CN201374198Y - Flexible nanometer thin-film silicon cell based on radioactive elements - Google Patents
Flexible nanometer thin-film silicon cell based on radioactive elements Download PDFInfo
- Publication number
- CN201374198Y CN201374198Y CN200820216112U CN200820216112U CN201374198Y CN 201374198 Y CN201374198 Y CN 201374198Y CN 200820216112 U CN200820216112 U CN 200820216112U CN 200820216112 U CN200820216112 U CN 200820216112U CN 201374198 Y CN201374198 Y CN 201374198Y
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- film silicon
- nanometer thin
- flexible nanometer
- energy
- flexible
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Abstract
The utility model relates to a silicon cell, in particular to a flexible nanometer thin-film silicon cell based on radioactive elements, which consists of a lead sealing tank, flexible nanometer thin-film silicon and a low-concentration radioactive element rod, wherein the lead sealing tank is in the outermost layer; the low-concentration radioactive element rod is in the innermost layer; the flexible nanometer thin-film silicon is in the middle layer; and the flexible nanometer thin-film silicon has a PN junction and a contact conductor which are respectively connected with an external leading wire of the lead sealing tank. The flexible nanometer thin-film silicon is used for covering on the periphery of the low-concentration radioactive elements. Photons (gamma-rays) released by radioactive elements because of the radioactive decay have high energy and strong penetration capability, the periphery of the radioactive elements can be covered by several layers of flexible nanometer thin-film silicon with the PN junction, and the outermost layer is sealed by the lead tank, so high-energy photons can penetrate through several layers of films, one photon can excite n electron hole pairs, the generated electron hole pairs move in a fixed direction in the batteries with the PN junctions, and the energy of the high-energy photons can be converted into electric energy.
Description
Technical field
The utility model relates to silion cell, refer in particular to a kind of flexible nano thin-film silicon cell, utilize the decay of radioelement, emit high-energy photon (gamma-rays) and excite electron hole pair in the flexible nano thin-film silicon cell based on radioelement, produce charged carriers, and then produce electric current.
Background technology
At present, have many troubles in the processing of many discarded radioelement, what have wants the end, buried ground, and the big cost of will spending that has is refined again, so in this case, the processing of discarding radioelement is the problem of a more thorny and urgent solution.Yet, utilize some radioelement to produce and emit a kind of flexible nano thin-film silicon cell of principle manufacturing that high-energy photon (gamma-rays) excites the electron hole pair in the flexible nano thin-film silicon cell based on radioelement, particularly under the relatively more nervous situation of the present energy, can so that waste recycling turn waste into wealth.Scientist's report according to the U.S. LosAlamos National Laboratory at the beginning of 2006, in the nanometer solar cell, found " multiple exciting " that a photon can excite a plurality of charge carriers (Multi-excitation) phenomenon, the output current of nano-silicon solar cell is increased, and this phenomenon does not observe in other non-nano silica-base film.This is why this patent uses one of reason of nano silicon-based film.
Summary of the invention
The purpose of this utility model is to utilize discarded low concentration radioelement rod to make a kind of flexible nano thin-film silicon cell for raw material, makes waste recycling.
The utility model is made up of lead-tight jar, flexible nano thin-film silicon and low concentration radioelement rod, outermost layer is the lead-tight jar, the innermost layer is a low concentration radioelement rod, the middle layer is a flexible nano thin-film silicon, flexible nano thin-film silicon has PN junction, and having contact conductor, the external lead wire with the lead-tight jar is connected respectively.
The utility model utilizes flexible nano thin-film silicon (have PN junction, have contact conductor simultaneously), is wrapped in the radioelement periphery of low concentration.Because radioelement decay, it is very high to emit photon (gamma-rays) energy, penetrability is very strong, so can wrap up layer by layer with flexible nano thin-film silicon (having PN junction) in the periphery, utilize pig sealing, high-energy photon like this in outermost, can the penetrated bed layer film, reach a photon and can excite n electron hole pair, the electron hole pair of generation is directed moving in having the battery of PN junction, can be the energy conversion of high-energy photon electric energy so just.
Advantage of the present utility model is:
(1) started a kind of utilization of novel energy.
(2) can reasonably handle and utilize discarded radioelement.
Description of drawings
Fig. 1 is based on the flexible nano thin-film silicon cell synoptic diagram of radioelement.
1, lead-tight jar 2, flexible nano thin-film silicon 3, low concentration radioelement rod
Fig. 2 is a flexible nano thin-film silicon, has PN junction, has contact conductor simultaneously, is sleeve-shaped.
Fig. 3 is the lead-tight jar, has and mutually external lead-in wire A ', the B ' of flexible nano thin-film silicon electrode lead-in wire.
Embodiment
Flexible nano thin-film silicon is rolled into as shown in Figure 3 apperance.Then the radioelement rod of the low concentration of Fig. 1 is put into the flexible nano thin-film silicon multilayer sleeve of Fig. 3, at last both are put into the lead-tight jar of Fig. 4, simultaneously contact conductor is connected outward, A ' is connected with the A anode terminal, and B ' is connected with B cathode leg end.
Principle of work of the present utility model is as follows:
Utilize the decay of some discarded radioelement, emit high-energy photon (gamma-rays) and excite electron hole pair in the flexible nano thin-film silicon cell, produce charged carriers, and then produce electric current.
Claims (1)
1, a kind of flexible nano thin-film silicon cell based on radioelement, it is characterized in that, form by lead-tight jar (1), flexible nano thin-film silicon (2) and low concentration radioelement rod (3), outermost layer is lead-tight jar (1), the innermost layer is a low concentration radioelement rod (3), and the middle layer is flexible nano thin-film silicon (2), and flexible nano thin-film silicon (2) has PN junction, and having contact conductor, the external lead wire with lead-tight jar (1) is connected respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200820216112U CN201374198Y (en) | 2008-11-28 | 2008-11-28 | Flexible nanometer thin-film silicon cell based on radioactive elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200820216112U CN201374198Y (en) | 2008-11-28 | 2008-11-28 | Flexible nanometer thin-film silicon cell based on radioactive elements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201374198Y true CN201374198Y (en) | 2009-12-30 |
Family
ID=41500279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200820216112U Expired - Lifetime CN201374198Y (en) | 2008-11-28 | 2008-11-28 | Flexible nanometer thin-film silicon cell based on radioactive elements |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201374198Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419848B (en) * | 2008-12-02 | 2011-06-01 | 江苏大学 | Flexible nano thin-film silicon cell based on radioactive element |
| CN106160628A (en) * | 2015-04-28 | 2016-11-23 | 俞建峰 | Radiation electric energy |
-
2008
- 2008-11-28 CN CN200820216112U patent/CN201374198Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419848B (en) * | 2008-12-02 | 2011-06-01 | 江苏大学 | Flexible nano thin-film silicon cell based on radioactive element |
| CN106160628A (en) * | 2015-04-28 | 2016-11-23 | 俞建峰 | Radiation electric energy |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20091230 Effective date of abandoning: 20081128 |