CN201258367Y - 一种用于直拉单晶炉热场的电极机构 - Google Patents
一种用于直拉单晶炉热场的电极机构 Download PDFInfo
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- CN201258367Y CN201258367Y CNU2008201091883U CN200820109188U CN201258367Y CN 201258367 Y CN201258367 Y CN 201258367Y CN U2008201091883 U CNU2008201091883 U CN U2008201091883U CN 200820109188 U CN200820109188 U CN 200820109188U CN 201258367 Y CN201258367 Y CN 201258367Y
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- electrode
- thermal field
- heater
- platform
- crystal furnace
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炉号 | 原热场(KW) | 改变后的热场(KW) |
GK07-5-2 | 72 | 65.5 |
GK07-5-3 | 71.3 | 66.2 |
GK07-5-4 | 72.5 | 66.4 |
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CNU2008201091883U CN201258367Y (zh) | 2008-07-11 | 2008-07-11 | 一种用于直拉单晶炉热场的电极机构 |
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CNU2008201091883U CN201258367Y (zh) | 2008-07-11 | 2008-07-11 | 一种用于直拉单晶炉热场的电极机构 |
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CN201258367Y true CN201258367Y (zh) | 2009-06-17 |
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CNU2008201091883U Expired - Lifetime CN201258367Y (zh) | 2008-07-11 | 2008-07-11 | 一种用于直拉单晶炉热场的电极机构 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102719892A (zh) * | 2012-04-24 | 2012-10-10 | 浙江上城科技有限公司 | 一种蓝宝石长晶炉节能装置 |
CN106283197A (zh) * | 2016-11-16 | 2017-01-04 | 磐石创新(北京)电子装备有限公司 | 一种用于单晶炉体的电极及其使用方法 |
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2008
- 2008-07-11 CN CNU2008201091883U patent/CN201258367Y/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102719892A (zh) * | 2012-04-24 | 2012-10-10 | 浙江上城科技有限公司 | 一种蓝宝石长晶炉节能装置 |
CN102719892B (zh) * | 2012-04-24 | 2015-01-28 | 浙江上城科技有限公司 | 一种蓝宝石长晶炉节能装置 |
CN106283197A (zh) * | 2016-11-16 | 2017-01-04 | 磐石创新(北京)电子装备有限公司 | 一种用于单晶炉体的电极及其使用方法 |
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Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Patentee after: Guotai Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: Guotai Semiconductor Materials Co., Ltd. |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. Patentee before: Guotai Semiconductor Materials Co., Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150709 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150709 |
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