CN201096867Y - Multi-function tester for measuring semiconductor silicon material P/N and resistance rate - Google Patents
Multi-function tester for measuring semiconductor silicon material P/N and resistance rate Download PDFInfo
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- CN201096867Y CN201096867Y CN 200720127466 CN200720127466U CN201096867Y CN 201096867 Y CN201096867 Y CN 201096867Y CN 200720127466 CN200720127466 CN 200720127466 CN 200720127466 U CN200720127466 U CN 200720127466U CN 201096867 Y CN201096867 Y CN 201096867Y
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Abstract
The utility model relates to a multi-purpose tester for measuring the P/N type of the semiconductor silicon material and the specific resistance, which comprises a multi-output control transformer, a rectifying circuit and a voltage stabilizing circuit, and also comprises a single crystal silicon P/N type probe connection detecting port and a single crystal silicon specific resistance probe connection detecting port. The single crystal silicon P/N type probe connection detecting port is connected with one output terminal of the multi-output control transformer, also connected with the rectifying circuit and a filter circuit, and connected with an operational amplifier, and the operational amplifier is connected with a digital tube which can display the single crystal silicon P/N type in a driving way through an NPN triode and a PNP triode respectively; the single crystal silicon specific resistance probe connection detecting port is connected with the rectifying circuit, the filter circuit and a constant current voltage stabilizing circuit, the rectifying circuit is connected with one output terminal of the multi-output control transformer, and also connected with a digital voltmeter for display the specific resistance. The multi-purpose tester has the advantages of simple structure, small carrying volume, fast and stable data measuring, and simple and feasible operation.
Description
Technical field
The utility model relates to a kind of multifunctional tester of measuring semiconductor silicon material P/N type and resistivity, is the detecting instrument of a kind of semicon industry about the test of silicon single crystal material physical parameter, can detect semi-conductive conduction type and resistivity size simultaneously.
Background technology
At present, the method for measuring semiconductor silicon material P/N type is a lot, mainly contains thermo-electric method, and rectification method, and Superposition Method, thermo-electric method have thermoprobe method and cold spy method, and rectification method has two sonde methods and three probe method.In addition, also the direction of with good grounds hall electromotive force is judged the Hall voltage method of conduction type; Silicon single crystal model thermoprobe method commonly used and three probe method are measured.And the single crystal silicon resistivity measuring method mainly is contact method in industry production, i.e. DC two point probe method and four probe method (illustrate: these two kinds of detection methods all pass to direct supply to measured body when measuring single crystal silicon resistivity, so be called DC-method).DC two point probe method is by measuring the bulk resistor of silicon single crystal, conversing resistivity, because two sonde method measured resistivity degree of accuracy height are used for scientific research more, but measuring resistance rate scope 10
-2-10
5Ω .CM; It is four probe method that existing domestic monocrystalline silicon production producer uses more.The four probe method needle gage is that four pins of 1mm are pressed on the flat surface of silicon materials simultaneously, the constant current source that utilizes devices such as linear voltage stabilization element in the circuit and electric current scale-up version triode to form is given 1 and No. 4 probe galvanization of outside, middle two pins are measured voltage with the digital voltmeter of high input impedance, thereby utilization experimental formula: ρ=CV2-3/I can calculate the resistivity size of silicon materials, wherein: C is the probe coefficient, and this coefficient is proofreaied and correct with the standard sample that indicates the fixed resistance rate and determined.
Mainly there is the deficiency of following three aspects in the surveying instrument that uses in the existing silicon single crystal industry: 1, these two parameters of the measurement of silicon single crystal conductivity model and resistivity need be tested respectively with two kinds of measuring equipments, method of testing and complex procedures, measurement environment is strict; 2, surveying instrument equipment failure rate height, maintenance of equipment difficulty, accessory costliness.3, survey material time and silicon material kind are restricted, and stability is bad.
The utility model content
The utility model instrument technical matters to be solved is the metering system that exists at existing instrument and the defective of complex circuit designs, provide a kind of simple in structure, portable, volume is little, measurement data is fast, steady, simple to operate, efficient is high, the multifunctional single crystal silicon tester of energy measurement semiconductor silicon material P/N type and resistivity.
The technical scheme that solution the utility model technical matters is adopted is: the multifunctional tester of this measurement semiconductor silicon material P/N type and resistivity comprises multichannel output control transformer, rectification circuit, mu balanced circuit, also comprise monocrystalline silicon P/N type probe joint detection port and monocrystalline silicon resistivity probe joint detection port, monocrystalline silicon P/N type probe joint detection port is connected with an output terminal of multichannel output control transformer, this probe joint detection port also with rectification circuit, filtering circuit connects, connect an operational amplifier again, operational amplifier drives with the charactron that can show monocrystalline silicon P/N type with the positive-negative-positive triode by NPN respectively and is connected, the pulsating current signal that probe in detecting monocrystalline silicon P/N type produces, carrying out electric current through operational amplifier amplifies, and difference conducting NPN or positive-negative-positive triode, drive charactron, show the P type or the N type of monocrystalline silicon material respectively; Monocrystalline silicon resistivity probe joint detection port is connected with rectification circuit, a filtering, constant current voltage stabilizing circuit, rectification circuit is connected with an output terminal of multichannel output control transformer, and resistivity probe joint detection port also is connected with the digital voltmeter that shows resistivity.Digital voltmeter is connected by the output terminal of regulator rectifier circuit with multichannel output control transformer.Monocrystalline silicon P/N type probe adopts three probes, and corresponding probe joint detection port is monocrystalline silicon P/N type three probe joint detection ports; Monocrystalline silicon resistivity probe adopts four point probe, and corresponding probe joint detection port is a resistivity four point probe joint detection port.Four probe method adopts and arranges in a line, four impartial at interval metal probes vertically are pressed on the tested silicon material table plane with certain pressure, between 1 and 4 probes, pass to 10-50mA direct current (supplying with) by the constant current source in the constant current voltage stabilizing circuit, through silicon material surface just produced certain voltage between 2 and 3 probes this moment, utilizes experimental formula: ρ=CV again
2-3/ I calculates the resistivity of silicon single crystal, thus calibration and detect the conductivity degree of semiconductor material.
The utility model is concentrated the function of measuring silicon single crystal PN model and resistance parameter and is designed on the circuit board, two measurement port of design on the plate, these two measurement port are respectively the three probe joint detection ports of the detection monocrystalline silicon P/N type that connects three probes and the four point probe joint detection port of the detection monocrystalline silicon resistivity that is connected four point probe, to detect resistivity and P/N type circuit unites two into one, the resistivity and the conduction type of silicon materials measured and judged to external two test probes respectively.Detected silicon materials conduction type is presented on two seven segment digital tubes after calculating through counting circuit (be among Fig. 1 be the counting circuit that core devices is formed by the LM741 amplifier), and resistivity value is presented on the digital voltmeter after amplifying circuit calculating.The main element that adopts has: a multichannel output control transformer, three road output terminals are arranged, 4 rectifier bridges that are connected with the transformer output terminal, 4 78 serial three terminal regulators are connected with rectifier bridge with 1 7912 three terminal regulator, an operational amplifier, and 2 NPN triodes, a PNP triode and a digital voltmeter.The circuit of measuring silicon single crystal P/N model comprises control transformer, rectifier bridge, voltage stabilizer, NPN triode, PNP triode, operational amplifier; The circuit of measuring the single crystal silicon resistivity parameter comprises control transformer, rectifier, voltage stabilizer, digital voltmeter.
The utility model can be used to measure semiconductor silicon material P/N type, can be used for the measuring semiconductor silicon material resistivity again, simple in structure, portable, volume is little, measurement data is fast, steady, simple to operate, efficient is high.
Description of drawings
Fig. 1 is circuit theory diagrams of the present utility model
Fig. 2 the utility model test monocrystalline silicon material resistivity circuit theory control flow block diagram
Fig. 3 the utility model test silicon material P/N type circuit theory control flow block diagram
Fig. 4 is the utility model contour structures front panel synoptic diagram
Fig. 5 is the utility model contour structures rear panel synoptic diagram
Among the figure: the 1-digital voltmeter, 2-shows N type-word mother's seven segment digital tubes, 3-shows low-resistance silicon material light emitting diode, 4-shows P type-word mother's seven segment digital tubes, the 5-instrument power source is opened pilot lamp, the 6-four point probe well contacts silicon material pilot lamp, 7-resistivity calibration adjustments potentiometer, the 8-power switch device, 9-digital voltmeter operating switch, 10-220VAC supply hub, 11-protective tube, 12-three probe aviation plugs, 13-four point probe aviation plug, J4-are two light emitting diode lamp splicing ear interfaces on the front panel, and two light emitting diodes are respectively the pilot lamp 6 that instrument power source pilot lamp 5 and four point probe well contact the silicon material, the joint detection port of J5-Four probing pin probe, the connectivity port of the connectivity port of J6-seven segment digital tubes and demonstration low-resistance silicon material light emitting diode, the joint detection port of J7-three probes, the connectivity port of J10-digital voltmeter, the LS-hummer, this device operating voltage is 5VDC.
Embodiment
Below in conjunction with the utility model embodiment accompanying drawing, the utility model is described in further detail:
As shown in Figure 1, the function of measuring silicon single crystal P/N model and resistance parameter concentrated be designed on the circuit board, two measurement port of design on the plate, these two measurement port are respectively joint detection port J7 and the J5 in the circuit diagram of Fig. 1, the joint detection port J7 of monocrystalline silicon P/N type probe is three probe joint detection ports, adopt three probe aviation plugs 12, three probes of can pegging graft; The joint detection port J5 of resistivity probe is a four point probe joint detection port, adopts four point probe aviation plug 13, the Four probing pin probe of can pegging graft.The main element that adopts in the present embodiment has: one three tunnel output control transformer, transformer three road output terminals are respectively T1, T2, the T3 among Fig. 1,4 KBP10 rectifier bridges, 4 78 serial three terminal regulators, wherein L7824CV is the three terminal regulator of voltage stabilizing output 24VDC, with 1 7912 three terminal regulator, a LM741 operational amplifier reaches 2 2N5551 or BC547B NPN triode Q1 and Q2, a 2N5401PNP triode Q3 and a ZF5135 digital voltmeter that is connected on the J10 of connectivity port.
The circuit of measuring silicon single crystal P/N model comprises control transformer, three probe joint detection ports, rectifier bridge, voltage stabilizer, NPN triode, PNP triode, operational amplifier.Three probe joint detection port J7 and filtering circuits, the voltage stabilizer of mu balanced circuit, the NPN triode, the PNP triode, connect 2 charactrons that can show monocrystalline silicon P/N type after operational amplifier connects and (can adopt light-emitting diodes cast charactron, model is: the 8016AS seven segment digital tubes), can show its P/N type respectively, three probe joint detection port J7 are connected with a rectification circuit simultaneously, the current signal that three probe measurements go out is through the rectifier bridge D2 of this rectification circuit rectification, rectifier bridge be connected with hummer LS again after a voltage stabilizer U2 is connected, simultaneously with connectivity port J6 on demonstration low-resistance silicon material light emitting diode 3 and connect.Form and detect P/N type and low-resistance silicon material buzz circuit.
The circuit of measuring the single crystal silicon resistivity parameter comprises four point probe joint detection port, control transformer, rectifier, voltage stabilizer, digital voltmeter.
Control transformer three tunnel control output end T1, T2, T3 are respectively in the present embodiment: exchange a route control output end T1 and output to the rectification circuit that rectifier bridge D3 and D4 by two parallel connections form, the rectifier bridge of two parallel connections is connected with three terminal regulator respectively, three terminal regulator (U4) the one end that is connected with rectifier bridge D3 is connected with the joint detection port J7 of three probes by filtering circuit, this three terminal regulator other end is connected with operational amplifier, and operational amplifier drives with the charactron that can show monocrystalline silicon P/N type with the positive-negative-positive triode through NPN respectively and is connected; Three terminal regulator U5 one end that is connected with rectifier bridge D4 provides power supply for the four point probe that is connected on the port J5, is connected the back by a constant current voltage stabilizing circuit with triode Q1 by resistivity calibration potentiometer R and forms with the output terminal that stabilivolt D5 is connected in parallel on three terminal regulator U5; Exchange two tunnel, three route control output end T2, T3 output, give two rectification circuit power supplies that are made of rectifier bridge D1 and D2 successively, rectifier bridge D1 and three terminal regulator U1 are connected to the connectivity port J10 power supply of digital voltmeter; It is the connectivity port J6 and the hummer LS power supply of 2 seven segment digital tubes simultaneously that rectifier bridge D2 is connected with three terminal regulator U2.Exchange one the tunnel and be output as 16V, export by control output end T1, give among Fig. 1 two rectifier bridge D3 and D4 power supply respectively, exchange two the road and three the tunnel and all export 10V, export by control output end T2, T3, give rectifier bridge D1 and D2 power supply among Fig. 1, provide different burning voltages to form correspondent control circuits by three terminal regulator 7805,7812 and 7912 respectively simultaneously.
The current value of 1, the 4 metal probe input when being used for regulating four point probe test silicon material resistivity behind the adjustable potentiometer 7 on the front panel (R among Fig. 1) the process transistor Q1 (can adopt model 2N5551), the resistivity of promptly calibrating the silicon material.(Four probing pin probe is connected on the J5 port position among Fig. 1)
The millivolt voltage signal that the LM741 operational amplifier produces during to three probe test silicon material amplifies, and drive conducting two triode Q2, Q3 respectively, amplify through excess current, drive the P/N type that seven segment digital tubes (being connected on the J6 of connectivity port) shows the silicon material in Fig. 1.
The ZF5135 digital voltmeter operating voltage that is connected on the J10 of connectivity port is: DC5V, main effect is that the voltage signal that will measure carries out the A/D conversion, promptly is used for showing the resistivity size of silicon material.
The appearance structure of present embodiment, as Fig. 4, shown in Figure 5, comprise on the panel: have the light emitting diode lamp 3,5,6 that shows various duties,, show the seven segment digital tubes 2,4 of silicon materials conduction types (N type/P type) and a digital voltmeter 1 that shows silicon material resistivity.
The course of work of the present utility model below is described.
1, the P of silicon single crystal, N type detect
The utility model three probe test P/N type methods are to adopt rectification method to judge the conduction type of monocrystalline silicon, three probe method adopts three common draw points of metal to contact with silicon material point and produces P-N knot rectifying effect, three metal probes form rectification with the silicon material and contact, three diodes of equivalence, 1, (middle probe 2 directly connects the negative pole of power supply) passes to 16～18V alternating voltage between 2 probes, the polarity of the electromotive force that produces at probe 2 and 3 measurements silicon material.For N type silicon material, produce positive pulsating direct current component between the probe 2 and 3, for P type silicon materials, U
2-3Has negative pulsating direct current component between (voltage difference between the probe 2 and 3), the pulsating direct current component that produces is through the interference of power frequency filtering circuit elimination power frequency component, enter the double operational circuit subsequently and carry out the amplification of signal, light digital display tube with driving and show test results, thereby judge the conduction type of silicon material.
The P of silicon single crystal, N type testing circuit test job process:
Fig. 3 is the P/N type circuit working FB(flow block) of test silicon monocrystalline.
A) be N type silicon material when detecting: three probes (being connected on the connectivity port J7 interface of three probes of Fig. 1 or three probe aviation plugs 12 among Fig. 4) are pressed on the silicon material surface with the good contact of certain pressure, produce positive pulsating direct current component between the probe 2 and 3 in three probes at this moment, wave circuit after filtration: in Fig. 1 by capacitor C 17, C18, the LC pi type filter filtering ripple that inductance L 1 is formed becomes level and smooth direct current signal, directly the flow through emitter of Q3 of this direct current signal, simultaneously the LM741 operational amplifier carries out current signal and amplifies current signal by its output terminal 6 outputs through R22, R20, three resistance of R26 lead to the base stage of triode Q3, drive positive-negative-positive triode Q3 conducting, last current signal flows on the terminal 2 of connectivity port J6, thereby the seven segment digital tubes 2 of lighting Fig. 4 is to show N type silicon material.
B) be P type silicon material when detecting: produce negative pulsating direct current component between the probe 2 and 3 in three probes at this moment, current signal three terminal regulator 7912 (U3 among Fig. 1) voltage regulation filtering of flowing through, one the road flows into LM741 amplifier 4 pin, for the LM741 amplifier provides power supply, but one road R8 zero potentiometer of flowing through, carrying out current signal by LM741 operational amplifier inverting input again amplifies, the positive current signal of LM741 operational amplifier output terminal output is through R22 then, R20, three resistance of R21 lead to triode Q2 base stage, come driving N PN type triode Q2 conducting, last current signal flows on the terminal 5 of connectivity port J6, thereby the seven segment digital tubes 4 of lighting Fig. 4 is to show P type silicon material.
C) detect low-resistance silicon material: no matter the silicon material is P type or N type when as long as the silicon material is low-resistance, because the low very low approximate lead of resistance material resistance, the former current signal that goes out from three probe measurements is through the rectification of rectifier bridge D2 rectifying block, then through three terminal regulator 7805 (U2 among Fig. 1) voltage stabilizing output 5vdc, thereby driving buzzer call, long bright through the demonstration low-resistance silicon material light emitting diode of lighting behind the current-limiting resistance R2 on the J6 of connectivity port 3 simultaneously, prompting also is shown as low-resistance silicon material, and seven segment digital tubes 2 or 4 shows the P/N type of silicon material simultaneously.
2, resistivity detects
2.1 present embodiment resistivity measurement principle is: four metal probes of arranging in a line (interval of four pins must guarantee) vertically are pressed on the tested standard silicon sample table plane (thickness is smaller or equal to 4mm) with certain pressure, between 1 and 4 probes, pass to electric current I (mA), through silicon print surface just produced certain voltage (mV) between 2 and 3 probes this moment, it is different according to the overall dimensions of metering system and standard model to measure this voltage, adjust to the measuring resistance rate score that adapts, carry out measurement successively after the calibration the resistivity size of silicon materials.
2.2, during greater than the sheet material of 4mm, carry out the correction of resistivity at test silico briquette material thickness≤4mm, thin layer sheet stock and bar or thickness according to the kind difference of silicon material.Modification method is:
When the test silicon material, the potentiometer 7 of adjusting instrument panel front (the resistivity calibration potentiometer R among Fig. 1) and consistent with the resistivity of standard sample with the standard sample calibration carries out the test silicon raw material, numerical value * 0.95 that actual value=test shows then earlier;
The circuit analysis process that silicon material resistivity detects:
The four point probe that is plugged on (J5 among Fig. 1 is the four point probe interface) on the four point probe aviation plug 13 of arranging in a line vertically is pressed on the standard silicon monocrystalline sample piece surface with certain pressure, between 1 and No. 4 probe, passes to 24V DC voltage (this power supply is provided by 7824 voltage stabilizer U5 among Fig. 1) this moment; Because standard silicon material sample piece has the constant resistivity value of standard, the direct current signal that must calibrate between 1 and 4 probes before measuring silicon material to be measured is promptly adjusted the resistivity value consistent with the standard silico briquette; Calibrating 1 and No. 4 direct current signal between probe and be by adjustable potentiometer among Fig. 47 is that the calibration constant-current circuit that adjustable potentiometer R (20K) among Fig. 1 and stabilivolt D5 form is finished, the flow through base stage of triode Q1 of the current signal that constant current goes out, thereby driving triode Q1 conducting and electric current amplifies, because base current is constant, then the collector current signal is constant, this current signal is by the emitter of triode Q1, return stabilivolt U5 through current-limiting resistance R6, the negative pole of stabilivolt U5 is communicated with the GND earth terminal of voltage stabilizer U5, form current return, and guarantee that 1 and No. 4 current signal between the probe is stable; The current signal that promptly is added in silicon material surface is stable, it is bright that this moment, four point probe on the J4 of connectivity port well contacted the pilot lamp 6 of silicon material, behind the good contact measurement in silicon material surface, produce stable pulse voltage signal (mV) between 2 and 3 probes then, the flow through signal input part 1 of digital voltmeter (the J10 position, connectivity port among Fig. 1) of this pulse voltage signal, 2 places (on the connectivity port J10 among Fig. 1), digital voltmeter 1 carries out the A/D conversion with the voltage signal of measuring then, and the numerical value that demonstrates is the resistivity size of silicon material.
Claims (7)
1. multifunctional tester of measuring semiconductor silicon material P/N type and resistivity, comprise multichannel output control transformer, rectification circuit, mu balanced circuit, it is characterized in that also comprising monocrystalline silicon P/N type probe joint detection port and monocrystalline silicon resistivity probe joint detection port, monocrystalline silicon P/N type probe joint detection port is connected with an output terminal of multichannel output control transformer, this probe joint detection port also with rectification circuit, filtering circuit connects, connect an operational amplifier again, operational amplifier drives with the charactron that can show monocrystalline silicon P/N type by NPN or positive-negative-positive triode respectively and is connected; Monocrystalline silicon resistivity probe joint detection port is connected with rectification circuit, filtering, constant current voltage stabilizing circuit, and rectification circuit is connected with an output terminal of multichannel output control transformer, and resistivity probe in detecting port also is connected with the digital voltmeter that shows resistivity.
2. the multifunctional tester of measurement semiconductor silicon material P/N type according to claim 1 and resistivity is characterized in that multichannel output control transformer has three road output terminals.
3. the multifunctional tester of measurement semiconductor silicon material P/N type according to claim 1 and 2 and resistivity is characterized in that digital voltmeter is connected by the output terminal of regulator rectifier circuit with multichannel output control transformer.
4. the multifunctional tester of measurement semiconductor silicon material P/N type according to claim 3 and resistivity, the joint detection port (J7) that it is characterized in that monocrystalline silicon P/N type probe is three probe joint detection ports, adopt three probe aviation plugs (12), three probes of can pegging graft; The joint detection port (J5) of resistivity probe is a four point probe joint detection port, adopts four point probe aviation plug (13), the Four probing pin probe of can pegging graft.
5. the multifunctional tester of measurement semiconductor silicon material P/N type according to claim 4 and resistivity, it is characterized in that three probe joint detection ports are connected with a rectification circuit, the current signal that three probe measurements go out is connected with hummer LS through rectifier bridge (D2) rectification, the rectifier bridge of rectification circuit and after a voltage stabilizer is connected again, the voltage stabilizer while also connects the charactron that can show monocrystalline silicon P/N type, forms and detects P/N type and low-resistance silicon material buzz circuit.
6.B the multifunctional tester of measurement semiconductor silicon material P/N type according to claim 5 and resistivity, it is characterized in that control transformer three tunnel control output end (T1, T2, T3) be respectively: exchange a route control output end (T1) and output to the rectification circuit that rectifier bridge D3 and D4 by two parallel connections form, the rectifier bridge of two parallel connections is connected with three terminal regulator respectively, three terminal regulator (U4) the one end that is connected with rectifier bridge D3 is connected with the joint detection port (J7) of three probes by filtering circuit, this three terminal regulator other end is connected with operational amplifier, and operational amplifier drives with the charactron that can show monocrystalline silicon P/N type with the positive-negative-positive triode through NPN respectively and is connected; The output terminal of the three terminal regulator (U5) that is connected with rectifier bridge (D4) provides power supply for the four point probe that is connected on the port (J5); Exchange two tunnel, three route control output ends (T2, T3) output, give two rectification circuit power supplies that are made of rectifier bridge (D1, D2) successively, rectifier bridge D1 and three terminal regulator (U1) are connected to connectivity port (J10) power supply of digital voltmeter; It is the connectivity port (J6) and hummer (LS) power supply of 2 seven segment digital tubes simultaneously that rectifier bridge D2 is connected with three terminal regulator (U2).
7. the multifunctional tester of measurement semiconductor silicon material P/N type according to claim 6 and resistivity is characterized in that described constant current voltage stabilizing circuit calibrates potentiometer (R) by resistivity and be connected the back with triode (Q1) and form with the output terminal that stabilivolt (D5) is connected in parallel on three terminal regulator (U5).
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200720127466 CN201096867Y (en) | 2007-08-15 | 2007-08-15 | Multi-function tester for measuring semiconductor silicon material P/N and resistance rate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200720127466 CN201096867Y (en) | 2007-08-15 | 2007-08-15 | Multi-function tester for measuring semiconductor silicon material P/N and resistance rate |
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Cited By (10)
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| CN101852827B (en) * | 2009-03-30 | 2013-03-06 | 罗荣土 | Silicon material resistivity voice test pen |
| CN105259417A (en) * | 2014-07-14 | 2016-01-20 | 新特能源股份有限公司 | Detection apparatus of silicon core resistivity |
| CN106020312A (en) * | 2016-07-20 | 2016-10-12 | 浙江工业大学 | Constant current source for earth magnetic field compensation in cold atom interference type gravity meter |
| CN106370931A (en) * | 2016-11-14 | 2017-02-01 | 山东辰宇稀有材料科技有限公司 | Silicon material distributing and segregation device and method |
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| CN106645968A (en) * | 2017-02-17 | 2017-05-10 | 山东辰宇稀有材料科技有限公司 | Portable measurement device capable of displaying silicon material resistivity and PN type and application method thereof |
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| CN109643669A (en) * | 2016-08-25 | 2019-04-16 | 信越半导体株式会社 | The manufacturing method of resistivity master sample and the determination of resistivity method of epitaxy wafer |
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| CN105259417B (en) * | 2014-07-14 | 2018-04-24 | 新特能源股份有限公司 | A kind of detection device of silicon core resistivity |
| CN105259417A (en) * | 2014-07-14 | 2016-01-20 | 新特能源股份有限公司 | Detection apparatus of silicon core resistivity |
| CN106020312A (en) * | 2016-07-20 | 2016-10-12 | 浙江工业大学 | Constant current source for earth magnetic field compensation in cold atom interference type gravity meter |
| CN109643669B (en) * | 2016-08-25 | 2023-05-02 | 信越半导体株式会社 | Method for manufacturing resistivity standard sample and method for measuring resistivity of epitaxial wafer |
| CN109643669A (en) * | 2016-08-25 | 2019-04-16 | 信越半导体株式会社 | The manufacturing method of resistivity master sample and the determination of resistivity method of epitaxy wafer |
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| CN106405247A (en) * | 2016-10-14 | 2017-02-15 | 山东辰宇稀有材料科技有限公司 | Portable silicon material resistivity measurement device |
| CN106405247B (en) * | 2016-10-14 | 2023-10-20 | 山东辰宇稀有材料科技有限公司 | Portable silicon material resistivity measuring device |
| CN106370931A (en) * | 2016-11-14 | 2017-02-01 | 山东辰宇稀有材料科技有限公司 | Silicon material distributing and segregation device and method |
| CN106370931B (en) * | 2016-11-14 | 2023-06-23 | 山东辰宇稀有材料科技有限公司 | Silicon material batching and segregation device and method |
| CN106645968A (en) * | 2017-02-17 | 2017-05-10 | 山东辰宇稀有材料科技有限公司 | Portable measurement device capable of displaying silicon material resistivity and PN type and application method thereof |
| CN106645968B (en) * | 2017-02-17 | 2024-02-06 | 山东辰宇稀有材料科技有限公司 | Portable measuring device capable of displaying resistivity and PN type of silicon material and use method |
| CN108807234A (en) * | 2018-06-22 | 2018-11-13 | 安徽舟港新能源科技有限公司 | A kind of silicon materials quick sorting method based on silicon materials tester |
| CN113109625A (en) * | 2021-04-07 | 2021-07-13 | 上海新昇半导体科技有限公司 | Method for judging conductive type of silicon wafer |
| CN113125854A (en) * | 2021-04-07 | 2021-07-16 | 上海新昇半导体科技有限公司 | Method for judging conductive type of silicon wafer |
| CN113125854B (en) * | 2021-04-07 | 2024-05-17 | 上海新昇半导体科技有限公司 | Method for judging conductivity type of silicon wafer |
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