CN106370931B - Silicon material batching and segregation device and method - Google Patents
Silicon material batching and segregation device and method Download PDFInfo
- Publication number
- CN106370931B CN106370931B CN201610998871.6A CN201610998871A CN106370931B CN 106370931 B CN106370931 B CN 106370931B CN 201610998871 A CN201610998871 A CN 201610998871A CN 106370931 B CN106370931 B CN 106370931B
- Authority
- CN
- China
- Prior art keywords
- module
- silicon material
- segregation
- batching
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a silicon material batching and segregation device and method, which adopts a box-type shell, and comprises a square box shell, a liquid crystal display screen, an integrated circuit board, a USB jack, a probe jack, four probe probes, a batching key, a segregation key, a film keyboard and a battery box; the integrated circuit board comprises a singlechip, a clock signal module, a watchdog module, a liquid crystal display module, a BOOT state switch circuit, a key input module, a storage module, a USB programming module, an analog-to-digital conversion module, a voltage stabilizing circuit module, a reference voltage source, a power supply module, a constant current source module and a probe circuit module; adopting a tungsten steel needle with the diameter of 0.5mm and a copper wire with the diameter of 1.5 mm; the utility model has the functions of calculating the resistance and the resistivity of the silicon material, PN type, batching and segregation, and can utilize the resistivity and PN type of the silicon material to prepare a novel silicon ingot or segregation of the known silicon ingot to obtain the resistivity, PN type coefficient, weight and dopant concentration of the silicon ingot.
Description
Technical Field
The utility model relates to the technical field of silicon material detection, in particular to a silicon material batching and segregation device and method.
Background
Currently, in the prior art, silicon materials include P-type silicon materials, N-type silicon materials, and heavily doped silicon materials with low resistivity, and the conductivity type and resistivity of these silicon materials must be strictly controlled to reuse these finely divided silicon materials as raw materials for polysilicon ingot casting or single crystal pulling. The batching of the silicon material refers to accurately proportioning the silicon material to be obtained, namely, different silicon materials are input, batching parameters are output, and the batching parameters can also be input, so that different silicon materials are output. The segregation of the silicon material refers to a material containing impurities, after melting and then slowly solidifying, the impurity concentration of each part in the solid is different, the original impurity distribution is uniform, after melting and solidifying, the impurity distribution is not uniform, and some places have more impurities and some places have less impurities, so that the effect of separating the impurities is obtained. Because the segregation phenomenon is an effect produced by the phase balance characteristics of a binary system or a multiple system, the components in the solid-liquid two phases are unequal when the binary system is in a solid-liquid two-phase balance state, for example: in silicon and germanium containing impurities, the impurity concentration of the solid phase at equilibrium is different from that of the liquid phase.
Regarding test equipment and instruments for detecting the resistivity and conductivity type of a semiconductor silicon material, related documents report that, as disclosed in China patent No. CN201311457, a silicon material resistivity detection device disclosed by the utility model comprises a voltmeter and an ammeter, wherein the voltmeter is connected with an aviation socket, the aviation socket is also connected with the ammeter, the ammeter is connected with a collector of an amplifier, an emitter of the amplifier is connected with a fixed resistor and a light emitting diode, the base of the amplifier is connected with a sliding rheostat, the sliding rheostat is also connected with a power supply, the amplifier adopts a three-stage amplifier 9013, and the power supply is a 45V constant current source.
The utility model discloses a silicon material resistivity voice test pen, which consists of a probe (1342 four-probe arrangement sequence), an electronic circuit part and a voice playing part; the utility model adopts the measuring/thickness correcting (change-over switch), so the utility model can carry out debugging and setting according to the specific thickness of the silicon material during the test, adopts the integrated operational amplifier circuit chip MAX4166 to have a low-voltage closing mode, is powered by a dry battery, has high safety coefficient, can carry out real-time voice reporting on the measured resistivity value, and has the advantages of simple manufacture, low cost and the like.
Although the silicon material resistivity detection device and the silicon material resistivity voice test pen can solve the problem of silicon material resistivity detection, the following problems and disadvantages exist in the technical and equipment aspects of measuring silicon material PN and heavily doped silicon materials:
(1) The disclosed patent silicon material resistivity detection device and the silicon material resistivity voice test pen have no batching and segregation functions of the silicon material, cannot test PN and heavily doped silicon materials, and can only test resistivity. (2) The existing equipment for measuring PN type of silicon materials, which is commonly used in the market at present, belongs to desk type equipment, 220V alternating current power supply is adopted, circuit layout is unreasonable, a circuit board is not integrated enough, the size is overlarge, the equipment is not easy to carry, the use is inconvenient, the power consumption is larger, and safety problems exist.
Based on this, there is a need to provide a portable device and method for mixing and segregation of silicon materials and testing resistivity.
Disclosure of Invention
The utility model aims to integrate the measuring device which is oversized and is not easy to carry and is used for measuring the resistivity and PN type of the silicon material into handheld portable equipment, meanwhile, the batching and segregation functions are added, and a batching and segregation method is provided for a user, so that the resistivity and PN type of the silicon material can be used for batching a novel silicon ingot more efficiently, or the known silicon ingot is subjected to segregation, the resistivity and PN type of the silicon material are measured, and the operation is safer and lower in consumption.
The utility model aims to solve the technical problems of a method for realizing batching and segregation functions, high integration of a circuit board, measurement of resistivity of a silicon material, PN type measurement of the silicon material and heavily doped type measurement of the silicon material.
The technical scheme for solving the technical problems is as follows: the silicon material batching and condensing device comprises a square box shell, a liquid crystal display screen, an integrated circuit board, a USB jack, a probe jack, four probe probes, a batching key, a condensing key, a film keyboard and a battery box, and is characterized in that: the square box shell is cuboid, a liquid crystal display screen is arranged in the middle of the upper surface of the square box shell, a thin film keyboard is arranged on the periphery of the liquid crystal display screen, and the thin film keyboard comprises a batching key and a segregation key; the side surface of one end of the square box shell is provided with a USB jack and a probe jack in parallel; the probe jack is connected with four probe probes through a wire; an integrated circuit board and a battery box are arranged in the square box shell, the battery box is arranged on one side of the integrated circuit board, and the integrated circuit board is electrically connected with the liquid crystal display screen, the USB jack, the probe jack, the thin film keyboard and the battery box; and a lithium battery is arranged in the battery box.
The utility model relates to a silicon material batching and segregation device which is characterized in that an integrated circuit board comprises a singlechip, a clock signal module, a watchdog module, a liquid crystal display module, a BOOT state switch circuit, a key input module, a storage module, a USB programming module, an analog-to-digital conversion module, a voltage stabilizing circuit module, a reference voltage source, a power supply module, a constant current source module and a probe circuit module; the singlechip is electrically connected with the clock signal module, the watchdog module, the liquid crystal display module, the BOOT state switch circuit, the key input module, the storage module, the USB programming module and the analog-to-digital conversion module; the power supply module is electrically connected with the voltage stabilizing circuit module and the reference voltage source; the probe circuit module is sequentially connected with the constant current source module and the analog-to-digital conversion module; the reference voltage source is connected with the analog-to-digital conversion module; the voltage stabilizing circuit module is connected with the constant current source module; the key input module is electrically connected with the film keyboard; the liquid crystal display module is electrically connected with the liquid crystal display screen; the USB programming module and the power module are electrically connected with the USB jack; the probe circuit module is electrically connected with the probe jack; the power module is electrically connected with the battery box.
The silicon material batching and segregation device is characterized in that the metal probes of the four-probe are tungsten steel needles with the diameter of 0.5 mm.
The silicon material batching and segregation device is characterized in that a metal probe of the four-probe and a probe jack connection cable adopt copper wires with the diameter of 1.5 mm.
The silicon material batching and segregation device is characterized in that a lithium battery charged through a USB jack is arranged in the battery box.
The silicon material batching and segregation device is characterized in that a singlechip of the integrated circuit board is internally provided with a silicon material batching and segregation program led in through a USB jack.
The utility model relates to a silicon material batching method, which is characterized by comprising the following steps of:
step 1: starting a silicon material batching and segregation device, and clicking a batching key (7) to enter a batching operation interface;
step 2: judging whether the probe contacts the silicon material, if so, collecting voltage, otherwise, manually inputting required parameters;
step 3: the silicon material batching and segregation device calculates the resistivity by using a silicon material batching calculation program;
step 4: obtaining a batching table and displaying data on a liquid crystal display screen;
step 5: judging whether the record key is pressed, if so, recording the stored data, otherwise, returning to display.
The utility model relates to a silicon material segregation method, which is characterized by comprising the following steps of:
step 1: starting a silicon material batching and segregation device, and clicking a segregation key (8) to enter a segregation operation interface;
step 2: judging whether parameters are manually input, if so, inputting the required parameters, otherwise, returning to the batching operation interface;
step 3: the silicon material batching and segregation device performs segregation calculation by utilizing a silicon material segregation calculation program;
step 4: obtaining a segregation table and displaying data on a liquid crystal display screen;
step 5: judging whether the record key is pressed, if so, recording the stored data, otherwise, returning to display.
The utility model relates to a silicon material batching and segregation method which is characterized by being implemented by programming integrated circuit boards, single chip microcomputer, USB jacks, USB connecting wires and single chip microcomputer programming software.
Compared with the prior art, the utility model has the beneficial effects that: the utility model adopts high-precision AD, a tungsten steel needle with the diameter of 0.5mm and a copper wire with the diameter of 1.5 mm; the silicon ingot material preparation method has the functions of calculating the resistance and the resistivity of the silicon material, batching and segregation, can automatically calculate the resistance, the resistivity and PN type, simultaneously make statistics of data, and more efficiently utilizes the resistivity and PN type of the silicon material to batching a novel silicon ingot, or performs segregation on a known silicon ingot to obtain the resistivity, PN type coefficient, weight and dopant concentration of the silicon ingot, and displays the result on a liquid crystal display screen, so that the operation is safer and the consumption is lower.
Drawings
Fig. 1 is a schematic structural view of the present utility model.
Fig. 2 is a schematic diagram of a circuit module structure according to the present utility model.
FIG. 3 is a flow chart of the dosing function of the present utility model.
FIG. 4 is a flow chart of the partial condensation function procedure of the present utility model.
FIG. 5 is a graph showing the resistivity profile of a silicon ingot after doping with a master alloy according to the present utility model.
In fig. 1: 1. the square box comprises a square box shell, a liquid crystal display screen, an integrated circuit board, a 4.USB jack, a 5.probe jack, a 6.four-probe, a 7.batching key, a 8.segregation key, a 9.film keyboard and a 10.battery box.
Detailed Description
The utility model will be described in further detail with reference to fig. 1, 2, 3, 4, 5 and examples, so that the public can better understand the implementation method of the utility model, and specific embodiments of the utility model are as follows:
as shown in fig. 1, the silicon material batching and condensing device comprises a square box shell 1, a liquid crystal display screen 2, an integrated circuit board 3, a USB jack 4, a probe jack 5, a four-probe 6, batching keys 7, condensing keys 8, a film keyboard 9 and a battery box 10, and is characterized in that the square box shell 1 is cuboid, the liquid crystal display screen 2 is arranged in the middle of the upper surface of the square box shell, the film keyboard 9 is arranged on the periphery of the liquid crystal display screen 2, and the film keyboard 9 comprises batching keys 7 and condensing keys 8; a USB jack 4 and a probe jack 5 are arranged on one end side surface of the square box shell 1 in parallel; the probe jack 5 is connected with the four probe probes 6 through wires; an integrated circuit board 3 and a battery box 10 are arranged in the square box shell 1, the battery box 10 is arranged on one side of the integrated circuit board 3, and the integrated circuit board 3 is electrically connected with the liquid crystal display 2, the USB jack 4, the probe jack 5, the membrane keyboard 9 and the battery box 10; the battery case 10 is internally provided with a lithium battery.
As shown in fig. 1 and fig. 2, the silicon material batching and segregation device of the utility model is characterized in that the integrated circuit board 3 comprises a singlechip, a clock signal module, a watchdog module, a liquid crystal display module, a BOOT state switch circuit, a key input module, a storage module, a USB programming module, an analog-to-digital conversion module, a voltage stabilizing circuit module, a reference voltage source, a power supply module, a constant current source module and a probe circuit module; the singlechip is electrically connected with the clock signal module, the watchdog module, the liquid crystal display module, the BOOT state switch circuit, the key input module, the storage module, the USB programming module and the analog-to-digital conversion module; the power supply module is electrically connected with the voltage stabilizing circuit module and the reference voltage source; the probe circuit module is sequentially connected with the constant current source module and the analog-to-digital conversion module; the reference voltage source is connected with the analog-to-digital conversion module; the voltage stabilizing circuit module is connected with the constant current source module; the key input module is electrically connected with the film keyboard 9; the liquid crystal display module is electrically connected with the liquid crystal display screen 2; the USB programming module and the power module are electrically connected with the USB jack 4; the probe circuit module is electrically connected with the probe jack 5; the power module is electrically connected with the battery case 10.
As shown in fig. 2, the silicon material ingredient segregation device is characterized in that the key input module is electrically connected with a film key 7; the liquid crystal display module is electrically connected with the liquid crystal display screen 2; the USB programming module and the power module are electrically connected with the USB jack 4; the probe circuit module is electrically connected to the probe jack 5.
As shown in FIG. 1, the silicon material batching and segregation device is characterized in that the metal probe of the four-probe 6 adopts a tungsten steel needle with the diameter of 0.5 mm.
As shown in FIG. 1, the silicon material batching and segregation device is characterized in that a cable for connecting a metal probe of the four-probe 6 with a probe jack 5 adopts a copper wire with the diameter of 1.5 mm.
As shown in fig. 1, the silicon material batching and segregation device of the present utility model is characterized in that a lithium battery charged through a USB jack 4 is disposed inside the battery case 10.
As shown in fig. 1 and 2, the silicon material batching and segregation device of the present utility model is characterized in that a silicon material batching and segregation calculation program led in through a USB jack 4 is stored in a single chip microcomputer memory of an integrated circuit board 3, and is implemented through programming of the integrated circuit board 3, the single chip microcomputer, the USB jack 4, a USB connection wire and single chip microcomputer programming software.
Example 1
As shown in fig. 1 and 3, a silicon material batching method of the silicon material batching and segregation device of the present utility model is characterized in that the silicon material batching method comprises the following steps:
step 1: starting a silicon material batching and condensing device, and clicking a batching key 7 to enter a batching operation interface;
step 2: judging whether the probe contacts the silicon material, if so, collecting voltage, otherwise, manually inputting required parameters;
step 3: the silicon material batching and segregation device calculates the resistivity by using a silicon material batching calculation program;
step 4: obtaining a batching table and displaying data on the liquid crystal display screen 2;
step 5: judging whether the record key is pressed, if so, recording the stored data, otherwise, returning to display.
The utility model relates to a silicon material batching and segregation device, which comprises the following specific steps of an algorithm according to a silicon material batching and calculation program:
1) Determining output quantity: doping concentration in the bottom crystal
Resistivity in undoped length (atm os)>
(Ω. cm), weight of the ingot in length +.>
(kg), top coat weight over Length->
(kg), N-type dopant concentration->
(atmos/cm²)；
2) Determining an input quantity: the weight of the furnace burden of the first ingot is A (kg), the target resistivity P type of the bottom of the ingot is B (Ω & cm), the resistivity of the dopant to be added is C (Ω & cm), the inner side length of the silicon ingot is D (mm), the inner side height of the silicon ingot is E (mm), the concentration of raw material oxygen is F (atm/cm), and the number of N-type dopant atoms is equal to that of the silicon ingot
Total weight of the feed>
(kg)；
3) The output was calculated using the following formula:
(3.1) doping concentration in the bottom Crystal
Units (atm): />
(3.2) weight of silicon ingot over length
：/>
(3.3) Top coat weight over Length
：/>
4) Resistivity over undoped length
：
(4.1) calculation
：
(4.2) if
Then->
；
(4.3) if
，/>
；
(4.4) if
Then->
5) N-type dopant concentration
:/>
Example 2
As shown in fig. 1 and 4, the method for segregating and solidifying a silicon material of the silicon material batching and segregating device is characterized by comprising the following steps:
step 1: starting a silicon material batching and segregation device, and clicking a segregation key 8 to enter a segregation operation interface;
step 2: judging whether parameters are manually input, if so, inputting the required parameters, otherwise, returning to the batching operation interface;
step 3: the silicon material batching and segregation device performs segregation calculation by utilizing a silicon material segregation calculation program;
step 4: obtaining a segregation table and displaying data on the liquid crystal display screen 2;
step 5: judging whether the record key is pressed, if so, recording the stored data, otherwise, returning to display.
The utility model relates to a silicon material segregation method of a silicon material batching and segregation device, which comprises the following specific steps of an algorithm according to a silicon material segregation calculation program:
1) Determining output quantity: predicted resistivity of N-type material
(Ω. Cm), predicted P-type material resistivity +.>
(Ω. cm), weight of N-type material->
(kg), weight of P-type material>
(kg), P-type coefficient->
N-type coefficient->
Concentration of P-type dopant in silicon material>
(atm s/cm. Sup.), N-type dopant concentration in the silicon material +.>
(atm s/cm. Sup.), weight of silicon ingot over length +.>
(kg)；
2) Determining an input quantity: the average side length A (mm) of the silicon ingot, the charging quantity B (kg) of the furnace, the bottom polar type X (N/P), the bottom resistivity C (omega. Cm), the length D (mm) of a section of the silicon ingot, the polar type Y (N/P) of the length and the resistivity E (omega. Cm) of the length;
3) The output was calculated using the following formula:
(3.1) resistivity of N-type material
(Ω•cm)：
First of all, require
、/>
、/>
、/>
、/>
Then ask for +.>
Then ask for->
；
(3.1.1) knowing the bottom resistivity of the input to be C and the bottom polarity to be P, then
：
When the charged material is the bottom polarity P (when X is P):
when the charged material is of bottom polarity N (when X is N):
(3.1.2) solving
：
Polar y=p when in length:
polar y=n in length:
outputting 0 if the output Y is not P or N;
(3.1.3) solving
：
(3.1.4) determination
：
(3.1.5) solving
：
(3.1.6) determination
：
(3.2) expected resistivity of the P-type material
:
To desire
The +.>
；
(3.2.1) solving
：
When the bottom polarity is P-type:
when the bottom polarity is N-type:
(3.2.2) solving for
:
When the bottom polarity is P-type:
when the bottom polarity is N-type:
(3.3) weight of P-type Material
：
(3.4) weight of N-type Material
:
(3.5) P-type coefficient
:
(3.6) N-type coefficient
:
(3.7) concentration of P-type dopant in silicon Material
：
(3.8) N-type dopant concentration in silicon Material
：
(3.9) weight of silicon ingot over length
:
Example 3
As shown in fig. 5, when the batching operation is performed, different silicon ingot materials are fed into the furnace, such as:
silicon ingot one: boron doping concentration n=
atm s/cm, resistivity ρ=2Ω·cm;
and a second silicon ingot: phosphorus doping concentration n=
atm s/cm, resistivity ρ=0.07 Ω·cm;
when doping, the resistivity is the same and the concentration ratio of the P-type dopant to the N-type dopant is
0.051370261 ：2.70632183；
The resistivity test results of P-type silicon ingots of different lengths are as follows:
| length (mm) | Resistivity (Ω. Cm) |
| 0 | 2.231324057 |
| 20 | 2.198532243 |
| 40 | 2.164066922 |
| 60 | 2.127714208 |
| 80 | 2.089213833 |
| 100 | 2.048244253 |
| 120 | 2.004401107 |
| 140 | 1.957165078 |
| 160 | 1.905852116 |
Compared with the prior art, the utility model has the beneficial effects that: the utility model adopts high-precision AD, a tungsten steel needle with the diameter of 0.5mm and a copper wire with the diameter of 1.5 mm; the utility model has the functions of calculating the resistance and the resistivity of the silicon material, batching and segregation, can automatically calculate the resistance, the resistivity and the PN type, simultaneously count data, more efficiently utilize the resistivity and the PN type of the silicon material to batching novel silicon ingots, or segregation known silicon ingots to obtain the resistivity, the PN type coefficient, the weight and the dopant concentration of the silicon ingots, and display the result on a liquid crystal display screen, thereby ensuring safer operation and lower consumption.
The foregoing description of the preferred embodiments of the utility model is not intended to limit the utility model to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the utility model are intended to be included within the scope of the utility model.
Claims (8)
1. The utility model provides a silicon material batching divides congeal device, includes square box casing (1), liquid crystal display (2), integrated circuit board (3), USB jack (4), probe jack (5), four probe probes (6), batching button (7), divide congeals button (8), membrane keyboard (9), battery case (10), its characterized in that: the square box shell (1) is cuboid, a liquid crystal display screen (2) is arranged in the middle of the upper surface of the square box shell, a thin film keyboard (9) is arranged on the periphery of the liquid crystal display screen (2), and USB jacks (4) and probe jacks (5) are arranged on the side face of one end of the square box shell (1) in parallel; the probe jack (5) is connected with four probe probes (6) through wires; an integrated circuit board (3) and a battery box (10) are arranged in the square box shell (1), the battery box (10) is arranged on one side of the integrated circuit board (3), and the integrated circuit board (3) is electrically connected with the liquid crystal display screen (2), the USB jack (4), the probe jack (5), the film keyboard (9) and the battery box (10); and a lithium battery is arranged in the battery box (10).
2. The silicon material batch segregation apparatus of claim 1, wherein: the integrated circuit board (3) comprises a singlechip, a clock signal module, a watchdog module, a liquid crystal display module, a BOOT state switch circuit, a key input module, a storage module, a USB programming module, an analog-to-digital conversion module, a voltage stabilizing circuit module, a reference voltage source, a power supply module, a constant current source module and a probe circuit module; the singlechip is electrically connected with the clock signal module, the watchdog module, the liquid crystal display module, the BOOT state switch circuit, the key input module, the storage module, the USB programming module and the analog-to-digital conversion module; the power supply module is electrically connected with the voltage stabilizing circuit module and the reference voltage source; the probe circuit module is sequentially connected with the constant current source module and the analog-to-digital conversion module; the reference voltage source is connected with the analog-to-digital conversion module; the voltage stabilizing circuit module is connected with the constant current source module; the key input module is electrically connected with the film keyboard (9); the liquid crystal display module is electrically connected with the liquid crystal display screen (2); the USB programming module and the power module are electrically connected with the USB jack (4); the probe circuit module is electrically connected with the probe jack (5); the power module is electrically connected with the battery box (10).
3. The silicon material batch segregation apparatus of claim 1, wherein: the metal probe of the four-probe (6) adopts a tungsten steel needle with the diameter of 0.5 mm.
4. A silicon material batch segregation apparatus according to claim 3, wherein: and a cable for connecting the metal probes of the four-probe (6) with the probe jack (5) adopts a copper wire with the diameter of 1.5 mm.
5. The silicon material batch segregation apparatus of claim 1, wherein: the battery box (10) is internally provided with a lithium battery which is charged through the USB jack (4).
6. The silicon material batch segregation apparatus of claim 2, wherein: the singlechip of the integrated circuit board (3) is internally provided with a silicon material batching and segregation program led in through the USB jack (4).
7. A silicon material batching method, adopting the silicon material batching segregation device according to any one of claims 1 to 6, characterized in that: the silicon material batching method comprises the following steps:
step 1: starting a silicon material batching and segregation device, and clicking a batching key (7) to enter a batching operation interface;
step 2: judging whether the probe contacts the silicon material, if so, collecting voltage, otherwise, manually inputting required parameters;
step 3: the silicon material batching and segregation device calculates the resistivity by using a silicon material batching calculation program;
step 4: obtaining a batching table and displaying data on a liquid crystal display screen (2);
step 5: judging whether the record key is pressed, if so, recording the stored data, otherwise, returning to display.
8. A method for segregation of silicon materials, which adopts the silicon material batching segregation device as claimed in any one of claims 1 to 6, and is characterized in that: the silicon material segregation method comprises the following steps:
step 1: starting a silicon material batching and segregation device, and clicking a segregation key (8) to enter a segregation operation interface;
step 2: judging whether parameters are manually input, if so, inputting the required parameters, otherwise, returning to the batching operation interface;
step 3: the silicon material batching and segregation device performs segregation calculation by utilizing a silicon material segregation calculation program;
step 4: obtaining a segregation table and displaying data on a liquid crystal display screen (2);
step 5: judging whether the record key is pressed, if so, recording the stored data, otherwise, returning to display.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998871.6A CN106370931B (en) | 2016-11-14 | 2016-11-14 | Silicon material batching and segregation device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998871.6A CN106370931B (en) | 2016-11-14 | 2016-11-14 | Silicon material batching and segregation device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106370931A CN106370931A (en) | 2017-02-01 |
| CN106370931B true CN106370931B (en) | 2023-06-23 |
Family
ID=57894591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610998871.6A Active CN106370931B (en) | 2016-11-14 | 2016-11-14 | Silicon material batching and segregation device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106370931B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109267149A (en) * | 2018-11-29 | 2019-01-25 | 内蒙古中环光伏材料有限公司 | A kind of silica crucible and the method for controlling barium carbonate dosage |
| CN116913717B (en) * | 2023-09-13 | 2023-11-28 | 合肥联宝信息技术有限公司 | Film keyboard |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002067205A (en) * | 2000-08-28 | 2002-03-05 | Unitica Fibers Ltd | Moisture permeable waterproof laminate cloth having excellent antidewing properties |
| CN1620208A (en) * | 2003-11-21 | 2005-05-25 | 株式会社半导体能源研究所 | Display device |
| CN201096867Y (en) * | 2007-08-15 | 2008-08-06 | 新疆新能源股份有限公司 | Multi-function tester for measuring semiconductor silicon material P/N and resistance rate |
| CN101806837A (en) * | 2010-04-14 | 2010-08-18 | 高佳太阳能股份有限公司 | Method for carrying out testing and grading on resistivity of semiconductor heavily-doped silicon slice |
| CN101845667A (en) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | Method for producing high-resistivity monocrystalline silicon |
| JP2011044674A (en) * | 2009-08-24 | 2011-03-03 | Mitsubishi Materials Corp | Semiconductor device, method for manufacturing the same, and sputtering target used in the method |
| CN202018493U (en) * | 2010-11-10 | 2011-10-26 | 江西赛维Ldk太阳能高科技有限公司 | Tweezers type testing device for conduction types of silicon materials |
| DE102011012552A1 (en) * | 2011-02-24 | 2012-08-30 | Schott Ag | Lithium-ion battery |
| CN104866148A (en) * | 2014-02-21 | 2015-08-26 | 株式会社和冠 | Signal processing circuit, signal processing method, position detector, and electronic device |
| CN206147010U (en) * | 2016-11-14 | 2017-05-03 | 山东辰宇稀有材料科技有限公司 | Silicon materials batching segregation device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
-
2016
- 2016-11-14 CN CN201610998871.6A patent/CN106370931B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002067205A (en) * | 2000-08-28 | 2002-03-05 | Unitica Fibers Ltd | Moisture permeable waterproof laminate cloth having excellent antidewing properties |
| CN1620208A (en) * | 2003-11-21 | 2005-05-25 | 株式会社半导体能源研究所 | Display device |
| CN201096867Y (en) * | 2007-08-15 | 2008-08-06 | 新疆新能源股份有限公司 | Multi-function tester for measuring semiconductor silicon material P/N and resistance rate |
| JP2011044674A (en) * | 2009-08-24 | 2011-03-03 | Mitsubishi Materials Corp | Semiconductor device, method for manufacturing the same, and sputtering target used in the method |
| CN101806837A (en) * | 2010-04-14 | 2010-08-18 | 高佳太阳能股份有限公司 | Method for carrying out testing and grading on resistivity of semiconductor heavily-doped silicon slice |
| CN101845667A (en) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | Method for producing high-resistivity monocrystalline silicon |
| CN202018493U (en) * | 2010-11-10 | 2011-10-26 | 江西赛维Ldk太阳能高科技有限公司 | Tweezers type testing device for conduction types of silicon materials |
| DE102011012552A1 (en) * | 2011-02-24 | 2012-08-30 | Schott Ag | Lithium-ion battery |
| CN104866148A (en) * | 2014-02-21 | 2015-08-26 | 株式会社和冠 | Signal processing circuit, signal processing method, position detector, and electronic device |
| CN206147010U (en) * | 2016-11-14 | 2017-05-03 | 山东辰宇稀有材料科技有限公司 | Silicon materials batching segregation device |
Non-Patent Citations (1)
| Title |
|---|
| 真空区熔提纯在探测器级硅单晶生长中的作用;索开南 等;《天津科技》;20101231;第37卷(第06期);第34-35页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106370931A (en) | 2017-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3480613B1 (en) | Method for measuring the internal resistance of batteries | |
| WO2017067097A1 (en) | Test system and test method for detecting cement content in pile body of cement mixing pile in real-time | |
| CN106370931B (en) | Silicon material batching and segregation device and method | |
| JP2017534783A5 (en) | ||
| CN109901082A (en) | Portable electric energy system and its measurement method | |
| CN105158656A (en) | Circular parallel electrode object dielectric property detection clamping device and detection method thereof | |
| CN111426965B (en) | Method for calculating electric quantity of battery | |
| CN106324351B (en) | Portable four-needle probe for measuring resistivity of silicon material | |
| CN106004481B (en) | A kind of hybrid power automobile battery group SOH value evaluation method | |
| CN202188993U (en) | Automatic measuring device for physical property indexes of soil mass | |
| CN106405247B (en) | Portable silicon material resistivity measuring device | |
| CN106960095A (en) | A kind of method and system for determining wire creep rate | |
| CN206147010U (en) | Silicon materials batching segregation device | |
| CN206863187U (en) | Cell emf experimental provision is surveyed based on ratio times multiplier | |
| CN106645969B (en) | Portable semiconductor non-contact resistivity tester and use method thereof | |
| CN204359628U (en) | A kind of fresh cocoon cocoon layer dry shell amount and moisture percentage measuring apparatus | |
| CN107121659A (en) | A kind of three-phase electric energy meter on-site detection means and detection method | |
| CN206096265U (en) | Portable silicon materials resistivity test device | |
| CN208026799U (en) | A kind of high-precision container bag earth resistance tester | |
| CN207007914U (en) | A kind of digital multimeter with assistant voice prompt facility | |
| CN206523561U (en) | A kind of plain type resistivity detecting device | |
| CN202748466U (en) | Detection system for valve regulated sealed lead-acid battery | |
| CN205642676U (en) | Digit chattock gauge | |
| CN206281894U (en) | Measuring instrument | |
| CN214426860U (en) | Transformer oil temperature acquisition and calibration device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |