CN201117655Y - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN201117655Y
CN201117655Y CNU2007201834449U CN200720183444U CN201117655Y CN 201117655 Y CN201117655 Y CN 201117655Y CN U2007201834449 U CNU2007201834449 U CN U2007201834449U CN 200720183444 U CN200720183444 U CN 200720183444U CN 201117655 Y CN201117655 Y CN 201117655Y
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emitting diode
light
diode chip
light emitting
red light
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谢建晖
郑绍昌
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PRO-LIGHT TECHNOLOGY Ltd
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PRO-LIGHT TECHNOLOGY Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本实用新型公开了一种发光二极管，包括基座，固定在所述基座上的蓝光发光二极管芯片，所述蓝光发光二极管芯片上覆盖有黄色荧光层；其中，所述基座上还固定有红光发光二极管芯片，所述红光发光二极管芯片和所述蓝光发光二极管芯片一同被覆盖于所述黄色荧光层内。优选地，所述红光发光二极管芯片的波长为610～640nm。本实用新型的发光二极管是在蓝光发光二极管芯片配合黄色荧光粉的暖白光封装结构基础上，增加了波长为610至640nm的红光发光二极管芯片进行混色及调色，从而起到调节色温效果，实现色温从1500K到2700K的平滑线性过度以及提高显色性，能真实还原物体本身固有的颜色。

Description

发光二极管
技术领域
本实用新型涉及一种发光二极管。
背景技术
半导体照明是新型高效固体光源，具有节能、环保和寿命长等显著优点。世界照明工业的转型和新兴半导体照明产业的崛起，巳成为不争的事实。半导体照明以其技术的先进性和产品应用的广泛性，被公认为是21世纪最具发展前景的高技术领域之一。
发光二极管作为一种半导体固体发光器件，它是利用固体半导体芯片作为发光材料，其发光机理是由二极管特殊的组成结构决定的：二极管主要由PN结芯片、电极和光学系统组成，当在电极上加上正向偏压之后，使电子和空穴分别注入P区和N区，当非平衡少数载流子和多数载流子复合时，就会以辐射光子的形式将多余的能量转化为光能。其发光过程包括三个部分：正向偏压下的载流子注入、复合辐射和光能传输。由此可见二极管主要是靠载流子的不断移动而发光的，发光二极管光源无灯丝、工作电压低1.5-3.5V，使用寿命可达5万到10万小时，利环保生产中无有害元素、使用中不发出有害物质、无辐射。
下面简单介绍一下光源的颜色，它包括两方面的意思：色表和显色性。人眼直接观察光源时看到的颜色，称为光源的色表，色坐标、色温等就是描述色表的量；而显色性是指光源的光照射到物体上所产生的客观效果：如果各色物体受照后的颜色效果和标准光源照射时一样，则认为该光源的显色性好；反之，如果物体在受照后的颜色失真，该光源的显色性就差。
常见之白光发光二极管主要包括下列两种类型：
1、同时使用红光、蓝光及绿光发光二极管芯片，蓝光发光二极管单元、红光发光二极管单元及绿光发光二极管单元经驱动后可以分别发出蓝光、红光及绿光，以混合成白光。由于不同方向光色不一，因此不易混出均匀白光，其显色性低。
2、以蓝光发光二极管芯片搭配黄色荧光粉，以产生白光。其中，黄色无机荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后，可发出黄色之荧光，黄色光再与没有被吸收的蓝光一起混光成为二波长白光。但采用这种结构的发光二极管的显色性较低，色彩还原性较差；特别是当其被应用在普通照明领域时，其显色性无法达到普通照明的要求。
发明内容
本实用新型的目的在于提供一种可调节色温和提高显色性的发光二极管。
为实现上述目的，本实用新型提供了一种发光二极管，包括基座，固定在所述基座上的蓝光发光二极管芯片，所述蓝光发光二极管芯片上覆盖有黄色荧光层；其中，所述基座上还固定有红光发光二极管芯片，所述红光发光二极管芯片和所述蓝光发光二极管芯片一同被覆盖于所述黄色荧光层内。
优选地，所述红光发光二极管芯片的波长为610～640nm。
所述蓝光发光二极管芯片与红光发光二极管芯片之间串联或并联。
所述红光发光二极管芯片可以有多个，各红光发光二极管芯片之间串联或并联。
本实用新型的发光二极管是在蓝光发光二极管芯片配合黄色荧光粉的暖白光封装结构基础上，增加了波长为610至640nm的红光发光二极管芯片进行混色及调色，从而起到调节色温效果，实现色温从1500K到2700K的平滑线性过度以及提高显色性，能真实还原物体本身固有的颜色。黄色荧光层中的黄色荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后，可发出黄色之荧光，黄色光再与没有被吸收的蓝光一起混光成为暖白光，暖白光与红光发光二极管芯片所发出之红光混色后即成为高显色性的暖白光，且兼具良好的色彩还原性。即使在低色温的情况下，其显色指数也能在Ra 80以上。
附图说明
图1为本实用新型发光二极管应用于灯泡型封装结构的实施例示意图；
图2为本实用新型发光二极管应用于表面黏着型封装结构的实施例示意图。
以下结合附图对本实用新型的较佳实施例作进一步详细的描述。
具体实施方式
图1所示为本实用新型发光二极管应用于灯泡型封装结构的实施例。请参阅图1，本实施例是在一导线支架1的端部成形的晶杯2中设置一蓝光发光二极管芯片3以及一波长为610至640nm的红光发光二极管芯片4，且该两发光二极管芯片3、4分别由焊线5、6接至另一导线支架7，使两发光二极管芯片3、4分别与导线支架7产生电性连接。所述蓝光发光二极管芯片3与红光发光二极管芯片4之间形成串联或并联。接着，将由YAG:Ce体系石榴石黄色发光材料等构成的黄色荧光粉填注于该晶杯2中，形成覆盖于该两发光二极管芯片3、4上的黄色荧光层8。接着，以透光的封装胶体9进行封装而成为一灯泡型发光二极管。黄色荧光层8中的黄色荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后，可发出黄色之荧光，黄色光再与没有被吸收的蓝光一起混光成为暖白光，暖白光与红光发光二极管芯片所发出之红光混色后即成为高显色性的暖白光。
图2所示为本实用新型发光二极管应用于表面黏着型封装结构的实施例。请参阅图2，本实施例是在一设有印刷电路层10的基板11上设置一蓝光发光二极管芯片12以及一波长为610至640nm的红光发光二极管芯片13，且该两发光二极管芯片12、13分别由两组焊线14、15接至印刷电路层10，使两发光二极管芯片12、13分别与印刷电路层10产生电性连接。所述蓝光发光二极管芯片3与红光发光二极管芯片4之间形成串联或并联。接着，于该两发光二极管芯片12、13上涂覆由YAG:Ce体系石榴石黄色发光材料等构成的黄色荧光粉，形成覆盖于该两发光二极管芯片12、13上的黄色荧光层16。接着，在此结构上以透光的封装胶体17进行封装，而成为一表面黏着型发光二极管。黄色荧光层16中的黄色荧光粉受到蓝光发光二极管芯片所发出之蓝光照射之后，可发出黄色之荧光，黄色光再与没有被吸收的蓝光一起混光成为暖白光，暖白光与红光发光二极管芯片所发出之红光混色后即成为高显色性的暖白光。
本实用新型的发光二极管是在蓝光发光二极管芯片配合黄色荧光粉的暖白光封装结构基础上，增加波长为610至640nm的红光发光二极管芯片进行混色及调色，从而起到调节色温、提高显色性的效果。
以上所述的仅是本实用新型的优选实施例。应当指出，对于本领域的普通技术人员来说，在不脱离本实用新型发明构思的前提下，还可以做出若干变形和改进，这些变更和改变应视为属于本实用新型的保护范围。例如，所述红光发光二极管芯片可以设置多个，各红光发光二极管芯片之间形成串联或并联关系。

Claims (4)

1、发光二极管，包括
基座；
固定在所述基座上的蓝光发光二极管芯片；
所述蓝光发光二极管芯片上覆盖有黄色荧光层；
其特征在于：
所述基座上还固定有红光发光二极管芯片；
所述红光发光二极管芯片和所述蓝光发光二极管芯片一同被覆盖于所述黄色荧光层内。
2、根据权利要求1所述发光二极管，其特征在于：
所述红光发光二极管芯片的波长为610～640nm。
3、根据权利要求1或2所述发光二极管，其特征在于：
所述蓝光发光二极管芯片与红光发光二极管芯片之间串联或并联。
4、根据权利要求1或2所述发光二极管，其特征在于：
所述红光发光二极管芯片有多个，各红光发光二极管芯片之间串联或并联。
CNU2007201834449U 2007-10-25 2007-10-25 发光二极管 Expired - Lifetime CN201117655Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231377A (zh) * 2010-12-18 2011-11-02 木林森股份有限公司 一种高显色性的发光二极管及其制造方法
CN102543980A (zh) * 2010-12-31 2012-07-04 矽品精密工业股份有限公司 发光二极管封装结构及其制造方法
WO2016141576A1 (zh) * 2015-03-09 2016-09-15 王纪年 基于微电流发光的超级节电led照明灯

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231377A (zh) * 2010-12-18 2011-11-02 木林森股份有限公司 一种高显色性的发光二极管及其制造方法
CN102543980A (zh) * 2010-12-31 2012-07-04 矽品精密工业股份有限公司 发光二极管封装结构及其制造方法
WO2016141576A1 (zh) * 2015-03-09 2016-09-15 王纪年 基于微电流发光的超级节电led照明灯

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