CN101419848B - Flexible nano thin-film silicon cell based on radioactive element - Google Patents
Flexible nano thin-film silicon cell based on radioactive element Download PDFInfo
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- CN101419848B CN101419848B CN2008102357836A CN200810235783A CN101419848B CN 101419848 B CN101419848 B CN 101419848B CN 2008102357836 A CN2008102357836 A CN 2008102357836A CN 200810235783 A CN200810235783 A CN 200810235783A CN 101419848 B CN101419848 B CN 101419848B
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Abstract
The invention relates to a silicon cell, in particular to a flexible nano-film silicon cell based on radioactive elements; the silicon cell consists of a lead-tight tank, flexible nano-film silicon and the low concentration radioactive elements; the outermost layer is the lead-tight tank, the innermost layer is a low concentration radioactive element bar, and the intermediate layer is the flexible nano-film silicon which has a PN knot and is provided with a contact conductor that is respectively connected with an external connection lead wire of the lead-tight tank. The invention utilizes the flexible nano-film silicon to be wrapped at the periphery of the low concentration radioactive elements. Due to the disintegration of the radioactive elements, the emitted light quantum (gamma ray) has high energy and strong penetrability, and can be wrapped by the flexible nano-film silicon (having the PN knot) layer upon layer at the periphery; the outermost periphery of the light quantum is sealed by using the lead-tight tank, so that the light quantum with high energy can penetrate the film layer upon layer to achieve the aim that one light quantum can excite n electron hole pairs. The generated electron hole pairs can move directionally in the cell having the PN knot, and the energy of the light quantum with high energy is transformed into electrical energy.
Description
Technical field
The present invention relates to silion cell, refer in particular to a kind of flexible nano thin-film silicon cell, utilize the decay of radioelement, emit high-energy photon (gamma-rays) and excite electron hole pair in the flexible nano thin-film silicon cell based on radioelement, produce charged carriers, and then produce electric current.
Background technology
At present, have many troubles in the processing of many discarded radioelement, what have wants the end, buried ground, and the big cost of will spending that has is refined again, so in this case, the processing of discarding radioelement is the problem of a more thorny and urgent solution.Yet, utilize some radioelement to produce and emit a kind of flexible nano thin-film silicon cell of principle manufacturing that high-energy photon (gamma-rays) excites the electron hole pair in the flexible nano thin-film silicon cell based on radioelement, particularly under the relatively more nervous situation of the present energy, can so that waste recycling turn waste into wealth.Scientist's report according to the U.S. LosAlamos National Laboratory at the beginning of 2006, in the nanometer solar cell, found " multiple exciting " that a photon can excite a plurality of charge carriers (Multi-excitation) phenomenon, the output current of nano-silicon solar cell is increased, and this phenomenon does not observe in other non-nano silica-base film.This is why this patent uses one of reason of nano silicon-based film.
Summary of the invention
The objective of the invention is to provide a kind of flexible nano thin-film silicon cell, it is made up of lead-tight jar, flexible nano thin-film silicon and low concentration radioelement rod, outermost layer is the lead-tight jar, the innermost layer is a low concentration radioelement rod, the middle layer is a flexible nano thin-film silicon, flexible nano thin-film silicon has PN junction, and has contact conductor, and the external lead wire with the lead-tight jar is connected respectively.
The present invention utilizes flexible nano thin-film silicon (have PN junction, have contact conductor simultaneously), is wrapped in the radioelement periphery of low concentration.Because radioelement decay, it is very high to emit photon (gamma-rays) energy, penetrability is very strong, so can wrap up layer by layer with flexible nano thin-film silicon (having PN junction) in the periphery, utilize pig sealing, high-energy photon like this in outermost, can the penetrated bed layer film, reach a photon and can excite n electron hole pair, the electron hole pair of generation is directed moving in having the battery of PN junction, can be the energy conversion of high-energy photon electric energy so just.
The invention has the advantages that:
(1) started a kind of utilization of novel energy.
(2) can reasonably handle and utilize discarded radioelement.
Description of drawings
Fig. 1 is based on the flexible nano thin-film silicon cell synoptic diagram of radioelement.
1, lead-tight jar 2, flexible nano thin-film silicon 3, low concentration radioelement rod
Fig. 2 is a flexible nano thin-film silicon, has PN junction, has contact conductor simultaneously, is sleeve-shaped.
Fig. 3 is the lead-tight jar, has and mutually external lead-in wire A ', the B ' of flexible nano thin-film silicon electrode lead-in wire.
Embodiment
Flexible nano thin-film silicon is rolled into as shown in Figure 2 apperance.Then the radioelement rod of the low concentration of Fig. 1 is put into the flexible nano thin-film silicon multilayer sleeve of Fig. 2, at last both are put into the lead-tight jar of Fig. 3, simultaneously contact conductor is connected outward, A ' is connected with the A anode terminal, and B ' is connected with B cathode leg end.
Principle of work of the present invention is as follows:
Utilize the decay of some discarded radioelement, emit high-energy photon (gamma-rays) and excite electron hole pair in the flexible nano thin-film silicon cell, produce charged carriers, and then produce electric current.
Claims (1)
1. flexible nano thin-film silicon cell based on radioelement, it is made up of lead-tight jar (1), flexible nano thin-film silicon (2) and low concentration radioelement rod (3), outermost layer is lead-tight jar (1), the innermost layer is a low concentration radioelement rod (3), the middle layer is flexible nano thin-film silicon (2), flexible nano thin-film silicon (2) has PN junction, and has contact conductor, and the external lead wire with lead-tight jar (1) is connected respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102357836A CN101419848B (en) | 2008-12-02 | 2008-12-02 | Flexible nano thin-film silicon cell based on radioactive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102357836A CN101419848B (en) | 2008-12-02 | 2008-12-02 | Flexible nano thin-film silicon cell based on radioactive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101419848A CN101419848A (en) | 2009-04-29 |
| CN101419848B true CN101419848B (en) | 2011-06-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102357836A Expired - Fee Related CN101419848B (en) | 2008-12-02 | 2008-12-02 | Flexible nano thin-film silicon cell based on radioactive element |
Country Status (1)
| Country | Link |
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| CN (1) | CN101419848B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101908387B (en) * | 2010-07-30 | 2013-01-16 | 武汉恒钰科技有限公司 | Radiation source carbon nanotube battery device |
| CN105869695B (en) * | 2016-04-20 | 2017-12-29 | 中国工程物理研究院材料研究所 | Radioisotope battery based on gaseous state radioactive source |
| CN107103939A (en) * | 2017-04-27 | 2017-08-29 | 深圳贝塔能量技术有限公司 | A kind of flexible radiation volt isotope battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4024420A (en) * | 1975-06-27 | 1977-05-17 | General Electric Company | Deep diode atomic battery |
| US5721462A (en) * | 1993-11-08 | 1998-02-24 | Iowa State University Research Foundation, Inc. | Nuclear battery |
| CN101236796A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Stable non-crystal silicon nucleus battery |
| CN201374198Y (en) * | 2008-11-28 | 2009-12-30 | 江苏大学 | Flexible nanometer thin-film silicon cell based on radioactive elements |
-
2008
- 2008-12-02 CN CN2008102357836A patent/CN101419848B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4024420A (en) * | 1975-06-27 | 1977-05-17 | General Electric Company | Deep diode atomic battery |
| US5721462A (en) * | 1993-11-08 | 1998-02-24 | Iowa State University Research Foundation, Inc. | Nuclear battery |
| CN101236796A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Stable non-crystal silicon nucleus battery |
| CN201374198Y (en) * | 2008-11-28 | 2009-12-30 | 江苏大学 | Flexible nanometer thin-film silicon cell based on radioactive elements |
Non-Patent Citations (1)
| Title |
|---|
| 邹宇等.伏特效应放射性同位素电池的原理和进展.《核技术》.2006,第29卷(第6期), * |
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| Publication number | Publication date |
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| CN101419848A (en) | 2009-04-29 |
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| C14 | Grant of patent or utility model | ||
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| CB03 | Change of inventor or designer information |
Inventor after: Zhu Jun Inventor after: Ding Jianning Inventor after: Lu Zhengxing Inventor after: Zhu Yiyun Inventor after: Cheng Guanggui Inventor after: Tang Ying Inventor before: Zhu Jun Inventor before: Ding Jianning Inventor before: Lu Zhengxing Inventor before: Zhu Yiyun Inventor before: Cheng Guanggui |
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Free format text: CORRECT: INVENTOR; FROM: ZHU JUN DING JIANNING LU ZHENGXING ZHU YIYUN CHENG GUANGGUI TO: ZHU JUN DING JIANNING LU ZHENGXING ZHU YIYUN CHENG GUANGGUI TANG YING |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110601 Termination date: 20111202 |