CN106324351A - Portable four-needle probe for measuring resistivity of silicon materials - Google Patents
Portable four-needle probe for measuring resistivity of silicon materials Download PDFInfo
- Publication number
- CN106324351A CN106324351A CN201610998984.6A CN201610998984A CN106324351A CN 106324351 A CN106324351 A CN 106324351A CN 201610998984 A CN201610998984 A CN 201610998984A CN 106324351 A CN106324351 A CN 106324351A
- Authority
- CN
- China
- Prior art keywords
- led
- resistance
- probes
- cylinder
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
Abstract
The invention discloses a portable four-needle probe for measuring the resistivity of silicon materials. The portable four-needle probe comprises a pen-shaped shell, four needles, needle conducting wires, an integrated circuit board, LED lamps, voice holes, a wire fixing apparatus, a conducting wire group and a digital tube. The pen-shaped shell comprises a needle bed barrel, a cross flange barrel, a grip rod barrel, a signal barrel and a wire cap barrel; the integrated circuit board comprises a power module, two eight-bit digital tubes, two silicon structure CMOS (complementary metal oxide semiconductor) devices, a voice circuit module, an LED circuit module and a 9-bit terminal strip. The portable four-needle probe has the advantages that the four metal needles are tungsten steel needles with the diameters of 0.5 mm, the needle conducting wires are 1.5mm copper wires, the resistivity of the silicon materials can be displayed by the digital tube when square resistance semiconductor materials are tested by the metal needles, and the types of the silicon materials can be prompted by means of turning on the LED lamps or can be broadcast by voice; the measuring precision of the portable four-needle probe can reach 0.01%.
Description
Technical field
The present invention relates to measure the technical field of silicon material resistivity, particularly relate to a kind of portable type measuring silicon materials electricity
Four pin probes of resistance rate.
Background technology
Silicon material includes the heavily-doped Si material that P-type silicon material, N type silicon material and resistivity are low, as polycrystalline silicon ingot casting or list
During the raw material that crystalline substance draws, it is necessary to the strict conduction type testing these silicon material and resistivity.Currently, with respect to detection semiconductor silicon material
Material resistivity and the test equipment of conduction type, measurement termination, the document being correlated with is reported, such as Publication No.
The Chinese patent of CN101852827A discloses a kind of silicon material resistivity voice test pen, and this invention is by probe, electronics electricity
Road part and speech utterance play part composition；Electronic circuitry part is by power supply and booster circuit part, constant-current source and probe electricity
Road part, operational amplification circuit and speech utterance are play part and are constituted；Due to the fact that employing measurement/school thickness (open by conversion
Close), set so debugging can be carried out according to the concrete thickness size cases of silicon materials during test, use integrated operational amplifier circuit
Chip MAX4166 has low-voltage " shut " mode", dry cell power supply, and safety coefficient is high, and recording resistivity value can broadcast by real-time voice
Report, and tool is simple to manufacture, the advantage such as cheap；Separately there is the Chinese patent silicon material resistivity of Publication No. CN201311457
Detection device, this utility model silicon material electric resistivity detection device includes voltmeter, ammeter, and voltmeter connects has aviation to insert
Seat, aviation socket is also connected with ammeter, and ammeter connects the colelctor electrode of amplifier, and the emitter stage connection of amplifier has fixing
Resistance and light emitting diode, the base stage of amplifier is connected with slide rheostat, and slide rheostat is also associated with power supply, puts
Big device uses triode amplifier 9013, and power supply is 45V constant-current source.Measure technical equipment and the spy of silicon materials PN type at present
Survey instrument existence to be disadvantageous in that:
(1) commonly used on market measurement silicon material resistivity existing equipment belongs to bench device, commonly used bench device,
The most portable, probe is safeguarded, is used inconvenience, inefficiency, and power consumption is relatively big, and there is safety problem；Workman measure time,
Silicon materials must be tapped look up main frame the most again and show, very inconvenient, and affect certainty of measurement.(2) in disclosed patent
Silicon material resistivity measure termination and device thereof, test pen probe is not provided simultaneously with test resistance rate and PN type function, the most not
Possessing PN type and heavily doped function distinguishes, probe function singleness simultaneously, the used time is inconvenient；(3) current most products and measurement end
Head precision reaches 0.1% ~ 1% mostly, and precision is the highest, it is therefore necessary to the four pin probes proposing a kind of just silicon material resistivity solve
The problems referred to above.
Summary of the invention
The purpose of the present invention be exactly function singleness, precision is the highest, volume is excessive and the most portative measurement silicon materials electricity
Resistance rate and PN type are measured termination and are integrated into the portable probe of hand-held, allow the more efficient measurement silicon material resistivity of user and
PN type, operates safer, more low consumption simultaneously.
For overcoming the deficiency of above-mentioned prior art device, the invention provides a kind of portable type measuring silicon material resistivity
Four pin probes, the technical scheme solving its technical problem is: four pin probes of described portable type measuring silicon material resistivity, including
Pen type housing, four probes, probe leads, surface-mounted integrated circuit, LED, voice hole, wire fixer, wire group, charactron, its feature
Be that described pen type housing includes probe base cylinder, cross flange cylinder, holds pole cylinder, signal tube, line cap cylinder, described in hold pole cylinder one end spiral shell
Stricture of vagina connection arranges signal tube, and the threaded line cap cylinder that arranges of the described signal tube other end, the described line cap cylinder other end is threaded
Wire fixer is set；Described holding arranges cross recess in pole cylinder other end internal side wall, and cross recess arranges cross flange cylinder, institute
Stating the threaded probe base cylinder that arranges of cross flange cylinder opposite side, described probe base cylinder is threadeded with holding pole cylinder, described probe
On the circular platform type side of the seat cylinder other end, four probes are set；In the middle part of described signal tube one side, rectangle plane, rectangle plane are set
On be arranged side by side charactron and red bluish-green three LED, near line cap cylinder and the face of cylinder, the signal tube one end sidewall of rectangle plane
On voice hole is set, inside described signal tube, surface-mounted integrated circuit is set；Described surface-mounted integrated circuit and four probes, voice hole, LED
Lamp, charactron all electrically connect, and described surface-mounted integrated circuit controls electricity with external power source and signal after running through wire fixer by wire group
Road electrically connects.
Four pin probes of portable type measuring silicon material resistivity of the present invention, it is characterised in that described surface-mounted integrated circuit
Including power module, two eight-digit number code pipes, two silicon structure cmos devices, voice circuit module of electric, LED circuit module, 9 ends
Son row, said two silicon structure cmos device includes 8 bit shift register and 8 bit memories, all with two eight-digit number code pipe electricity
Connecting, described eight-digit number code pipe obtains required voltage by connecting divider resistance connection power module+5V voltage terminal；Described two
After the electrical connection of individual silicon structure cmos device relevant pins, connect power module+5V voltage terminal and obtain required voltage, simultaneously with 9
Position terminal block first, second and third pin electrical connection；Described 9 terminal block fourth, fifth, six, seven pin is all simultaneously connected with LED circuit
Four probe terminals of module, voice circuit module of electric and four probes；9 terminal block and voice circuit module of electric and power module+5V
Voltage terminal electrically connects.
Four pin probes of portable type measuring silicon material resistivity of the present invention, it is characterised in that described sound circuit mould
Block includes audion Q1, loudspeaker LS1, resistance R5, resistance R6, described audion Q1 grounded emitter, and colelctor electrode connects loudspeaker LS1
Negative pole；After loudspeaker LS1 negative pole series resistance R5, connect loudspeaker LS1 positive pole, reconnect+5V power supply；Audion Q1 base series electricity
After resistance R6, connect 9 terminals and ranked seventh pin；
Described LED circuit module includes resistance R1, resistance R2, resistance R3 and LED, and described LED includes LED 1, LED
2, LED 3, described LED 1, LED 2, the equal ground connection of LED 3 negative pole, positive pole series resistance R1, resistance R2, resistance R3 respectively；
Described resistance R1, resistance R2, the other end of resistance R3 are sequentially connected with 9 terminal block fourth, fifth, six pin；
Described 9 terminals ranked nineth pin ground connection, and the 8th pin electrically connects with power module+5V voltage terminal.
Four pin probes of portable type measuring silicon material resistivity of the present invention, it is characterised in that described power module
The device that voltage connects externally measured silicon material resistivity by wire group provides.
Four pin probes of portable type measuring silicon material resistivity of the present invention, it is characterised in that the metal of four probes is visited
Pin uses the wolfram steel pin of the diameter 0.5mm that contact resistance is little；The probe that the metal probe of four probes is connected with surface-mounted integrated circuit is led
Line uses 1.5mm copper cash.
Four pin probes of portable type measuring silicon material resistivity of the present invention, it is characterised in that it is for silicon materials electricity
Resistance rate method of testing is as follows: the first step, and the wire group of four probes connects the external device (ED) measuring silicon material resistivity；Second
Step, four metal probes of four probes are pressed on square resistance or other semi-conducting material with certain pressure；3rd step, regulation
Measure the external device (ED) of silicon material resistivity, get different voltage, automatically calculate resistance, resistivity；4th step, on the other hand
Hold terminal, a hand hold transducer, can numeral method silicon material resistivity, by LED light prompting or voice broadcast silicon materials
Type, is i.e. analyzed color and the voice hole sound of LED, can be distinguished the PN type of silicon materials by the red bluish-green color of LED, logical
Cross voice and can distinguish heavily doped type；5th step, records, analyzes, uses test data.
Compared with prior art, beneficial effects of the present invention is embodied in: metal probe of the present invention uses the tungsten of diameter 0.5mm
Draw point, probe leads use 1.5mm copper cash, have less resistance value, improve measuring accuracy, when square tested by metal probe
During resistance semi material, can numeral method silicon material resistivity, by LED light prompting or voice broadcast silicon materials class
Type；Using four probe of the present invention, certainty of measurement can reach 0.01%, and grade is far above prior art products 1%
Standard.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the circuit modular structure schematic diagram of the present invention.
Fig. 3 is LED and the voice circuit module of electric schematic diagram of the present invention.
In accompanying drawing 1: 1. four probe, 2. probe base cylinder, 3. cross flange cylinder, 4. hold pole cylinder, 5. signal tube, 6. line cap cylinder,
7. probe leads, 8. surface-mounted integrated circuit, 9.LED lamp, 10. voice hole, 11. wire fixers, 12. wire groups, 13. charactrons.
Detailed description of the invention
In conjunction with accompanying drawing 1 to Fig. 3, the present invention is described in further detail, in order to the public preferably grasps the embodiment party of the present invention
Method, specific embodiment of the present invention is:
As it is shown in figure 1, portable type measuring silicon material resistivity of the present invention four pins probe, including pen type housing, four
Probe 1, probe leads 7, surface-mounted integrated circuit 8, LED 9, voice hole 10, wire fixer 11, wire group 12, charactron 13, its feature
Be that described pen type housing includes probe base cylinder 2, cross flange cylinder 3, holds pole cylinder 4, signal tube 5, line cap cylinder 6, described in hold pole cylinder 4
Threaded one end connect signal tube 5 is set, the threaded line cap cylinder 6 that arranges of described signal tube 5 other end, described line cap cylinder 6 another
Hold and threaded wire fixer 11 is set；Described holding arranges cross recess in pole cylinder 4 other end internal side wall, and cross recess is arranged
Cross flange cylinder 3, the threaded probe base cylinder 2 that arranges of described cross flange cylinder 3 opposite side, described probe base cylinder 2 with hold pole cylinder 4
Threaded, the circular platform type side of described probe base cylinder 2 other end arranges four probes 1；Set in the middle part of described signal tube 5 one side
Put rectangle plane, rectangle plane is arranged side by side charactron 13 and red bluish-green three LED 9, near line cap cylinder 6 and rectangle plane
The face of cylinder, signal tube 5 one end sidewall on voice hole 10 is set, described signal tube 5 is internal arranges surface-mounted integrated circuit 8；Described integrated
Circuit board 8 all electrically connects with four probes 1, voice hole 10, LED 9, charactron 13, and described surface-mounted integrated circuit 8 is by wire group 12
Electrically connect with external power source and signal control circuit after running through wire fixer 11.
As shown in Figure 1 and Figure 2, four pin probes of portable type measuring silicon material resistivity of the present invention, its feature
It is that described surface-mounted integrated circuit 8 includes power module, two eight-digit number code pipes, two silicon structure cmos devices, sound circuit moulds
Block, LED circuit module, 9 terminal block, said two silicon structure cmos device includes 8 bit shift register and 8 bit memories,
All electrically connecting with two eight-digit number code pipes, described eight-digit number code pipe connects power module+5V voltage end by connecting divider resistance
Son obtains required voltage；After the electrical connection of said two silicon structure cmos device relevant pins, connect power module+5V voltage terminal
Obtain required voltage, electrically connect with 9 terminal block first, second and third pins simultaneously；Described 9 terminal block fourth, fifth, six, seven are drawn
Foot is all simultaneously connected with four probe terminals of LED circuit module, voice circuit module of electric and four probes 1；9 terminal block and voice electricity
Road module electrically connects with power module+5V voltage terminal.
As it is shown on figure 3, four pin probes of portable type measuring silicon material resistivity of the present invention, it is characterised in that institute
State voice circuit module of electric and include audion Q1, loudspeaker LS1, resistance R5, resistance R6, described audion Q1 grounded emitter, current collection
Pole connects loudspeaker LS1 negative pole；After loudspeaker LS1 negative pole series resistance R5, connect loudspeaker LS1 positive pole, reconnect+5V power supply；Three poles
After pipe Q1 base series resistor R6, connect 9 terminals and ranked seventh pin；
Described LED circuit module includes that resistance R1, R2, R3 and LED, described LED include LED 1, LED 2, LED 3,
Described LED 1, LED 2, the equal ground connection of LED 3 negative pole, positive pole series resistance R1, resistance R2, resistance R3 respectively；Described resistance
R1, resistance R2, the other end of resistance R3 are sequentially connected with 9 terminal block fourth, fifth, six pin；
Described 9 terminals ranked nineth pin ground connection, and the 8th pin electrically connects with power module+5V voltage terminal.
As it is shown in figure 1, four pin probes of described portable type measuring silicon material resistivity, it is characterised in that described power supply mould
The device that the voltage of block connects externally measured silicon material resistivity by wire group 12 provides.
As it is shown in figure 1, four pin probes of described portable type measuring silicon material resistivity, it is characterised in that portable type measuring
Four pin probes of silicon material resistivity, it is characterised in that the metal probe of four probes 1 uses the diameter 0.5mm's that contact resistance is little
Wolfram steel pin；The probe leads 7 that the metal probe of four probes 1 is connected with surface-mounted integrated circuit 8 uses 1.5mm copper cash.
As it is shown in figure 1, four pin probes of described portable type measuring silicon material resistivity, it is characterised in that it is for silicon material
Material resistivity measurement method is as follows: the first step, and the wire group 12 of four probes 1 connects the outside dress measuring silicon material resistivity
Put；Second step, four metal probes of four probes 1 are pressed on square resistance or other semi-conducting material with certain pressure；The
Three steps, regulation is measured the external device (ED) of silicon material resistivity, is got different voltage, automatically calculate resistance, resistivity；The
Four steps, a handheld terminal, a hand hold transducer, can numeral method silicon material resistivity, by LED light prompting or voice broadcast
Report silicon materials type, i.e. analyzes color and voice hole 10 sound of LED 9, can distinguish silicon by the red bluish-green color of LED 9
The PN type of material, can distinguish heavily doped type by voice；5th step, records, analyzes, uses test data.
Compared with prior art, beneficial effects of the present invention is embodied in: portable type measuring silicon materials resistance of the present invention
Four pin probes of rate, including pen type housing, four probes, probe leads, surface-mounted integrated circuit, LED, voice hole, wire fixer, wire
Group, charactron, described pen type housing includes probe base cylinder, cross flange cylinder, holds pole cylinder, signal tube, line cap cylinder；Surface-mounted integrated circuit
Including power module, two eight-digit number code pipes, two silicon structure cmos devices, voice circuit module of electric, LED circuit module, 9 ends
Son row；Metal probe of the present invention uses the wolfram steel pin of diameter 0.5mm, probe leads to use 1.5mm copper cash, when metal probe is tested
During square resistance semi-conducting material, can numeral method silicon material resistivity, by LED light prompting or voice broadcast silicon material
Material type；Using four probe of the present invention, certainty of measurement can reach 0.01%, and grade is far above prior art products
The standard of 1%, effect is notable.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all this present invention's
Spirit and principle within, any modification, equivalent substitution and improvement etc. made, should be included in this protection scope of the present invention it
In.
Claims (6)
1. four pin probes of a portable type measuring silicon material resistivity, including pen type housing, four probes (1), probe leads
(7), surface-mounted integrated circuit (8), LED (9), voice hole (10), wire fixer (11), wire group (12), charactron (13), its feature
It is that described pen type housing includes probe base cylinder (2), cross flange cylinder (3), holds pole cylinder (4), signal tube (5), line cap cylinder (6),
Described hold pole cylinder (4) threaded one end connect signal tube (5) is set, described signal tube (5) other end is threaded arranges line cap cylinder
(6), described line cap cylinder (6) other end is threaded arranges wire fixer (11)；Described holding sets in pole cylinder (4) other end internal side wall
Putting cross recess, cross recess arranges cross flange cylinder (3), described cross flange cylinder (3) opposite side is threaded arranges spy
Needle stand cylinder (2), described probe base cylinder (2) threadeds with holding pole cylinder (4), the circular platform type side of described probe base cylinder (2) other end
Four probes (1) are set on face；In the middle part of described signal tube (5) one side, rectangle plane is set, rectangle plane is arranged side by side number
Pipe (13) and red bluish-green three LED (9), on signal tube (5) face of cylinder, one end sidewall of line cap cylinder (6) and rectangle plane
Arranging voice hole (10), described signal tube (5) is internal arranges surface-mounted integrated circuit (8)；Described surface-mounted integrated circuit (8) and four probes
(1), voice hole (10), LED (9), charactron (13) all electrically connect, described surface-mounted integrated circuit (8) is passed through by wire group (12)
Wear wire fixer (11) to electrically connect with external power source and signal control circuit afterwards.
Four pin probes of portable type measuring silicon material resistivity the most according to claim 1, it is characterised in that described integrated
Circuit board (8) includes power module, two eight-digit number code pipes, two silicon structure cmos devices, voice circuit module of electric, LED circuits
Module, 9 terminal block, said two silicon structure cmos device includes 8 bit shift register and 8 bit memories, all with two eight
Digital sum pipe electrically connects, and described eight-digit number code pipe obtains required by connecting divider resistance connection power module+5V voltage terminal
Voltage；After the electrical connection of said two silicon structure cmos device relevant pins, connect power module+5V voltage terminal and obtain required electricity
Pressure, electrically connects with 9 terminal block first, second and third pins simultaneously；Described 9 terminal block fourth, fifth, six, seven pin connects the most simultaneously
Connect four probe terminals of LED circuit module, voice circuit module of electric and four probes (1)；9 terminal block and voice circuit module of electric with
Power module+5V voltage terminal electrically connects.
Four pin probes of portable type measuring silicon material resistivity the most according to claim 2, it is characterised in that described voice
Circuit module includes audion Q1, loudspeaker LS1, resistance R5, resistance R6, described audion Q1 grounded emitter, and colelctor electrode connects
Loudspeaker LS1 negative pole；After loudspeaker LS1 negative pole series resistance R5, connect loudspeaker LS1 positive pole, reconnect+5V power supply；Audion Q1 base
After series resistance R6 of pole, connect 9 terminals and ranked seventh pin；
Described LED circuit module includes resistance R1, resistance R2, resistance R3 and LED, and described LED includes LED 1, LED
2, LED 3, described LED 1, LED 2, the equal ground connection of LED 3 negative pole, positive pole series resistance R1, resistance R2, resistance R3 respectively；
Described resistance R1, resistance R2, the other end of resistance R3 are sequentially connected with 9 terminal block fourth, fifth, six pin；
Described 9 terminals ranked nineth pin ground connection, and the 8th pin electrically connects with power module+5V voltage terminal.
Four pin probes of portable type measuring silicon material resistivity the most according to claim 2, it is characterised in that described power supply
The device that the voltage of module connects externally measured silicon material resistivity by wire group (12) provides.
Four pin probes of portable type measuring silicon material resistivity the most according to claim 1, it is characterised in that four probes (1)
Metal probe use diameter 0.5mm wolfram steel pin；The probe that the metal probe of four probes (1) is connected with surface-mounted integrated circuit (8)
Wire (7) uses 1.5mm copper cash.
6. a silicon material resistivity method of testing, uses the portable type measuring silicon materials electricity described in any one of Claims 1 to 5
Four pin probes of resistance rate, it is characterised in that described silicon material resistivity method of testing step is as follows:
The first step, connects the external device (ED) measuring silicon material resistivity by the wire group (12) of four probes (1)；
Second step, four metal probes of four probes (1) are pressed on square resistance or other semi-conducting material with certain pressure；
3rd step, regulation is measured the external device (ED) of silicon material resistivity, is got different voltage, automatically calculate resistance, electricity
Resistance rate；
4th step, a handheld terminal, a hand hold transducer, numeral method silicon material resistivity, light prompting or language by LED
Sound reports silicon materials type, i.e. analyzes color and voice hole (10) sound of LED (9), by the red bluish-green face of LED (9)
Color can distinguish the PN type of silicon materials, can distinguish heavily doped type by voice；
5th step, record, analyzing test data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998984.6A CN106324351B (en) | 2016-11-14 | 2016-11-14 | Portable four-needle probe for measuring resistivity of silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610998984.6A CN106324351B (en) | 2016-11-14 | 2016-11-14 | Portable four-needle probe for measuring resistivity of silicon material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106324351A true CN106324351A (en) | 2017-01-11 |
| CN106324351B CN106324351B (en) | 2023-07-18 |
Family
ID=57817466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610998984.6A Active CN106324351B (en) | 2016-11-14 | 2016-11-14 | Portable four-needle probe for measuring resistivity of silicon material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106324351B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645969A (en) * | 2017-02-17 | 2017-05-10 | 山东辰宇稀有材料科技有限公司 | Portable semiconductor non-contact resistivity tester and use method thereof |
| CN108356437A (en) * | 2018-02-12 | 2018-08-03 | 南京工程学院 | The hot press-formed piece surface solderability detecting system of martensite steel and detection method |
| CN108957275A (en) * | 2018-06-29 | 2018-12-07 | 韩华新能源（启东）有限公司 | Conductive wafer type identification method and discriminating device and tester based on the method for discrimination |
| CN109411364A (en) * | 2018-11-06 | 2019-03-01 | 刘娟 | A kind of integrated circuit board via hole kalamein device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367250A (en) * | 1992-06-11 | 1994-11-22 | Whisenand Jeffery E | Electrical tester with electrical energizable test probe |
| JP2006258774A (en) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | Quadruple probe head and evaluating method for semiconductor characteristic |
| CN2905246Y (en) * | 2006-05-10 | 2007-05-30 | 浙江昱辉阳光能源有限公司 | A portable silicon material classifying apparatus |
| CN206147009U (en) * | 2016-11-14 | 2017-05-03 | 山东辰宇稀有材料科技有限公司 | Four needles probe of portable measurement silicon materials resistivity |
-
2016
- 2016-11-14 CN CN201610998984.6A patent/CN106324351B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367250A (en) * | 1992-06-11 | 1994-11-22 | Whisenand Jeffery E | Electrical tester with electrical energizable test probe |
| JP2006258774A (en) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | Quadruple probe head and evaluating method for semiconductor characteristic |
| CN2905246Y (en) * | 2006-05-10 | 2007-05-30 | 浙江昱辉阳光能源有限公司 | A portable silicon material classifying apparatus |
| CN206147009U (en) * | 2016-11-14 | 2017-05-03 | 山东辰宇稀有材料科技有限公司 | Four needles probe of portable measurement silicon materials resistivity |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645969A (en) * | 2017-02-17 | 2017-05-10 | 山东辰宇稀有材料科技有限公司 | Portable semiconductor non-contact resistivity tester and use method thereof |
| CN106645969B (en) * | 2017-02-17 | 2023-07-04 | 山东辰宇稀有材料科技有限公司 | Portable semiconductor non-contact resistivity tester and use method thereof |
| CN108356437A (en) * | 2018-02-12 | 2018-08-03 | 南京工程学院 | The hot press-formed piece surface solderability detecting system of martensite steel and detection method |
| CN108356437B (en) * | 2018-02-12 | 2020-08-11 | 南京工程学院 | System and method for detecting weldability of surface of martensitic steel hot stamping forming part |
| CN108957275A (en) * | 2018-06-29 | 2018-12-07 | 韩华新能源（启东）有限公司 | Conductive wafer type identification method and discriminating device and tester based on the method for discrimination |
| CN109411364A (en) * | 2018-11-06 | 2019-03-01 | 刘娟 | A kind of integrated circuit board via hole kalamein device |
| CN109411364B (en) * | 2018-11-06 | 2020-08-21 | 绍兴市秀臻新能源科技有限公司 | Integrated circuit board via hole outsourcing metal device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106324351B (en) | 2023-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106324351A (en) | Portable four-needle probe for measuring resistivity of silicon materials | |
| CN206147009U (en) | Four needles probe of portable measurement silicon materials resistivity | |
| CN204855625U (en) | Voltage current detection tool of general type USB interface | |
| CN106405247B (en) | Portable silicon material resistivity measuring device | |
| CN208239508U (en) | A kind of multimeter wrong way alarm device | |
| CN205879991U (en) | Nickel -hydrogen battery inter block hinders, voltage test fixture | |
| CN208921814U (en) | Electric car harness switching detection device | |
| CN2775667Y (en) | Magnetic meter pen | |
| CN202393834U (en) | Precise ohmic internal resistance measurer for battery | |
| CN103837811B (en) | Transistor curve tracer high-resolution test device | |
| CN208833330U (en) | A kind of acousto-optic floodometer | |
| CN206096265U (en) | Portable silicon materials resistivity test device | |
| CN204495909U (en) | Wide-range high-accuracy electrical resistance collection circuit | |
| CN101852827B (en) | Silicon material resistivity voice test pen | |
| CN205880184U (en) | Calibration equipment is synthesized to portable arrester discharge counter | |
| CN105137252B (en) | Measuring device measures accessory and measurement method | |
| CN217716446U (en) | Instrument for industrial detection with higher detection accuracy | |
| CN204989358U (en) | Instrument cable testing arrangement in pit | |
| CN206074691U (en) | The test device of becket DC impedance in fingerprint recognition module | |
| CN205787833U (en) | A kind of device for data detection | |
| CN220252032U (en) | Railway signal interlocking circuit fault detection pen | |
| CN108445277A (en) | A kind of multimeter wrong way alarm device | |
| CN201859173U (en) | Multipurpose tester pen tool | |
| CN208580146U (en) | One kind taking ferroelectric core detection device | |
| CN109297562B (en) | Acousto-optic water level measuring instrument and measuring method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |