CN106324351B - Portable four-needle probe for measuring resistivity of silicon material - Google Patents
Portable four-needle probe for measuring resistivity of silicon material Download PDFInfo
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- CN106324351B CN106324351B CN201610998984.6A CN201610998984A CN106324351B CN 106324351 B CN106324351 B CN 106324351B CN 201610998984 A CN201610998984 A CN 201610998984A CN 106324351 B CN106324351 B CN 106324351B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
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- General Physics & Mathematics (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model discloses a portable four-needle probe for measuring resistivity of a silicon material, which comprises a pen-shaped shell, four probes, a probe wire, an integrated circuit board, an LED lamp, a voice hole, a wire fixing device, a wire set and a nixie tube, wherein the pen-shaped shell is provided with a plurality of probes; the pen-type shell comprises a probe seat cylinder, a cross flange cylinder, a rod holding cylinder, a signal cylinder and a wire cap cylinder; the integrated circuit board comprises a power supply module, two eight-bit nixie tubes, two silicon-structure CMOS devices, a voice circuit module, an LED circuit module and a 9-bit terminal strip; according to the utility model, the metal four-probe adopts a tungsten steel needle with the diameter of 0.5mm, a probe wire adopts a 1.5mm copper wire, when the metal probe tests square resistance semiconductor materials, the resistivity of silicon materials can be displayed by a nixie tube, and the type of the silicon materials is indicated by lighting an LED lamp or is broadcasted by voice; the four-probe can be used for measuring the precision of 0.01%.
Description
Technical Field
The utility model relates to the technical field of measuring resistivity of silicon materials, in particular to a portable four-needle probe for measuring resistivity of silicon materials.
Background
Silicon materials include P-type silicon materials, N-type silicon materials, and heavily doped silicon materials with low resistivity, and when used as a raw material for polysilicon ingot casting or single crystal pulling, these silicon materials must be strictly tested for conductivity type and resistivity. At present, related literature reports about testing equipment and measuring ends for detecting the resistivity and conductivity type of a semiconductor silicon material, such as China patent publication No. CN101852827A discloses a silicon material resistivity voice test pen, and the utility model consists of a probe, an electronic circuit part and a voice playing part; the electronic circuit part consists of a power supply and boosting circuit part, a constant current source and probe circuit part, an operational amplifying circuit and a voice sounding playing part; the utility model adopts the measuring/thickness correcting (change-over switch), so the utility model can carry out debugging and setting according to the specific thickness of the silicon material during the test, adopts the integrated operational amplifier circuit chip MAX4166 to have a low-voltage closing mode, is powered by a dry battery, has high safety coefficient, can carry out real-time voice broadcasting on the measured resistivity value, and has the advantages of simple manufacture, low cost and the like; the utility model further discloses a Chinese patent silicon material resistivity detection device with a publication number of CN201311457, which comprises a voltmeter and an ammeter, wherein the voltmeter is connected with an aviation socket, the aviation socket is also connected with the ammeter, the ammeter is connected with a collector of an amplifier, an emitter of the amplifier is connected with a fixed resistor and a light-emitting diode, a base of the amplifier is connected with a sliding rheostat, the sliding rheostat is also connected with a power supply, the amplifier adopts a three-stage amplifier 9013, and the power supply is a 45V constant current source. The prior technical equipment and detection instrument for measuring PN type of silicon material have the following defects:
(1) The existing equipment for measuring the resistivity of the silicon material, which is commonly adopted in the market, belongs to desk-top equipment, the desk-top equipment is commonly adopted, the equipment is not easy to carry, the probe is inconvenient to maintain and use, the working efficiency is low, the power consumption is larger, and the safety problem exists; when a worker measures, the worker must point a silicon material and then head up to see the host for display, which is inconvenient and affects the measurement accuracy. (2) The resistivity measuring end head of the silicon material, the device and the test pen probe in the disclosed patent have the functions of testing resistivity and PN type, and also have no distinguishing function of PN type and heavy doping, and meanwhile, the probe head has single function and is inconvenient to use; (3) At present, the precision of most products and measuring ends is up to 0.1% -1%, and the precision is not high, so that a four-needle probe for facilitating resistivity of silicon materials is necessary to be provided for solving the problems.
Disclosure of Invention
The utility model aims to integrate the measuring silicon material resistivity and PN type measuring end which have single function, low precision and overlarge volume and are not easy to carry into the handheld portable probe, so that a user can more efficiently measure the silicon material resistivity and PN type, and the operation is safer and the consumption is lower.
In order to overcome the defects of the prior art equipment, the utility model provides a portable four-needle probe for measuring the resistivity of a silicon material, which solves the technical problems that: the portable four-needle probe for measuring the resistivity of the silicon material comprises a pen-shaped shell, four probes, probe wires, an integrated circuit board, an LED lamp, a voice hole, a wire fixing device, a wire group and a nixie tube, and is characterized in that the pen-shaped shell comprises a probe seat cylinder, a cross flange cylinder, a rod holding cylinder, a signal cylinder and a wire cap cylinder, one end of the rod holding cylinder is in threaded connection with the signal cylinder, the other end of the signal cylinder is in threaded connection with the wire cap cylinder, and the other end of the wire cap cylinder is in threaded connection with the wire fixing device; the side wall of the inner part of the other end of the rod holding cylinder is provided with a cross groove, the cross groove is provided with a cross flange cylinder, the other side of the cross flange cylinder is in threaded connection with a probe seat cylinder, the probe seat cylinder is in threaded connection with the rod holding cylinder, and the side surface of the round table at the other end of the probe seat cylinder is provided with four probes; a rectangular plane is arranged in the middle of one side surface of the signal barrel, a nixie tube and three LED lamps of red, blue and green are arranged on the rectangular plane side by side, a voice hole is formed in the side wall of one end cylindrical surface of the signal barrel close to the wire cap barrel and the rectangular plane, and an integrated circuit board is arranged in the signal barrel; the integrated circuit board is electrically connected with the four probes, the voice hole, the LED lamp and the nixie tube, and is electrically connected with an external power supply and a signal control circuit after penetrating through the wire fixing device through the wire set.
The portable four-pin probe for measuring the resistivity of the silicon material is characterized in that the integrated circuit board comprises a power supply module, two eight-bit nixie tubes, two silicon-structure CMOS devices, a voice circuit module, an LED circuit module and a 9-bit terminal row, wherein the two silicon-structure CMOS devices comprise an 8-bit shift register and an 8-bit memory, and are electrically connected with the two eight-bit nixie tubes, and the eight-bit nixie tubes are connected with a +5V voltage terminal of the power supply module through connecting voltage dividing resistors to obtain required voltage; after the related pins of the two silicon structure CMOS devices are electrically connected, the related pins are connected with a +5V voltage terminal of the power module to obtain the required voltage, and are electrically connected with the first, second and third pins of the 9-bit terminal row; the fourth pin, the fifth pin, the sixth pin and the seventh pin of the 9-bit terminal row are simultaneously connected with the LED circuit module, the voice circuit module and the four probe terminals of the four probes; the 9-bit terminal block and the voice circuit module are electrically connected with the +5V voltage terminal of the power supply module.
The portable four-needle probe for measuring the resistivity of the silicon material is characterized in that the voice circuit module comprises a triode Q1, a loudspeaker LS1, a resistor R5 and a resistor R6, wherein the emitting electrode of the triode Q1 is grounded, and the collecting electrode is connected with the negative electrode of the loudspeaker LS 1; after the negative electrode of the loudspeaker LS1 is connected with the resistor R5 in series, the positive electrode of the loudspeaker LS1 is connected, and then a +5V power supply is connected; after the base electrode of the triode Q1 is connected with a resistor R6 in series, a seventh pin of the 9-bit terminal block is connected;
the LED circuit module comprises a resistor R1, a resistor R2, a resistor R3 and an LED lamp, wherein the LED lamp comprises an LED lamp 1, an LED lamp 2 and an LED lamp 3, the cathodes of the LED lamp 1, the LED lamp 2 and the LED lamp 3 are all grounded, and the positive electrodes are respectively connected with the resistor R1, the resistor R2 and the resistor R3 in series; the other ends of the resistor R1, the resistor R2 and the resistor R3 are sequentially connected with fourth pins, fifth pins and sixth pins of the 9-bit terminal row;
and the ninth pin of the 9-bit terminal block is grounded, and the eighth pin is electrically connected with the +5V voltage terminal of the power module.
The portable four-needle probe for measuring the resistivity of the silicon material is characterized in that the voltage of the power supply module is provided by connecting a lead group with an external device for measuring the resistivity of the silicon material.
The portable four-needle probe for measuring the resistivity of the silicon material is characterized in that a metal probe of the four probes adopts a tungsten steel needle with small contact resistance and the diameter of 0.5 mm; the probe wires for connecting the metal probes of the four probes and the integrated circuit board adopt 1.5mm copper wires.
The portable four-needle probe for measuring the resistivity of the silicon material is characterized by comprising the following steps of: the method comprises the steps of firstly, connecting a lead group of four probes with an external device for measuring the resistivity of a silicon material; secondly, pressing four metal probes of the four probes on a square resistor or other semiconductor materials with a certain pressure; thirdly, adjusting an external device for measuring the resistivity of the silicon material, obtaining different voltages, and automatically calculating the resistance and the resistivity; fourthly, a handheld terminal and a handheld probe can display the resistivity of the silicon material through a nixie tube, the type of the silicon material is lighted and prompted or voice broadcast through an LED lamp, namely, the color and voice hole sound of the LED lamp are analyzed, the PN type of the silicon material can be distinguished through the red, blue and green colors of the LED lamp, and the heavily doped type can be distinguished through voice; and fifthly, recording, analyzing and using the test data.
Compared with the prior art, the utility model has the beneficial effects that: according to the utility model, the metal probe adopts the tungsten steel needle with the diameter of 0.5mm, the probe wire adopts the copper wire with the diameter of 1.5mm, the resistance value is smaller, the test precision is improved, when the metal probe tests the square resistance semiconductor material, the resistivity of the silicon material can be displayed by the nixie tube, and the type of the silicon material is indicated by the lighting of the LED lamp or voice broadcast; the four-probe can reach the measurement accuracy of 0.01 percent and the grade is far higher than the standard of 1 percent of the prior art products.
Drawings
Fig. 1 is a schematic structural view of the present utility model.
Fig. 2 is a schematic diagram of a circuit module structure according to the present utility model.
Fig. 3 is a schematic diagram of an LED and voice circuit module according to the present utility model.
In fig. 1: 1. four probes, a probe seat cylinder, a cross flange cylinder, a holding rod cylinder, a signal cylinder, a wire cap cylinder, a probe wire, an integrated circuit board, a 9 LED lamp, a 10 voice hole, a 11 wire fixing device, a 12 wire group and a 13 nixie tube.
Detailed Description
The utility model will be described in further detail with reference to fig. 1 to 3, so that the public can better understand the implementation method of the utility model, and specific embodiments of the utility model are as follows:
as shown in fig. 1, the portable four-needle probe for measuring resistivity of silicon materials comprises a pen-shaped shell, four probes 1, a probe wire 7, an integrated circuit board 8, an LED lamp 9, a voice hole 10, a wire fixing device 11, a wire group 12 and a nixie tube 13, and is characterized in that the pen-shaped shell comprises a probe seat cylinder 2, a cross flange cylinder 3, a rod holding cylinder 4, a signal cylinder 5 and a wire cap cylinder 6, one end of the rod holding cylinder 4 is in threaded connection with the signal cylinder 5, the other end of the signal cylinder 5 is in threaded connection with the wire cap cylinder 6, and the other end of the wire cap cylinder 6 is in threaded connection with the wire fixing device 11; the side wall of the inner part of the other end of the rod holding cylinder 4 is provided with a cross groove, the cross groove is provided with a cross flange cylinder 3, the other side of the cross flange cylinder 3 is in threaded connection with a probe seat cylinder 2, the probe seat cylinder 2 is in threaded connection with the rod holding cylinder 4, and the side surface of the round table type of the other end of the probe seat cylinder 2 is provided with four probes 1; a rectangular plane is arranged in the middle of one side surface of the signal tube 5, a nixie tube 13 and three LED lamps 9 of red, blue and green are arranged on the rectangular plane side by side, a voice hole 10 is formed in the side wall of one end cylindrical surface of the signal tube 5 close to the wire cap tube 6 and the rectangular plane, and an integrated circuit board 8 is arranged in the signal tube 5; the integrated circuit board 8 is electrically connected with the four probes 1, the voice holes 10, the LED lamps 9 and the nixie tubes 13, and the integrated circuit board 8 penetrates through the wire fixing device 11 through the wire set 12 and is electrically connected with an external power supply and a signal control circuit.
As shown in fig. 1 and fig. 2, the portable four-pin probe for measuring resistivity of silicon materials is characterized in that the integrated circuit board 8 comprises a power module, two eight-bit nixie tubes, two silicon structure CMOS devices, a voice circuit module, an LED circuit module and a 9-bit terminal row, wherein the two silicon structure CMOS devices comprise an 8-bit shift register and an 8-bit memory, and are electrically connected with the two eight-bit nixie tubes, and the eight-bit nixie tubes are connected with +5v voltage terminals of the power module through connecting voltage dividing resistors to obtain required voltage; after the related pins of the two silicon structure CMOS devices are electrically connected, the related pins are connected with a +5V voltage terminal of the power module to obtain the required voltage, and are electrically connected with the first, second and third pins of the 9-bit terminal row; the fourth pin, the fifth pin, the sixth pin and the seventh pin of the 9-bit terminal row are simultaneously connected with the LED circuit module, the voice circuit module and the four probe terminals of the four probes 1; the 9-bit terminal block and the voice circuit module are electrically connected with the +5V voltage terminal of the power supply module.
As shown in fig. 3, the portable four-needle probe for measuring resistivity of silicon materials is characterized in that the voice circuit module comprises a triode Q1, a loudspeaker LS1, a resistor R5 and a resistor R6, wherein an emitter of the triode Q1 is grounded, and a collector is connected with a cathode of the loudspeaker LS 1; after the negative electrode of the loudspeaker LS1 is connected with the resistor R5 in series, the positive electrode of the loudspeaker LS1 is connected, and then a +5V power supply is connected; after the base electrode of the triode Q1 is connected with a resistor R6 in series, a seventh pin of the 9-bit terminal block is connected;
the LED circuit module comprises resistors R1, R2 and R3 and an LED lamp, wherein the LED lamp comprises an LED lamp 1, an LED lamp 2 and an LED lamp 3, the cathodes of the LED lamp 1, the LED lamp 2 and the LED lamp 3 are grounded, and the positive electrodes are respectively connected with the resistor R1, the resistor R2 and the resistor R3 in series; the other ends of the resistor R1, the resistor R2 and the resistor R3 are sequentially connected with fourth pins, fifth pins and sixth pins of the 9-bit terminal row;
and the ninth pin of the 9-bit terminal block is grounded, and the eighth pin is electrically connected with the +5V voltage terminal of the power module.
As shown in fig. 1, the portable four-needle probe for measuring resistivity of silicon material is characterized in that the voltage of the power module is provided by connecting a wire set 12 with an external device for measuring resistivity of silicon material.
As shown in fig. 1, the portable four-needle probe for measuring resistivity of silicon material is characterized in that a tungsten steel needle with small contact resistance and 0.5mm diameter is adopted as a metal probe of the four-needle probe 1; the probe wires 7 of the four probes 1, which are connected with the integrated circuit board 8, are 1.5mm copper wires.
As shown in fig. 1, the portable four-needle probe for measuring resistivity of silicon material is characterized in that the resistivity test method for silicon material is as follows: the first step, connecting the lead group 12 of the four probes 1 with an external device for measuring the resistivity of the silicon material; secondly, pressing four metal probes of the four probes 1 on a square resistor or other semiconductor materials with a certain pressure; thirdly, adjusting an external device for measuring the resistivity of the silicon material, obtaining different voltages, and automatically calculating the resistance and the resistivity; fourthly, a handheld terminal and a handheld probe can display the resistivity of the silicon material through a nixie tube, the type of the silicon material is lighted and prompted or voice broadcast through an LED lamp, namely, the color of the LED lamp 9 and the sound of a voice hole 10 are analyzed, the PN type of the silicon material can be distinguished through the red, blue and green colors of the LED lamp 9, and the heavily doped type can be distinguished through voice; and fifthly, recording, analyzing and using the test data.
Compared with the prior art, the utility model has the beneficial effects that: the utility model discloses a portable four-needle probe for measuring resistivity of a silicon material, which comprises a pen-shaped shell, four probes, probe wires, an integrated circuit board, an LED lamp, a voice hole, a wire fixing device, a wire set and a nixie tube, wherein the pen-shaped shell comprises a probe seat cylinder, a cross flange cylinder, a rod holding cylinder, a signal cylinder and a wire cap cylinder; the integrated circuit board comprises a power supply module, two eight-bit nixie tubes, two silicon-structure CMOS devices, a voice circuit module, an LED circuit module and a 9-bit terminal strip; according to the utility model, the metal probe adopts a tungsten steel needle with the diameter of 0.5mm, the probe wire adopts a 1.5mm copper wire, when the metal probe tests square resistance semiconductor materials, the resistivity of the silicon materials can be displayed by a nixie tube, and the type of the silicon materials is indicated by lighting an LED lamp or is broadcasted by voice; the four-probe can reach 0.01% of measurement accuracy, the level is far higher than the standard of 1% of the prior art product, and the effect is obvious.
The foregoing description of the preferred embodiments of the utility model is not intended to limit the utility model to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the utility model are intended to be included within the scope of the utility model.
Claims (6)
1. The utility model provides a four needle probes of portable measurement silicon material resistivity, includes pen-type casing, four probe (1), probe wire (7), integrated circuit board (8), LED lamp (9), pronunciation hole (10), wire fixer (11), wire group (12), charactron (13), its characterized in that pen-type casing includes probe seat section of thick bamboo (2), cross flange section of thick bamboo (3), holds pole section of thick bamboo (4), signal section of thick bamboo (5), line cap section of thick bamboo (6), hold pole section of thick bamboo (4) one end threaded connection and set up signal section of thick bamboo (5), signal section of thick bamboo (5) other end threaded connection sets up line cap section of thick bamboo (6), line cap section of thick bamboo (6) other end threaded connection sets up wire fixer (11); the novel probe comprises a rod holding cylinder (4), a cross groove is formed in the inner side wall of the other end of the rod holding cylinder (4), a cross flange cylinder (3) is arranged on the cross groove, a probe seat cylinder (2) is arranged on the other side of the cross flange cylinder (3) in a threaded connection mode, the probe seat cylinder (2) is in threaded connection with the rod holding cylinder (4), and four probes (1) are arranged on the round table type side face of the other end of the probe seat cylinder (2); a rectangular plane is arranged in the middle of one side surface of the signal tube (5), a nixie tube (13) and three LED lamps (9) of red, blue and green are arranged on the rectangular plane side by side, a voice hole (10) is formed in the side wall of one end cylindrical surface of the signal tube (5) close to the wire cap tube (6) and the rectangular plane, and an integrated circuit board (8) is arranged in the signal tube (5); the integrated circuit board (8) is electrically connected with the four probes (1), the voice hole (10), the LED lamp (9) and the nixie tube (13), and the integrated circuit board (8) is electrically connected with an external power supply and a signal control circuit after penetrating through the wire fixing device (11) through the wire set (12).
2. The portable four-pin probe for measuring the resistivity of the silicon material according to claim 1, wherein the integrated circuit board (8) comprises a power supply module, two eight-bit nixie tubes, two silicon-structure CMOS devices, a voice circuit module, an LED circuit module and a 9-bit terminal block, the two silicon-structure CMOS devices comprise an 8-bit shift register and an 8-bit memory, the two silicon-structure CMOS devices are electrically connected with the two eight-bit nixie tubes, and the eight-bit nixie tubes are connected with a +5V voltage terminal of the power supply module through a connecting divider resistor to obtain a required voltage; after the related pins of the two silicon structure CMOS devices are electrically connected, the related pins are connected with a +5V voltage terminal of the power module to obtain the required voltage, and are electrically connected with the first, second and third pins of the 9-bit terminal row; the fourth pin, the fifth pin, the sixth pin and the seventh pin of the 9-bit terminal row are simultaneously connected with the LED circuit module, the voice circuit module and the four probe terminals of the four probes (1); the 9-bit terminal block and the voice circuit module are electrically connected with the +5V voltage terminal of the power supply module.
3. The portable four-needle probe for measuring the resistivity of the silicon material according to claim 2, wherein the voice circuit module comprises a triode Q1, a loudspeaker LS1, a resistor R5 and a resistor R6, the emitter of the triode Q1 is grounded, and the collector is connected with the cathode of the loudspeaker LS 1; after the negative electrode of the loudspeaker LS1 is connected with the resistor R5 in series, the positive electrode of the loudspeaker LS1 is connected, and then a +5V power supply is connected; after the base electrode of the triode Q1 is connected with a resistor R6 in series, a seventh pin of the 9-bit terminal block is connected;
the LED circuit module comprises a resistor R1, a resistor R2, a resistor R3 and an LED lamp, wherein the LED lamp comprises an LED lamp 1, an LED lamp 2 and an LED lamp 3, the cathodes of the LED lamp 1, the LED lamp 2 and the LED lamp 3 are all grounded, and the positive electrodes are respectively connected with the resistor R1, the resistor R2 and the resistor R3 in series; the other ends of the resistor R1, the resistor R2 and the resistor R3 are sequentially connected with fourth pins, fifth pins and sixth pins of the 9-bit terminal row;
and the ninth pin of the 9-bit terminal block is grounded, and the eighth pin is electrically connected with the +5V voltage terminal of the power module.
4. A portable four-pin probe for measuring resistivity of silicon material according to claim 2, characterized in that the voltage of the power supply module is provided by a wire set (12) connected to an external means for measuring resistivity of silicon material.
5. The portable four-needle probe for measuring resistivity of silicon materials according to claim 1, wherein the metal probe of the four-needle probe (1) adopts a tungsten steel needle with the diameter of 0.5 mm; the metal probes of the four probes (1) are connected with the probe wires (7) of the integrated circuit board (8) by adopting 1.5mm copper wires.
6. A method for testing resistivity of a silicon material by using the portable four-needle probe for measuring resistivity of a silicon material according to any one of claims 1 to 5, wherein the method for testing resistivity of a silicon material comprises the following steps:
the method comprises the steps that firstly, a lead group (12) of a four-probe (1) is connected with an external device for measuring the resistivity of a silicon material;
secondly, pressing four metal probes of the four probes (1) on a square resistor or other semiconductor materials with a certain pressure;
thirdly, adjusting an external device for measuring the resistivity of the silicon material, obtaining different voltages, and automatically calculating the resistance and the resistivity;
fourthly, a handheld terminal and a handheld probe are used for displaying the resistivity of the silicon material, the type of the silicon material is lighted and prompted or voice broadcast through the LED lamp, namely, the color of the LED lamp (9) and the sound of the voice hole (10) are analyzed, the PN type of the silicon material can be distinguished through the red, blue and green colors of the LED lamp (9), and the heavily doped type can be distinguished through voice;
and fifthly, recording and analyzing the test data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998984.6A CN106324351B (en) | 2016-11-14 | 2016-11-14 | Portable four-needle probe for measuring resistivity of silicon material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998984.6A CN106324351B (en) | 2016-11-14 | 2016-11-14 | Portable four-needle probe for measuring resistivity of silicon material |
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| CN106324351A CN106324351A (en) | 2017-01-11 |
| CN106324351B true CN106324351B (en) | 2023-07-18 |
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| CN201610998984.6A Active CN106324351B (en) | 2016-11-14 | 2016-11-14 | Portable four-needle probe for measuring resistivity of silicon material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106645969B (en) * | 2017-02-17 | 2023-07-04 | 山东辰宇稀有材料科技有限公司 | Portable semiconductor non-contact resistivity tester and use method thereof |
| CN108356437B (en) * | 2018-02-12 | 2020-08-11 | 南京工程学院 | System and method for detecting weldability of surface of martensitic steel hot stamping forming part |
| CN108957275A (en) * | 2018-06-29 | 2018-12-07 | 韩华新能源（启东）有限公司 | Conductive wafer type identification method and discriminating device and tester based on the method for discrimination |
| CN109411364B (en) * | 2018-11-06 | 2020-08-21 | 绍兴市秀臻新能源科技有限公司 | Integrated circuit board via hole outsourcing metal device |
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| US5367250A (en) * | 1992-06-11 | 1994-11-22 | Whisenand Jeffery E | Electrical tester with electrical energizable test probe |
| JP2006258774A (en) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | Quadruple probe head and evaluating method for semiconductor characteristic |
| CN2905246Y (en) * | 2006-05-10 | 2007-05-30 | 浙江昱辉阳光能源有限公司 | A portable silicon material classifying apparatus |
| CN206147009U (en) * | 2016-11-14 | 2017-05-03 | 山东辰宇稀有材料科技有限公司 | Four needles probe of portable measurement silicon materials resistivity |
-
2016
- 2016-11-14 CN CN201610998984.6A patent/CN106324351B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367250A (en) * | 1992-06-11 | 1994-11-22 | Whisenand Jeffery E | Electrical tester with electrical energizable test probe |
| JP2006258774A (en) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | Quadruple probe head and evaluating method for semiconductor characteristic |
| CN2905246Y (en) * | 2006-05-10 | 2007-05-30 | 浙江昱辉阳光能源有限公司 | A portable silicon material classifying apparatus |
| CN206147009U (en) * | 2016-11-14 | 2017-05-03 | 山东辰宇稀有材料科技有限公司 | Four needles probe of portable measurement silicon materials resistivity |
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| CN106324351A (en) | 2017-01-11 |
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