CN201281644Y - 带空气隔离阀的电离真空计装置 - Google Patents
带空气隔离阀的电离真空计装置 Download PDFInfo
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- CN201281644Y CN201281644Y CNU200820154252XU CN200820154252U CN201281644Y CN 201281644 Y CN201281644 Y CN 201281644Y CN U200820154252X U CNU200820154252X U CN U200820154252XU CN 200820154252 U CN200820154252 U CN 200820154252U CN 201281644 Y CN201281644 Y CN 201281644Y
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- electric vacuum
- air
- valve
- counter device
- ionization vacuum
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CNU200820154252XU CN201281644Y (zh) | 2008-10-21 | 2008-10-21 | 带空气隔离阀的电离真空计装置 |
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CNU200820154252XU CN201281644Y (zh) | 2008-10-21 | 2008-10-21 | 带空气隔离阀的电离真空计装置 |
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CN201281644Y true CN201281644Y (zh) | 2009-07-29 |
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CNU200820154252XU Expired - Lifetime CN201281644Y (zh) | 2008-10-21 | 2008-10-21 | 带空气隔离阀的电离真空计装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101928924A (zh) * | 2010-05-11 | 2010-12-29 | 赫得纳米科技(昆山)有限公司 | 真空溅射镀膜设备 |
CN103993264A (zh) * | 2013-02-19 | 2014-08-20 | 生阳新材料科技(宁波)有限公司 | 真空镀膜设备的真空度量测装置 |
CN108831818A (zh) * | 2018-06-27 | 2018-11-16 | 江苏振华新云电子有限公司 | 电离规的保护装置 |
-
2008
- 2008-10-21 CN CNU200820154252XU patent/CN201281644Y/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101928924A (zh) * | 2010-05-11 | 2010-12-29 | 赫得纳米科技(昆山)有限公司 | 真空溅射镀膜设备 |
CN103993264A (zh) * | 2013-02-19 | 2014-08-20 | 生阳新材料科技(宁波)有限公司 | 真空镀膜设备的真空度量测装置 |
CN108831818A (zh) * | 2018-06-27 | 2018-11-16 | 江苏振华新云电子有限公司 | 电离规的保护装置 |
CN108831818B (zh) * | 2018-06-27 | 2021-01-05 | 江苏振华新云电子有限公司 | 电离规的保护装置 |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130123 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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TR01 | Transfer of patent right |
Effective date of registration: 20130123 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CX01 | Expiry of patent term |
Granted publication date: 20090729 |
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CX01 | Expiry of patent term |