshine is brought up to more than 40%.The utility model is particularly suitable for using in building unit fields such as roofing, skylight, curtain walls.
The technical solution adopted in the utility model is:
Colourful transparent photoelectric glass screen wall, form by electro-conductive glass, semiconductor silicon film layer, encapsulating material and back side glass combination, on electro-conductive glass by plasma activated chemical vapour deposition (PECVD) process deposits semiconductor silicon film to realize electricity generate function, the back is spread encapsulating material and back side glass successively on semiconductive thin film, form colourful transparent photoelectric glass screen wall, and draw positive and negative electrode by copper tin band from the side.
Change the color and the light transmittance of glass in the semiconductor silicon film preparation process by change and spacing, to be fit to the needs of Application in Building.The semiconductor silicon film layer thickness is 235nm-450nm, the gap between the semiconductor silicon film layer: 150um-650um.
Colourful transparent photoelectric glass screen wall is mainly formed by electro-conductive glass, semiconductor silicon film layer, encapsulating material and back side glass combination.Electro-conductive glass is common electro-conductive glass, and back side glass adopts common tempered glass, encapsulating material select for use have multiple color, the building PVB glued membrane of functions such as transparent, sealing, moistureproof, stable, heatproof, uvioresistant.Colourful transparent photoelectric glass screen wall is the doubling structure, has both had color tunable, advantage such as transparent, but heat-insulation and heat-preservation, sound insulation, anti-ultraviolet again, and can generate electricity.Draw positive and negative electrode in the side by copper tin band.This colourful transparent photoelectric glass screen wall uses as constructional materials as common cladding glass is direct.Break fluid sealant between each curtain wall component, closely linking together does not mutually need other sealing device, the quick construction facility.The back electrode of battery adopts the magnetron sputtering transparent conductive film to substitute the opaque aluminium or the silver electrode of traditional vacuum evaporation.
The beneficial effects of the utility model are: colourful transparent photoelectric glass screen wall has effectively remedied the inferior position of light pollution, high energy consumption, high operating cost of conventional curtain wall glass etc., can satisfy the requirement of client to different appearance colors and light transmittance, can play simultaneously function such as better heat-insulation and heat-preservation, sound insulation, anti-ultraviolet, waterproof, fire prevention and generating and need not the mounting system structure, directly use as building glass, simple being suitable for, can with the building perfect the combination, facility quick for installation, with low cost.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is a cross sectional representation of the present utility model, 5-metal conducting layer among the figure, and 6-amorphous silicon membrane, 7-are transparency conducting layer.
Fig. 3 is an extraction electrode schematic diagram of the present utility model.
The specific embodiment
The utility model will be further described in conjunction with the accompanying drawings.
As shown in Figure 1, colourful transparent photoelectric glass screen wall is made up of electro-conductive glass 1, semiconductor silicon film layer 2, encapsulating material 3 and back side glass 4, light transmittance and color can be adjusted in the thickness of semiconductor silicon film 2 and gap, and can generate electricity, semiconductor silicon film 2 upper berth encapsulating materials, 3 colourful transparent PVB glued membranes and back side glass 4 are packaged into colourful transparent photoelectric glass screen wall, and draw positive and negative electrode by copper tin band from the side.As Fig. 2, shown in Figure 3.
Colourful transparent photoelectric glass screen wall is made according to the following steps:
1, electro-conductive glass, back side glass are prepared: blanking, cleaning, oven dry; Back side glass adopts common tempered glass;
2, plated film: deposition p-i-n knot: with cleaned electro-conductive glass 1, put into plasma activated chemical vapour deposition PECVD equipment settling chamber, adjust deposition parameter, at nesa coating 7 is the deposition of carrying out p type amorphous silicon membrane, i type amorphous silicon membrane and n type amorphous silicon membrane on the TCO film successively, if multijunction cell, repeated deposition p, i, n gets final product;
3, the transparent back electrode of sputter: will be through the electro-conductive glass of the 2nd step making, it is indoor to put into magnetron sputtering, adjusts sputtering parameter, and this layer of depositing zinc oxide aluminum transparent electroconductive film is called metal conducting layer 5 on amorphous silicon membrane, and metal conducting layer 5 is as back electrode;
4, extraction electrode:, connect two strip electrode lead-out wires so that electric current is drawn encapsulation with the back from back electrode with being coated with copper tin band with the semiproduct in the 3rd step;
5, combination: semiconductor silicon film 2 upper berth colourful transparent 3PVB glued membranes and back side glass 4 are packaged into colourful transparent photoelectric glass screen wall;
6, encapsulation: the semiproduct that the 5th step finished are drawn positive and negative electrode on special equipment;
7, detect: carry out outward appearance, mechanical performance and electrical property and detect;
8, packing.
The semiconductor silicon film layer thickness is 235nm-450nm, gap between the semiconductor silicon film layer is at 150um-650um, different requirements according to the client, can change the thickness of semiconductor silicon film layer and color and the light transmittance that the spacing between the semiconductor silicon film layer changes glass by the plated film in the 2nd step, to be fit to client's Application in Building needs.
Claims (4)
1, colourful transparent photoelectric glass screen wall, form by electro-conductive glass (1), semiconductor silicon film layer (2), encapsulating material (3) and back side glass (4), it is characterized in that: go up by plasma activated chemical vapour deposition process deposits semiconductor silicon film layer (2) at electro-conductive glass (1), on semiconductor film layer (2), spread encapsulating material (3) and back side glass (4) successively, and draw positive and negative electrode by copper tin band from the side.
2, colourful transparent photoelectric glass screen wall according to claim 1 is characterized in that: the thickness of described semiconductor silicon film layer (2) is: 235nm-450nm.
3, colourful transparent photoelectric glass screen wall according to claim 1 is characterized in that: the gap between the described semiconductor silicon film layer (2): 150um-650um.
4, colourful transparent photoelectric glass screen wall according to claim 1 is characterized in that: described encapsulating material (3) is a colourful transparent PVB glued membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920083313U CN201381565Y (en) | 2009-01-09 | 2009-01-09 | Colored transparent photoelectric curtain wall glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920083313U CN201381565Y (en) | 2009-01-09 | 2009-01-09 | Colored transparent photoelectric curtain wall glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201381565Y true CN201381565Y (en) | 2010-01-13 |
Family
ID=41525040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920083313U Expired - Lifetime CN201381565Y (en) | 2009-01-09 | 2009-01-09 | Colored transparent photoelectric curtain wall glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201381565Y (en) |
-
2009
- 2009-01-09 CN CN200920083313U patent/CN201381565Y/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20100613 Address after: 430074, Hubei, East Lake Wuhan Development Zone, Shandong Road, SBI Road, 6, 16 building Patentee after: Wuhan Rixin Technology Co., Ltd. Address before: 430074, Hubei, East Lake Wuhan Development Zone, Shandong Road, SBI Road, 6, 16 building Patentee before: Wuhan Rixin Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100113 |