CN201185192Y - Silicon-based thin-film solar cell with superlattices - Google Patents
Silicon-based thin-film solar cell with superlattices Download PDFInfo
- Publication number
- CN201185192Y CN201185192Y CNU200820004224XU CN200820004224U CN201185192Y CN 201185192 Y CN201185192 Y CN 201185192Y CN U200820004224X U CNU200820004224X U CN U200820004224XU CN 200820004224 U CN200820004224 U CN 200820004224U CN 201185192 Y CN201185192 Y CN 201185192Y
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- silicon
- superlattice
- solar cell
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a silicon-based film solar cell with superlattice. The utility model mainly comprises a substrate, one surface of which is a luminous surface; a transparent conductive film formed on the substrate and used for taking the electricity out and improving the efficiency of photoelectric conversion; an amorphous silicon P type semi-conductor layer used for generating a cavity and formed above the transparent conductive film; a superlattice semi-conductor layer which is formed by the mutually stacking of amorphous silicon and crystal silicon, used for improving the electric characteristic of the solar cell and formed on the upper side of the P type semi-conductor layer; an essence semi-conductor layer used for improving the electric characteristic of the solar cell and provided with embedded crystal silicon; an electrode formed on the upper side of an N type semi-conductor layer. The superlattice semi-conductor layer is formed by the mutually stacking of different materials in films and is used for improving the photoelectric characteristic as well as increase the sub-photoelectric conversion efficiency of the solar cell.
Description
Technical field
The utility model relates to a kind of silicon-based film solar cells with superlattice, and the mutual storehouse of film that this superlattice semiconductor layer utilizes different materials forms, can be in order to improve photoelectric characteristic.
Background technology
Present owing to the international energy shortage, and countries in the world continue the various feasible alternative energy sources of research and development always, are wherein attracted attention most with the solar cell of solar power generation again.But but solar cell has discarded object easy to use, inexhaustible, nexhaustible, no, pollution-free, do not have the part of rotation, noiselessness radiation-inhibiting heat, long service life, size random variation and combine with building and advantage such as universalness, so utilize solar cell obtaining as the energy.
In the seventies in 20th century, the silicon solar cell of at first being developed by U.S.'s Bell Laboratory progressively grows up.Along with the development of solar cell, nowadays solar cell has polytype, and monocrystaline silicon solar cell, polysilicon solar cell, non-crystal silicon solar cell, compound solar cell, DSSC etc. are typically arranged.
Silicon (Silicon) is the raw material representative of at present general solar cell, and divides on market: 1. single crystal silicon; 2. polycrystal silicon; 3. amorphous silicon.At present the most ripe industrial production manufacturing technology and maximum occupation rate of market are the electro-optical package based on monocrystalline silicon and amorphous silicon.Reason is: one, monocrystalline is most effective; Two, the amorphous price is the most cheap, and need not encapsulation, produces also the fastest; Three, the reprocessing of the cutting of polycrystalline and downstream is more difficult, and aforementioned two kinds all be easy to cut and process.In order to reduce cost, now mainly based on the develop actively amorphous silicon film solar battery, but still low excessively in practical application on its efficient.Recently, there is so-called centre can be with (Intermediate band) structure to be suggested, just between conduction band (Conduction band) and valence band (Valence band), introduces extra being with.In theory, if mix (doping) concentration height to a certain degree, promptly the distance between the foreign atom is close to a certain degree, and foreign atom just can not be considered to be separate again.Being coupled mutually (Overlapping) on rank of foreign atom can be with in the middle of will introducing between conduction band and valence band.The middle introducing that can be with can allow the script energy less than the non-absorbent photon of energy gap, has an opportunity to be absorbed, thereby the increase photoelectric current.On the other hand,, generally need adopt the P-i-N structure, can be with in the middle of allowing to be positioned at pure matter (intrinsic, i layer) zone in order to keep output voltage.Wherein attracted attention most with so-called microcrystal silicon (Microcrystalline Si, the μ c-Si:H) structure of in essential type (i type) semiconductor layer, growing up again.Yet, there is no in the past and in single P-i-N structure, make silicon-based film solar cells with superlattice.
Therefore, be necessary to propose a kind of silicon-based film solar cells, utilize superlattice structure to improve the absorption region of its optical wavelength, and increase the photoelectric conversion efficiency of solar cell with superlattice.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of silicon-based film solar cells with superlattice.Wherein, the mutual storehouse of film that this superlattice semiconductor layer utilizes different materials forms, in order to the raising photoelectric characteristic, and the photoelectric conversion efficiency of increase solar cell.
For achieving the above object, the utility model proposes a kind of silicon-based film solar cells with superlattice, it comprises a substrate; One nesa coating; One amorphous silicon p type semiconductor layer; One superlattice semiconductor layer; One essential type (i type) semiconductor layer; One n type semiconductor layer and an electrode.Wherein, the one side of this substrate is the irradiation face.This nesa coating is formed on this substrate, in order to take out electric energy and the efficient that promotes opto-electronic conversion.This amorphous silicon p type semiconductor layer is formed at this nesa coating top, in order to produce the hole.This superlattice semiconductor layer is formed at this p type semiconductor layer top, in order to improve the electrical characteristics of solar cell.This essence type (i type) semiconductor layer is formed at this superlattice semiconductor layer top, and it has edge and buries silicon metal, in order to improve the electrical characteristics of solar cell.This n type semiconductor layer is formed at this essence type (i type) semiconductor layer top, is used to produce electronics.At last, this electrode is formed at this n type semiconductor layer top, in order to take out electric energy and the efficient that promotes opto-electronic conversion.
According to a kind of silicon-based film solar cells with superlattice of the present utility model, wherein the structure of this superlattice semiconductor layer is formed by amorphous silicon and the mutual storehouse of silicon metal.
According to a kind of silicon-based film solar cells with superlattice of the present utility model, wherein the integral thickness of this superlattice semiconductor layer is between 10 nanometer to 150 nanometers.
According to a kind of silicon-based film solar cells with superlattice of the present utility model, wherein the number of times of amorphous silicon in this superlattice semiconductor layer and the mutual storehouse of silicon metal is between 3 to 10 times.
In sum, the silicon-based film solar cells with superlattice of the present utility model, the silicon metal 151 that edge buries in this essence type (i type) semiconductor layer 150 that it has can be in order to improve efficiency of light absorption.Utilize this superlattice semiconductor layer 140 that the mutual storehouse of different materials forms except can more increasing the photoelectric conversion efficiency of solar cell in order to improve photoelectric characteristic.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is shown as a kind of side cutaway view with silicon-based film solar cells of superlattice of the present utility model;
Fig. 2 is shown as the side cutaway view of superlattice semiconductor layer of the present utility model.
Wherein, Reference numeral:
100: a kind of silicon-based film solar cells with superlattice
110: substrate 120: nesa coating 130: the amorphous silicon p type semiconductor layer
140: superlattice semiconductor layer 150: essential type (i type) semiconductor layer
160:N type semiconductor layer 170: electrode
141: amorphous silicon semiconductor layer
142: the crystal silicon semiconductor layer
151: the silicon metal that edge buries in essential type (i type) semiconductor layer
Embodiment
Though the utility model can show as multi-form embodiment, but accompanying drawing those shown and be preferred embodiment of the present utility model in expositor hereinafter, and please understand person disclosed herein and be thought of as an example of the present utility model, and be not that intention is in order to be limited to the utility model in diagram and/or the described specific embodiment.
Please refer to Fig. 1, it is depicted as a kind of side cutaway view with silicon-based film solar cells 100 of superlattice, and this structure is first embodiment of the present utility model.This silicon-based film solar cells 100 with superlattice comprises a substrate 110; One nesa coating 120; One amorphous silicon p type semiconductor layer 130; One superlattice semiconductor layer 140; One essential type (i type) semiconductor layer 150; One n type semiconductor layer 160 and an electrode 170.
This substrate 110 is selected from silicon, glass, plastic base, flexible base plate or corrosion resistant plate and forms one of group family.In order to obtain preferable light transmission features and lower manufacturing cost, can adopt glass and corrosion resistant plate as substrate 110.
This nesa coating 120 is formed on this substrate 110, and its main purpose is collected in electrode 170 for what improve electric current, in order to promote the efficient of opto-electronic conversion.Wherein, this nesa coating 120 can select for use technologies such as common vapour deposition method (Evaporation), sputtering method (Sputter), galvanoplastic, print process as main technology mode.And the material of this nesa coating 120 can be selected from indium tin oxide (Indium tinoxide, ITO), tin ash (Stannum dioxide, SnO
2), zinc oxide (Zinc oxide, ZnO) or impure zinc oxide etc. form one of group.
This amorphous silicon p type semiconductor layer 130 is formed on this nesa coating 120, first embodiment of the present utility model is in the optional electricity consumption slurry of these amorphous silicon p type semiconductor layer 130 films enhanced chemical formula gas-phase deposition (Plasma-enhanced chemical vapor deposition, PECVD), hot filament CVD (Hot-wire chemi cal vapor deposition, HW-CVD) or the vapour deposition of superfrequency plasma enhanced chemical formula (Very high frequency-plasma enhance chemical vapordeposition, VHF-PECVD) etc. technology is as the main technique mode.
This superlattice semiconductor layer 140 is formed at this amorphous silicon p type semiconductor layer 130 tops, and this superlattice semiconductor layer 140 is formed by amorphous silicon and the mutual storehouse of silicon metal, and wherein the degree of crystallinity of the silicon metal in the superlattice semiconductor layer 140 is than between 10% to 50%.The crystallite dimension of the silicon metal in this superlattice semiconductor layer 140 is between 5 nanometer to 30 nanometers.The storehouse mode of this superlattice semiconductor layer 140 as shown in Figure 2, and this storehouse mode can improve open circuit voltage and increase photoelectric conversion efficiency.Amorphous silicon semiconductor layer 141 in this superlattice semiconductor layer 140 is about 100 nanometers with the overall film thickness of crystal silicon semiconductor layer 142, and amorphous silicon semiconductor layer 141 thickness in this superlattice semiconductor layer 140 must be less than crystal silicon semiconductor layer 142 thickness.Wherein, the number of times of amorphous silicon semiconductor layer 141 in this superlattice semiconductor layer 140 and crystal silicon semiconductor layer 142 mutual storehouse is between 3 to 10 times.
This essence type (i type) semiconductor layer 150 is formed at this superlattice semiconductor layer 140 tops, and should form it by mixed silane gas and hydrogen by essence type (i type) the semiconductor layer 150 interior silicon metals 151 that bury of inlaying, can be in order to improve electrical characteristics, and increasing the conversion efficiency of solar cell, the silicon metal 151 that edge buries in essential type (i type) semiconductor layer 150 is selected from nanocrystal silicon, microcrystal silicon and polysilicon and forms any material in the group.The crystal size of the silicon metal 151 that edge buries in this essence type (i type) semiconductor layer 150 is between 10 nanometer to 300 nanometers.Wherein, this essence type (i type) semiconductor layer 150 has the greatest impact for the electrical characteristics of thin film solar cell, its be since electronics and hole when material internal conducts, if this essence type (i type) semiconductor layer 150 thickness are blocked up, it is high that both overlap probability, for avoiding this phenomenon to take place, essential type (i type) semiconductor layer 150 is unsuitable blocked up.Otherwise this essence type (i type) semiconductor layer 150 thickness are crossed when approaching, and easily cause again and inhale the optical activity deficiency.This essence type (i type) semiconductor layer 150 is generally based on the siliceous film of amorphous (a-Si:H).Yet in the short time of the siliceous film of amorphous after illumination, its performance will significantly fail, promptly so-called SW (Staebler-Wronski) effect, its attenuation amplitude about 15%～35%.This SW effect since in the material partly unsaturated silicon atom (Dangling bond, DB) because of after the rayed, the event that institute's recurring structure changes.The carrier transport factor of microcrystalline silicon film exceeds 1～2 order of magnitude than general amorphous silicon membrane, and the dark conductance value is then between 10
-5～10
-7(S.cm
-1) between, obviously exceed 3～4 orders of magnitude of the siliceous film of traditional amorphous, so use microcrystalline silicon film can be improved the conversion efficiency of solar cell.
This n type semiconductor layer 160 is formed on this essence type (i type) semiconductor layer 150, and the technology mode of this n type semiconductor layer 160 is selected to plasma enhanced chemical formula gas-phase deposition, hot filament CVD or superfrequency plasma enhanced chemical formula gas-phase deposition as the main technique mode.
This electrode 170 is formed on this n type semiconductor layer 160, and wherein this electrode 170 can select for use technologies such as common vapour deposition method, sputtering method, galvanoplastic, print process as the main technique mode.The material of this electrode 170 can be selected indium oxide layer of tin, tin ash, zinc oxide, impure zinc oxide, nickel, gold, silver, titanium, copper, palladium, and aluminium etc. for use, and its effect is identical with this nesa coating 120.
In sum, the silicon-based film solar cells with superlattice of the present utility model, the silicon metal 151 that edge buries in this essence type (i type) semiconductor layer 150 that it has can be in order to improve efficiency of light absorption.Utilize this superlattice semiconductor layer 140 that the mutual storehouse of different materials forms except can more increasing the photoelectric conversion efficiency of solar cell in order to improve photoelectric characteristic.
Certainly; the utility model also can have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the utility model.
Claims (6)
1. the silicon-based film solar cells with superlattice is characterized in that, comprises:
One substrate, the one side of this substrate are the irradiation face;
One nesa coating that is used to take out electric energy and promotes the efficient of opto-electronic conversion is formed on this substrate;
One is used to produce the amorphous silicon p type semiconductor layer in hole, is formed at this nesa coating top;
One is formed and in order to the superlattice semiconductor layer of the electrical characteristics that improve solar cell, is formed at this p type semiconductor layer top by amorphous silicon and the mutual storehouse of silicon metal;
The one essential type semiconductor layer in order to the electrical characteristics that improve solar cell has edge and buries silicon metal in this essence type semiconductor layer, be formed at superlattice semiconductor layer top;
One is used to produce the n type semiconductor layer of electronics, is formed at this essence type semiconductor layer top; And
One in order to the electrode of taking-up electric energy with the efficient that promotes opto-electronic conversion, is formed at this n type semiconductor layer top.
2. a kind of silicon-based film solar cells with superlattice according to claim 1 is characterized in that, this substrate is selected from glass substrate, quartz base plate, plastic base, transparent flexible base plate and forms any in the group.
3. a kind of silicon-based film solar cells with superlattice according to claim 1 is characterized in that, this superlattice semiconductor layer is the semiconductor layer of integral thickness between 10 nanometer to 150 nanometers.
4. a kind of silicon-based film solar cells with superlattice according to claim 1 is characterized in that, the crystallite dimension of the silicon metal in this superlattice semiconductor layer is between 5 nanometer to 30 nanometers.
5. a kind of silicon-based film solar cells with superlattice according to claim 1 is characterized in that, the thickness of the amorphous silicon in this superlattice semiconductor layer is less than the thickness of silicon metal.
6. a kind of silicon-based film solar cells with superlattice according to claim 1 is characterized in that, the crystal size of the silicon metal that edge buries in this essence type semiconductor layer is between 10 nanometer to 300 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820004224XU CN201185192Y (en) | 2008-02-01 | 2008-02-01 | Silicon-based thin-film solar cell with superlattices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820004224XU CN201185192Y (en) | 2008-02-01 | 2008-02-01 | Silicon-based thin-film solar cell with superlattices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201185192Y true CN201185192Y (en) | 2009-01-21 |
Family
ID=40272925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200820004224XU Expired - Fee Related CN201185192Y (en) | 2008-02-01 | 2008-02-01 | Silicon-based thin-film solar cell with superlattices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201185192Y (en) |
-
2008
- 2008-02-01 CN CNU200820004224XU patent/CN201185192Y/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101552302A (en) | Silicon film solar cell with superlattice P-type semiconductor layer | |
| CN101567404A (en) | Multisection silicon-based film solar cell structure and process thereof | |
| CN207282509U (en) | The crystalline silicon of double-side photic/film silicon heterojunction solar battery | |
| CN201936901U (en) | Composition structure of thin-film solar battery | |
| CN101640226B (en) | Lamination structure and thin film solar cell with same | |
| KR20100025068A (en) | MANUFACTURING METHOD OF COMPOUND SOLLAR CELL USING Z n O NANOROD AND THE COMPOUND SOLLAR CELL | |
| CN201185191Y (en) | Silicon-based thin-film solar cell with multiple stacks | |
| CN101499496A (en) | Silicon thin-film solar cell | |
| CN101499497A (en) | Multi-energy level silicon based thin-film solar cell | |
| CN102138220A (en) | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light- induced degradation for improved stabilized performance | |
| KR20100096642A (en) | Manufacturing method of compound sollar cell using window layer by atmospheric plasma treatment and the compound sollar cell | |
| CN101777588B (en) | Light scattering multilayered structure and manufacturing method thereof | |
| CN102433545A (en) | Suede-structured ZnO film prepared by alternative growth technology and application thereof | |
| CN103975443B (en) | Solaode and the solar module using it | |
| CN201185192Y (en) | Silicon-based thin-film solar cell with superlattices | |
| KR101032270B1 (en) | Photovoltaic device including flexible or inflexibel substrate and method for manufacturing the same | |
| CN201051505Y (en) | A mixed solar battery | |
| CN102544134A (en) | Thin film solar cell stack manufacturing method and thin film solar cell thereof | |
| CN103594535A (en) | Silicon nano wire quantum well solar cell and preparation method thereof | |
| TW200933908A (en) | A silicon-based thin film solar-cell | |
| CN103594543B (en) | A kind of photovoltaic cell | |
| CN208521944U (en) | A kind of hetero-junctions back contact solar cell | |
| CN103594552A (en) | Manufacturing method for photovoltaic cell | |
| WO2006049003A1 (en) | Process for producing thin-film photoelectric converter | |
| KR101326539B1 (en) | Thin-film typed solar cell comprising wo3 buffer layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20100201 |